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A Terahertz Bandwidth Nonmagnetic Isolator
Authors:
Haotian Cheng,
Yishu Zhou,
Freek Ruesink,
Margaret Pavlovich,
Shai Gertler,
Andrew L. Starbuck,
Andrew J. Leenheer,
Andrew T. Pomerene,
Douglas C. Trotter,
Christina Dallo,
Matthew Boady,
Katherine M. Musick,
Michael Gehl,
Ashok Kodigala,
Matt Eichenfield,
Anthony L. Lentine,
Nils T. Otterstrom,
Peter T. Rakich
Abstract:
Integrated photonics could bring transformative breakthroughs in computing, networking, imaging, sensing, and quantum information processing, enabled by increasingly sophisticated optical functionalities on a photonic chip. However, wideband optical isolators, which are essential for the robust operation of practically all optical systems, have been challenging to realize in integrated form due to…
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Integrated photonics could bring transformative breakthroughs in computing, networking, imaging, sensing, and quantum information processing, enabled by increasingly sophisticated optical functionalities on a photonic chip. However, wideband optical isolators, which are essential for the robust operation of practically all optical systems, have been challenging to realize in integrated form due to the incompatibility of magnetic media with these circuit technologies. Here, we present the first-ever demonstration of an integrated non-magnetic optical isolator with terahertz-level optical bandwidth. The system is comprised of two acousto-optic frequency-shifting beam splitters which create a non-reciprocal multimode interferometer exhibiting high-contrast, nonreciprocal light transmission. We dramatically enhance the isolation bandwidth of this system by precisely dispersion balancing the paths of the interferometer. Using this approach, we demonstrate integrated nonmagnetic isolators with an optical contrast as high as 28 dB, insertion losses as low as -2.16 dB, and optical bandwidths as high as 2 THz (16 nm). We also show that the center frequency and direction of optical isolation are rapidly reconfigurable by tuning the relative phase of the microwave signals used to drive the acousto-optic beam splitters. With their CMOS compatibility, wideband operation, low losses, and rapid reconfigurability, such integrated isolators could address a key barrier to the integration of a wide range of photonic functionalities on a chip. Looking beyond the current demonstration, this bandwidth-scalable approach to nonmagnetic isolation opens the door to ultrawideband (>10 THz) isolators, which are needed to shrink state-of-the-art imaging, sensing, and communications systems into photonic integrated circuits.
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Submitted 15 March, 2024;
originally announced March 2024.
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Electrically interfaced Brillouin-active waveguide for multi-domain transduction
Authors:
Yishu Zhou,
Freek Ruesink,
Margaret Pavlovich,
Ryan Behunin,
Haotian Cheng,
Shai Gertler,
Andrew L. Starbuck,
Andrew J. Leenheer,
Andrew T. Pomerene,
Douglas C. Trotter,
Katherine M. Musick,
Michael Gehl,
Ashok Kodigala,
Matt Eichenfield,
Anthony L. Lentine,
Nils Otterstrom,
Peter Rakich
Abstract:
New strategies to convert signals between optical and microwave domains could play a pivotal role in advancing both classical and quantum technologies. Through recent studies, electro-optomechanical systems have been used to implement microwave-to-optical conversion using resonant optical systems, resulting in transduction over limited optical bandwidth. Here, we present an optomechanical waveguid…
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New strategies to convert signals between optical and microwave domains could play a pivotal role in advancing both classical and quantum technologies. Through recent studies, electro-optomechanical systems have been used to implement microwave-to-optical conversion using resonant optical systems, resulting in transduction over limited optical bandwidth. Here, we present an optomechanical waveguide system with an integrated piezoelectric transducer that produces electro-optomechanical transduction over a wide optical bandwidth through coupling to a continuum of optical modes. Efficient electromechanical and optomechanical coupling within this system enables bidirectional optical-to-microwave conversion with a quantum efficiency of up to $-$54.16 dB. When electrically driven, this system produces a low voltage acousto-optic phase modulation over a wide ($>$100 nm) wavelength range. Through optical-to-microwave conversion, we show that the amplitude-preserving nature inherent to forward Brillouin scattering is intriguing and has the potential to enable new schemes for microwave photonic signal processing. We use these properties to demonstrate a multi-channel microwave photonic filter by transmitting an optical signal through a series of electro-optomechanical waveguide segments having distinct resonance frequencies. Building on these demonstrations, such electro-optomechanical systems could bring flexible strategies for modulation, channelization, and spectrum analysis in microwave photonics.
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Submitted 15 July, 2023;
originally announced July 2023.
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Intermodal strong coupling and wideband, low-loss isolation in silicon
Authors:
Yishu Zhou,
Freek Ruesink,
Shai Gertler,
Haotian Cheng,
Margaret Pavlovich,
Eric Kittlaus,
Andrew L. Starbuck,
Andrew J. Leenheer,
Andrew T. Pomerene,
Douglas C. Trotter,
Christina Dallo,
Katherine M. Musick,
Eduardo Garcia,
Robert Reyna,
Andrew L. Holterhoff,
Michael Gehl,
Ashok Kodigala,
Matt Eichenfield,
Nils T. Otterstrom,
Anthony L. Lentine,
Peter Rakich
Abstract:
Strong coupling enables a diverse set of applications that include optical memories, non-magnetic isolators, photonic state manipulation, and signal processing. To date, strong coupling in integrated platforms has been realized using narrow-linewidth high-Q optical resonators. In contrast, here we demonstrate wideband strong coupling between two photonic bands. The indirect interband photonic tran…
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Strong coupling enables a diverse set of applications that include optical memories, non-magnetic isolators, photonic state manipulation, and signal processing. To date, strong coupling in integrated platforms has been realized using narrow-linewidth high-Q optical resonators. In contrast, here we demonstrate wideband strong coupling between two photonic bands. The indirect interband photonic transition is controlled by electrically driving phonons in a linear silicon waveguide. Under large acoustic drive, the system features a Rabi-like energy exchange between two waveguide modes, demonstrating strong coupling. When tuned to unity energy conversion, our system unlocks a set of powerful applications, including optical modulators, routers and filters. In particular, we demonstrate a low loss (-2.08 dB) acousto-optic modulator (AOM) with pump suppression ratio > 55 dB. We also reconfigure our system to demonstrate a non-magnetic, low-loss (< 1 dB) and broadband (59 GHz 10 dB isolation bandwidth) optical isolator.
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Submitted 10 November, 2022;
originally announced November 2022.
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110 GHz, 110 mW Hybrid Silicon-Lithium Niobate Mach-Zehnder Modulator
Authors:
Forrest Valdez,
Viphretuo Mere,
Xiaoxi Wang,
Nicholas Boynton,
Thomas A. Friedmann,
Shawn Arterburn,
Christina Dallo,
Andrew T. Pomerene,
Andrew L. Starbuck,
Douglas C. Trotter,
Anthony L. Lentine,
Shayan Mookherjea
Abstract:
High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. T…
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High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $V_πL$ product of 3.1 V$.$cm and an on-chip optical insertion loss of 1.8 dB.
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Submitted 26 October, 2022;
originally announced October 2022.
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High-Performance Silicon Photonic Single-Sideband Modulators for Cold Atom Interferometry
Authors:
Ashok Kodigala,
Michael Gehl,
Gregory W. Hoth,
Jongmin Lee,
Christopher DeRose,
Andrew Pomerene,
Christina Dallo,
Douglas Trotter,
Andrew L. Starbuck,
Grant Biedermann,
Peter D. D. Schwindt,
Anthony L. Lentine
Abstract:
The most complicated and challenging system within a light-pulse atom interferometer (LPAI) is the laser system, which controls the frequencies and intensities of multiple laser beams over time to configure quantum gravity and inertial sensors. The main function of an LPAI laser system is to perform cold-atom generation, state-preparation, state-selective detection and to generate coherent two-pho…
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The most complicated and challenging system within a light-pulse atom interferometer (LPAI) is the laser system, which controls the frequencies and intensities of multiple laser beams over time to configure quantum gravity and inertial sensors. The main function of an LPAI laser system is to perform cold-atom generation, state-preparation, state-selective detection and to generate coherent two-photon process for the light-pulse sequence. Substantial miniaturization and ruggedization of the laser system can be achieved by bringing most key functions of the laser system onto photonic integrated circuit (PIC). We demonstrate a high-performance silicon photonic suppressed-carrier single-sideband (SC-SSB) modulator at 1560 nm, which can dynamically frequency shift within the LPAI. With independent RF-channel control, we study the imbalances in both the optical and RF phases/amplitudes to reach 30 dB carrier-suppression, unprecedented 47.8 dB sideband-suppression at peak conversion-efficiency: -6.846 dB (20.7 %). Using a silicon photonic SSB-modulator, we demonstrate cold-atom generation, state-selective detection, and atom interferometer fringes to estimate gravitational acceleration, $g \approx 9.77 \pm 0.01 \,\rm{m/s^2}$, in a Rubidium ($^{87}$Rb) atom system.
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Submitted 12 July, 2024; v1 submitted 26 April, 2022;
originally announced April 2022.
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Back-scatter immune injection-locked Brillouin laser in silicon
Authors:
Nils T. Otterstrom,
Shai Gertler,
Yishu Zhou,
Eric A. Kittlaus,
Ryan O. Behunin,
Michael Gehl,
Andrew L. Starbuck,
Christina M. Dallo,
Andrew T. Pomerene,
Douglas C. Trotter,
Anthony L. Lentine,
Peter T. Rakich
Abstract:
As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser's frequency and phase can be controlled by an injected signal. Due to its inherent simplicity and favorable noise characteristics, injection locking has become a workhors…
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As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser's frequency and phase can be controlled by an injected signal. Due to its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection locking dynamics remain relatively untapped--despite significant potential for technological and scientific impact. Here, we demonstrate injection locking in a silicon photonic Brillouin laser for the first time. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and back-scatter immunity in an all-silicon system. This device physics opens the door to new strategies for phase noise reduction, low-noise amplification, and back-scatter immunity in silicon photonics.
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Submitted 14 January, 2020;
originally announced January 2020.
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Hybrid Silicon Photonic-Lithium Niobate Electro-Optic Mach-Zehnder Modulator Beyond 100 GHz Bandwidth
Authors:
Peter O. Weigel,
Jie Zhao,
Kelvin Fang,
Hasan Al-Rubaye,
Douglas Trotter,
Dana Hood,
John Mudrick,
Christina Dallo,
Andrew T. Pomerene,
Andrew L. Starbuck,
Christopher T. DeRose,
Anthony L. Lentine,
Gabriel Rebeiz,
Shayan Mookherjea
Abstract:
Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping, data communications, ultrafast measurements, sampling, timing and ranging, and RF photonics. Although silicon (Si) photonic electro-optic modulators (EOMs) can be…
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Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping, data communications, ultrafast measurements, sampling, timing and ranging, and RF photonics. Although silicon (Si) photonic electro-optic modulators (EOMs) can be fabricated using wafer-scale technology compatible with the semiconductor industry, such devices do not exceed an electrical 3-dB bandwidth of about 50 GHz, whereas many applications require higher RF frequencies. Bulk Lithium Niobate (LN) and etched LN modulators can scale to higher bandwidths, but are not integrated with the Si photonics fabrication process adopted widely over the last decade. As an alternative, an ultra-high-bandwidth Mach-Zehnder EOM based on Si photonics is shown, made using conventional lithography and wafer-scale fabrication, bonded to an unpatterned LN thin film. This hybrid LN-Si MZM achieves beyond 100 GHz 3-dB electrical bandwidth. Our design integrates silicon photonics light input/output and optical components, including directional couplers, low-radius bends, and path-length difference segments, realized in a foundry Si photonics process. The use of a simple low-temperature (200C) back-end integration process to bond a postage-stamp-sized piece of LN where desired, and achieving light routing into and out of LN to harness its electro-optic property without any etching or patterning of the LN film, may be broadly-useful strategies for advanced integrated opto-electronic microchips.
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Submitted 23 May, 2018; v1 submitted 27 March, 2018;
originally announced March 2018.
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Hybrid Lithium Niobate and Silicon Photonic Waveguides
Authors:
Peter O. Weigel,
Marc Savanier,
Christopher DeRose,
Andrew T. Pomerene,
Andrew L. Starbuck,
Anthony L. Lentine,
Vincent Stenger,
Shayan Mookherjea
Abstract:
We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with ad…
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We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with adiabatic tapers that preserve the symmetry of the fundamental quasi TE mode and prevent mode rotation. We find the average propagation loss in cross section B to be 4.3 dB/cm with a standard deviation of 2.1 dB/cm, comparable with a 3 um SiO2 clad (in place of LN) Si waveguide whose average propagation loss was 3.1 dB/cm with a standard deviation of 2.1 dB/cm.
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Submitted 6 October, 2015;
originally announced October 2015.
