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Leveraging both faces of polar semiconductor wafers for functional devices
Authors:
Len van Deurzen,
Eungkyun Kim,
Naomi Pieczulewski,
Zexuan Zhang,
Anna Feduniewicz-Zmuda,
Mikolaj Chlipala,
Marcin Siekacz,
David Muller,
Huili Grace Xing,
Debdeep Jena,
Henryk Turski
Abstract:
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium)…
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Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium) face of gallium nitride has been used for photonic devices such as LEDs and lasers. Though the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high electron mobility transistors due to favorable polarization discontinuities. In this work we introduce dualtronics, showing that it is possible to make photonic devices on the cation face, and electronic devices on the anion face, of the same semiconductor wafer. This opens the possibility for leveraging both faces of polar semiconductors in a single structure, where electronic, photonic, and acoustic properties can be implemented on opposite faces of the same wafer, dramatically enhancing the functional capabilities of this revolutionary semiconductor family.
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Submitted 25 September, 2024; v1 submitted 4 April, 2024;
originally announced April 2024.
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Electrically pumped blue laser diodes with nanoporous bottom cladding
Authors:
Marta Sawicka,
Grzegorz Muziol,
Natalia Fiuczek,
Mateusz Hajdel,
Marcin Siekacz,
Anna Feduniewicz-Żmuda,
Krzesimir Nowakowski-Szkudlarek,
Paweł Wolny,
Mikołaj Żak,
Henryk Turski,
Czesław Skierbiszewski
Abstract:
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cla…
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We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cladding are compared to the refer-ence structures. The pulse mode operation was obtained at 448.7 nm with a slope efficiency (SE) of 0.2 W/A while the reference device without etched cladding layer was lasing at 457 nm with SE of 0.56 W/A. The de-sign of the LDs with porous bottom cladding was modelled theoretically. Performed calculations allowed to choose the optimum porosity and thickness of the cladding needed for the desired optical mode confinement and reduced the risk of light leakage to the substrate and to the top-metal contact. This demonstration opens new possibilities for the fabrication of III-nitride LDs.
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Submitted 11 January, 2022;
originally announced January 2022.
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GaN-based Bipolar Cascade Lasers with 25nm wide Quantum Wells: Simulation and Analysis
Authors:
J. Piprek,
G. Muziol,
M. Siekacz,
C. Skierbiszewski
Abstract:
We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quant…
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We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quantum levels. However, internal absorption, low p-cladding conductivity, and self-heating are shown to strongly limit the laser performance.
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Submitted 24 June, 2021;
originally announced June 2021.
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Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers
Authors:
Shyam Bharadwaj,
Jeffrey Miller,
Kevin Lee,
Joshua Lederman,
Marcin Siekacz,
Huili Xing,
Debdeep Jena,
Czesław Skierbiszewski,
Henryk Turski
Abstract:
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga…
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Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga$_{0.83}$N/GaN TJs and UID GaN spacers to separate the optical mode from the heavily doped absorbing p-cladding regions. In such laser structures, polarization offsets at the electron blocking layer, spacer, and quantum barrier interfaces play discernable roles in carrier transport. By comparing a top-TJ structure to a bottom-TJ structure, and correlating features in the electroluminescence, capacitance-voltage, and current-voltage characteristics to unique signatures of the N- and Ga-polar polarization heterointerfaces in energy band diagram simulations, we identify that improved hole injection at low currents, and improved electron blocking at high currents, leads to higher injection efficiency and higher output power for the bottom-TJ device throughout 5 orders of current density (0.015 - 1000 A/cm$^2$). Moreover, even with the addition of a UID GaN spacer, differential resistances are state-of-the-art, below 7x10-4 $Ω$cm$^2$. These results highlight the virtues of the bottom-TJ geometry for use in high-efficiency laser diodes.
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Submitted 8 November, 2019;
originally announced November 2019.
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Highly efficient optical transition between excited states in wide InGaN quantum wells
Authors:
Grzegorz Muziol,
Henryk Turski,
Marcin Siekacz,
Krzesimir Szkudlarek,
Lukasz Janicki,
Sebastian Zolud,
Robert Kudrawiec,
Tadeusz Suski,
Czeslaw Skierbiszewski
Abstract:
There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet and blue colors but fall short for longer emission wavelengths due to the quantum confined Stark effect (QCSE). In this paper we present a design of the active region based on wide InGaN quantum wells (QWs) which do not…
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There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet and blue colors but fall short for longer emission wavelengths due to the quantum confined Stark effect (QCSE). In this paper we present a design of the active region based on wide InGaN quantum wells (QWs) which do not suffer from QCSE and profit from an enhancement in the internal quantum efficiency (IQE). The design exploits highly efficient optical transitions between excited states. It is shown that, counterintuitively, the devices with higher InGaN composition exhibit a higher enhancement in IQE. Experimental evidence is provided showing a gradual change in the nature of the optical transition with increasing thickness of the QW. Moreover, optical gain in long wavelength LDs incorporating standard and wide QWs is investigated to show the utilization of our concept.
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Submitted 17 October, 2018;
originally announced October 2018.
