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Optical characterization of deep level defects in n-type Al$_x$In$_y$Ga$_{1-x-y}$P for development of solid-state photomultiplier analogs
Authors:
Andrew M. Armstrong,
Evan M. Anderson,
Lisa N. Caravello,
Eduardo Garcia,
Joseph P. Klesko,
Samuel D. Hawkins,
Eric A. Shaner,
John F. Klem,
Aaron J. Muhowski
Abstract:
Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but there exists a tradeoff between maximizing the band gap while remaining sensitive to the wavelength of interest, and minimizing the incorporation of new defects by growing not-yet-optimized alloys. We present a se…
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Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but there exists a tradeoff between maximizing the band gap while remaining sensitive to the wavelength of interest, and minimizing the incorporation of new defects by growing not-yet-optimized alloys. We present a series of capacitance-based measurements, including deep level optical spectroscopy, steady-state photocapacitance and illuminated capacitance-voltage, on photodiodes with lightly \textit{n}-type Al$_x$In$_y$Ga$_{1-x-y}$P absorber regions. Several deep levels are identified, including one near midgap. While the inclusion of aluminum increases each trap density by approximately 10x, the hole capture cross section also appears to decrease, suggesting that Shockley-Read-Hall dark currents may be suppressed. These materials may be good candidates for development into silicon photomultiplier analogs with wider bandgap for scintillator applications.
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Submitted 2 September, 2025;
originally announced September 2025.
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Coherent phenomena in terahertz 2D plasmonic structures: strong coupling, plasmonic crystals, and induced transparency by coupling of localized modes
Authors:
Gregory C. Dyer,
Gregory R. Aizin,
S. James Allen,
Albert D. Grine,
Don Bethke,
John L. Reno,
Eric A. Shaner
Abstract:
The device applications of plasmonic systems such as graphene and two dimensional electron gases (2DEGs) in III-V heterostructures include terahertz detectors, mixers, oscillators and modulators. These two dimensional (2D) plasmonic systems are not only well-suited for device integration, but also enable the broad tunability of underdamped plasma excitations via an applied electric field. We prese…
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The device applications of plasmonic systems such as graphene and two dimensional electron gases (2DEGs) in III-V heterostructures include terahertz detectors, mixers, oscillators and modulators. These two dimensional (2D) plasmonic systems are not only well-suited for device integration, but also enable the broad tunability of underdamped plasma excitations via an applied electric field. We present demonstrations of the coherent coupling of multiple voltage tuned GaAs/AlGaAs 2D plasmonic resonators under terahertz irradiation. By utilizing a plasmonic homodyne mixing mechanism to downconvert the near field of plasma waves to a DC signal, we directly detect the spectrum of coupled plasmonic micro-resonator structures at cryogenic temperatures. The 2DEG in the studied devices can be interpreted as a plasmonic waveguide where multiple gate terminals control the 2DEG kinetic inductance. When the gate tuning of the 2DEG is spatially periodic, a one-dimensional finite plasmonic crystal forms. This results in a subwavelength structure, much like a metamaterial element, that nonetheless Bragg scatters plasma waves from a repeated crystal unit cell. A 50% in situ tuning of the plasmonic crystal band edges is observed. By introducing gate-controlled defects or simply terminating the lattice, localized states arise in the plasmonic crystal. Inherent asymmetries at the finite crystal boundaries produce an induced transparency-like phenomenon due to the coupling of defect modes and crystal surface states known as Tamm states. The demonstrated active control of coupled plasmonic resonators opens previously unexplored avenues for sensitive direct and heterodyne THz detection, planar metamaterials, and slow-light devices.
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Submitted 10 May, 2016;
originally announced May 2016.
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Interferometric Measurement of Far Infrared Plasmons via Resonant Homodyne Mixing
Authors:
Gregory C. Dyer,
Gregory R. Aizin,
S. James Allen,
Albert D. Grine,
Don Bethke,
John L. Reno,
Eric A. Shaner
Abstract:
We present an electrically tunable terahertz two dimensional plasmonic interferometer with an integrated detection element that down converts the terahertz fields to a DC signal. The integrated detector utilizes a resonant plasmonic homodyne mixing mechanism that measures the component of the plasma waves in-phase with an excitation field functioning as the local oscillator. Plasmonic interferomet…
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We present an electrically tunable terahertz two dimensional plasmonic interferometer with an integrated detection element that down converts the terahertz fields to a DC signal. The integrated detector utilizes a resonant plasmonic homodyne mixing mechanism that measures the component of the plasma waves in-phase with an excitation field functioning as the local oscillator. Plasmonic interferometers with two independently tuned paths are studied. These devices demonstrate a means for developing a spectrometer-on-a-chip where the tuning of electrical length plays a role analogous to that of physical path length in macroscopic Fourier transform interferometers.
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Submitted 10 May, 2016;
originally announced May 2016.
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Induced transparency by coupling of Tamm and defect states in tunable terahertz plasmonic crystals
Authors:
Gregory C. Dyer,
Gregory R. Aizin,
S. James Allen,
Albert D. Grine,
Don Bethke,
John L. Reno,
Eric A. Shaner
Abstract:
Photonic crystals and metamaterials have emerged as two classes of tailorable materials that enable precise control of light. Plasmonic crystals, which can be thought of as photonic crystals fabricated from plasmonic materials, Bragg scatter incident electromagnetic waves from a repeated unit cell. However, plasmonic crystals, like metamaterials, are composed of subwavelength unit cells. Here, we…
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Photonic crystals and metamaterials have emerged as two classes of tailorable materials that enable precise control of light. Plasmonic crystals, which can be thought of as photonic crystals fabricated from plasmonic materials, Bragg scatter incident electromagnetic waves from a repeated unit cell. However, plasmonic crystals, like metamaterials, are composed of subwavelength unit cells. Here, we study terahertz plasmonic crystals of several periods in a two dimensional electron gas. This plasmonic medium is both extremely subwavelength ($\approx λ/100$) and reconfigurable through the application of voltages to metal electrodes. Weakly localized crystal surface states known as Tamm states are observed. By introducing an independently controlled plasmonic defect that interacts with the Tamm states, we demonstrate a frequency agile electromagnetically induced transparency phenomenon. The observed 50% ${\it in-situ}$ tuning of the plasmonic crystal band edges should be realizable in materials such as graphene to actively control the plasmonic crystal dispersion in the infrared.
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Submitted 10 May, 2016;
originally announced May 2016.
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Inducing an Incipient Terahertz Finite Plasmonic Crystal in Coupled Two Dimensional Plasmonic Cavities
Authors:
Gregory C. Dyer,
Gregory R. Aizin,
Sascha Preu,
N. Q. Vinh,
S. James Allen,
John L. Reno,
Eric A. Shaner
Abstract:
We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two-dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased devic…
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We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two-dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure.
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Submitted 10 May, 2016;
originally announced May 2016.
