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Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators
Authors:
J. Verjauw,
A. Potočnik,
M. Mongillo,
R. Acharya,
F. Mohiyaddin,
G. Simion,
A. Pacco,
Ts. Ivanov,
D. Wan,
A. Vanleenhove,
L. Souriau,
J. Jussot,
A. Thiam,
J. Swerts,
X. Piao,
S. Couet,
M. Heyns,
B. Govoreanu,
I. Radu
Abstract:
The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate…
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The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate the reappearance of microwave losses introduced by surface oxides that grow after exposure to the ambient environment. We find that losses in quantum devices are reduced by an order of magnitude, with internal Q-factors reaching up to 7 $\cdot$ 10$^6$ in the single photon regime, when devices are exposed to ambient conditions for 16 min. Furthermore, we observe that Nb2O5 is the only surface oxide that grows significantly within the first 200 hours, following the extended Cabrera-Mott growth model. In this time, microwave losses scale linearly with the Nb$_2$O$_5$ thickness, with an extracted loss tangent tan$δ$ = 9.9 $\cdot$ 10$^{-3}$. Our findings are of particular interest for devices spanning from superconducting qubits, quantum-limited amplifiers, microwave kinetic inductance detectors to single photon detectors.
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Submitted 22 December, 2020; v1 submitted 19 December, 2020;
originally announced December 2020.
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Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
Authors:
K. Garello,
F. Yasin,
H. Hody,
S. Couet,
L. Souriau,
S. H. Sharifi,
J. Swerts,
R. Carpenter,
S. Rao,
W. Kim,
J. Wu,
K. K. V. Sethu,
M. Pak,
N. Jossart,
D. Crotti,
A. Furnémont,
G. S. Kar
Abstract:
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our con…
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We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.
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Submitted 30 August, 2019; v1 submitted 18 July, 2019;
originally announced July 2019.
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SOT-MRAM 300mm integration for low power and ultrafast embedded memories
Authors:
K. Garello,
F. Yasin,
S. Couet,
L. Souriau,
J. Swerts,
S. Rao,
S. Van Beek,
W. Kim,
E. Liu,
S. Kundu,
D. Tsvetanova,
N. Jossart,
K. Croes,
E. Grimaldi,
M. Baumgartner,
D. Crotti,
A. Furnémont,
P. Gambardella,
G. S. Kar
Abstract:
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.
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Submitted 22 October, 2018;
originally announced October 2018.
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Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices
Authors:
Danny Wan,
Mauricio Manfrini,
Adrien Vaysset,
Laurent Souriau,
Lennaert Wouters,
Arame Thiam,
Eline Raymenants,
Safak Sayan,
Julien Jussot,
Johan Swerts,
Sebastien Couet,
Nouredine Rassoul,
Khashayar Babaei Gavan,
Kristof Paredis,
Cedric Huyghebaert,
Monique Ercken,
Christopher J. Wilson,
Dan Mocuta,
Iuliana P. Radu
Abstract:
Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant st…
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Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step toward the realization of a majority gate, even though further downscaling may be required. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications
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Submitted 28 November, 2017; v1 submitted 9 November, 2017;
originally announced November 2017.
