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Stimulated Raman Scattering in Nonlinear Silicon Nanophotonic Waveguides: Theory and Applications in Photonic Integrated Circuits
Authors:
Abdurrahman Javid Shaikh,
Othman Sidek
Abstract:
Photonics caught world attention since channel capacity limit of metallic interconnects approached due to research and design in high speed digital processors. Use of dielectrics, instead, suitable for light propagation was more attractive due to its extremely wide bandwidth. Many of the devices, both active and passive, have been demonstrated using these insulating materials. Due to its excellent…
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Photonics caught world attention since channel capacity limit of metallic interconnects approached due to research and design in high speed digital processors. Use of dielectrics, instead, suitable for light propagation was more attractive due to its extremely wide bandwidth. Many of the devices, both active and passive, have been demonstrated using these insulating materials. Due to its excellent optical characteristics, established fabrication history, and cheaper throughput, silicon found its place in photonics arena. However, due to its indirect band structure, efficient light sources are not possible using silicon as the base material. Nevertheless, techniques such as stimulated Raman scattering and third-harmonic generation have made it possible to avoid this natural hurdle in the path of silicon as a light source. This paper reviews basic theory of stimulated Raman scattering, its applications in the context of silicon based photonic integrated circuits and describes ways to improve this nonlinear effect. This paper also covers few of the most important demonstrations of stimulated Raman scattering published in literature from the last decade.
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Submitted 3 December, 2024;
originally announced December 2024.
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Full 3D Model of Modulation Efficiency of Complementary Metal Oxide Semiconductor (CMOS) Compatible, Submicron, Interleaved Junction Optical Phase Shifters
Authors:
Abdurrahman Javid Shaikh,
Fauzi Packeer,
Mirza Muhammad Ali Baig,
Othman Sidek
Abstract:
Performance optimization associated with optical modulators requires reasonably accurate predictive models for key figures of merit. Interleaved PN-junction topology offers the maximum mode/junction overlap and is the most efficient modulator in depletion-mode of operation. Due to its structure, the accurate modelling process must be fully three-dimensional, which is a nontrivial computational pro…
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Performance optimization associated with optical modulators requires reasonably accurate predictive models for key figures of merit. Interleaved PN-junction topology offers the maximum mode/junction overlap and is the most efficient modulator in depletion-mode of operation. Due to its structure, the accurate modelling process must be fully three-dimensional, which is a nontrivial computational problem. This paper presents a rigorous 3D model for the modulation efficiency of silicon-on-insulator interleaved junction optical phase modulators with submicron dimensions. Solution of Drift-Diffusion and Poisson equations were carried out on 3D finite-element-mesh and Maxwell equations were solved using Finite-Difference-Time-Domain (FDTD) method on 3D Yee-cells. Whole of the modelling process has been detailed and all the coefficients required in the model are presented. Model validation suggests < 10% RMS error.
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Submitted 2 December, 2024;
originally announced December 2024.
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Self Phase Modulation and Cross Phase Modulation in Nonlinear Silicon Waveguides for On-Chip Optical Networks -- A Tutorial
Authors:
Abdurrahman Javid Shaikh,
Othman Sidek,
Fauzi Packeer
Abstract:
Silicon is a nonlinear material and optics based on silicon makes use of these nonlinearities to realize various functionalities required for on-chip communications. This article describes foundations of these nonlinearities in silicon at length. Particularly, self phase modulation and cross phase modulation in the context of integrated on-board and on-chip communications are presented. Important…
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Silicon is a nonlinear material and optics based on silicon makes use of these nonlinearities to realize various functionalities required for on-chip communications. This article describes foundations of these nonlinearities in silicon at length. Particularly, self phase modulation and cross phase modulation in the context of integrated on-board and on-chip communications are presented. Important published results and principles of working of these nonlinearities are presented in considerable detail for non-expert readers.
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Submitted 2 December, 2024;
originally announced December 2024.
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Confinement Specific Design of SOI Rib Waveguides with Submicron Dimensions and Single Mode Operation
Authors:
Abdurrahman Javid Shaikh,
Abdul Ghani Abro,
Mirza Muhammad Ali Baig,
Muhammad Adeel Ahmad Siddiqui,
Syed Mohsin Abbas
Abstract:
Full-vectorial finite difference method with perfectly matched layers boundaries is used to identify the single mode operation region of submicron rib waveguides fabricated using sili-con-on-insulator material system. Achieving high mode power confinement factors is emphasized while maintaining the single mode operation. As opposed to the case of large cross-section rib waveguides, theoretical sin…
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Full-vectorial finite difference method with perfectly matched layers boundaries is used to identify the single mode operation region of submicron rib waveguides fabricated using sili-con-on-insulator material system. Achieving high mode power confinement factors is emphasized while maintaining the single mode operation. As opposed to the case of large cross-section rib waveguides, theoretical single mode conditions have been demonstrated to hold for sub-micron waveguides with accuracy approaching 100%. Both, the deeply and the shallowly etched rib waveguides have been considered and the single mode condition for entire sub-micrometer range is presented while adhering to design specific mode confinement requirements.
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Submitted 2 December, 2024;
originally announced December 2024.
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Making Silicon Emit Light Using Third Harmonic Generation
Authors:
Abdurrahman Javid Shaikh,
Othman Sidek
Abstract:
Despite its excellent performance in microelectronic industry, silicon was not able to perform well in photonic devices arena. This is because the silicon has never been a good optical source mainly due to its indirect band gap structure. Many of the device functionalities in silicon have been reported, with an exception of, until recently, a reliable optical source. Silicon is a nonlinear materia…
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Despite its excellent performance in microelectronic industry, silicon was not able to perform well in photonic devices arena. This is because the silicon has never been a good optical source mainly due to its indirect band gap structure. Many of the device functionalities in silicon have been reported, with an exception of, until recently, a reliable optical source. Silicon is a nonlinear material which makes use of its nonlinearities to realize various functionalities. This paper presents a theoretical treatment of generating and enhancing third-harmonic field which may be used as optical source, crystal state monitoring and all-optical signal processing applications.
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Submitted 13 November, 2024;
originally announced November 2024.
