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The SPARC Toroidal Field Model Coil Program
Authors:
Zachary Hartwig,
Rui Vieira,
Darby Dunn,
Theodore Golfinopoulos,
Brian LaBombard,
Christopher Lammi,
Phil Michael,
Susan Agabian,
David Arsenault,
Raheem Barnett,
Mike Barry,
Larry Bartoszek,
William Beck,
David Bellofatto,
Daniel Brunner,
William Burke,
Jason Burrows,
William Byford,
Charles Cauley,
Sarah Chamberlain,
David Chavarria,
JL Cheng,
James Chicarello,
Karen Cote,
Corinne Cotta
, et al. (75 additional authors not shown)
Abstract:
The SPARC Toroidal Field Model Coil (TFMC) Program was a three-year effort between 2018 and 2021 that developed novel Rare Earth Yttrium Barium Copper Oxide (REBCO) superconductor technologies and then successfully utilized these technologies to design, build, and test a first-in-class, high-field (~20 T), representative-scale (~3 m) superconducting toroidal field coil. With the principal objectiv…
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The SPARC Toroidal Field Model Coil (TFMC) Program was a three-year effort between 2018 and 2021 that developed novel Rare Earth Yttrium Barium Copper Oxide (REBCO) superconductor technologies and then successfully utilized these technologies to design, build, and test a first-in-class, high-field (~20 T), representative-scale (~3 m) superconducting toroidal field coil. With the principal objective of demonstrating mature, large-scale, REBCO magnets, the project was executed jointly by the MIT Plasma Science and Fusion Center (PSFC) and Commonwealth Fusion Systems (CFS). The TFMC achieved its programmatic goal of experimentally demonstrating a large-scale high-field REBCO magnet, achieving 20.1 T peak field-on-conductor with 40.5 kA of terminal current, 815 kN/m of Lorentz loading on the REBCO stacks, and almost 1 GPa of mechanical stress accommodated by the structural case. Fifteen internal demountable pancake-to-pancake joints operated in the 0.5 to 2.0 nOhm range at 20 K and in magnetic fields up to 12 T. The DC and AC electromagnetic performance of the magnet, predicted by new advances in high-fidelity computational models, was confirmed in two test campaigns while the massively parallel, single-pass, pressure-vessel style coolant scheme capable of large heat removal was validated. The REBCO current lead and feeder system was experimentally qualified up to 50 kA, and the crycooler based cryogenic system provided 600 W of cooling power at 20 K with mass flow rates up to 70 g/s at a maximum design pressure of 20 bar-a for the test campaigns. Finally, the feasibility of using passive, self-protection against a quench in a fusion-scale NI TF coil was experimentally assessed with an intentional open-circuit quench at 31.5 kA terminal current.
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Submitted 18 August, 2023;
originally announced August 2023.
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Donors and Deep Acceptors in $β$-Ga2O3
Authors:
Adam T. Neal,
Shin Mou,
Subrina Rafique,
Hongping Zhao,
Elaheh Ahmadi,
James S. Speck,
Kevin T. Stevens,
John D. Blevins,
Darren B. Thomson,
Neil Moser,
Kelson D. Chabak,
Gregg H. Jessen
Abstract:
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $β$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed (EFG), Czochralski (CZ), molecular beam epitaxy (MBE), and low pressure chemical vapor deposition (LPCVD). Through simultaneous, self-consistent fitting of the…
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We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $β$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed (EFG), Czochralski (CZ), molecular beam epitaxy (MBE), and low pressure chemical vapor deposition (LPCVD). Through simultaneous, self-consistent fitting of the temperature dependent carrier density and mobility, we are able to accurately estimate the donor energy of Si and Ge to be 30 meV in $β$-Ga2O3. Additionally, we show that our measured Hall effect data are consistent with Si and Ge acting as typical shallow donors, rather than shallow DX centers. High temperature Hall effect measurement of Fe doped $β$-Ga2O3 indicates that the material remains weakly n-type even with the Fe doping, with an acceptor energy of 860 meV relative to the conduction band for the Fe deep acceptor. Van der Pauw measurements of Mg doped Ga2O3 indicate an activation energy of 1.1 eV, as determined from the temperature dependent conductivity.
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Submitted 4 September, 2018;
originally announced September 2018.
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Ball-grid array architecture for microfabricated ion traps
Authors:
Nicholas D. Guise,
Spencer D. Fallek,
Kelly E. Stevens,
K. R. Brown,
Curtis Volin,
Alexa W. Harter,
Jason M. Amini,
Robert E. Higashi,
Son Thai Lu,
Helen M. Chanhvongsak,
Thi A. Nguyen,
Matthew S. Marcus,
Thomas R. Ohnstein,
Daniel W. Youngner
Abstract:
State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals f…
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State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with $^{40}$Ca$^+$ ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with $^{171}$Yb$^+$ ions in a second BGA trap.
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Submitted 5 May, 2015; v1 submitted 17 December, 2014;
originally announced December 2014.
