Showing 1–44 of 44 results for author: Snoeys, W

X-ray Irradiation Studies on the Monopix DMAPS in 150$\,$nm and 180$\,$nm

Authors: Christian Bespin, Marlon Barbero, Pierre Barrillon, Patrick Breugnon, Ivan Caicedo, Yavuz Degerli, Jochen Dingfelder, Tomasz Hemperek, Toko Hirono, Hans Krüger, Fabian Hügging, Konstantinos Moustakas, Patrick Pangaud, Heinz Pernegger, Petra Riedler, Piotr Rymaszewski, Lars Schall, Philippe Schwemling, Walter Snoeys, Tianyang Wang, Norbert Wermes, Sinou Zhang

Abstract: Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. TJ-Monopix2 and LF-Monopix2 are the most recent large-scale chips in their respective development line, aimi… ▽ More Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. TJ-Monopix2 and LF-Monopix2 are the most recent large-scale chips in their respective development line, aiming for the ATLAS Inner Tracker outer layer requirements. Those include a tolerance to ionizing radiation of up to 100$\,$Mrad. It was evaluated by irradiating both devices with X-rays to the corresponding ionization dose, showing no significant degradation of the performance at 100$\,$Mrad and continuous operability throughout the irradiation campaign. △ Less

Submitted 5 June, 2025; originally announced June 2025.

Comments: 10 pages, 7 figures. Proceedings of the 17th Vienna Conference on Instrumentation

Further Characterisation of Digital Pixel Test Structures Implemented in a 65 nm CMOS Process

Authors: Gianluca Aglieri Rinella, Nicole Apadula, Anton Andronic, Matias Antonelli, Mauro Aresti, Roberto Baccomi, Pascal Becht, Stefania Beole, Marcello Borri, Justus Braach, Matthew Daniel Buckland, Eric Buschmann, Paolo Camerini, Francesca Carnesecchi, Leonardo Cecconi, Edoardo Charbon, Giacomo Contin, Dominik Dannheim, Joao de Melo, Wenjing Deng, Antonello di Mauro, Jan Hasenbichler, Hartmut Hillemanns, Geun Hee Hong, Artem Isakov , et al. (33 additional authors not shown)

Abstract: The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption of 40 mW/cm$^{2}$ by implementing wafer-scale MAPS bent into cylindrical half layers. To address these challenging requirements, the ALICE ITS3 project, in conj… ▽ More The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption of 40 mW/cm$^{2}$ by implementing wafer-scale MAPS bent into cylindrical half layers. To address these challenging requirements, the ALICE ITS3 project, in conjunction with the CERN EP R&D on monolithic pixel sensors, proposed the Tower Partners Semiconductor Co. 65 nm CMOS process as the starting point for the sensor. After the initial results confirmed the detection efficiency and radiation hardness, the choice of the technology was solidified by demonstrating the feasibility of operating MAPS in low-power consumption regimes, < 50 mW/cm$^{2}$, while maintaining high-quality performance. This was shown through a detailed characterisation of the Digital Pixel Test Structure (DPTS) prototype exposed to X-rays and ionising beams, and the results are presented in this article. Additionally, the sensor was further investigated through studies of the fake-hit rate, the linearity of the front-end in the range 1.7-28 keV, the performance after ionising irradiation, and the detection efficiency of inclined tracks in the range 0-45$^\circ$. △ Less

Submitted 9 May, 2025; originally announced May 2025.

Exploring unique design features of the Monolithic Stitched Sensor with Timing (MOST): yield, powering, timing, and sensor reverse bias

Authors: Mariia Selina, R. Barthel, S. Bugiel, L. Cecconi, J. De Melo, M. Fransen, A. Grelli, I. Hobus, A. Isakov, A. Junique, P. Leitao, M. Mager, Y. Otarid, F. Piro, M. J. Rossewij, S. Solokhin, J. Sonneveld, W. Snoeys, N. Tiltmann, A. Vitkovskiy, H. Wennloef

Abstract: Monolithic stitched CMOS sensors are explored for the upgrade of Inner Tracking System of the ALICE experiment (ITS3) and the R&D of the CERN Experimental Physics Department. To learn about stitching, two 26 cm long stitched sensors, the Monolithic Stitched Sensor (MOSS), and the Monolithic Stitched Sensor with Timing (MOST), were implemented in the Engineering Round 1 (ER1) in the TPSCo 65nm ISC… ▽ More Monolithic stitched CMOS sensors are explored for the upgrade of Inner Tracking System of the ALICE experiment (ITS3) and the R&D of the CERN Experimental Physics Department. To learn about stitching, two 26 cm long stitched sensors, the Monolithic Stitched Sensor (MOSS), and the Monolithic Stitched Sensor with Timing (MOST), were implemented in the Engineering Round 1 (ER1) in the TPSCo 65nm ISC technology. Contrary to the MOSS, powered by 20 distinct power domains accessible from separate pads, the MOST has one global analog and digital power domain to or from which small fractions of the matrix can be connected or disconnected by conservatively designed power switches to prevent shorts or defects from affecting the full chip. Instead of the synchronous readout in the MOSS, the MOST immediately transfers hit information upon a hit, preserving timing information. The sensor reverse bias is also applied through the bias of the front-end rather than by a reverse substrate bias. This paper presents the first characterization results of the MOST, with the focus on its specific characteristics, including yield analysis, precise timing measurements, and the potential of its alternative biasing approach for improved sensor performance. △ Less

Submitted 18 April, 2025; originally announced April 2025.

Comments: 7 pages proceeding for PIXEL24 workshop

Impact of the circuit layout on the charge collection in a monolithic pixel sensor

Authors: Corentin Lemoine, Rafael Ballabriga, Eric Buschmann, Michael Campbell, Raimon Casanova Mohr, Dominik Dannheim, Jona Dilg, Ana Dorda, Finn King, Ono Feyens, Philipp Gadow, Ingrid-Maria Gregor, Karsten Hansen, Yajun He, Lennart Huth, Iraklis Kremastiotis, Stefano Maffessanti, Larissa Mendes, Younes Otarid, Christian Reckleben, Sébastien Rettie, Manuel Alejandro del Rio Viera, Sara Ruiz Daza, Judith Schlaadt, Adriana Simancas , et al. (6 additional authors not shown)

Abstract: CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a n… ▽ More CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a new test-chip produced in the same process but with a larger pixel pitch than previous prototypes, exhibits an unexpected asymmetric efficiency pattern. This contribution describes a simulation procedure combining TCAD, Monte Carlo and circuit simulations to model and understand this effect. It proved able to reproduce measurement results and attribute the asymmetric efficiency drop to a slow charge collection due to low amplitude potential wells created by the circuitry layout and impacting efficiency via ballistic deficit. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Comments: Presented at the Eleventh International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (Nov 18-22 2024, Strasbourg, France). Submitted to JINST

Study of MALTA2, a Depleted Monolithic Active Pixel Sensor, with grazing angles at CERN SPS 180 GeV/c hadron beam

Authors: L. Li, P. Allport, I. Asensi Tortajada, P. Behera, D. V. Berlea, D. Bortoletto, C. Buttar, V. Dao, G. Dash, L. Fasselt, L. Flores Sanz de Acedo, M. Gazi, L. Gonella, V. Gonzalez, G. Gustavino, S. Haberl, T. Inada, P. Jana, H. Pernegger, P. Riedler, W. Snoeys, C. A Solans Sanchez, M. van Rijnbach, M. Vazquez Nunez, A. Vijay , et al. (2 additional authors not shown)

Abstract: MALTA2 is a Depleted Monolithic Active Pixel Sensor designed to meet the challenging requirements of future collider experiments, in particularly extreme radiation tolerance and high hit rate. The sensor is fabricated in a modified Tower 180 nm CMOS imaging technology to mitigate performance degradation caused by 100 MRad of Total Ionising Dose and greater than 10^{15} 1 MeV n_{eq}/cm^2 of Non-Ion… ▽ More MALTA2 is a Depleted Monolithic Active Pixel Sensor designed to meet the challenging requirements of future collider experiments, in particularly extreme radiation tolerance and high hit rate. The sensor is fabricated in a modified Tower 180 nm CMOS imaging technology to mitigate performance degradation caused by 100 MRad of Total Ionising Dose and greater than 10^{15} 1 MeV n_{eq}/cm^2 of Non-Ionising Energy Loss. MALTA2 samples have been tested during the CERN SPS test beam campaign in 2023-2024, before and after irradiation at a fluence of 1 $\times$ 10^{15} 1 MeV n_{eq}/cm^2. The sensors were positioned at various inclinations relative to the beam, covering grazing angles from 0 to 60 degrees. This contribution presents measurements of detection efficiency and cluster size as functions of these angles, along with an estimation of the active depth of the depleted region based on the test beam results. △ Less

Submitted 19 February, 2025; originally announced February 2025.

Comments: 5 pages, 3 figures, 11th PIXEL International Workshop on Semiconductor Pixel Detectors for Particles and Imaging

Timing characterization of MALTA and MALTA2 pixel detectors using Micro X-ray source

Authors: G. Dash, P. Allport, I. Asensi Tortajada, P. Behera, D. V. Berlea, D. Bortoletto, C. Buttar, V. Dao, L. Fasselt, L. Flores Sanz de Acedo, M. Gazi, L. Gonella, V. Gonzalez, G. Gustavino, S. Haberl, T. Inada, P. Jana, L. Li, H. Pernegger, P. Riedler, W. Snoeys, C. A Solans Sanchez, M. van Rijnbach, M. Vazquez Nunez, A. Vijay , et al. (2 additional authors not shown)

Abstract: The MALTA monolithic active pixel detector is developed to address the challenges anticipated in future high-energy physics detectors. As part of its characterization, we conducted fast-timing studies necessary to provide a figure of merit for this family of monolithic pixel detectors. MALTA has a metal layer in front-end electronics, and the conventional laser technique is not suitable for fast t… ▽ More The MALTA monolithic active pixel detector is developed to address the challenges anticipated in future high-energy physics detectors. As part of its characterization, we conducted fast-timing studies necessary to provide a figure of merit for this family of monolithic pixel detectors. MALTA has a metal layer in front-end electronics, and the conventional laser technique is not suitable for fast timing studies due to the reflection of the laser from the metallic surface. X-rays have been employed as a more effective alternative for penetration through these layers. The triggered X-ray set-up is designed to study timing measurements of monolithic detectors. The timing response of the X-ray set-up is characterized using an LGAD. The timing response of the MALTA and MALTA2 pixel detectors is studied, and the best response time of MALTA2 pixel detectors is measured at about 2 ns. △ Less

Submitted 18 February, 2025; originally announced February 2025.

Comments: 13 pages, 11 figures, To be submitted to JINST

ACM Class: J.2

Transient studies using a TCAD and Allpix Squared combination approach

Authors: Manuel A. Del Rio Viera, Eric Buschmann, Ankur Chauhan, Dominik Dannheim, Katharina Dort, Doris Eckstein, Finn Feindt, Ingrid-Maria Gregor, Karsten Hansen, Yajun He, Lennart Huth, Larissa Mendes, Budi Mulyanto, Daniil Rastorguev, Christian Reckleben, Sara Ruiz Daza, Judith Schlaadt, Paul Schütze, Adriana Simancas, Walter Snoeys, Simon Spannagel, Marcel Stanitzki, Anastasiia Velyka, Gianpiero Vignola, Håkan Wennlöf

Abstract: The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the s… ▽ More The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the sensing element and thus the overall performance of the pixel detector. The response of the sensors can then be tested in laboratory and test beam facilities and compared to simulation results. Transient simulations allow for studying the response of the sensor as a function of time, such as the signal produced after a charged particle passes through the sensor. The study of these signals is important to understand the magnitude and timing of the response from the sensors and improve upon them. While TCAD simulations are accurate, the time required to produce a single pulse is large compared to a combination of MC and TCAD simulations. In this work, a validation of the transient simulation approach and studies on charge collection are presented. △ Less

Submitted 10 February, 2025; originally announced February 2025.

Comments: TIPP 2023 Proceedings

The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology

Authors: Sara Ruiz Daza, Rafael Ballabriga, Eric Buschmann, Michael Campbell, Raimon Casanova Mohr, Dominik Dannheim, Jona Dilg, Ana Dorda, Finn King, Ono Feyens, Philipp Gadow, Ingrid-Maria Gregor, Karsten Hansen, Yajun He, Lennart Huth, Iraklis Kremastiotis, Corentin Lemoine, Stefano Maffessanti, Larissa Mendes, Younes Otarid, Christian Reckleben, Sébastien Rettie, Manuel Alejandro del Rio Viera, Judith Schlaadt, Adriana Simancas , et al. (6 additional authors not shown)

Abstract: The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflo… ▽ More The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflow and ports a hybrid pixel-detector architecture, with digital pulse processing in each pixel, into a monolithic chip. The chip matrix consists of 64$\times$16 square pixels with a size of 35$\times$35 um2, and a total active area of approximately 1.25 um2. The chip has been successfully integrated into the Caribou DAQ system. It is fully functional, and the measured threshold dispersion and noise agree with the expectation from front-end simulations. However, a non-uniform in-pixel response related to the size and location of the n-wells in the analog circuitry has been observed in test beam measurements and will be discussed in this contribution. This asymmetry in the pixel response, enhanced by the 35 um pixel pitch - larger than in other prototypes - and certain features of the readout circuit, has not been observed in prototypes with smaller pixel pitches in this technology. △ Less

Submitted 15 May, 2025; v1 submitted 10 February, 2025; originally announced February 2025.

Performance studies of the CE-65v2 MAPS prototype structure

Authors: A. Ilg, A. Lorenzetti, H. Baba, J. Baudot, A. Besson, S. Bugiel, T. Chujo, C. Colledani, A. Dorokhov, Z. El Bitar, M. Goffe, T. Gunji, C. Hu-Guo, K. Jaaskelainen, T. Katsuno, A. Kluge, A. Kostina, A. Kumar, A. Macchiolo, M. Mager, J. Park, E. Ploerer, S. Sakai, S. Senyukov, H. Shamas , et al. (8 additional authors not shown)

Abstract: With the next upgrade of the ALICE inner tracking system (ITS3) as its primary focus, a set of small MAPS test structures have been developed in the 65 nm TPSCo CMOS process. The CE-65 focuses on the characterisation of the analogue charge collection properties of this technology. The latest iteration, the CE-65v2, was produced in different processes (standard, with a low-dose n-type blanket, and… ▽ More With the next upgrade of the ALICE inner tracking system (ITS3) as its primary focus, a set of small MAPS test structures have been developed in the 65 nm TPSCo CMOS process. The CE-65 focuses on the characterisation of the analogue charge collection properties of this technology. The latest iteration, the CE-65v2, was produced in different processes (standard, with a low-dose n-type blanket, and blanket with gap between pixels), pixel pitches (15, 18, 22.5 $μ$m), and pixel arrangements (square or staggered). The comparatively large pixel array size of $48\times24$ pixels in CE-65v2 allows the uniformity of the pixel response to be studied, among other benefits. The CE-65v2 chip was characterised in a test beam at the CERN SPS. A first analysis showed that hit efficiencies of $\geq 99\%$ and spatial resolution better than 5 $μ$m can be achieved for all pitches and process variants. For the standard process, thanks to larger charge sharing, even spatial resolutions below 3 $μ$m are reached, in line with vertex detector requirements for the FCC-ee. This contribution further investigates the data collected at the SPS test beam. Thanks to the large sensor size and efficient data collection, a large amount of statistics was collected, which allows for detailed in-pixel studies to see the efficiency and spatial resolution as a function of the hit position within the pixels. Again, different pitches and process variants are compared. △ Less

Submitted 24 February, 2025; v1 submitted 6 February, 2025; originally announced February 2025.

Comments: 6 pages, 3 figures, 1 table, Pixel 2024 conference proceeding

Journal ref: 2025 JINST 20 C03033

Charge calibration of MALTA2, a radiation hard depleted monolithic active pixel sensor

Authors: Lucian Fasselt, Ignacio Asensi Tortajada, Prafulla Behera, Dumitru Vlad Berlea, Daniela Bortoletto, Craig Buttar, Valerio Dao, Ganapati Dash, Leyre Flores Sanz de Acedo, Martin Gazi, Laura Gonella, Vicente González, Sebastian Haberl, Tomohiro Inada, Pranati Jana, Long Li, Heinz Pernegger, Petra Riedler, Walter Snoeys, Carlos Solans Sánchez, Milou van Rijnbach, Marcos Vázquez Núñez, Anusree Vijay, Julian Weick, Steven Worm

Abstract: MALTA2 is a depleted monolithic active pixel sensor (DMAPS) designed for tracking at high rates and typically low detection threshold of $\sim150\,\mathrm{e^-}$. A precise knowledge of the threshold is crucial to understanding the charge collection in the pixel and specifying the environment for sensor application. A simple procedure is developed to calibrate the threshold to unit electrons making… ▽ More MALTA2 is a depleted monolithic active pixel sensor (DMAPS) designed for tracking at high rates and typically low detection threshold of $\sim150\,\mathrm{e^-}$. A precise knowledge of the threshold is crucial to understanding the charge collection in the pixel and specifying the environment for sensor application. A simple procedure is developed to calibrate the threshold to unit electrons making use of a dedicated charge injection circuit and an Fe-55 source with dominant charge deposition of $1600\, \mathrm{e^-}$. The injection voltage is determined which corresponds to the injection under Fe-55 exposure and is the basis for charge calibration. The charge injection circuit incorporates a capacitance with design value of $\mathrm{C_{inj}}=$ 230 aF. Experimentally, the average capacitance value for non-irradiated samples is found to be $\mathrm{C_{inj,exp}}=$ 257 aF. The 12 % divergence motivates the need for the presented precise calibration procedure, which is proposed to be performed for each MALTA2 sensor. △ Less

Submitted 23 January, 2025; originally announced January 2025.

Characterisation of analogue MAPS produced in the 65 nm TPSCo process

Authors: Eduardo Ploerer, Hitoshi Baba, Jerome Baudot, Auguste Besson, Szymon Bugiel, Tatsuya Chujo, Claude Colledani, Andrei Dorokhov, Ziad El Bitar, Mathieu Goffe, Taku Gunji, Christine Hu-Guo, Armin Ilg, Kimmo Jaaskelainen, Towa Katsuno, Alexander Kluge, Anhelina Kostina, Ajit Kumar, Alessandra Lorenzetti, Anna Macchiolo, Magnus Mager, Jonghan Park, Shingo Sakai, Serhiy Senyukov, Hasan Shamas , et al. (9 additional authors not shown)

Abstract: Within the context of the ALICE ITS3 collaboration, a set of MAPS small-scale test structures were developed using the 65 nm TPSCo CMOS imaging process with the upgrade of the ALICE inner tracking system as its primary focus. One such sensor, the Circuit Exploratoire 65 nm (CE-65), and its evolution the CE-65v2, were developed to explore charge collection properties for varying configurations incl… ▽ More Within the context of the ALICE ITS3 collaboration, a set of MAPS small-scale test structures were developed using the 65 nm TPSCo CMOS imaging process with the upgrade of the ALICE inner tracking system as its primary focus. One such sensor, the Circuit Exploratoire 65 nm (CE-65), and its evolution the CE-65v2, were developed to explore charge collection properties for varying configurations including collection layer process (standard, blanket, modified with gap), pixel pitch (15, 18, \SI{22.5}{\micro\meter}), and pixel geometry (square vs hexagonal/staggered). In this work the characterisation of the CE-65v2 chip, based on $^{55}$Fe lab measurements and test beams at CERN SPS, is presented. Matrix gain uniformity up to the $\mathcal{O}$(5\%) level was demonstrated for all considered chip configurations. The CE-65v2 chip achieves a spatial resolution of under \SI{2}{\micro\meter} during beam tests. Process modifications allowing for faster charge collection and less charge sharing result in decreased spatial resolution, but a considerably wider range of operation, with both the \SI{15}{\micro\meter} and \SI{22.5}{\micro\meter} chips achieving over 99\% efficiency up to a $\sim$180 e$^{-}$ seed threshold. The results serve to validate the 65 nm TPSCo CMOS process, as well as to motivate design choices in future particle detection experiments. △ Less

Submitted 13 November, 2024; originally announced November 2024.

Comments: 7 pages, 12 figures; Proceedings for iWoRiD 2024 (Lisbon)

Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles

Authors: Håkan Wennlöf, Dominik Dannheim, Manuel Del Rio Viera, Katharina Dort, Doris Eckstein, Finn Feindt, Ingrid-Maria Gregor, Lennart Huth, Stephan Lachnit, Larissa Mendes, Daniil Rastorguev, Sara Ruiz Daza, Paul Schütze, Adriana Simancas, Walter Snoeys, Simon Spannagel, Marcel Stanitzki, Alessandra Tomal, Anastasiia Velyka, Gianpiero Vignola

Abstract: The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an e… ▽ More The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an example. The full simulation workflow is described, along with possible pitfalls and how to avoid them. For commercial CMOS processes, detailed doping profiles are confidential, but the presented method provides an optimisation tool that is sufficiently accurate to investigate sensor behaviour and trade-offs of different sensor designs without knowledge of proprietary information. The workflow starts with detailed electric field finite element method simulations in TCAD, using generic doping profiles. Examples of the effect of varying different parameters of the simulated sensor are shown, as well as the creation of weighting fields, and transient pulse simulations. The fields resulting from TCAD simulations can be imported into the Allpix Squared Monte Carlo simulation framework, which enables high-statistics simulations, including modelling of stochastic fluctuations from the underlying physics processes of particle interaction. Example Monte Carlo simulation setups are presented and the different parts of a simulation chain are described. Simulation studies from small collection electrode CMOS sensors are presented, and example results are shown for both single sensors and multiple sensors in a test beam telescope configuration. The studies shown are those typically performed on sensor prototypes in test beam campaigns, and a comparison is made to test beam data, showing a maximum deviation of 4% and demonstrating that the approach is viable for generating realistic results. △ Less

Submitted 31 July, 2024; originally announced August 2024.

Comments: 22 pages, 25 figures, submitted to Nuclear Instruments and Methods in Physics Research, Section A

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

Authors: Gianluca Aglieri Rinella, Luca Aglietta, Matias Antonelli, Francesco Barile, Franco Benotto, Stefania Maria Beolè, Elena Botta, Giuseppe Eugenio Bruno, Francesca Carnesecchi, Domenico Colella, Angelo Colelli, Giacomo Contin, Giuseppe De Robertis, Florina Dumitrache, Domenico Elia, Chiara Ferrero, Martin Fransen, Alex Kluge, Shyam Kumar, Corentin Lemoine, Francesco Licciulli, Bong-Hwi Lim, Flavio Loddo, Magnus Mager, Davide Marras , et al. (21 additional authors not shown)

Abstract: In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a sm… ▽ More In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. Several variants of this chip with different pixel designs have been characterized with a (120 GeV/$c$) positive hadron beam. This result indicates that the APTS-OA prototype variants with the best performance achieve a time resolution of 63 ps with a detection efficiency exceeding 99% and a spatial resolution of 2 $μ$m, highlighting the potential of TPSCo 65nm CMOS imaging technology for high-energy physics and other fields requiring precise time measurement, high detection efficiency, and excellent spatial resolution. △ Less

Submitted 30 October, 2024; v1 submitted 26 July, 2024; originally announced July 2024.

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Authors: Gianluca Aglieri Rinella, Giacomo Alocco, Matias Antonelli, Roberto Baccomi, Stefania Maria Beole, Mihail Bogdan Blidaru, Bent Benedikt Buttwill, Eric Buschmann, Paolo Camerini, Francesca Carnesecchi, Marielle Chartier, Yongjun Choi, Manuel Colocci, Giacomo Contin, Dominik Dannheim, Daniele De Gruttola, Manuel Del Rio Viera, Andrea Dubla, Antonello di Mauro, Maurice Calvin Donner, Gregor Hieronymus Eberwein, Jan Egger, Laura Fabbietti, Finn Feindt, Kunal Gautam , et al. (69 additional authors not shown)

Abstract: Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25… ▽ More Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25 $μ$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations. △ Less

Submitted 13 March, 2024; originally announced March 2024.

Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology

Authors: Adriana Simancas, Justus Braach, Eric Buschmann, Ankur Chauhan, Dominik Dannheim, Manuel Del Rio Viera, Katharina Dort, Doris Eckstein, Finn Feindt, Ingrid-Maria Gregor, Karsten Hansen, Lennart Huth, Larissa Mendes, Budi Mulyanto, Daniil Rastorguev, Christian Reckleben, Sara Ruiz Daza, Judith Schlaadt, Paul Schütze, Walter Snoeys, Simon Spannagel, Marcel Stanitzki, Anastasiia Velyka, Gianpiero Vignola, Håkan Wennlöf

Abstract: Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improv… ▽ More Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach. △ Less

Submitted 22 February, 2024; originally announced February 2024.

Comments: 6 pages, 5 figures, submitted to Nuclear Instruments and Methods in Physics Research, Section A as a conference proceeding for the 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors

Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology

Authors: Lars Schall, Christian Bespin, Ivan Caicedo, Jochen Dingfelder, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Konstantinos Moustakas, Heinz Pernegger, Petra Riedler, Walter Snoeys, Norbert Wermes, Sinuo Zhang

Abstract: Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted… ▽ More Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180 nm TowerSemicondutor technology, which features a large scale (2 x 2) cm$^2$ chip divided into (512 x 512) pixels with a pitch of (33 x 33) um$^2$. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a threshold variation observed for TJ-Monopix2 in typical operating conditions are presented. △ Less

Submitted 19 February, 2024; originally announced February 2024.

Comments: Conference proceedings for 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD13), submitted to NIM-A

Radiation Hardness of MALTA2 Monolithic CMOS Sensors on Czochralski Substrates

Authors: Milou van Rijnbach, Dumitru Vlad Berlea, Valerio Dao, Martin Gaži, Phil Allport, Ignacio Asensi Tortajada, Prafulla Behera, Daniela Bortoletto, Craig Buttar, Florian Dachs, Ganapati Dash, Dominik Dobrijević, Lucian Fasselt, Leyre Flores Sanz de Acedo, Andrea Gabrielli, Vicente González, Giuliano Gustavino, Pranati Jana, Heinz Pernegger, Petra Riedler, Heidi Sandaker, Carlos Solans Sánchez, Walter Snoeys, Tomislav Suligoj, Marcos Vázquez Núñez , et al. (4 additional authors not shown)

Abstract: MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) no… ▽ More MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3E15 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021-2023 using the MALTA telescope. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator

Authors: Justus Braach, Eric Buschmann, Dominik Dannheim, Katharina Dort, Thanushan Kugathasan, Magdalena Munker, Walter Snoeys, Peter Švihra, Mateus Vicente

Abstract: Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a small collection electrode design on a 25 micrometers-thick epitaxial layer and contains 32 mini matrices of 68 hexagonal pixels each, with pixel pitches rangin… ▽ More Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a small collection electrode design on a 25 micrometers-thick epitaxial layer and contains 32 mini matrices of 68 hexagonal pixels each, with pixel pitches ranging from 8.66 to 20 micrometers. Four pixels are transmitting an analog output signal and 64 are transmitting binary hit information. Various design variations are explored, aiming at accelerating the charge collection and making the timing of the charge collection more uniform over the pixel area. Signal treatment of the analog waveforms, as well as reconstruction of digital position, time and charge information, is carried out off-chip. This contribution introduces the design of the sensor and readout system and presents performance results for various pixel designs achieved in recent test beam measurements with external tracking and timing reference detectors. A time resolution below 150 ps is obtained at full efficiency for all pixel pitches. △ Less

Submitted 25 September, 2023; v1 submitted 9 June, 2023; originally announced June 2023.

Comments: 15 pages, 15 figures, content as published in NIM A as part of a special issue for the ULITIMA 2023 conference

Journal ref: Nuclear Instruments and Methods in Physics Research Section A, Volume 1056, 2023

Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

Authors: Adriana Simancas, Justus Braach, Eric Buschmann, Ankur Chauhan, Dominik Dannheim, Manuel Del Rio Viera, Katharina Dort, Doris Eckstein, Finn Feindt, Ingrid-Maria Gregor, Karsten Hansen, Lennart Huth, Larissa Mendes, Budi Mulyanto, Daniil Rastorguev, Christian Reckleben, Sara Ruiz Daza, Paul Schütze, Walter Snoeys, Simon Spannagel, Marcel Stanitzki, Anastasiia Velyka, Gianpiero Vignola, Håkan Wennlöf

Abstract: Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scatterin… ▽ More Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. The Tangerine Project WP1 at DESY participates in the Strategic R&D Programme and is focused on the development of a monolithic active pixel sensor with a time and spatial resolution compatible with the requirements for a future lepton collider vertex detector. By fulfilling these requirements, the Tangerine detector is suitable as well to be used as telescope planes for the DESY-II Test Beam facility. The project comprises all aspects of sensor development, from the electronics engineering and the sensor design using simulations, to laboratory and test beam investigations of prototypes. Generic TCAD Device and Monte-Carlo simulations are used to establish an understanding of the technology and provide important insight into performance parameters of the sensor. Testing prototypes in laboratory and test beam facilities allows for the characterization of their response to different conditions. By combining results from all these studies it is possible to optimize the sensor layout. This contribution presents results from generic TCAD and Monte-Carlo simulations, and measurements performed with test chips of the first sensor submission. △ Less

Submitted 31 March, 2023; originally announced March 2023.

Comments: 7 pages, 8 figures, submitted to IEEE Xplore as conference record for 2022 IEEE NSS/MIC/RTSD

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

Authors: Christian Bespin, Ivan Caicedo, Jochen Dingfelder, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Konstantinos Moustakas, Heinz Pernegger, Petra Riedler, Lars Schall, Walter Snoeys, Norbert Wermes

Abstract: Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, fe… ▽ More Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$\,$cm x 2$\,$cm matrix consisting of 512 x 512 pixels with 33.04$\,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15}\,1\,$MeV n$_\text{eq}\,$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Comments: Conference proceedings for PIXEL2022 conference, submitted to PoS

MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Authors: H. Pernegger, P. Allport, D. V. Berlea, A. Birman, D. Bortoletto, C. Buttar, E. Charbon, F. Dachs, V. Dao, H. Denizli, D. Dobrijevic, M. Dyndal, A. Fenigstein, L. Flores Sanz de Acedo, P. Freeman, A. Gabrielli, M. Gazi, L. Gonella, V. Gonzalez, G. Gustavino, A. Haim, T. Kugathasan, M. LeBlanc, M. Munker, K. Y. Oyulmaz , et al. (14 additional authors not shown)

Abstract: Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granulari… ▽ More Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The small pixel size ($36.4\times 36.4$~$μ$m$^2$) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging. The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of $2\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The time resolution of the sensor is measured to be $σ=2$~ns. △ Less

Submitted 13 September, 2023; v1 submitted 10 January, 2023; originally announced January 2023.

Journal ref: JINST 18 P09018 (2023)

Digital Pixel Test Structures implemented in a 65 nm CMOS process

Authors: Gianluca Aglieri Rinella, Anton Andronic, Matias Antonelli, Mauro Aresti, Roberto Baccomi, Pascal Becht, Stefania Beole, Justus Braach, Matthew Daniel Buckland, Eric Buschmann, Paolo Camerini, Francesca Carnesecchi, Leonardo Cecconi, Edoardo Charbon, Giacomo Contin, Dominik Dannheim, Joao de Melo, Wenjing Deng, Antonello di Mauro, Jan Hasenbichler, Hartmut Hillemanns, Geun Hee Hong, Artem Isakov, Antoine Junique, Alex Kluge , et al. (27 additional authors not shown)

Abstract: The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down to 20 to 40 um and bent to form truly cylindrical half barrels. Among the… ▽ More The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down to 20 to 40 um and bent to form truly cylindrical half barrels. Among the first critical steps towards the realisation of this detector is to validate the sensor technology through extensive characterisation both in the laboratory and with in-beam measurements. The Digital Pixel Test Structure (DPTS) is one of the prototypes produced in the first sensor submission in this technology and has undergone a systematic measurement campaign whose details are presented in this article. The results confirm the goals of detection efficiency and non-ionising and ionising radiation hardness up to the expected levels for ALICE ITS3 and also demonstrate operation at +20 C and a detection efficiency of 99% for a DPTS irradiated with a dose of $10^{15}$ 1 MeV n$_{\mathrm{eq}}/$cm$^2$. Furthermore, spatial, timing and energy resolutions were measured at various settings and irradiation levels. △ Less

Submitted 10 July, 2023; v1 submitted 16 December, 2022; originally announced December 2022.

Comments: v4: Corrected Table 1. v3: Implemented reviewers' comments. v2: Updated threshold calibration method. Implemented colorblind friendly color palette in all figures. Updated references

Timing performance of radiation hard MALTA monolithic Pixel sensors

Authors: G. Gustavino, P. Allport, I. Asensi, D. V. Berlea, D. Bortoletto, C. Buttar, F. Dachs, V. Dao, H. Denizli, D. Dobrijevic, L. Flores, A. Gabrielli, L. Gonella, V. González, M. LeBlanc, K. Oyulmaz, H. Pernegger, F. Piro, P. Riedler, H. Sandaker, C. Solans, W. Snoeys, T. Suligoj, M. van Rijnbach, A. Sharma , et al. (4 additional authors not shown)

Abstract: The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ and time resolution below 2 ns, with uniform charge collection efficien… ▽ More The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ and time resolution below 2 ns, with uniform charge collection efficiency across the Pixel of size $36.4 \times 36.4~μ\text{m}^2$ with a $3~μ\text{m}^2$ electrode size. The MALTA2 demonstrator produced in 2021 on high-resistivity epitaxial silicon and on Czochralski substrates implements a new cascoded front-end that reduces the RTS noise and has a higher gain. This contribution shows results from MALTA2 on timing resolution at the nanosecond level from the CERN SPS test-beam campaign of 2021. △ Less

Submitted 31 January, 2023; v1 submitted 29 September, 2022; originally announced September 2022.

Comments: 8 pages, 8 figures. Submitted to Journal of Instrumentation (JINST). Proceedings of the 23rd International Workshop on Radiation Imaging Detectors IWORID 2022

Recent results with radiation-tolerant TowerJazz 180 nm MALTA Sensors

Authors: Matt LeBlanc, Phil Allport, Igancio Asensi, Dumitru-Vlad Berlea, Daniela Bortoletto, Craig Buttar, Florian Dachs, Valerio Dao, Haluk Denizli, Dominik Dobrijevic, Leyre Flores, Andrea Gabrielli, Laura Gonella, Vicente González, Giuliano Gustavino, Kaan Oyulmaz, Heinz Pernegger, Francesco Piro, Petra Riedler, Heidi Sandaker, Carlos Solans, Walter Snoeys, Tomislav Suligoj, Milou van Rijnbach, Abhishek Sharma , et al. (4 additional authors not shown)

Abstract: To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 n… ▽ More To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well below current hybrid pixel detectors, high time resolution (< 2 ns) and excellent charge collection efficiency across pixel geometries. These sensors have a total silicon thickness of between 50-300 $μ$m, implying reduced material budgets and multiple scattering rates for future detectors which utilize such technology. Furthermore, their monolithic design bypasses the costly stage of bump-bonding in hybrid sensors and can substantially reduce detector costs. This contribution presents the latest results from characterization studies of the MALTA2 sensors, including results demonstrating the radiation tolerance of these sensors. △ Less

Submitted 9 September, 2022; originally announced September 2022.

Comments: 4 pages, 4 figures. Accepted by Nuclear Inst. and Methods in Physics Research, A (Proceedings of VCI 2022)

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Authors: Katharina Dort, Rafael Ballabriga, Justus Braach, Eric Buschmann, Michael Campbell, Dominik Dannheim, Lennart Huth, Iraklis Kremastiotis, Jens Kröger, Lucie Linssen, Magdalena Munker, Walter Snoeys, Simon Spannagel, Peter Švihra, Tomas Vanat

Abstract: Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams ar… ▽ More Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution. △ Less

Submitted 30 August, 2022; v1 submitted 22 April, 2022; originally announced April 2022.

Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors

Authors: Rafael Ballabriga, Justus Braach, Eric Buschmann, Michael Campbell, Dominik Dannheim, Katharina Dort, Lennart Huth, Iraklis Kremastiotis, Jens Kröger, Lucie Linssen, Magdalena Munker, Paul Schütze, Walter Snoeys, Simon Spannagel, Tomas Vanat

Abstract: An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and produc… ▽ More An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and production of secondary particles, which offers a realistic simulation scenario. The transient simulation approach is an important tool to achieve an accurate time-resolved description of the sensor, which is crucial in the face of novel detector prototypes with increasingly precise timing capabilities. The simulated time resolution as a function of operating parameters as well as the full transient pulse can be monitored and assessed, which offers a new perspective on the optimisation and characterisation of silicon sensors. In this paper, a combination of electrostatic finite-element simulations using 3D TCAD and transient Monte Carlo simulations with the Allpix Squared framework are presented for a monolithic CMOS pixel sensor with a small collection diode, that is characterised by a highly inhomogeneous, complex electric field. The results are compared to transient 3D TCAD simulations that offer a precise simulation of the transient behaviour but long computation times. Additionally, the simulations are benchmarked against test-beam data and good agreement is found for the performance parameters over a wide range of different operation conditions. △ Less

Submitted 9 February, 2022; v1 submitted 7 February, 2022; originally announced February 2022.

First demonstration of in-beam performance of bent Monolithic Active Pixel Sensors

Authors: ALICE ITS project, :, G. Aglieri Rinella, M. Agnello, B. Alessandro, F. Agnese, R. S. Akram, J. Alme, E. Anderssen, D. Andreou, F. Antinori, N. Apadula, P. Atkinson, R. Baccomi, A. Badalà, A. Balbino, C. Bartels, R. Barthel, F. Baruffaldi, I. Belikov, S. Beole, P. Becht, A. Bhatti, M. Bhopal, N. Bianchi , et al. (230 additional authors not shown)

Abstract: A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to ra… ▽ More A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to radii of about 2cm without any signs of mechanical or electrical damage. During a subsequent characterisation using a 5.4GeV electron beam, it was further confirmed that they preserve their full electrical functionality as well as particle detection performance. In this article, the bending procedure and the setup used for characterisation are detailed. Furthermore, the analysis of the beam test, including the measurement of the detection efficiency as a function of beam position and local inclination angle, is discussed. The results show that the sensors maintain their excellent performance after bending to radii of 2cm, with detection efficiencies above 99.9% at typical operating conditions, paving the way towards a new class of detectors with unprecedented low material budget and ideal geometrical properties. △ Less

Submitted 17 August, 2021; v1 submitted 27 May, 2021; originally announced May 2021.

Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement

Authors: R. Ballabriga, E. Buschmann, M. Campbell, D. Dannheim, K. Dort, N. Egidos, L. Huth, I. Kremastiotis, J. Kröger, L. Linssen, X. Llopart, M. Munker, A. Nürnberg, W. Snoeys, S. Spannagel, T. Vanat, M. Vicente, M. Williams

Abstract: The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the trackin… ▽ More The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC tracking detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collection. The pixel matrix consists of $16\times128$ detection channels measuring $300 \times 30$ microns. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the characterisation results of the CLICTD sendor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a time resolution down to $(5.8 \pm 0.1)$ ns and a spatial resolution down to $(4.6 \pm 0.2)$ microns are measured. The hit detection efficiency is found to be well above 99.7% for thresholds of the order of several hundred electrons. △ Less

Submitted 8 February, 2021; originally announced February 2021.

Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip

Authors: G. Aglieri Rinella, G. Chaosong, A. di Mauro, J. Eum, H. Hillemanns, A. Junique, M. Keil, D. Kim, H. Kim, T. Kugathasan, S. Lee, M. Mager, V. Manzari, C. A. Marin Tobon, P. Martinengo, H. Mugnier, L. Musa, F. Reidt, J. Rousset, K. Sielewicz, W. Snoeys, M. Šuljić, J. W. van Hoorne, Q. M. Waheed, P. Yang , et al. (1 additional authors not shown)

Abstract: This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the TowerJazz 180 nm CMOS process. These results gave guidance for the optimisation of the diode implemented in ALPIDE, the chip used in the second generation… ▽ More This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the TowerJazz 180 nm CMOS process. These results gave guidance for the optimisation of the diode implemented in ALPIDE, the chip used in the second generation Inner Tracking System of ALICE, and serve as reference for future simulation studies of similar devices. The studied parameters include: reverse substrate bias, epitaxial layer thickness, charge collection electrode size and the spacing of the electrode to surrounding in-pixel electronics. The results from pixels of 28 um pitch confirm that even in partially depleted circuits, charge collection can be fast (<10 ns), and quantify the influence of the parameters onto the signal sharing and amplitudes, highlighting the importance of a correct spacing between wells and of the impact of the reverse substrate bias. △ Less

Submitted 23 September, 2020; v1 submitted 22 September, 2020; originally announced September 2020.

DMAPS Monopix developments in large and small electrode designs

Authors: Christian Bespin, Marlon Barbero, Pierre Barrillon, Ivan Berdalovic, Siddharth Bhat, Patrick Breugnon, Ivan Caicedo, Roberto Cardella, Zongde Chen, Yavuz Degerli, Jochen Dingfelder, Leyre Flores Sanz de Acedo, Stephanie Godiot, Fabrice Guilloux, Toko Hirono, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Thanushan Kugathasan, Cesar Augusto Marin Tobon, Konstantinos Moustakas, Patrick Pangaud, Heinz Pernegger, Francesco Piro, Petra Riedler , et al. (8 additional authors not shown)

Abstract: LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows… ▽ More LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams. △ Less

Submitted 9 July, 2020; v1 submitted 3 June, 2020; originally announced June 2020.

Comments: 7 pages, 8 figures. Proceedings of the 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors

Combining TCAD and Monte Carlo Methods to Simulate CMOS Pixel Sensors with a Small Collection Electrode using the Allpix Squared Framework

Authors: Dominik Dannheim, Katharina Dort, Daniel Hynds, Magdalena Munker, Andreas Nürnberg, Walter Snoeys, Simon Spannagel

Abstract: Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and the inclusion of Landau fluctuations and production of secondary particles in the sensor are crucial ingredients for the understanding and reproduction of detect… ▽ More Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and the inclusion of Landau fluctuations and production of secondary particles in the sensor are crucial ingredients for the understanding and reproduction of detector characteristics. In this paper, a CMOS pixel sensor with small collection electrode design, implemented in a high-resistivity epitaxial layer, is simulated by integrating a detailed electric field model from finite element TCAD into a Monte Carlo based simulation with the Allpix$^2$ framework. The simulation results are compared to data recorded in test-beam measurements and very good agreement is found for various quantities such as cluster size, spatial resolution and efficiency. Furthermore, the observables are studied as a function of the intra-pixel incidence position to enable a detailed comparison with the detector behavior observed in data. The validation of such simulations is fundamental for modeling the detector response and for predicting the performance of future prototype designs. Moreover, visualization plots extracted from the charge carrier drift model of the framework can aid in understanding the charge propagation behavior in different regions of the sensor. △ Less

Submitted 28 February, 2020; originally announced February 2020.

Comments: 15 pages, 18 figures

Report number: CLICdp-Pub-2019-008

Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Authors: M. Dyndal, V. Dao, P. Allport, I. Asensi Tortajada, M. Barbero, S. Bhat, D. Bortoletto, I. Berdalovic, C. Bespin, C. Buttar, I. Caicedo, R. Cardella, F. Dachs, Y. Degerli, H. Denizli, L. Flores Sanz de Acedo, P. Freeman, L. Gonella, A. Habib, T. Hemperek, T. Hirono, B. Hiti, T. Kugathasan, I. Mandić, D. Maneuski , et al. (19 additional authors not shown)

Abstract: Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico… ▽ More Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. △ Less

Submitted 14 December, 2019; v1 submitted 26 September, 2019; originally announced September 2019.

Measurement of the relative response of TowerJazz Mini-MALTA CMOS prototypes at Diamond Light Source

Authors: Maria Mironova, Kaloyan Metodiev, Phil Allport, Ivan Berdalovic, Daniela Bortoletto, Craig Buttar, Roberto Cardella, Valerio Dao, Mateusz Dyndal, Patrick Freeman, Leyre Flores Sanz de Acedo, Laura Gonella, Thanushan Kugathasan, Heinz Pernegger, Francesco Piro, Richard Plackett, Petra Riedler, Abhishek Sharma, Enrico Junior Schioppa, Ian Shipsey, Carlos Solans Sanchez, Walter Snoeys, Hakan Wennloef, Daniel Weatherill, Daniel Wood , et al. (1 additional authors not shown)

Abstract: This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were co… ▽ More This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous $\mathrm{n^-}$ layer layout and front-end, and extra deep p-well and $\mathrm{n^-}$ gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. △ Less

Submitted 2 October, 2019; v1 submitted 18 September, 2019; originally announced September 2019.

Detector Technologies for CLIC

Authors: A. C. Abusleme Hoffman, G. Parès, T. Fritzsch, M. Rothermund, H. Jansen, K. Krüger, F. Sefkow, A. Velyka, J. Schwandt, I. Perić, L. Emberger, C. Graf, A. Macchiolo, F. Simon, M. Szalay, N. van der Kolk, H. Abramowicz, Y. Benhammou, O. Borysov, M. Borysova, A. Joffe, S. Kananov, A. Levy, I. Levy, G. Eigen , et al. (107 additional authors not shown)

Abstract: The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Stan… ▽ More The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Standard Model processes, particularly in the Higgs-boson and top-quark sectors. The precision required for such measurements and the specific conditions imposed by the beam dimensions and time structure put strict requirements on the detector design and technology. This includes low-mass vertexing and tracking systems with small cells, highly granular imaging calorimeters, as well as a precise hit-time resolution and power-pulsed operation for all subsystems. A conceptual design for the CLIC detector system was published in 2012. Since then, ambitious R&D programmes for silicon vertex and tracking detectors, as well as for calorimeters have been pursued within the CLICdp, CALICE and FCAL collaborations, addressing the challenging detector requirements with innovative technologies. This report introduces the experimental environment and detector requirements at CLIC and reviews the current status and future plans for detector technology R&D. △ Less

Submitted 7 May, 2019; originally announced May 2019.

Comments: 152 pages, 116 figures; published as CERN Yellow Report Monograph Vol. 1/2019; corresponding editors: Dominik Dannheim, Katja Krüger, Aharon Levy, Andreas Nürnberg, Eva Sicking

Report number: CERN-2019-001

Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance

Authors: Magdalena Munker, Mathieu Benoit, Dominik Dannheim, Amos Fenigstein, Thanushan Kugathasan, Tomer Leitner, Heinz Pernegger, Petra Riedler, Walter Snoeys

Abstract: CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. However, the low electric field in the pixel cor… ▽ More CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. However, the low electric field in the pixel corners of such sensors results in an increased charge collection time, that makes a fully efficient operation after irradiation and a timing resolution in the order of nanoseconds challenging for pixel sizes larger than approximately forty micrometers. This paper presents the development of concepts of CMOS sensors with a small collection electrode to overcome these limitations, using three-dimensional Technology Computer Aided Design simulations. The studied design uses a 0.18 micrometer process implemented on a high-resistivity epitaxial layer. △ Less

Submitted 7 May, 2019; v1 submitted 25 March, 2019; originally announced March 2019.

Comments: Proceedings of the PIXEL 2018 Workshop

The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Authors: Ivan Caicedo, Marlon Barbero, Pierre Barrillon, Ivan Berdalovic, Siddharth Bhat, Christian Bespin, Patrick Breugnon, Roberto Cardella, Zongde Chen, Yavuz Degerli, Jochen Dingfelder, Stephanie Godiot, Fabrice Guilloux, Toko Hirono, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Thanushan Kugathasan, Konstantinos Moustakas, Patrick Pangaud, Heinz Pernegger, David-Leon Pohl, Petra Riedler, Alexandre Rozanov, Piotr Rymaszewski , et al. (5 additional authors not shown)

Abstract: Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>… ▽ More Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed. △ Less

Submitted 25 April, 2019; v1 submitted 10 February, 2019; originally announced February 2019.

Comments: Proceedings of the PIXEL 2018 Workshop

CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade

Authors: K. Moustakas, M. Barbero, I. Berdalovic, C. Bespin, P. Breugnon, I. Caicedo, R. Cardella, Y. Degerli, N. Egidos Plaja, S. Godiot, F. Guilloux, T. Hemperek, T. Hirono, H. Krueger, T. Kugathasan, C. A. Marin Tobon, P. Pangaud, H. Pernegger, E. J. Schioppa, W. Snoeys, M. Vandenbroucke, T. Wang, N. Wermes

Abstract: Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based o… ▽ More Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC). LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of $50x250~μm^{2}$ and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99\% has been measured after irradiation to $1\cdot10^{15}~n_{eq}/cm^{2}$. TJ-Monopix is a large scale $(1x2~cm^{2})$ prototype featuring pixels of $36x40~μm^{2}$ size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance ($<=3~fF$) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) $\approx11e^{-}$, threshold $\approx300~e^-$, threshold dispersion $\approx30~e^-$ and total power consumption lower than $120~mW/cm^2$. △ Less

Submitted 10 September, 2018; originally announced September 2018.

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Authors: T. Wang, M. Barbero, I. Berdalovic, C. Bespin, S. Bhat, P. Breugnon, I. Caicedo, R. Cardella, Z. Chen, Y. Degerli, N. Egidos, S. Godiot, F. Guilloux, T. Hemperek, T. Hirono, H. Krüger, T. Kugathasan, F. Hügging, C. A. Marin Tobon, K. Moustakas, P. Pangaud, P. Schwemling, H. Pernegger, D-L. Pohl, A. Rozanov , et al. (3 additional authors not shown)

Abstract: Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being develo… ▽ More Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown. △ Less

Submitted 29 September, 2017; originally announced October 2017.

Comments: International Workshop on Radiation Imaging Detectors 2017

Diamond Detectors for the TOTEM Timing Upgrade

Authors: TOTEM Collaboration, G. Antchev, P. Aspell, I. Atanassov, V. Avati, J. Baechler, V. Berardi, M. Berretti, E. Bossini, U. Bottigli, M. Bozzo, P. Broulím, A. Buzzo, F. S. Cafagna, M. G. Catanesi, M. Csanád, T. Csörgő, M. Deile, F. De Leonardis, A. D'Orazio, M. Doubek, K. Eggert, V. Eremin, F. Ferro, A. Fiergolski , et al. (58 additional authors not shown)

Abstract: This paper describes the design and the performance of the timing detector developed by the TOTEM Collaboration for the Roman Pots (RPs) to measure the Time-Of-Flight (TOF) of the protons produced in central diffractive interactions at the LHC. The measurement of the TOF of the protons allows the determination of the longitudinal position of the proton interaction vertex and its association with o… ▽ More This paper describes the design and the performance of the timing detector developed by the TOTEM Collaboration for the Roman Pots (RPs) to measure the Time-Of-Flight (TOF) of the protons produced in central diffractive interactions at the LHC. The measurement of the TOF of the protons allows the determination of the longitudinal position of the proton interaction vertex and its association with one of the vertices reconstructed by the CMS detectors. The TOF detector is based on single crystal Chemical Vapor Deposition (scCVD) diamond plates and is designed to measure the protons TOF with about 50 ps time precision. This upgrade to the TOTEM apparatus will be used in the LHC run 2 and will tag the central diffractive events up to an interaction pileup of about 1. A dedicated fast and low noise electronics for the signal amplification has been developed. The digitization of the diamond signal is performed by sampling the waveform. After introducing the physics studies that will most profit from the addition of these new detectors, we discuss in detail the optimization and the performance of the first TOF detector installed in the LHC in November 2015. △ Less

Submitted 18 January, 2017; originally announced January 2017.

Comments: 26 pages, 18 figures, 2 tables, submitted for publication to JINST

Report number: CERN-PH-EP-2016-317

Journal ref: JINST 12 (2017) no.03, P03007

LHC Optics Measurement with Proton Tracks Detected by the Roman Pots of the TOTEM Experiment

Authors: The TOTEM Collaboration, G. Antchev, P. Aspell, I. Atanassov, V. Avati, J. Baechler, V. Berardi, M. Berretti, E. Bossini, U. Bottigli, M. Bozzo, E. Brücken, A. Buzzo, F. S. Cafagna, M. G. Catanesi, C. Covault, M. Csanád, T. Csörgő, M. Deile, M. Doubek, K. Eggert, V. Eremin, F. Ferro, A. Fiergolski, F. Garcia , et al. (54 additional authors not shown)

Abstract: Precise knowledge of the beam optics at the LHC is crucial to fulfil the physics goals of the TOTEM experiment, where the kinematics of the scattered protons is reconstructed with the near-beam telescopes -- so-called Roman Pots (RP). Before being detected, the protons' trajectories are influenced by the magnetic fields of the accelerator lattice. Thus precise understanding of the proton transport… ▽ More Precise knowledge of the beam optics at the LHC is crucial to fulfil the physics goals of the TOTEM experiment, where the kinematics of the scattered protons is reconstructed with the near-beam telescopes -- so-called Roman Pots (RP). Before being detected, the protons' trajectories are influenced by the magnetic fields of the accelerator lattice. Thus precise understanding of the proton transport is of key importance for the experiment. A novel method of optics evaluation is proposed which exploits kinematical distributions of elastically scattered protons observed in the RPs. Theoretical predictions, as well as Monte Carlo studies, show that the residual uncertainty of this optics estimation method is smaller than 0.25 percent. △ Less

Submitted 2 June, 2014; originally announced June 2014.

Comments: 20 pages, 11 figures, 5 figures, to be submitted to New J. Phys

Report number: CERN-PH-EP-2014-066

Performance of the TOTEM Detectors at the LHC

Authors: TOTEM Collaboration, G. Antchev, P. Aspell, I. Atanassov, V. Avati, J. Baechler, M. G. Bagliesi, V. Berardi, M. Berretti, E. Bossini, U. Bottigli, M. Bozzo, E. Brücken, A. Buzzo, F. S. Cafagna, M. G. Catanesi, R. Cecchi, C. Covault, M. Csanád, T. Csörgő, M. Deile, M. Doubek, K. Eggert, V. Eremin, F. Ferro , et al. (57 additional authors not shown)

Abstract: The TOTEM Experiment is designed to measure the total proton-proton cross-section with the luminosity-independent method and to study elastic and diffractive pp scattering at the LHC. To achieve optimum forward coverage for charged particles emitted by the pp collisions in the interaction point IP5, two tracking telescopes, T1 and T2, are installed on each side of the IP in the pseudorapidity regi… ▽ More The TOTEM Experiment is designed to measure the total proton-proton cross-section with the luminosity-independent method and to study elastic and diffractive pp scattering at the LHC. To achieve optimum forward coverage for charged particles emitted by the pp collisions in the interaction point IP5, two tracking telescopes, T1 and T2, are installed on each side of the IP in the pseudorapidity region 3.1 < = |eta | < = 6.5, and special movable beam-pipe insertions - called Roman Pots (RP) - are placed at distances of +- 147 m and +- 220 m from IP5. This article describes in detail the working of the TOTEM detector to produce physics results in the first three years of operation and data taking at the LHC. △ Less

Submitted 10 October, 2013; originally announced October 2013.

Comments: 40 pages, 31 figures, submitted to Int. J. Mod. Phys. A

Report number: CERN-PH-EP-2013-173

Journal ref: Int. J. Mod. Phys. A 28, 1330046 (2013)

R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging

Authors: M. Battaglia, C. Da Via, D. Bortoletto, R. Brenner, M. Campbell, P. Collins, G. F. Dalla Betta, P. Denes, H. Graafsma, I. M. Gregor, A. Kluge, V. Manzari, C. Parkes, V. Re, P. Riedler, G. Rizzo, W. Snoeys, M. Winter

Abstract: This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and highlights the relation to radiation detection and imaging applications in other fields of science. This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and highlights the relation to radiation detection and imaging applications in other fields of science. △ Less

Submitted 1 August, 2012; originally announced August 2012.

Comments: 17 pages, 2 figures, submitted to the European Strategy Preparatory Group

The First 1 1/2 Years of TOTEM Roman Pot Operation at LHC

Authors: M. Deile, G. H. Antchev, R. B. Appleby, R. W. Assmann, I. Atanassov, V. Avati, J. Baechler, R. Bruce, M. Dupont, K. Eggert, B. Farnham, J. Kaspar, F. Lucas Rodriguez, J. Morant, H. Niewiadomski, X. Pons, E. Radermacher, S. Ravat, F. Ravotti, S. Redaelli, G. Ruggiero, H. Sabba, M. Sapinski, W. Snoeys, G. Valentino , et al. (1 additional authors not shown)

Abstract: Since the LHC running season 2010, the TOTEM Roman Pots (RPs) are fully operational and serve for collecting elastic and diffractive proton-proton scattering data. Like for other moveable devices approaching the high intensity LHC beams, a reliable and precise control of the RP position is critical to machine protection. After a review of the RP movement control and position interlock system, the… ▽ More Since the LHC running season 2010, the TOTEM Roman Pots (RPs) are fully operational and serve for collecting elastic and diffractive proton-proton scattering data. Like for other moveable devices approaching the high intensity LHC beams, a reliable and precise control of the RP position is critical to machine protection. After a review of the RP movement control and position interlock system, the crucial task of alignment will be discussed. △ Less

Submitted 26 October, 2011; originally announced October 2011.

Comments: 3 pages, 6 figures; 2nd International Particle Accelerator Conference (IPAC 2011), San Sebastian, Spain; contribution MOPO011

Journal ref: Proceedings of IPAC 2011 (2011) 502-504; ISBN 978-92-9083-366-6

X-ray Imaging Using a Hybrid Photon Counting GaAs Pixel Detector

Authors: C. Schwarz, M. Campbell, R. Goeppert, E. H. M. Heijne, J. Ludwig, G. Meddeler, B. Mikulec, E. Pernigotti, M. Rogalla, K. Runge, A. Soldner-Rembold, K. M. Smith, W. Snoeys, J. Watt

Abstract: The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprise… ▽ More The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprises a preamplifier, a discriminator with a 3-bit threshold adjust and a 15-bit counter. The detector is realized by an array of Schottky diodes processed on semi-insulating LEC-GaAs bulk material. An IV-charcteristic and a detector bias voltage scan showed that the detector can be operated with voltages around 200 V. Images of various objects were taken by using a standard X-ray tube for dental diagnostics. The signal to noise ratio (SNR) was also determined. The applications of these imaging systems range from medical applications like digital mammography or dental X-ray diagnostics to non destructive material testing (NDT). Because of the separation of detector and readout chip, different materials can be investigated and compared. △ Less

Submitted 21 December, 1998; originally announced December 1998.

Comments: 6 pages, 7 figures, uses espcrc2.sty, submitted to Proc. of 6th Int. Conference on Advanced Technology, and Particle Physics, Villa Olmo, Como, Italy, 5-9 October 1998, to be published in Nucl. Phys. B (Proc. Supplements)

Report number: FREIBURG-EHEP-98/11

Journal ref: Nucl.Phys.Proc.Suppl.78:491-496,1999