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Photonics in Flatland: Challenges and Opportunities for Nanophotonics with 2D Semiconductors
Authors:
Ali Azimi,
Julien Barrier,
Angela Barreda,
Thomas Bauer,
Farzaneh Bouzari,
Abel Brokkelkamp,
Francesco Buatier de Mongeot,
Timothy Parsons,
Peter Christianen,
Sonia Conesa-Boj,
Alberto G. Curto,
Suprova Das,
Bernardo Dias,
Itai Epstein,
Zlata Fedorova,
F. Javier García de Abajo,
Ilya Goykhman,
Lara Greten,
Johanna Grönqvist,
Ludovica Guarneri,
Yujie Guo,
Tom Hoekstra,
Xuerong Hu,
Benjamin Laudert,
Jason Lynch
, et al. (23 additional authors not shown)
Abstract:
Two-dimensional (2D) semiconductors are emerging as a versatile platform for nanophotonics, offering unprecedented tunability in optical properties through exciton resonance engineering, van der Waals heterostructuring, and external field control. These materials enable active optical modulation, single-photon emission, quantum photonics, and valleytronic functionalities, paving the way for next-g…
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Two-dimensional (2D) semiconductors are emerging as a versatile platform for nanophotonics, offering unprecedented tunability in optical properties through exciton resonance engineering, van der Waals heterostructuring, and external field control. These materials enable active optical modulation, single-photon emission, quantum photonics, and valleytronic functionalities, paving the way for next-generation optoelectronic and quantum photonic devices. However, key challenges remain in achieving large-area integration, maintaining excitonic coherence, and optimizing amplitude-phase modulation for efficient light manipulation. Advances in fabrication, strain engineering, and computational modelling will be crucial to overcoming these limitations. This perspective highlights recent progress in 2D semiconductor-based nanophotonics, emphasizing opportunities for scalable integration into photonics.
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Submitted 30 June, 2025;
originally announced July 2025.
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Efficient optomechanical mode-shape mapping of micromechanical devices
Authors:
David Hoch,
Kevin-Jeremy Haas,
Leopold Moller,
Timo Sommer,
Pedro Soubelet,
Jonathan Finley,
Menno Poot
Abstract:
We demonstrate a method to optically map multiple modes of mechanical structures simultaneously. The fast and robust method, based on a modified phase-lock-loop, is demonstrated on a silicon nitride membrane and compared with three different approaches. Line traces and two-dimensional maps of different modes are acquired. The high quality enables us to determine the weights of individual contribut…
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We demonstrate a method to optically map multiple modes of mechanical structures simultaneously. The fast and robust method, based on a modified phase-lock-loop, is demonstrated on a silicon nitride membrane and compared with three different approaches. Line traces and two-dimensional maps of different modes are acquired. The high quality enables us to determine the weights of individual contributions in superpositions of degenerate modes.
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Submitted 6 May, 2021;
originally announced May 2021.
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Optoelectronic forces with quantum wells for cavity optomechanics in GaAs/AlAs semiconductor microcavities
Authors:
V. Villafañe,
P. Sesin,
P. Soubelet,
S. Anguiano,
A. E. Bruchhausen,
G. Rozas,
C. Gomez Carbonell,
A. Lemaître,
A. Fainstein
Abstract:
Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, non-linearities and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation…
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Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, non-linearities and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation and deformation potential interaction are the strongest mechanism of light-to-sound transduction in semiconductor GaAs/AlAs distributed Bragg reflector optomechanical resonators. We demonstrate that the ultrafast spatial redistribution of the photoexcited carriers in microcavities with massive GaAs spacers leads to an enhanced coupling to the fundamental 20 GHz vertically polarized mechanical breathing mode. The carrier diffusion along the growth axis of the device can be enhanced by increasing the laser power, or limited by embedding GaAs quantum wells in the cavity spacer, a strategy used here to prove and engineer the optoelectronic forces in phonon generation with real carriers. The wavelength dependence of the observed phenomena provide further proof of the role of optoelectronic forces. The optical forces associated to the different intervening mechanisms and their relevance for dynamical backaction in optomechanics are evaluated using finite-element methods. The results presented open the path to the study of hitherto seldom investigated dynamical backaction in optomechanical solid-state resonators in the presence of optoelectronic forces.
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Submitted 23 March, 2018; v1 submitted 26 September, 2017;
originally announced September 2017.
