Showing 1–9 of 9 results for author: Speck, J S

Nanoscale imaging of reduced forward bias at V-pits in green-emitting nitride LEDs

Authors: C. Fornos, N. ALyabyeva, Y. W. Ho, J. Peretti, A. C. H. Rowe, J. S. Speck, T. Tak, C. Weisbuch

Abstract: Record wall-plug efficiencies in long-wavelength, nitride light-emitting diodes (LEDs) have recently been achieved in devices containing high V-pit densities. Numerical modeling suggests this may be due to improved electrical efficiencies (EE). In order to test this proposition, a novel scanning tunneling luminescence microscope (STLM) is used to map the local optoelectronic properties of commerci… ▽ More Record wall-plug efficiencies in long-wavelength, nitride light-emitting diodes (LEDs) have recently been achieved in devices containing high V-pit densities. Numerical modeling suggests this may be due to improved electrical efficiencies (EE). In order to test this proposition, a novel scanning tunneling luminescence microscope (STLM) is used to map the local optoelectronic properties of commercial, green-emitting LED heterostructures around V-pits with nanoscale spatial resolution. Using the STLM tip as the hole injector, injection at the lips of V-pits is found to be drastically different from injection on the heterostructure's c-plane. A $\approx$ 3-fold improvement in internal quantum efficiency near V-pits is observed at low injection, and at higher injection a $\approx$ 1.2 V reduction in the forward bias unambiguously confirms the EE hypothesis for hole injection. △ Less

Submitted 29 June, 2025; v1 submitted 22 June, 2025; originally announced June 2025.

Comments: 6 pages, 6 figures

The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs

Authors: Huai-Chin Huang, Shih-Min Chen, Claude Weisbuch, James S. Speck, Yuh-Renn Wu

Abstract: Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum ba… ▽ More Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (\(V < \hbarω/e = 2.0 \, \text{V}\)) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies. △ Less

Submitted 31 January, 2025; originally announced January 2025.

Comments: 8 pages, 8 figures

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN

Authors: G. Koblmüller, S. Fernández-Garrido, E. Calleja, J. S. Speck

Abstract: Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer… ▽ More Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer to step-flow growth transition under Ga-rich growth was surfactant mediated and related to a Ga adlayer coverage of one monolayer. Under N-rich conditions the transition from 3D to layer-by-layer growth was predominantly thermally activated, facilitating two-dimensional growth at temperatures of thermal decomposition. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Journal ref: Appl. Phys. Lett. 91, 161904 (2007)

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shape defects and Random Alloy Fluctuation in Quantum Wells

Authors: Cheng-Han Ho, James S. Speck, Claude Weisbuch, Yuh-Renn Wu

Abstract: For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage $V_\text{for}$ is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in QWs has proven to be an important f… ▽ More For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage $V_\text{for}$ is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in QWs has proven to be an important factor reducing $V_\text{for}$. However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-defects have been proposed as another key factor in reducing $V_\text{for}$ to allow laterally injection into multiple quantum wells (MQWs), thus bypassing the multiple energy barriers incurred by vertical transport. In this paper, to model carrier transport in the whole LED, we consider both random-alloy and V-defect effects. A fully two-dimensional drift-diffusion charge-control solver is used to model both effects. The results indicate that the turn-on voltages for blue and green LEDs are both affected by random alloy fluctuations and V-defect density. For green LEDs, $V_\text{for}$ decreases more due to V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection. Finally, we discuss how V-defect density and size affects the results. △ Less

Submitted 10 February, 2022; v1 submitted 17 September, 2021; originally announced September 2021.

Comments: This paper is published in Phys. Rev. Applied 17, 014033, 2022

Journal ref: Phys. Rev. Applied, 17, 014033, 2022

Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells

Authors: Huan-Ting Shen, Claude Weisbuch, James S. Speck, Yuh-Renn Wu

Abstract: For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and current spreading. The diffusion length mainly impacts the overall LED efficiency through sidewall nonradiative recombination, especially for $μ$LEDs. In this paper, we study the carrier lateral diffusion length for nitride-b… ▽ More For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and current spreading. The diffusion length mainly impacts the overall LED efficiency through sidewall nonradiative recombination, especially for $μ$LEDs. In this paper, we study the carrier lateral diffusion length for nitride-based green, blue, and ultraviolet C (UVC) QWs in three dimensions. We solve the Poisson and drift-diffusion equations in the framework of localization landscape theory. The full three-dimensional model includes the effects of random alloy composition fluctuations and electric fields in the QWs. The dependence of the minority carrier diffusion length on the majority carrier density is studied with a full three-dimensional model. The results show that the diffusion length is limited by the potential fluctuations and the recombination rate, the latter being controlled by the polarization-induced electric field in the QWs and by the screening of the internal electric fields by carriers. △ Less

Submitted 28 August, 2021; v1 submitted 20 May, 2021; originally announced May 2021.

Comments: This paper has been accepted and published in Phys. Rev. Applied 16, 024054, 2021

Journal ref: Phys. Rev. Applied 16, 024054 (2021)

Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics

Authors: Guillaume Lheureux, Morteza Monavarian, Ryan Anderson, Ryan A. DeCrescent, Joel Bellessa, Clementine Symonds, Jon A. Schuller, Shuji Nakamura, James S. Speck, Steven P. DenBaars

Abstract: We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with an optimized thickness (~ 55 nm from simulation) was deposited on nanoporous GaN DBRs fabricated using electrochemical etching on freestanding semipolar GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and wit… ▽ More We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with an optimized thickness (~ 55 nm from simulation) was deposited on nanoporous GaN DBRs fabricated using electrochemical etching on freestanding semipolar GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and with that of a blanket Ag layer deposited on GaN. The results indicate presence of a TP mode at ~ 455 nm on the structure after the Ag deposition. An active medium can also be accommodated within the mode for optoelectronics and photonics. Moreover, the simulation results predict a sensitivity of the TP mode wavelength to the ambient (~ 4 nm shift when changing the ambient within the pores from air with n = 1 to isopropanol n = 1.3) , suggesting an application of the nanoporous GaN based TP structure for optical sensing. △ Less

Submitted 5 January, 2020; originally announced January 2020.

Comments: 8 pages, 4 figures

All-solid-state VUV frequency comb at 160 nm using multi-harmonic generation in a non-linear femtosecond enhancement cavity

Authors: J. Seres, E. Seres, C. Serrat, Erin C. Young, James S. Speck, T. Schumm

Abstract: We report on the realization of a solid-state-based vacuum ultraviolet frequency comb, using multi-harmonic generation in an external enhancement cavity. Optical conversions in such arrangements were so-far reported only using gaseous media. We present a theory that allows selecting the most suited solid generation medium for specific target harmonics by adapting the bandgap of the material. Conse… ▽ More We report on the realization of a solid-state-based vacuum ultraviolet frequency comb, using multi-harmonic generation in an external enhancement cavity. Optical conversions in such arrangements were so-far reported only using gaseous media. We present a theory that allows selecting the most suited solid generation medium for specific target harmonics by adapting the bandgap of the material. Consequently, we experimentally use a thin AlN film grown on a sapphire substrate to realize a compact frequency comb multi-harmonic source in the DUV/VUV spectral range. Extending our earlier VUV source [Opt. Exp. 26, 21900 (2018)] with the enhancement cavity, a sub-Watt level Ti:sapphire femtosecond frequency comb is enhanced to 24 W stored average power, its 3rd, 5th and 7th harmonics are generated, and the target harmonic power at 160 nm increased by two orders of magnitude. The emerging non-linear effects in the solid medium together with suitable intra-cavity dispersion management support optimal enhancement and stable locking. To demonstrate the spectroscopic ability of the realized frequency comb, we report on the beat measurement between the 3rd harmonic beam and a 266 nm CW laser reaching about 1 MHz accuracy. △ Less

Submitted 14 December, 2018; originally announced December 2018.

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

Authors: Burhan K. SaifAddin, Abdullah Almogbel, Christian J. Zollner, Humberto Foronda, Ahmed Alyamani, Abdulrahman Albadri, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Abstract: The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into thin-film flip-chip LEDs (TFFC LEDs) with high LEE. This process transfers the AlGaN LED epi onto a new substrate by wafer-to-wafer bonding, and… ▽ More The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into thin-film flip-chip LEDs (TFFC LEDs) with high LEE. This process transfers the AlGaN LED epi onto a new substrate by wafer-to-wafer bonding, and by removing the absorbing SiC substrate with a highly selective SF6 plasma etch that stops at the AlN buffer layer. We optimized the inductively coupled plasma (ICP) SF6 etch parameters to develop a substrate-removal process with high reliability and precise epitaxial control, without creating micromasking defects or degrading the health of the plasma etching system. The SiC etch rate by SF6 plasma was ~46 μm/hr at a high RF bias (400 W), and ~7 μm/hr at a low RF bias (49 W) with very high etch selectivity between SiC and AlN. The high SF6 etch selectivity between SiC and AlN was essential for removing the SiC substrate and exposing a pristine, smooth AlN surface. We demonstrated the epi-transfer process by fabricating high light extraction TFFC LEDs from AlGaN LEDs grown on SiC. To further enhance the light extraction, the exposed N-face AlN was anisotropically etched in dilute KOH. The LEE of the AlGaN LED improved by ~3X after KOH roughening at room temperature. This AlGaN TFFC LED process establishes a viable path to high external quantum efficiency (EQE) and power conversion efficiency (PCE) UV-C LEDs. △ Less

Submitted 3 December, 2018; originally announced December 2018.

Comments: 22 pages, 6 figures. (accepted in Semiconductor Science and Technology, SST-105156.R1 2018)

Donors and Deep Acceptors in $β$-Ga2O3

Authors: Adam T. Neal, Shin Mou, Subrina Rafique, Hongping Zhao, Elaheh Ahmadi, James S. Speck, Kevin T. Stevens, John D. Blevins, Darren B. Thomson, Neil Moser, Kelson D. Chabak, Gregg H. Jessen

Abstract: We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $β$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed (EFG), Czochralski (CZ), molecular beam epitaxy (MBE), and low pressure chemical vapor deposition (LPCVD). Through simultaneous, self-consistent fitting of the… ▽ More We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $β$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed (EFG), Czochralski (CZ), molecular beam epitaxy (MBE), and low pressure chemical vapor deposition (LPCVD). Through simultaneous, self-consistent fitting of the temperature dependent carrier density and mobility, we are able to accurately estimate the donor energy of Si and Ge to be 30 meV in $β$-Ga2O3. Additionally, we show that our measured Hall effect data are consistent with Si and Ge acting as typical shallow donors, rather than shallow DX centers. High temperature Hall effect measurement of Fe doped $β$-Ga2O3 indicates that the material remains weakly n-type even with the Fe doping, with an acceptor energy of 860 meV relative to the conduction band for the Fe deep acceptor. Van der Pauw measurements of Mg doped Ga2O3 indicate an activation energy of 1.1 eV, as determined from the temperature dependent conductivity. △ Less

Submitted 4 September, 2018; originally announced September 2018.

Comments: 19 pages, 6 figures

Journal ref: Appl. Phys. Lett. 113, 062101 (2018)