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Ultrafast Graphene Light Emitter
Authors:
Young Duck Kim,
Yuanda Gao,
Ren-Jye Shiue,
Lei Wang,
Ozgur Burak Aslan,
Myung-Ho Bae,
Hyungsik Kim,
Dongjea Seo,
Heon-Jin Choi,
Suk Hyun Kim,
Andrei Nemilentsau,
Tony Low,
Cheng Tan,
Dmitri K. Efetov,
Takashi Taniguchi,
Kenji Watanabe,
Kenneth L. Shepard,
Tony F. Heinz,
Dirk Englund,
James Hone
Abstract:
Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achie…
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Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.
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Submitted 24 October, 2017;
originally announced October 2017.
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Parametric Optomechanical Oscillations in Two-Dimensional Slot-Type High-Q Photonic Crystal Cavities
Authors:
Jiangjun Zheng,
Ying Li,
Mehmet Sirin Aras,
Aaron Stein,
Ken L. Shepard,
Chee Wei Wong
Abstract:
We experimentally demonstrate an optomechanical cavity based on an air-slot photonic crystal cavity with optical quality factor Qo=4.2\times10^4 and a small modal volume of 0.05 cubic wavelengths. The optical mode is coupled with the in-plane mechanical modes with frequencies up to hundreds of MHz. The fundamental mechanical mode shows a frequency of 65 MHz and a mechanical quality factor of 376.…
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We experimentally demonstrate an optomechanical cavity based on an air-slot photonic crystal cavity with optical quality factor Qo=4.2\times10^4 and a small modal volume of 0.05 cubic wavelengths. The optical mode is coupled with the in-plane mechanical modes with frequencies up to hundreds of MHz. The fundamental mechanical mode shows a frequency of 65 MHz and a mechanical quality factor of 376. The optical spring effect, optical damping and amplification are observed with a large experimental optomechanical coupling rate gom/2pi of 154 GHz/nm, corresponding to a vacuum optomechanical coupling rate g*/2pi of 707 kHz. With sub-mW or less input power levels, the cavity exhibits strong parametric oscillations. The phase noise of the photonic crystal optomechanical oscillator is also measured.
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Submitted 5 May, 2012;
originally announced May 2012.
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Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition
Authors:
Charlton J. Chen,
Chad A. Husko,
Inanc Meric,
Ken L. Shepard,
Chee Wei Wong,
William M. J. Green,
Yurii A. Vlasov,
Solomon Assefa
Abstract:
We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (red-shift of 140 +/- 10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110 +/- 30 pm per monolayer…
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We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (red-shift of 140 +/- 10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110 +/- 30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive post-fabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.
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Submitted 4 December, 2009;
originally announced December 2009.
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Multiple Charge State Beam Acceleration at Atlas
Authors:
P. N. Ostroumov,
R. C. Pardo,
G. P. Zinkann,
K. W. Shepard,
J. A. Nolen
Abstract:
A test of the acceleration of multiple charge-state uranium beams was performed at the ATLAS accelerator. A 238U+26 beam was accelerated in the ATLAS PII linac to 286 MeV (~1.2 MeV/u) and stripped in a carbon foil located 0.5 m from the entrance of the ATLAS Booster section. A 58Ni9+ 'guide' beam from the tandem injector was used to tune the Booster for 238U+38. All charge states from the stripp…
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A test of the acceleration of multiple charge-state uranium beams was performed at the ATLAS accelerator. A 238U+26 beam was accelerated in the ATLAS PII linac to 286 MeV (~1.2 MeV/u) and stripped in a carbon foil located 0.5 m from the entrance of the ATLAS Booster section. A 58Ni9+ 'guide' beam from the tandem injector was used to tune the Booster for 238U+38. All charge states from the stripping were injected into the booster and accelerated. Up to 94% of the beam was accelerated through the Booster linac, with losses mostly in the lower charge states. The measured beam properties of each charge state and a comparison to numerical simulations are reported in this paper.
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Submitted 19 August, 2000;
originally announced August 2000.
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Heavy-Ion Beam Acceleration of Two-Charge States from an Ecr Ion Source
Authors:
P. N. Ostroumov,
K. W. Shepard,
V. N. Aseev,
A. A. Kolomiets
Abstract:
This paper describes a design for the front end of a superconducting (SC) ion linac which can accept and simultaneously accelerate two charge states of uranium from an ECR ion source. This mode of operation increases the beam current available for the heaviest ions by a factor of two. We discuss the 12 MeV/u prestripper section of the Rare Isotope Accelerator (RIA) driver linac including the LEB…
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This paper describes a design for the front end of a superconducting (SC) ion linac which can accept and simultaneously accelerate two charge states of uranium from an ECR ion source. This mode of operation increases the beam current available for the heaviest ions by a factor of two. We discuss the 12 MeV/u prestripper section of the Rare Isotope Accelerator (RIA) driver linac including the LEBT, RFQ, MEBT and SC sections, with a total voltage of 112 MV. The LEBT consists of two bunchers and electrostatic quadrupoles. The fundamental frequency of both bunchers is half of the RFQ frequency. The first buncher is a multiharmonic buncher, designed to accept more than 80% of each charge state and to form bunches of extremely low longitudinal emittance (rms emittance is lower than 0.2 keV/u nsec) at the output of the RFQ. The second buncher is located directly in front of the RFQ and matches the velocity of each charge-state bunch to the design input velocity of the RFQ. We present full 3D simulations of a two-charge-state uranium beam including space charge forces in the LEBT and RFQ, realistic distributions of all electric and magnetic fields along the whole prestripper linac, and the effects of errors, evaluated for several design options for the prestripper linac. The results indicate that it is possible to accelerate two charge states while keeping emittance growth within tolerable limits.
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Submitted 19 August, 2000;
originally announced August 2000.
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Multiple-Charge Beam Dynamics in an Ion Linac
Authors:
P. N. Ostroumov,
J. A. Nolen,
K. W. Shepard
Abstract:
There is demand for the construction of a medium-energy ion linear accelerator based on superconducting rf (SRF) technology. It must be capable of producing several hundred kilowatts of CW beams ranging from protons to uranium. A considerable amount of power is required in order to generate intense beams of rare isotopes for subsequent acceleration. At present, however, the beam power available…
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There is demand for the construction of a medium-energy ion linear accelerator based on superconducting rf (SRF) technology. It must be capable of producing several hundred kilowatts of CW beams ranging from protons to uranium. A considerable amount of power is required in order to generate intense beams of rare isotopes for subsequent acceleration. At present, however, the beam power available for the heavier ions would be limited by ion source performance. To overcome this limit, we have studied the possibility of accelerating multiple-charge-state (multi-Q) beams through a linac. We show that such operation is made feasible by the large transverse and longitudinal acceptance which can be obtained in a linac using superconducting cavities. Multi-Q operation provides not only a substantial increase in beam current, but also enables the use of two strippers, thus reducing the size of linac required. Since the superconducting (SC) linac operates in CW mode, space charge effects are essentially eliminated except in the ECR/RFQ region. Therefore an effective emittance growth due to the multi-charge beam acceleration can be minimized.
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Submitted 19 August, 2000;
originally announced August 2000.
