-
Tracking the Evolution of Near-Field Photonic Qubits into High-Dimensional Qudits via State Tomography
Authors:
Amit Kam,
Shai Tsesses,
Lior Fridman,
Yigal Ilin,
Amir Sivan,
Guy Sayer,
Kobi Cohen,
Amit Shaham,
Liat Nemirovsky-Levy,
Larisa Popilevsky,
Meir Orenstein,
Mordechai Segev,
Guy Bartal
Abstract:
Quantum nanophotonics offers essential tools and technologies for controlling quantum states, while maintaining a miniature form factor and high scalability. For example, nanophotonic platforms can transfer information from the traditional degrees of freedom (DoFs), such as spin angular momentum (SAM) and orbital angular momentum (OAM), to the DoFs of the nanophotonic platform - and back, opening…
▽ More
Quantum nanophotonics offers essential tools and technologies for controlling quantum states, while maintaining a miniature form factor and high scalability. For example, nanophotonic platforms can transfer information from the traditional degrees of freedom (DoFs), such as spin angular momentum (SAM) and orbital angular momentum (OAM), to the DoFs of the nanophotonic platform - and back, opening new directions for quantum information processing. Recent experiments have utilized the total angular momentum (TAM) of a photon as a unique means to produce entangled qubits in nanophotonic platforms. Yet, the process of transferring the information between the free-space DoFs and the TAM was never investigated, and its implications are still unknown. Here, we reveal the evolution of quantum information in heralded single photons as they couple into and out of the near-field of a nanophotonic system. Through quantum state tomography, we discover that the TAM qubit in the near-field becomes a free-space qudit entangled in the photonic SAM and OAM. The extracted density matrix and Wigner function in free-space indicate state preparation fidelity above 97%. The concepts described here bring new concepts and methodologies in developing high-dimensional quantum circuitry on a chip.
△ Less
Submitted 29 April, 2025;
originally announced April 2025.
-
Photoluminescence of MAPbI$_3$: a semiconductor science and technology point of view
Authors:
Valerio Campanari,
Antonio Agresti,
Sara Pescetelli,
Aswathi K. Sivan,
Daniele Catone,
Patrick O Keeffe,
Stefano Turchini,
Aldo Di Carlo,
Faustino Martelli
Abstract:
In this work, we perform steady-state continuous wave (cw) photoluminescence (PL) measurements on a MAPbI$_3$ thin film in the temperature range of 10-160 K, using excitation densities spanning over almost seven orders of magnitude, in particular investigating very low densities, rarely used in the published literature. The temperature range used in this study is below or at the edge of the orthor…
▽ More
In this work, we perform steady-state continuous wave (cw) photoluminescence (PL) measurements on a MAPbI$_3$ thin film in the temperature range of 10-160 K, using excitation densities spanning over almost seven orders of magnitude, in particular investigating very low densities, rarely used in the published literature. The temperature range used in this study is below or at the edge of the orthorhombic-tetragonal phase transition in MAPbI$_3$. In particular, we show that even in high quality MAPbI$_3$, capable of providing high photovoltaic efficiency, the defect density is high enough to give rise to an energy level band. Furthermore, we show that the intensity ratio between the two PL components related to the two crystalline phases, is a function of temperature and excitation. At high excitation intensities, we show that amplified spontaneous emission is attainable even in cw conditions. Time-resolved PL is also performed to justify some assignments of the PL features. Finally, our systematic approach, typical for the characterization of semiconductors, suggests that it should also be applied to hybrid halide perovskites and that, under suitable conditions, the PL characteristics of MAPbI$_3$ can be reconciled with those of conventional inorganic semiconductors.
△ Less
Submitted 20 August, 2020;
originally announced August 2020.
-
Ultrafast optical spectroscopy of semiconducting and plasmonic nanostructures and their hybrids
Authors:
Daniele Catone,
Lorenzo Di Mario,
Faustino Martelli,
Patrick O'Keeffe,
Alessandra Paladini,
Jacopo Stefano Pelli Cresi,
Aswathi K. Sivan,
Lin Tian,
Francesco Toschi,
Stefano Turchini
Abstract:
The knowledge of the carrier dynamics in nanostructures is of fundamental importance for the development of (opto)electronic devices. This is true for semiconducting nanostructures as well as for plasmonic nanoparticles (NPs). Indeed, improvement of photocatalytic efficiencies by combining semiconductor and plasmonic nanostructures is one of the reasons why their ultrafast dynamics are intensively…
▽ More
The knowledge of the carrier dynamics in nanostructures is of fundamental importance for the development of (opto)electronic devices. This is true for semiconducting nanostructures as well as for plasmonic nanoparticles (NPs). Indeed, improvement of photocatalytic efficiencies by combining semiconductor and plasmonic nanostructures is one of the reasons why their ultrafast dynamics are intensively studied. In this work, we will review our activity on ultrafast spectroscopy in nanostructures carried out in the recently established EuroFEL Support Laboratory. We have investigated the dynamical plasmonic responses of metal NPs both in solution and in 2D and 3D arrays on surfaces, with particular attention being paid to the effects of the nanoparticle shape and to the conversion of absorbed light into heat on a nano-localized scale. We will summarize the results obtained on the carrier dynamics in nanostructured perovskites with emphasis on the hot-carrier dynamics and in semiconductor nanosystems such as ZnSe and Si nanowires, with particular attention to the band-gap bleaching dynamics. Subsequently, the study of semiconductor-metal NP hybrids, such as CeO$_2$-Ag NPs, ZnSe-Ag NPs and ZnSe-Au NPs, allows the discussion of interaction mechanisms such as charge carrier transfer and F{รถ}rster interaction. Finally, we assess an alternative method for the sensitization of wide band gap semiconductors to visible light by discussing the relationship between the carrier dynamics of TiO$_2$ NPs and V-doped TiO$_2$ NPs and their catalytic properties.
△ Less
Submitted 18 September, 2020; v1 submitted 10 August, 2020;
originally announced August 2020.
