Sensing Strain-induced Symmetry Breaking by Reflectance Anisotropy Spectroscopy
Authors:
M. Volpi,
S. Beck,
A. Hampel,
H. Galinski,
A. Sologubenko,
R. Spolenak
Abstract:
Intentional breaking of the lattice symmetry in solids is a key concept to alter the properties of materials by modifying their electronic band structure. However, the correlation of strain-induced effects and breaking of the lattice symmetry is often indirect, resorting to vibrational spectroscopic techniques such as Raman scattering. Here, we demonstrate that reflectance anisotropy spectroscopy…
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Intentional breaking of the lattice symmetry in solids is a key concept to alter the properties of materials by modifying their electronic band structure. However, the correlation of strain-induced effects and breaking of the lattice symmetry is often indirect, resorting to vibrational spectroscopic techniques such as Raman scattering. Here, we demonstrate that reflectance anisotropy spectroscopy (RAS), which directly depends on the complex dielectric function, enables the direct observation of electronic band structure modulation. Studying the strain-induced symmetry breaking in copper, we show how uniaxial strain lifts the degeneracy of states in the proximity of the both L and X symmetry points, thus altering the matrix element for interband optical transitions, directly observable in RAS. We corroborate our experimental results by analysing the strain-induced changes in the electronic structure based on ab-initio density functional theory calculations. The versatility to study breaking of the lattice symmetry by simple reflectance measurements opens up the possibility to gain a direct insight on the band-structure of other strain-engineered materials, such as graphene and two-dimensional (2D) transition metal dichalcogenides (TMDCs).
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Submitted 31 May, 2021; v1 submitted 9 May, 2021;
originally announced May 2021.
Disordered Zero-Index Metamaterials Based On Metal Induced Crystallization
Authors:
Henning Galinski,
Andreas Wyss,
Mattia Seregni,
Huan Ma,
Volker Schnabel,
Alla Sologubenko,
Ralph Spolenak
Abstract:
Zero-index (ZI) materials are synthetic optical materials with vanishing effective permittivity and/or permeability at a given design frequency. Recently, it has been shown that the permeability of a zero-index host material can be deterministically tuned by adding photonic dopants. Here, we apply metal-induced crystallization (MIC) in quasi-random metal-semiconductor composites to fabricate large…
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Zero-index (ZI) materials are synthetic optical materials with vanishing effective permittivity and/or permeability at a given design frequency. Recently, it has been shown that the permeability of a zero-index host material can be deterministically tuned by adding photonic dopants. Here, we apply metal-induced crystallization (MIC) in quasi-random metal-semiconductor composites to fabricate large-area zero-index materials. Using Ag-Si as a model systems, we demonstrate that the localized crystallization of the semiconductor at the metal/semiconductor interface can be used as design parameter to control light interaction in such a disordered system. The induced crystallization generates new zero-index states corresponding to a hybridized plasmonic mode emerging from selective coupling of light to the ångström-sized crystalline shell of the semiconductor. Photonic doping can be used to enhance the transmission in these disordered metamaterials as is shown by simulation. Our results break ground for novel large-area zero-index materials for wafer scale applications and beyond.
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Submitted 29 January, 2019;
originally announced January 2019.
