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Timing performance of a digital SiPM prototype measured with a picosecond injection laser
Authors:
Daniil Rastorguev,
Inge Diehl,
Karsten Hansen,
Finn King,
Stephan Lachnit,
Simon Spannagel,
Tomas Vanat,
Gianpiero Vignola
Abstract:
The DESY digital silicon photomultiplier (dSiPM) is a monolithic detector based on complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diodes (SPADs) and features a fully digital readout. The dSiPM prototype was characterized using a picosecond injection laser. Different contributions to the time resolution from both SPADs and digitization electronics are quantified. The dSiPM a…
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The DESY digital silicon photomultiplier (dSiPM) is a monolithic detector based on complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diodes (SPADs) and features a fully digital readout. The dSiPM prototype was characterized using a picosecond injection laser. Different contributions to the time resolution from both SPADs and digitization electronics are quantified. The dSiPM achieves a temporal resolution of approximately 50 ps under optimal conditions, while localized charge deposition with the laser revealed in-pixel variations of the time resolution linked to the SPAD layout. Combining fast timing with a pixelated readout, the device is a promising candidate for 4D-tracking detectors and other precision timing applications.
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Submitted 5 May, 2025;
originally announced May 2025.
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The Muon Collider
Authors:
Carlotta Accettura,
Simon Adrian,
Rohit Agarwal,
Claudia Ahdida,
Chiara Aime',
Avni Aksoy,
Gian Luigi Alberghi,
Siobhan Alden,
Luca Alfonso,
Muhammad Ali,
Anna Rita Altamura,
Nicola Amapane,
Kathleen Amm,
David Amorim,
Paolo Andreetto,
Fabio Anulli,
Ludovica Aperio Bella,
Rob Appleby,
Artur Apresyan,
Pouya Asadi,
Mohammed Attia Mahmoud,
Bernhard Auchmann,
John Back,
Anthony Badea,
Kyu Jung Bae
, et al. (433 additional authors not shown)
Abstract:
Muons offer a unique opportunity to build a compact high-energy electroweak collider at the 10 TeV scale. A Muon Collider enables direct access to the underlying simplicity of the Standard Model and unparalleled reach beyond it. It will be a paradigm-shifting tool for particle physics representing the first collider to combine the high-energy reach of a proton collider and the high precision of an…
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Muons offer a unique opportunity to build a compact high-energy electroweak collider at the 10 TeV scale. A Muon Collider enables direct access to the underlying simplicity of the Standard Model and unparalleled reach beyond it. It will be a paradigm-shifting tool for particle physics representing the first collider to combine the high-energy reach of a proton collider and the high precision of an electron-positron collider, yielding a physics potential significantly greater than the sum of its individual parts. A high-energy muon collider is the natural next step in the exploration of fundamental physics after the HL-LHC and a natural complement to a future low-energy Higgs factory. Such a facility would significantly broaden the scope of particle colliders, engaging the many frontiers of the high energy community.
The last European Strategy for Particle Physics Update and later the Particle Physics Project Prioritisation Panel in the US requested a study of the muon collider, which is being carried on by the International Muon Collider Collaboration. In this comprehensive document we present the physics case, the state of the work on accelerator design and technology, and propose an R\&D project that can make the muon collider a reality.
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Submitted 30 April, 2025;
originally announced April 2025.
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The Linear Collider Facility (LCF) at CERN
Authors:
H. Abramowicz,
E. Adli,
F. Alharthi,
M. Almanza-Soto,
M. M. Altakach,
S. Ampudia Castelazo,
D. Angal-Kalinin,
J. A. Anguiano,
R. B. Appleby,
O. Apsimon,
A. Arbey,
O. Arquero,
D. Attié,
J. L. Avila-Jimenez,
H. Baer,
Y. Bai,
C. Balazs,
P. Bambade,
T. Barklow,
J. Baudot,
P. Bechtle,
T. Behnke,
A. B. Bellerive,
S. Belomestnykh,
Y. Benhammou
, et al. (386 additional authors not shown)
Abstract:
In this paper we outline a proposal for a Linear Collider Facility as the next flagship project for CERN. It offers the opportunity for a timely, cost-effective and staged construction of a new collider that will be able to comprehensively map the Higgs boson's properties, including the Higgs field potential, thanks to a large span in centre-of-mass energies and polarised beams. A comprehensive pr…
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In this paper we outline a proposal for a Linear Collider Facility as the next flagship project for CERN. It offers the opportunity for a timely, cost-effective and staged construction of a new collider that will be able to comprehensively map the Higgs boson's properties, including the Higgs field potential, thanks to a large span in centre-of-mass energies and polarised beams. A comprehensive programme to study the Higgs boson and its closest relatives with high precision requires data at centre-of-mass energies from the Z pole to at least 1 TeV. It should include measurements of the Higgs boson in both major production mechanisms, ee -> ZH and ee -> vvH, precision measurements of gauge boson interactions as well as of the W boson, Higgs boson and top-quark masses, measurement of the top-quark Yukawa coupling through ee ->ttH, measurement of the Higgs boson self-coupling through HH production, and precision measurements of the electroweak couplings of the top quark. In addition, ee collisions offer discovery potential for new particles complementary to HL-LHC.
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Submitted 19 June, 2025; v1 submitted 31 March, 2025;
originally announced March 2025.
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Impact of the circuit layout on the charge collection in a monolithic pixel sensor
Authors:
Corentin Lemoine,
Rafael Ballabriga,
Eric Buschmann,
Michael Campbell,
Raimon Casanova Mohr,
Dominik Dannheim,
Jona Dilg,
Ana Dorda,
Finn King,
Ono Feyens,
Philipp Gadow,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Iraklis Kremastiotis,
Stefano Maffessanti,
Larissa Mendes,
Younes Otarid,
Christian Reckleben,
Sébastien Rettie,
Manuel Alejandro del Rio Viera,
Sara Ruiz Daza,
Judith Schlaadt,
Adriana Simancas
, et al. (6 additional authors not shown)
Abstract:
CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a n…
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CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a new test-chip produced in the same process but with a larger pixel pitch than previous prototypes, exhibits an unexpected asymmetric efficiency pattern.
This contribution describes a simulation procedure combining TCAD, Monte Carlo and circuit simulations to model and understand this effect. It proved able to reproduce measurement results and attribute the asymmetric efficiency drop to a slow charge collection due to low amplitude potential wells created by the circuitry layout and impacting efficiency via ballistic deficit.
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Submitted 27 March, 2025;
originally announced March 2025.
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A Linear Collider Vision for the Future of Particle Physics
Authors:
H. Abramowicz,
E. Adli,
F. Alharthi,
M. Almanza-Soto,
M. M. Altakach,
S Ampudia Castelazo,
D. Angal-Kalinin,
R. B. Appleby,
O. Apsimon,
A. Arbey,
O. Arquero,
A. Aryshev,
S. Asai,
D. Attié,
J. L. Avila-Jimenez,
H. Baer,
J. A. Bagger,
Y. Bai,
I. R. Bailey,
C. Balazs,
T Barklow,
J. Baudot,
P. Bechtle,
T. Behnke,
A. B. Bellerive
, et al. (391 additional authors not shown)
Abstract:
In this paper we review the physics opportunities at linear $e^+e^-$ colliders with a special focus on high centre-of-mass energies and beam polarisation, take a fresh look at the various accelerator technologies available or under development and, for the first time, discuss how a facility first equipped with a technology mature today could be upgraded with technologies of tomorrow to reach much…
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In this paper we review the physics opportunities at linear $e^+e^-$ colliders with a special focus on high centre-of-mass energies and beam polarisation, take a fresh look at the various accelerator technologies available or under development and, for the first time, discuss how a facility first equipped with a technology mature today could be upgraded with technologies of tomorrow to reach much higher energies and/or luminosities. In addition, we will discuss detectors and alternative collider modes, as well as opportunities for beyond-collider experiments and R\&D facilities as part of a linear collider facility (LCF). The material of this paper will support all plans for $e^+e^-$ linear colliders and additional opportunities they offer, independently of technology choice or proposed site, as well as R\&D for advanced accelerator technologies. This joint perspective on the physics goals, early technologies and upgrade strategies has been developed by the LCVision team based on an initial discussion at LCWS2024 in Tokyo and a follow-up at the LCVision Community Event at CERN in January 2025. It heavily builds on decades of achievements of the global linear collider community, in particular in the context of CLIC and ILC.
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Submitted 31 March, 2025; v1 submitted 25 March, 2025;
originally announced March 2025.
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Transient studies using a TCAD and Allpix Squared combination approach
Authors:
Manuel A. Del Rio Viera,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Judith Schlaadt,
Paul Schütze,
Adriana Simancas,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the s…
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The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the sensing element and thus the overall performance of the pixel detector. The response of the sensors can then be tested in laboratory and test beam facilities and compared to simulation results. Transient simulations allow for studying the response of the sensor as a function of time, such as the signal produced after a charged particle passes through the sensor. The study of these signals is important to understand the magnitude and timing of the response from the sensors and improve upon them. While TCAD simulations are accurate, the time required to produce a single pulse is large compared to a combination of MC and TCAD simulations. In this work, a validation of the transient simulation approach and studies on charge collection are presented.
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Submitted 10 February, 2025;
originally announced February 2025.
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The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
Authors:
Sara Ruiz Daza,
Rafael Ballabriga,
Eric Buschmann,
Michael Campbell,
Raimon Casanova Mohr,
Dominik Dannheim,
Jona Dilg,
Ana Dorda,
Finn King,
Ono Feyens,
Philipp Gadow,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Iraklis Kremastiotis,
Corentin Lemoine,
Stefano Maffessanti,
Larissa Mendes,
Younes Otarid,
Christian Reckleben,
Sébastien Rettie,
Manuel Alejandro del Rio Viera,
Judith Schlaadt,
Adriana Simancas
, et al. (6 additional authors not shown)
Abstract:
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflo…
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The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflow and ports a hybrid pixel-detector architecture, with digital pulse processing in each pixel, into a monolithic chip. The chip matrix consists of 64$\times$16 square pixels with a size of 35$\times$35 um2, and a total active area of approximately 1.25 um2. The chip has been successfully integrated into the Caribou DAQ system. It is fully functional, and the measured threshold dispersion and noise agree with the expectation from front-end simulations. However, a non-uniform in-pixel response related to the size and location of the n-wells in the analog circuitry has been observed in test beam measurements and will be discussed in this contribution. This asymmetry in the pixel response, enhanced by the 35 um pixel pitch - larger than in other prototypes - and certain features of the readout circuit, has not been observed in prototypes with smaller pixel pitches in this technology.
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Submitted 15 May, 2025; v1 submitted 10 February, 2025;
originally announced February 2025.
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Caribou -- A versatile data acquisition system for silicon pixel detector prototyping
Authors:
Younes Otarid,
Mathieu Benoit,
Eric Buschmann,
Hucheng Chen,
Dominik Dannheim,
Thomas Koffas,
Ryan St-Jean,
Simon Spannagel,
Shaochun Tang,
Tomas Vanat
Abstract:
Caribou is a versatile data acquisition system used in multiple collaborative frameworks (CERN EP R&D, DRD3, AIDAinnova, Tangerine) for laboratory and test-beam qualification of novel silicon pixel detector prototypes. The system is built around a common hardware, firmware and software stack shared accross different projects, thereby drastically reducing the development effort and cost. It consist…
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Caribou is a versatile data acquisition system used in multiple collaborative frameworks (CERN EP R&D, DRD3, AIDAinnova, Tangerine) for laboratory and test-beam qualification of novel silicon pixel detector prototypes. The system is built around a common hardware, firmware and software stack shared accross different projects, thereby drastically reducing the development effort and cost. It consists of a custom Control and Readout (CaR) board and a commercial Xilinx Zynq System-on-Chip (SoC) platform. The SoC platform runs a full Yocto distribution integrating the custom software framework (Peary) and a custom FPGA firmware built within a common firmware infrastructure (Boreal). The CaR board provides a hardware environment featuring various services such as powering, slow-control, and high-speed data links for the target detector prototype. Boreal and Peary, in turn, offer firmware and software architectures that enable seamless integration of control and readout for new devices. While the first version of the system used a SoC platform based on the ZC706 evaluation board, migration to a Zynq UltraScale+ architecture is progressing towards the support of the ZCU102 board and the ultimate objective of integrating the SoC functionality directly into the CaR board, eliminating the need for separate evaluation boards. This paper describes the Caribou system, focusing on the latest project developments and showcasing progress and future plans across its hardware, firmware, and software components.
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Submitted 6 February, 2025;
originally announced February 2025.
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Test Beam Characterization of a Digital Silicon Photomultiplier
Authors:
Finn King,
Inge Diehl,
Ono Feyens,
Ingrid-Maria Gregor,
Karsten Hansen,
Stephan Lachnit,
Frauke Poblotzki,
Daniil Rastorguev,
Simon Spannagel,
Tomas Vanat,
Gianpiero Vignola
Abstract:
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single photon avalanche diodes (SPADs) in commercial CMOS processes creates the opportunity to combine a matrix of SPADs and an application-specific integrated circuit…
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Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single photon avalanche diodes (SPADs) in commercial CMOS processes creates the opportunity to combine a matrix of SPADs and an application-specific integrated circuit in the same die. The potential of such digital SiPMs (dSiPMs) is still being explored, while it already is an established technology in certain applications, like light detection and ranging (LiDAR).
A prototype dSiPM, produced in the LFoundry 150-nm CMOS technology, was designed and tested at DESY. The dSiPM central part is a matrix of 32 by 32 pixels. Each pixel contains four SPADs, a digital front-end, and has an area of 69.6 $\times$ 76 um$^2$. The chip has four time-to-digital converters and includes further circuitry for data serialization and data links.
This work focuses on the characterization of the prototype in an electron beam at the DESY II Test Beam facility, to study its capability as a tracking and timing detector for minimum ionizing particles (MIPs). The MIP detection efficiency is found to be dominated by the fill factor and on the order of 31 %. The position of the impinging MIPs can be measured with a precision of about 20 um, and the time of the interaction can be measured with a precision better than 50 ps for about 85 % of the detected events. In addition, laboratory studies on the breakdown voltage, dark count rate, and crosstalk probability, as well as the experimental methods required for the characterization of such a sensor type in a particle beam are presented.
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Submitted 9 December, 2024;
originally announced December 2024.
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electronCT -- An Imaging Technique Using Very-high Energy Electrons
Authors:
Paul Schütze,
Aenne Abel,
Florian Burkart,
L. Malinda S. de Silva,
Hannes Dinter,
Kevin Dojan,
Adrian Herkert,
Sonja Jaster-Merz,
Max Joseph Kellermeier,
Willi Kuropka,
Frank Mayet,
Sara Ruiz Daza,
Simon Spannagel,
Thomas Vinatier,
Håkan Wennlöf
Abstract:
The electronCT technique is an imaging method based on the multiple Coulomb scattering of relativistic electrons and has potential applications in medical and industrial imaging. It utilizes a pencil beam of electrons in the very high energy electron (VHEE, 50-250 MeV) range and a single detection layer for the determination of the beam profile. The technique constitutes a projectional, two-dimens…
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The electronCT technique is an imaging method based on the multiple Coulomb scattering of relativistic electrons and has potential applications in medical and industrial imaging. It utilizes a pencil beam of electrons in the very high energy electron (VHEE, 50-250 MeV) range and a single detection layer for the determination of the beam profile. The technique constitutes a projectional, two-dimensional imaging method and thus also qualifies for the tomographic reconstruction of samples. Given the simplicity of the technical setup and its location behind the sample, the electronCT technique has potential synergies with VHEE radiotherapy, making use of the same electron source for both treatment and diagnostics and thus being a candidate for in-situ imaging and patient localization. At the same time, several technical challenges arise from the measurement technique when applied for the imaging of living beings. Measurements performed at the ARES linear particle accelerator at an electron energy of 155 MeV using a mouse phantom and a Timepix3 silicon pixel detector assembly demonstrate the feasibility of this technique. Both projectional and tomographic reconstructions are presented and the potential and limits of the technology are discussed.
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Submitted 30 September, 2024;
originally announced September 2024.
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TCAD Simulation of Stitching for Passive CMOS Strip Detectors
Authors:
Marta Baselga,
Jan Hendrik Arling,
Naomi Davis,
Jochen Dingfelder,
Ingrid-Maria Gregor,
Marc Hauser,
Fabian Huegging,
Karl Jakobs,
Michael Karagounis,
Roland Koppenhoefer,
Kevin Kroeninger,
Fabian Lex,
Ulrich Parzefall,
Birkan Sari,
Simon Spannagel,
Dennis Sperlich,
Jens Weingarten,
Iveta Zatocilova
Abstract:
Most of the tracking detectors for high energy particle experiments are filled with silicon detectors since they are radiation hard, they can give very small spatial resolution and they can take advantage of the silicon electronics foundries developments and production lines.
Strip detectors are very useful to cover large areas for tracking purposes, while consuming less power per area compared…
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Most of the tracking detectors for high energy particle experiments are filled with silicon detectors since they are radiation hard, they can give very small spatial resolution and they can take advantage of the silicon electronics foundries developments and production lines.
Strip detectors are very useful to cover large areas for tracking purposes, while consuming less power per area compared to pixel sensors. The majority of particle physics experiments use conventional silicon strip detectors fabricated in foundries that do not use stitching, relying on a very small number of foundries worldwide that can provide large amounts of strip detectors. Fabricating strip detectors in a CMOS foundry opens the possibility to use more foundries and to include active elements in the strips for future productions. For the passive CMOS strip detectors project we fabricated strip detectors in a CMOS foundry using two 1 cm2 reticles that are stitched together along the wafer. The fabricated strips stitched the reticles three and five times, and it was shown that the performance of those strips is not affected by the stitching.
This paper shows 3D TCAD simulations of the stitching area to investigate the possible effects stitching can have on the performance of the strip detectors, considering different stitching mismatches. We will show that the mismatch of stitched structures up to 1 um does not impact the performance with TCAD simulations which agrees with the results obtained from the measurements.
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Submitted 19 November, 2024; v1 submitted 26 September, 2024;
originally announced September 2024.
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4D-Tracking with Digital SiPMs
Authors:
Inge Diehl,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Stephan Lachnit,
Daniil Rastorguev,
Simon Spannagel,
Tomas Vanat,
Gianpiero Vignola
Abstract:
Silicon Photomultipliers (SiPMs) are the state-of-the-art technology in single-photon detection with solid-state detectors. Single Photon Avalanche Diodes (SPADs), the key element of SiPMs, can now be manufactured in CMOS processes, facilitating the integration of a SPAD array into custom monolithic ASICs. This allows implementing features such as signal digitization, masking, full hit-map readout…
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Silicon Photomultipliers (SiPMs) are the state-of-the-art technology in single-photon detection with solid-state detectors. Single Photon Avalanche Diodes (SPADs), the key element of SiPMs, can now be manufactured in CMOS processes, facilitating the integration of a SPAD array into custom monolithic ASICs. This allows implementing features such as signal digitization, masking, full hit-map readout, noise suppression, and photon counting in a monolithic CMOS chip. The complexity of the off-chip readout chain is thereby reduced.
These new features allow new applications for digital SiPMs, such as 4D-tracking of charged particles, where spatial resolutions of the order of $10 μm$ and timestamping with time resolutions of a few tens of ps are required.
A prototype of a digital SiPM was designed at DESY using the LFoundry $150 nm$ CMOS technology. Various studies were carried out in the laboratory and at the DESY II test-beam facility to evaluate the sensor performance in Minimum Ionizing Particles (MIPs) detection. The direct detection of charged particles was investigated for bare prototypes and assemblies coupling dSiPMs and thin LYSO crystals. Spatial resolution $\sim20 μm$ and a full-system time resolution of $\sim50 ps$ are measured using bare dSiPMs in direct MIP detection. Efficiency $>99.5 \%$, low noise rate and time resolution $<1 ns$ can be reached with the thin radiator coupling.
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Submitted 7 September, 2024;
originally announced September 2024.
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Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
Authors:
Håkan Wennlöf,
Dominik Dannheim,
Manuel Del Rio Viera,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Lennart Huth,
Stephan Lachnit,
Larissa Mendes,
Daniil Rastorguev,
Sara Ruiz Daza,
Paul Schütze,
Adriana Simancas,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Alessandra Tomal,
Anastasiia Velyka,
Gianpiero Vignola
Abstract:
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an e…
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The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an example. The full simulation workflow is described, along with possible pitfalls and how to avoid them. For commercial CMOS processes, detailed doping profiles are confidential, but the presented method provides an optimisation tool that is sufficiently accurate to investigate sensor behaviour and trade-offs of different sensor designs without knowledge of proprietary information.
The workflow starts with detailed electric field finite element method simulations in TCAD, using generic doping profiles. Examples of the effect of varying different parameters of the simulated sensor are shown, as well as the creation of weighting fields, and transient pulse simulations. The fields resulting from TCAD simulations can be imported into the Allpix Squared Monte Carlo simulation framework, which enables high-statistics simulations, including modelling of stochastic fluctuations from the underlying physics processes of particle interaction. Example Monte Carlo simulation setups are presented and the different parts of a simulation chain are described.
Simulation studies from small collection electrode CMOS sensors are presented, and example results are shown for both single sensors and multiple sensors in a test beam telescope configuration. The studies shown are those typically performed on sensor prototypes in test beam campaigns, and a comparison is made to test beam data, showing a maximum deviation of 4% and demonstrating that the approach is viable for generating realistic results.
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Submitted 31 July, 2024;
originally announced August 2024.
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Characterisation and simulation of stitched CMOS strip sensors
Authors:
Naomi Davis,
Jan-Hendrik Arling,
Marta Baselga,
Leena Diehl,
Jochen Dingfelder,
Ingrid-Maria Gregor,
Marc Hauser,
Fabian Hügging,
Tomasz Hemperek,
Karl Jakobs,
Michael Karagounis,
Roland Koppenhöfer,
Kevin Kröninger,
Fabian Lex,
Ulrich Parzefall,
Arturo Rodriguez,
Birkan Sari,
Niels Sorgenfrei,
Simon Spannagel,
Dennis Sperlich,
Tianyang Wang,
Jens Weingarten,
Iveta Zatocilova
Abstract:
In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two dif…
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In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.
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Submitted 14 May, 2024;
originally announced May 2024.
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Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
Authors:
Gianluca Aglieri Rinella,
Giacomo Alocco,
Matias Antonelli,
Roberto Baccomi,
Stefania Maria Beole,
Mihail Bogdan Blidaru,
Bent Benedikt Buttwill,
Eric Buschmann,
Paolo Camerini,
Francesca Carnesecchi,
Marielle Chartier,
Yongjun Choi,
Manuel Colocci,
Giacomo Contin,
Dominik Dannheim,
Daniele De Gruttola,
Manuel Del Rio Viera,
Andrea Dubla,
Antonello di Mauro,
Maurice Calvin Donner,
Gregor Hieronymus Eberwein,
Jan Egger,
Laura Fabbietti,
Finn Feindt,
Kunal Gautam
, et al. (69 additional authors not shown)
Abstract:
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25…
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Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25 $μ$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations.
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Submitted 13 March, 2024;
originally announced March 2024.
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Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology
Authors:
Adriana Simancas,
Justus Braach,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Manuel Del Rio Viera,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Judith Schlaadt,
Paul Schütze,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improv…
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Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach.
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Submitted 22 February, 2024;
originally announced February 2024.
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The DESY Digital Silicon Photomultiplier: Device Characteristics and First Test-Beam Results
Authors:
Finn Feindt,
Inge Diehl,
Karsten Hansen,
Stephan Lachnit,
Frauke Poblotzki,
Daniil Rastorguev,
Simon Spannagel,
Tomas Vanat,
Gianpiero Vignola
Abstract:
Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few tens of picoseconds, which makes them interesting candidates for timing detectors in tracking systems for particle physics experiments. The Geiger discharges trig…
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Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few tens of picoseconds, which makes them interesting candidates for timing detectors in tracking systems for particle physics experiments. The Geiger discharges triggered in the sensitive elements of a SiPM, Single-Photon Avalanche Diodes (SPADs), yield signal amplitudes independent of the energy deposited by a photon or ionizing particle. This intrinsically digital nature of the signal motivates its digitization already on SPAD level.
A digital SiPM (dSiPM) was designed at Deutsches Elektronen Synchrotron (DESY), combining a SPAD array with embedded CMOS circuitry for on-chip signal processing. A key feature of the DESY dSiPM is its capability to provide hit-position information on pixel level, and one hit time stamp per quadrant at a 3 MHz readout-frame rate. The pixels comprise four SPADs and have a pitch of about 70 um. The four time stamps are provided by 12 bit Time-to-Digital Converters (TDCs) with a resolution better than 100 ps.
The chip was characterized in the laboratory to determine dark count rate, breakdown voltage, and TDC characteristics. Test-beam measurements are analyzed to assess the DESY dSiPMs performance in the context of a 4D-tracking applications. The results demonstrate a spatial hit resolution on a pixel level, a minimum-ionizing particle detection efficiency of about 30 % and a time resolution in the order of 50 ps.
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Submitted 31 January, 2025; v1 submitted 19 February, 2024;
originally announced February 2024.
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Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~μ$m pixel pitch
Authors:
I. Diehl,
K. Hansen,
T. Vanat,
G. Vignola,
F. Feindt,
D. Rastorguev,
S. Spannagel
Abstract:
This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32$~\times~$32 pixel matrix at 70$~μ$m pitch. The IC provides per-quadrant time stamping and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sha…
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This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32$~\times~$32 pixel matrix at 70$~μ$m pitch. The IC provides per-quadrant time stamping and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sharing a quenching and subsequent processing circuitry and has a fill factor of 30$~\%$. A sub-100$~$ps precision, 12-bit time-to-digital converter (TDC) provides timestamps per quadrant with an acquisition rate of 3$~$MHz. Together with the hit map, the total sustained data throughput of the IC amounts to 4$~$Gbps. Measurements obtained in a dark, temperature-stable environment as well as by using a pulsed laser environment show the full dSiPM-IC functionality. The dark-count rate (DCR) as function of the overvoltage and temperature, the TDC resolution, differential and integral nonlinearity (DNL/INL) as well as the propagation-delay variations across the matrix are presented. With aid of additional peripheral test structures, the main building blocks are characterized and key parameters are presented.
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Submitted 22 November, 2023;
originally announced November 2023.
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Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors
Authors:
I. Zatocilova,
J. -H. Arling,
M. Baselga,
N. Davis,
L. Diehl,
J. Dingfelder,
I. -M. Gregor,
M. Hauser,
T. Hemperek,
F. Hügging,
K. Jakobs,
M. Karagounis,
K. Kröninger,
F. Lex,
U. Parzefall,
A. Rodriguez,
B. Sari,
N. Sorgenfrei,
S. Spannagel,
D. Sperlich,
T. Wang,
J. Weingarten
Abstract:
In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors w…
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In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors were tested in a probe station and characterised with a Sr90-source as well as laser-based edge- and top-TCT systems. Sensors were also simulated using Sentaurus TCAD. At last, detector modules were constructed from several sensors and thoroughly studied in two beam campaigns at DESY. All of these measurements were performed before and after irradiation. This contribution provides an overview of simulation results, summarises the laboratory measurements and in particular presents first test beam results for irradiated and unirradiated passive CMOS strip sensors. We are demonstrating that large area sensors with sufficient radiation hardness can be obtained by stitching during the CMOS process, and presenting our plans for the next submission in the framework of this project.
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Submitted 15 November, 2023; v1 submitted 28 September, 2023;
originally announced September 2023.
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Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors
Authors:
Adriana Simancas,
Justus Braach,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Manuel Del Rio Viera,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Paul Schütze,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scatterin…
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Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. The Tangerine Project WP1 at DESY participates in the Strategic R&D Programme and is focused on the development of a monolithic active pixel sensor with a time and spatial resolution compatible with the requirements for a future lepton collider vertex detector. By fulfilling these requirements, the Tangerine detector is suitable as well to be used as telescope planes for the DESY-II Test Beam facility. The project comprises all aspects of sensor development, from the electronics engineering and the sensor design using simulations, to laboratory and test beam investigations of prototypes. Generic TCAD Device and Monte-Carlo simulations are used to establish an understanding of the technology and provide important insight into performance parameters of the sensor. Testing prototypes in laboratory and test beam facilities allows for the characterization of their response to different conditions. By combining results from all these studies it is possible to optimize the sensor layout. This contribution presents results from generic TCAD and Monte-Carlo simulations, and measurements performed with test chips of the first sensor submission.
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Submitted 31 March, 2023;
originally announced March 2023.
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Ultrafast CMOS image sensors and data-enabled super-resolution for multimodal radiographic imaging and tomography
Authors:
Xin Yue,
Shanny Lin,
Wenting Li,
Bradley T. Wolfe,
Steven Clayton,
Mark Makela,
C. L. Morris,
Simon Spannagel,
Erik Ramberg,
Juan Estrada,
Hao Zhu,
Jifeng Liu,
Eric R. Fossum,
Zhehui Wang
Abstract:
We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve sub-pixel resolution (thus $super$-$resolution$). The combination of novel CMOS pixel designs and data-enabled image post-processing provides a promising path toward…
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We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve sub-pixel resolution (thus $super$-$resolution$). The combination of novel CMOS pixel designs and data-enabled image post-processing provides a promising path towards ultrafast high-resolution multi-modal radiographic imaging and tomography applications.
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Submitted 27 January, 2023;
originally announced January 2023.
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Towards a New Generation of Monolithic Active Pixel Sensors
Authors:
Ankur Chauhan,
Manuel Del Rio Viera,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Paul Schütze,
Adriana Simancas,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. In addition, they allow for significant red…
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A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. In addition, they allow for significant reductions of the material budget of detector systems, due to the smaller physical thicknesses of the active sensor and the absence of a separate readout chip. The TANGERINE project develops a sensor suitable for future Higgs factories as well as for a beam telescope to be used at beam-test facilities. The sensors will have small collection electrodes (order of $μ$m) to maximize the signal-to-noise ratio, which makes it possible to minimize power dissipation in the circuitry. The first batch of test chips, featuring full front-end amplifiers with Krummenacher feedback, was produced and tested at the Mainzer Mikrotron (MAMI) at the end of 2021. MAMI provides an electron beam with currents up to 100 $μ$A and an energy of 855 MeV. The analog output signal of the test chips was recorded with a high bandwidth oscilloscope and used to study the charge-sensitive amplifier of the chips in terms of waveform analysis. A beam telescope was used as a reference system to allow for track-based analysis of the recorded data.
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Submitted 18 October, 2022;
originally announced October 2022.
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The Tangerine project: Development of high-resolution 65 nm silicon MAPS
Authors:
Håkan Wennlöf,
Ankur Chauhan,
Manuel Del Rio Viera,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Paul Schütze,
Adriana Simancas,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola
Abstract:
The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection electrode. This is the first application of this process in particle physics, and it is of great interest as it allows for an increased logic density and reduced…
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The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection electrode. This is the first application of this process in particle physics, and it is of great interest as it allows for an increased logic density and reduced power consumption and material budget compared to other processes. The process is envisioned to be used in for example the next ALICE inner tracker upgrade, and in experiments at the electron-ion collider.
The initial goal of the three-year Tangerine project is to develop and test a sensor in a 65 nm CMOS imaging process that can be used in test beam telescopes at DESY, providing excellent spatial resolution and high time resolution, and thus demonstrating the capabilities of the process. The project covers all aspects of sensor R&D, from electronics and sensor design using simulations, to prototype test chip characterisation in labs and at test beams. The sensor design simulations are performed by using a powerful combination of detailed electric field simulations using technology computer-aided design and high-statistics Monte Carlo simulations using the Allpix Squared framework. A first prototype test chip in the process has been designed and produced, and successfully operated and tested both in labs and at test beams.
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Submitted 11 June, 2022;
originally announced June 2022.
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Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD
Authors:
Katharina Dort,
Rafael Ballabriga,
Justus Braach,
Eric Buschmann,
Michael Campbell,
Dominik Dannheim,
Lennart Huth,
Iraklis Kremastiotis,
Jens Kröger,
Lucie Linssen,
Magdalena Munker,
Walter Snoeys,
Simon Spannagel,
Peter Švihra,
Tomas Vanat
Abstract:
Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams ar…
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Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.
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Submitted 30 August, 2022; v1 submitted 22 April, 2022;
originally announced April 2022.
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Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors
Authors:
Rafael Ballabriga,
Justus Braach,
Eric Buschmann,
Michael Campbell,
Dominik Dannheim,
Katharina Dort,
Lennart Huth,
Iraklis Kremastiotis,
Jens Kröger,
Lucie Linssen,
Magdalena Munker,
Paul Schütze,
Walter Snoeys,
Simon Spannagel,
Tomas Vanat
Abstract:
An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and produc…
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An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and production of secondary particles, which offers a realistic simulation scenario. The transient simulation approach is an important tool to achieve an accurate time-resolved description of the sensor, which is crucial in the face of novel detector prototypes with increasingly precise timing capabilities. The simulated time resolution as a function of operating parameters as well as the full transient pulse can be monitored and assessed, which offers a new perspective on the optimisation and characterisation of silicon sensors.
In this paper, a combination of electrostatic finite-element simulations using 3D TCAD and transient Monte Carlo simulations with the Allpix Squared framework are presented for a monolithic CMOS pixel sensor with a small collection diode, that is characterised by a highly inhomogeneous, complex electric field. The results are compared to transient 3D TCAD simulations that offer a precise simulation of the transient behaviour but long computation times. Additionally, the simulations are benchmarked against test-beam data and good agreement is found for the performance parameters over a wide range of different operation conditions.
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Submitted 9 February, 2022; v1 submitted 7 February, 2022;
originally announced February 2022.
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Allpix$^2$ -- Silicon Detector Monte Carlo Simulations for Particle Physics and Beyond
Authors:
Simon Spannagel,
Paul Schütze
Abstract:
Allpix$^2$ is a versatile, open-source simulation framework for silicon pixel detectors. Its goal is to ease the implementation of detailed simulations for both single sensors and more complex setups with multiple detectors. While originally created for silicon detectors in high-energy physics, it is capable of simulating a wide range of detector types for various application scenarios, through it…
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Allpix$^2$ is a versatile, open-source simulation framework for silicon pixel detectors. Its goal is to ease the implementation of detailed simulations for both single sensors and more complex setups with multiple detectors. While originally created for silicon detectors in high-energy physics, it is capable of simulating a wide range of detector types for various application scenarios, through its interface to Geant4 to describe the interaction of particles with matter, and the different algorithms for charge transport and digitization. The simulation chain is arranged with the help of intuitive configuration files and an extensible system of modules, which implement the individual simulation steps. Detailed electric field maps imported from TCAD simulations can be used to precisely model the drift behavior of the charge carriers, bringing a new level of realism to the Monte Carlo simulation of particle detectors. Recently, Allpix$^2$ has seen major improvements to its core framework to take full advantage of multi- and many-core processor architectures for simulating events fully parallel. Furthermore, new physics models such as charge carrier recombination in silicon have been introduced, further extending the application range. This contribution provides an overview of the framework and its components, highlighting the versatility and recent developments.
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Submitted 16 December, 2021;
originally announced December 2021.
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A laser-plasma platform for photon-photon physics
Authors:
B. Kettle,
D. Hollatz,
E. Gerstmayr,
G. M. Samarin,
A. Alejo,
S. Astbury,
C. Baird,
S. Bohlen,
M. Campbell,
C. Colgan,
D. Dannheim,
C. Gregory,
H. Harsh,
P. Hatfield,
J. Hinojosa,
Y. Katzir,
J. Morton,
C. D. Murphy,
A. Nurnberg,
J. Osterhoff,
G. Pérez-Callejo,
K. Poder,
P. P. Rajeev,
C. Roedel,
F. Roeder
, et al. (13 additional authors not shown)
Abstract:
We describe a laser-plasma platform for photon-photon collision experiments to measure fundamental quantum electrodynamic processes such as the linear Breit-Wheeler process with real photons. The platform has been developed using the Gemini laser facility at the Rutherford Appleton Laboratory. A laser wakefield accelerator and a bremsstrahlung convertor are used to generate a collimated beam of ph…
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We describe a laser-plasma platform for photon-photon collision experiments to measure fundamental quantum electrodynamic processes such as the linear Breit-Wheeler process with real photons. The platform has been developed using the Gemini laser facility at the Rutherford Appleton Laboratory. A laser wakefield accelerator and a bremsstrahlung convertor are used to generate a collimated beam of photons with energies of hundreds of MeV, that collide with keV x-ray photons generated by a laser heated plasma target. To detect the pairs generated by the photon-photon collisions, a magnetic transport system has been developed which directs the pairs onto scintillation-based and hybrid silicon pixel single particle detectors. We present commissioning results from an experimental campaign using this laser-plasma platform for photon-photon physics, demonstrating successful generation of both photon sources, characterisation of the magnetic transport system and calibration of the single particle detectors, and discuss the feasibility of this platform for the observation of the Breit-Wheeler process. The design of the platform will also serve as the basis for the investigation of strong-field quantum electrodynamic processes such as the nonlinear Breit-Wheeler and the Trident process, or eventually, photon-photon scattering.
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Submitted 5 July, 2021; v1 submitted 29 June, 2021;
originally announced June 2021.
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Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
Authors:
R. Ballabriga,
E. Buschmann,
M. Campbell,
D. Dannheim,
K. Dort,
N. Egidos,
L. Huth,
I. Kremastiotis,
J. Kröger,
L. Linssen,
X. Llopart,
M. Munker,
A. Nürnberg,
W. Snoeys,
S. Spannagel,
T. Vanat,
M. Vicente,
M. Williams
Abstract:
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the trackin…
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The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC tracking detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collection. The pixel matrix consists of $16\times128$ detection channels measuring $300 \times 30$ microns. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the characterisation results of the CLICTD sendor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a time resolution down to $(5.8 \pm 0.1)$ ns and a spatial resolution down to $(4.6 \pm 0.2)$ microns are measured. The hit detection efficiency is found to be well above 99.7% for thresholds of the order of several hundred electrons.
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Submitted 8 February, 2021;
originally announced February 2021.
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Corryvreckan: A Modular 4D Track Reconstruction and Analysis Software for Test Beam Data
Authors:
Dominik Dannheim,
Katharina Dort,
Lennart Huth,
Daniel Hynds,
Iraklis Kremastiotis,
Jens Kröger,
Magdalena Munker,
Florian Pitters,
Paul Schütze,
Simon Spannagel,
Tomas Vanat,
Morag Williams
Abstract:
Corryvreckan is a versatile, highly configurable software with a modular structure designed to reconstruct and analyse test beam and laboratory data. It caters to the needs of the test beam community by providing a flexible offline event building facility to combine detectors with different read-out schemes, with or without trigger information, and includes the possibility to correlate data from m…
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Corryvreckan is a versatile, highly configurable software with a modular structure designed to reconstruct and analyse test beam and laboratory data. It caters to the needs of the test beam community by providing a flexible offline event building facility to combine detectors with different read-out schemes, with or without trigger information, and includes the possibility to correlate data from multiple devices based on timestamps.
Hit timing information, available with high precision from an increasing number of detectors, can be used in clustering and tracking to reduce combinatorics. Several algorithms, including an implementation of Millepede-II, are provided for offline alignment. A graphical user interface enables direct monitoring of the reconstruction progress and can be employed for quasi-online monitoring during data taking.
This work introduces the Corryvreckan framework architecture and user interface, and provides a detailed overview of the event building algorithm. The reconstruction and analysis capabilities are demonstrated with data recorded at the DESY II Test Beam Facility using the EUDAQ2 data acquisition framework with an EUDET-type beam telescope, a Timepix3 timing reference, a fine-pitch planar silicon sensor with CLICpix2 readout and the AIDA Trigger Logic Unit. The individual steps of the reconstruction chain are presented in detail.
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Submitted 13 January, 2021; v1 submitted 25 November, 2020;
originally announced November 2020.
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EUTelescope: A modular reconstruction framework for beam telescope data
Authors:
Tobias Bisanz,
Hendrik Jansen,
Jan-Hendrik Arling,
Antonio Bulgheroni,
Jan Dreyling-Eschweiler,
Thomas Eichhorn,
Ingrid-Maria Gregor,
Phlillip Hamnett,
Claus Kleinwort,
Alexander Morton,
Hanno Perrey,
Michaela Queitsch-Maitland,
Edoardo Rossi,
Simon Spannagel
Abstract:
EUTelescope is a modular, comprehensive software framework for the reconstruction of particle trajectories recorded with beam telescopes. Its modularity allows for a flexible usage of processors each fulfilling separate tasks of the reconstruction chain such as clustering, alignment and track fitting. %The reconstruction chain is directed via XML steering files. The framework facilitates the usage…
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EUTelescope is a modular, comprehensive software framework for the reconstruction of particle trajectories recorded with beam telescopes. Its modularity allows for a flexible usage of processors each fulfilling separate tasks of the reconstruction chain such as clustering, alignment and track fitting. %The reconstruction chain is directed via XML steering files. The framework facilitates the usage of any position sensitive device for both the beam telescope sensors as well as the device under test and supports a wide range of geometric arrangements of the sensors.
In this work, the functionality of the EUTelescope framework as released in v2.2 and its underlying dependencies are discussed. Various use cases with emphasis on the General Broken Lines advanced track fitting methods give examples of the work flow and capabilities of the framework.
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Submitted 20 November, 2020;
originally announced November 2020.
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Combining TCAD and Monte Carlo Methods to Simulate CMOS Pixel Sensors with a Small Collection Electrode using the Allpix Squared Framework
Authors:
Dominik Dannheim,
Katharina Dort,
Daniel Hynds,
Magdalena Munker,
Andreas Nürnberg,
Walter Snoeys,
Simon Spannagel
Abstract:
Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and the inclusion of Landau fluctuations and production of secondary particles in the sensor are crucial ingredients for the understanding and reproduction of detect…
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Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and the inclusion of Landau fluctuations and production of secondary particles in the sensor are crucial ingredients for the understanding and reproduction of detector characteristics.
In this paper, a CMOS pixel sensor with small collection electrode design, implemented in a high-resistivity epitaxial layer, is simulated by integrating a detailed electric field model from finite element TCAD into a Monte Carlo based simulation with the Allpix$^2$ framework. The simulation results are compared to data recorded in test-beam measurements and very good agreement is found for various quantities such as cluster size, spatial resolution and efficiency. Furthermore, the observables are studied as a function of the intra-pixel incidence position to enable a detailed comparison with the detector behavior observed in data.
The validation of such simulations is fundamental for modeling the detector response and for predicting the performance of future prototype designs. Moreover, visualization plots extracted from the charge carrier drift model of the framework can aid in understanding the charge propagation behavior in different regions of the sensor.
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Submitted 28 February, 2020;
originally announced February 2020.
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Silicon Vertex & Tracking Detectors for the Compact Linear Collider
Authors:
Simon Spannagel
Abstract:
CLIC is a proposed linear $e^+e^-$ collider with center-of-mass energies of up to 3 TeV. Its main objectives are precise top quark, Higgs boson and Beyond Standard Model physics. In addition to spatial resolutions of a few micrometers and a very low material budget, the vertex and tracking detectors also require timing capabilities with a precision of a few nanoseconds to allow suppression of beam…
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CLIC is a proposed linear $e^+e^-$ collider with center-of-mass energies of up to 3 TeV. Its main objectives are precise top quark, Higgs boson and Beyond Standard Model physics. In addition to spatial resolutions of a few micrometers and a very low material budget, the vertex and tracking detectors also require timing capabilities with a precision of a few nanoseconds to allow suppression of beam-induced background particles. Different technologies using hybrid silicon detectors are explored for the vertex detectors, such as dedicated 65 nm readout ASICs, small-pitch sensors as well as bonding using anisotropic conductive films. Monolithic sensors are the current choice for the tracking detector, and a prototype using a 180 nm high-resistivity CMOS process has been designed and produced, and is currently under evaluation. Different designs using a silicon-on-insulator process are under investigation for both vertex and tracking detector. All prototypes are tested in laboratory and beam tests, and newly developed simulation tools combining Geant4 and TCAD are used to assess and optimize their performance. This contribution gives an overview of the R&D program for the CLIC vertex and tracking detectors, highlighting new results from the prototypes.
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Submitted 24 February, 2020;
originally announced February 2020.
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User Manual for the Corryvreckan Test Beam Data Reconstruction Framework, Version 1.0
Authors:
Jens Kröger,
Simon Spannagel,
Morag Williams
Abstract:
Test beam data reconstruction is a task that requires a large amount of flexibility due to the heterogeneous data acquisition environments found in these experiments. Often, detectors with different readout schemes such as triggered, frame-based or data driven approaches are combined in a single setup. In order to correlate these data and to reconstruct particle tracks, a versatile event building…
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Test beam data reconstruction is a task that requires a large amount of flexibility due to the heterogeneous data acquisition environments found in these experiments. Often, detectors with different readout schemes such as triggered, frame-based or data driven approaches are combined in a single setup. In order to correlate these data and to reconstruct particle tracks, a versatile event building algorithm and analysis framework is required. Corryvreckan is a flexible, fast and lightweight test beam data reconstruction framework based on a modular concept of the reconstruction chain. It is written in modern C++ , requires a minimum of external dependencies and is designed to be fully configurable by the user without the need to alter code. This document presents the user manual of the software as of release version 1.0.
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Submitted 2 December, 2019;
originally announced December 2019.
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EUDAQ $-$ A Data Acquisition Software Framework for Common Beam Telescopes
Authors:
P. Ahlburg,
S. Arfaoui,
J. -H. Arling,
H. Augustin,
D. Barney,
M. Benoit,
T. Bisanz,
E. Corrin,
D. Cussans,
D. Dannheim,
J. Dreyling-Eschweiler,
T. Eichhorn,
A. Fiergolski,
I. -M. Gregor,
J. Grosse-Knetter,
D. Haas,
L. Huth,
A. Irles,
H. Jansen,
J. Janssen,
M. Keil,
J. S. Keller,
M. Kiehn,
H. J. Kim,
J. Kroll
, et al. (32 additional authors not shown)
Abstract:
EUDAQ is a generic data acquisition software developed for use in conjunction with common beam telescopes at charged particle beam lines. Providing high-precision reference tracks for performance studies of new sensors, beam telescopes are essential for the research and development towards future detectors for high-energy physics. As beam time is a highly limited resource, EUDAQ has been designed…
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EUDAQ is a generic data acquisition software developed for use in conjunction with common beam telescopes at charged particle beam lines. Providing high-precision reference tracks for performance studies of new sensors, beam telescopes are essential for the research and development towards future detectors for high-energy physics. As beam time is a highly limited resource, EUDAQ has been designed with reliability and ease-of-use in mind. It enables flexible integration of different independent devices under test via their specific data acquisition systems into a top-level framework. EUDAQ controls all components globally, handles the data flow centrally and synchronises and records the data streams. Over the past decade, EUDAQ has been deployed as part of a wide range of successful test beam campaigns and detector development applications.
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Submitted 18 November, 2019; v1 submitted 30 September, 2019;
originally announced September 2019.
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Detector Technologies for CLIC
Authors:
A. C. Abusleme Hoffman,
G. Parès,
T. Fritzsch,
M. Rothermund,
H. Jansen,
K. Krüger,
F. Sefkow,
A. Velyka,
J. Schwandt,
I. Perić,
L. Emberger,
C. Graf,
A. Macchiolo,
F. Simon,
M. Szalay,
N. van der Kolk,
H. Abramowicz,
Y. Benhammou,
O. Borysov,
M. Borysova,
A. Joffe,
S. Kananov,
A. Levy,
I. Levy,
G. Eigen
, et al. (107 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Stan…
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The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Standard Model processes, particularly in the Higgs-boson and top-quark sectors. The precision required for such measurements and the specific conditions imposed by the beam dimensions and time structure put strict requirements on the detector design and technology. This includes low-mass vertexing and tracking systems with small cells, highly granular imaging calorimeters, as well as a precise hit-time resolution and power-pulsed operation for all subsystems. A conceptual design for the CLIC detector system was published in 2012. Since then, ambitious R&D programmes for silicon vertex and tracking detectors, as well as for calorimeters have been pursued within the CLICdp, CALICE and FCAL collaborations, addressing the challenging detector requirements with innovative technologies. This report introduces the experimental environment and detector requirements at CLIC and reviews the current status and future plans for detector technology R&D.
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Submitted 7 May, 2019;
originally announced May 2019.
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Scattering studies with the DATURA beam telescope
Authors:
Hendrik Jansen,
Jan Dreyling-Eschweiler,
Paul Schütze,
Simon Spannagel
Abstract:
High-precision particle tracking devices allow for two-dimensional analyses of the material budget distribution of particle detectors and their periphery. In this contribution, the material budget of different targets is reconstructed from the width of the angular distribution of scattered beam particle at a sample under test. Electrons in the GeV-range serve as beam particles carrying enough mome…
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High-precision particle tracking devices allow for two-dimensional analyses of the material budget distribution of particle detectors and their periphery. In this contribution, the material budget of different targets is reconstructed from the width of the angular distribution of scattered beam particle at a sample under test. Electrons in the GeV-range serve as beam particles carrying enough momentum to traverse few millimetre thick targets whilst offering sufficient deflection for precise measurement. Reference measurements of the scattering angle distribution of targets of known thicknesses are presented that serve as calibration techniques required for tomographic reconstructions of inhomogeneous objects.
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Submitted 11 March, 2019;
originally announced March 2019.
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Time Resolution Studies with Timepix3 Assemblies with Thin Silicon Pixel Sensors
Authors:
Florian Pitters,
Nilou Alipour Tehrani,
Dominik Dannheim,
Adrian Fiergolski,
Daniel Hynds,
Wolfgang Klempt,
Xavi Llopart,
Magdalena Munker,
Andreas Nürnberg,
Simon Spannagel,
Morag Williams
Abstract:
Timepix3 is a multi-purpose readout ASIC for hybrid pixel detectors. It can measure time and energy simultaneously by employing time-of-arrival (ToA) and time-over-threshold (ToT) techniques. Both methods are systematically affected by timewalk. In this paper, a method for pixel-by-pixel calibration of the time response is presented. Assemblies of Timepix3 ASICs bump-bonded to thin planar silicon…
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Timepix3 is a multi-purpose readout ASIC for hybrid pixel detectors. It can measure time and energy simultaneously by employing time-of-arrival (ToA) and time-over-threshold (ToT) techniques. Both methods are systematically affected by timewalk. In this paper, a method for pixel-by-pixel calibration of the time response is presented. Assemblies of Timepix3 ASICs bump-bonded to thin planar silicon pixel sensors of different thicknesses between 50 um and 150 um are calibrated and characterised in particle beams. For minimum ionising particles, time resolutions down to 0.72 $\pm$ 0.04 ns are achieved.
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Submitted 10 March, 2019; v1 submitted 21 January, 2019;
originally announced January 2019.
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A detector for CLIC: main parameters and performance
Authors:
Dominik Arominski,
Jean-Jacques Blaising,
Erica Brondolin,
Dominik Dannheim,
Konrad Elsener,
Frank Gaede,
Ignacio García-García,
Steven Green,
Daniel Hynds,
Emilia Leogrande,
Lucie Linssen,
John Marshall,
Nikiforos Nikiforou,
Andreas Nürnberg,
Estel Perez-Codina,
Marko Petrič,
Florian Pitters,
Aidan Robson,
Philipp Roloff,
André Sailer,
Ulrike Schnoor,
Frank Simon,
Rosa Simoniello,
Simon Spannagel,
Rickard Ström
, et al. (3 additional authors not shown)
Abstract:
Together with the recent CLIC detector model CLICdet a new software suite was introduced for the simulation and reconstruction of events in this detector. This note gives a brief introduction to CLICdet and describes the CLIC experimental conditions at 380 GeV and 3 TeV, including beam-induced backgrounds. The simulation and reconstruction tools are introduced, and the physics performance obtained…
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Together with the recent CLIC detector model CLICdet a new software suite was introduced for the simulation and reconstruction of events in this detector. This note gives a brief introduction to CLICdet and describes the CLIC experimental conditions at 380 GeV and 3 TeV, including beam-induced backgrounds. The simulation and reconstruction tools are introduced, and the physics performance obtained is described in terms of single particles, particles in jets, jet energy resolution and flavour tagging. The performance of the very forward electromagnetic calorimeters is also discussed.
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Submitted 18 December, 2018;
originally announced December 2018.
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The Compact Linear Collider (CLIC) - 2018 Summary Report
Authors:
The CLIC,
CLICdp collaborations,
:,
T. K. Charles,
P. J. Giansiracusa,
T. G. Lucas,
R. P. Rassool,
M. Volpi,
C. Balazs,
K. Afanaciev,
V. Makarenko,
A. Patapenka,
I. Zhuk,
C. Collette,
M. J. Boland,
A. C. Abusleme Hoffman,
M. A. Diaz,
F. Garay,
Y. Chi,
X. He,
G. Pei,
S. Pei,
G. Shu,
X. Wang,
J. Zhang
, et al. (671 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a TeV-scale high-luminosity linear $e^+e^-$ collider under development at CERN. Following the CLIC conceptual design published in 2012, this report provides an overview of the CLIC project, its current status, and future developments. It presents the CLIC physics potential and reports on design, technology, and implementation aspects of the accelerator and the…
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The Compact Linear Collider (CLIC) is a TeV-scale high-luminosity linear $e^+e^-$ collider under development at CERN. Following the CLIC conceptual design published in 2012, this report provides an overview of the CLIC project, its current status, and future developments. It presents the CLIC physics potential and reports on design, technology, and implementation aspects of the accelerator and the detector. CLIC is foreseen to be built and operated in stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. CLIC uses a two-beam acceleration scheme, in which 12 GHz accelerating structures are powered via a high-current drive beam. For the first stage, an alternative with X-band klystron powering is also considered. CLIC accelerator optimisation, technical developments and system tests have resulted in an increased energy efficiency (power around 170 MW) for the 380 GeV stage, together with a reduced cost estimate at the level of 6 billion CHF. The detector concept has been refined using improved software tools. Significant progress has been made on detector technology developments for the tracking and calorimetry systems. A wide range of CLIC physics studies has been conducted, both through full detector simulations and parametric studies, together providing a broad overview of the CLIC physics potential. Each of the three energy stages adds cornerstones of the full CLIC physics programme, such as Higgs width and couplings, top-quark properties, Higgs self-coupling, direct searches, and many precision electroweak measurements. The interpretation of the combined results gives crucial and accurate insight into new physics, largely complementary to LHC and HL-LHC. The construction of the first CLIC energy stage could start by 2026. First beams would be available by 2035, marking the beginning of a broad CLIC physics programme spanning 25-30 years.
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Submitted 6 May, 2019; v1 submitted 14 December, 2018;
originally announced December 2018.
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Technologies for Future Vertex and Tracking Detectors at CLIC
Authors:
Simon Spannagel
Abstract:
CLIC is a proposed linear $e^{+}e^{-}$ collider with center-of-mass energies of up to $3\,\textrm{TeV}$. Its main objectives are precise top quark and Higgs boson measurements, as well as searches for Beyond Standard Model physics. To meet the physics goals, the vertex and tracking detectors require not only a spatial resolution of a few micrometers and a very low material budget, but also timing…
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CLIC is a proposed linear $e^{+}e^{-}$ collider with center-of-mass energies of up to $3\,\textrm{TeV}$. Its main objectives are precise top quark and Higgs boson measurements, as well as searches for Beyond Standard Model physics. To meet the physics goals, the vertex and tracking detectors require not only a spatial resolution of a few micrometers and a very low material budget, but also timing capabilities with a precision of a few nanoseconds to allow suppression of beam-induced backgrounds.
Different technologies using hybrid silicon detectors are explored for the vertex detectors, such as dedicated readout ASICs, small-pitch active edge sensors as well as capacitively coupled High-Voltage CMOS sensors. Monolithic sensors are considered as an option for the tracking detector, and a prototype using a CMOS process with a high-resistivity epitaxial layer is being designed. Different designs using a silicon-on-insulator process are under investigation for both vertex and tracking detector.
All prototypes are evaluated in laboratory and beam tests, and newly developed simulation tools combining Geant4 and TCAD are used to assess and optimize their performance. This contribution gives an overview of the R&D program for the CLIC vertex and tracking detectors, highlighting new results from the prototypes.
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Submitted 6 December, 2018;
originally announced December 2018.
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Allpix$^2$: A Modular Simulation Framework for Silicon Detectors
Authors:
Simon Spannagel,
Koen Wolters,
Daniel Hynds,
Niloufar Alipour Tehrani,
Mathieu Benoit,
Dominik Dannheim,
Neal Gauvin,
Andreas Nürnberg,
Paul Schütze,
Mateus Vicente Barreto Pinto
Abstract:
Allpix$^2$ (read: Allpix Squared) is a generic, open-source software framework for the simulation of silicon pixel detectors. Its goal is to ease the implementation of detailed simulations for both single detectors and more complex setups such as beam telescopes from incident radiation to the digitised detector response. Predefined detector types can be automatically constructed from simple model…
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Allpix$^2$ (read: Allpix Squared) is a generic, open-source software framework for the simulation of silicon pixel detectors. Its goal is to ease the implementation of detailed simulations for both single detectors and more complex setups such as beam telescopes from incident radiation to the digitised detector response. Predefined detector types can be automatically constructed from simple model files describing the detector parameters.
The simulation chain is arranged with the help of intuitive configuration files and an extensible system of modules, which implement separate simulation steps such as realistic charge carrier deposition with the Geant4 toolkit or propagation of charge carriers in silicon using a drift-diffusion model. Detailed electric field maps imported from TCAD simulations can be used to precisely model the drift behaviour of charge carriers within the silicon, bringing a new level of realism to Monte Carlo based simulations of particle detectors.
This paper provides an overview of the framework and a selection of different simulation modules, and presents a comparison of simulation results with test beam data recorded with hybrid pixel detectors. Emphasis is placed on the performance of the framework itself, using a first-principles simulation of the detectors without addressing secondary ASIC-specific effects.
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Submitted 15 June, 2018;
originally announced June 2018.
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Summary and Conclusions of the 'JRA Beam Telescope 2025'-Forum at the 6th Beam Telescopes and Test Beams Workshop
Authors:
J. Dreyling-Eschweiler,
H. Jansen,
M. S. Amjad,
J. -H. Arling,
T. Coates,
A. Dätwyler,
D. Dannheim,
M. W. U. van Dijk,
T. Eichhorn,
A. Gerbershagen,
O. Girard,
B. Gkotse,
F. J. Iguaz,
J. Kroll,
C. Nellist,
F. Ravotti,
E. Rossi,
A. Rummler,
F. Salvatore,
S. Spannagel,
M. Weers,
J. Weingarten
Abstract:
On January 17th 2018, a forum on a possible Joint Research Activity on a future common Beam Telescope was held during the 6th Beam Telescopes and Test Beams Workshop (BTTB) in Zurich, Switzerland. The BTTB workshop aims at bringing together the community involved in beam tests. It therefore offers a suitable platform to induce community-wide discussions. The forum and its discussions were well rec…
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On January 17th 2018, a forum on a possible Joint Research Activity on a future common Beam Telescope was held during the 6th Beam Telescopes and Test Beams Workshop (BTTB) in Zurich, Switzerland. The BTTB workshop aims at bringing together the community involved in beam tests. It therefore offers a suitable platform to induce community-wide discussions. The forum and its discussions were well received and the participants concluded that appropriate actions should be undertaken promptly. Specific hardware and software proposals were discussed, with an emphasis on improving current common EUDET-type telescopes based on Mimosa26 sensors towards higher trigger rate capabilities in convolution with considerably improved time resolution. EUDAQ as a common top level DAQ and its modular structure is ready for future hardware. EUTelescope fulfils many requirements of a common reconstruction framework, but has also various drawbacks. Thus, requirements for a new common reconstruction framework were collected. A new common beam telescope evolves with the sensor decision and the whole package including a reconstruction framework depends on that decision.
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Submitted 8 January, 2019; v1 submitted 24 May, 2018;
originally announced May 2018.
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Silicon Technologies for the CLIC Vertex Detector
Authors:
Simon Spannagel
Abstract:
CLIC is a proposed linear e+e- collider designed to provide particle collisions at center-of-mass energies of up to 3 TeV. Precise measurements of the properties of the top quark and the Higgs boson, as well as searches for Beyond the Standard Model physics require a highly performant CLIC detector. In particular the vertex detector must provide a single point resolution of only a few micrometers…
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CLIC is a proposed linear e+e- collider designed to provide particle collisions at center-of-mass energies of up to 3 TeV. Precise measurements of the properties of the top quark and the Higgs boson, as well as searches for Beyond the Standard Model physics require a highly performant CLIC detector. In particular the vertex detector must provide a single point resolution of only a few micrometers while not exceeding the envisaged material budget of around 0.2% X0 per layer. Beam-beam interactions and beamstrahlung processes impose an additional requirement on the timestamping capabilities of the vertex detector of about 10 ns. These goals can only be met by using novel techniques in the sensor and ASIC design as well as in the detector construction.
The R\&D program for the CLIC vertex detector explores various technologies in order to meet these demands. The feasibility of planar sensors with a thickness of 50-150 um, including different active edge designs, are evaluated using Timepix3 ASICs. First prototypes of the CLICpix readout ASIC, implemented in 65 nm CMOS technology and with a pixel size of 25x25 um^2, have been produced and tested in particle beams. An updated version of the ASIC with a larger pixel matrix and improved precision of the time-over-threshold and time-of-arrival measurements has been submitted. Different hybridization concepts have been developed for the interconnection between the sensor and readout ASIC, ranging from small-pitch bump bonding of planar sensors to capacitive coupling of active HV-CMOS sensors. Detector simulations based on Geant4 and TCAD are compared with experimental results to assess and optimize the performance of the various designs.
This contribution gives an overview of the R&D program undertaken for the CLIC vertex detector and presents performance measurements of the prototype detectors currently under investigation.
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Submitted 1 June, 2017;
originally announced June 2017.
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Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector
Authors:
M. Dragicevic,
M. Friedl,
J. Hrubec,
H. Steininger,
A. Gädda,
J. Härkönen,
T. Lampén,
P. Luukka,
T. Peltola,
E. Tuominen,
E. Tuovinen,
A. Winkler,
P. Eerola,
T. Tuuva,
G. Baulieu,
G. Boudoul,
L. Caponetto,
C. Combaret,
D. Contardo,
T. Dupasquier,
G. Gallbit,
N. Lumb,
L. Mirabito,
S. Perries,
M. Vander Donckt
, et al. (462 additional authors not shown)
Abstract:
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator…
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A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
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Submitted 1 June, 2017;
originally announced June 2017.
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Performance of the EUDET-type beam telescopes
Authors:
H. Jansen,
S. Spannagel,
J. Behr,
A. Bulgheroni,
G. Claus,
E. Corrin,
D. G. Cussans,
J. Dreyling-Eschweiler,
D. Eckstein,
T. Eichhorn,
M. Goffe,
I. M. Gregor,
D. Haas,
C. Muhl,
H. Perrey,
R. Peschke,
P. Roloff,
I. Rubinskiy,
M. Winter
Abstract:
Test beam measurements at the test beam facilities of DESY have been conducted to characterise the performance of the EUDET-type beam telescopes originally developed within the EUDET project. The beam telescopes are equipped with six sensor planes using MIMOSA26 monolithic active pixel devices. A programmable Trigger Logic Unit provides trigger logic and time stamp information on particle passage.…
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Test beam measurements at the test beam facilities of DESY have been conducted to characterise the performance of the EUDET-type beam telescopes originally developed within the EUDET project. The beam telescopes are equipped with six sensor planes using MIMOSA26 monolithic active pixel devices. A programmable Trigger Logic Unit provides trigger logic and time stamp information on particle passage. Both data acquisition framework and offline reconstruction software packages are available. User devices are easily integrable into the data acquisition framework via predefined interfaces.
The biased residual distribution is studied as a function of the beam energy, plane spacing and sensor threshold. Its standard deviation at the two centre pixel planes using all six planes for tracking in a 6\,GeV electron/positron-beam is measured to be $(2.88\,\pm\,0.08)\,\upmu\meter$.Iterative track fits using the formalism of General Broken Lines are performed to estimate the intrinsic resolution of the individual pixel planes. The mean intrinsic resolution over the six sensors used is found to be $(3.24\,\pm\,0.09)\,\upmu\meter$.With a 5\,GeV electron/positron beam, the track resolution halfway between the two inner pixel planes using an equidistant plane spacing of 20\,mm is estimated to $(1.83\,\pm\,0.03)\,\upmu\meter$ assuming the measured intrinsic resolution. Towards lower beam energies the track resolution deteriorates due to increasing multiple scattering. Threshold studies show an optimal working point of the MIMOSA26 sensors at a sensor threshold of between five and six times their RMS noise. Measurements at different plane spacings are used to calibrate the amount of multiple scattering in the material traversed and allow for corrections to the predicted angular scattering for electron beams.
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Submitted 10 May, 2016; v1 submitted 31 March, 2016;
originally announced March 2016.
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Status of the CMS Phase I Pixel Detector Upgrade
Authors:
Simon Spannagel
Abstract:
A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-t…
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A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-threshold comparator. These improvements allow the new pixel detector to sustain and improve the efficiency of the current pixel tracker at the increased requirements imposed by high luminosities and pile-up. This contribution gives an overview of the design of the upgraded pixel detector and the status of the upgrade project, and presents test beam performance measurements of the production read-out chip.
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Submitted 22 December, 2016; v1 submitted 19 November, 2015;
originally announced November 2015.
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Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
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Test Beam Campaigns for the CMS Phase I Upgrade Pixel Readout Chip
Authors:
Simon Spannagel
Abstract:
The current CMS silicon pixel detector as the innermost component of the CMS experiment is performing well at LHC design luminosity, but would be subject to severe inefficiencies at LHC peak luminosities of 2x10e34 cm^-2 s^-1.
Therefore, an upgrade of the CMS pixel detector is planned, including a new readout chip. The chip design comprises additional on-chip buffer cells as well as high-speed d…
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The current CMS silicon pixel detector as the innermost component of the CMS experiment is performing well at LHC design luminosity, but would be subject to severe inefficiencies at LHC peak luminosities of 2x10e34 cm^-2 s^-1.
Therefore, an upgrade of the CMS pixel detector is planned, including a new readout chip. The chip design comprises additional on-chip buffer cells as well as high-speed data links and low-threshold comparators in the pixel cells. With these changes the upgraded pixel detector will be able to maintain or even improve the efficiency of the current detector at the increased requirements imposed by high luminosities and pile-up.
The effects of these design changes on e.g. position resolution and charge collection efficiency were studied in detail using a precision tracking telescope at the DESY test beam facilities. The high telescope track resolution enables precise studies of tracking efficiency, charge sharing and collection even within single pixel cells of the device under test.
This publication focuses on the improved performance and capabilities of the new pixel readout chip and summarizes results from test beam campaigns with both unirradiated and irradiated devices. The functionality of the chip design with its improved charge threshold, redesigned data transmission and buffering scheme has been verified.
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Submitted 2 October, 2014;
originally announced October 2014.