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Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution
Authors:
Yangbo Zhang,
Wenda Fan,
Jiliang Yang,
Hao Guan,
Qi Zhang,
Xi Qin,
Changkui Duan,
Gabriele G. de Boo,
Brett C. Johnson,
Jeffrey C. McCallum,
Matthew J. Sellars,
Sven Rogge,
Chunming Yin,
Jiangfeng Du
Abstract:
Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the p…
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Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionization detection. With this technique, the optically excited state lifetime of a single Er$^{3+}$ ion in a Si nano-transistor is measured for the first time to be 0.49 $\pm$ 0.04 $μ$s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centers in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.
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Submitted 1 December, 2022;
originally announced December 2022.
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Negative refractive index in dielectric crystals containing stoichiometric rare-earth ions
Authors:
Matthew C. Berrington,
Henrik M. Rønnow,
Matthew J. Sellars,
Rose L. Ahlefeldt
Abstract:
We investigate the prospect of achieving negative permittivity and permeability at optical frequencies in a dielectric crystal containing stoichiometric rare-earth ions. We derive the necessary transition linewidth, ion density and electric and magnetic oscillator strengths using a simplified model of non-interacting dipoles. We identify Erbium crystals in a magnetically ordered phase as the most…
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We investigate the prospect of achieving negative permittivity and permeability at optical frequencies in a dielectric crystal containing stoichiometric rare-earth ions. We derive the necessary transition linewidth, ion density and electric and magnetic oscillator strengths using a simplified model of non-interacting dipoles. We identify Erbium crystals in a magnetically ordered phase as the most promising material to meet these conditions, and describe initial optical measurements of two potential candidates, \ercl{} and ${}^7$\lierf{}, which display linewidths of 3~GHz and 250~MHz, respectively. The properties of ${}^7$\lierf{} satisfied our criterion for negative permeability.
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Submitted 5 May, 2022;
originally announced May 2022.
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Complete crystal field calculation of Zeeman-hyperfine splittings in europium
Authors:
Kieran M. Smith,
Michael F. Reid,
Matthew J. Sellars,
Rose L. Ahlefeldt
Abstract:
Computational crystal-field models have provided consistent models of both electronic and Zeeman-hyperfine structure for several rare earth ions. These techniques have not yet been applied to the Zeeman-hyperfine structure of Eu$^{3+}$ because modeling the structure of the $J=0$ singlet levels in Eu$^{3+}$ requires inclusion of the commonly omitted lattice electric quadrupole and nuclear Zeeman in…
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Computational crystal-field models have provided consistent models of both electronic and Zeeman-hyperfine structure for several rare earth ions. These techniques have not yet been applied to the Zeeman-hyperfine structure of Eu$^{3+}$ because modeling the structure of the $J=0$ singlet levels in Eu$^{3+}$ requires inclusion of the commonly omitted lattice electric quadrupole and nuclear Zeeman interactions. Here, we include these terms in a computational model to fit the crystal field levels and the Zeeman-hyperfine structure of the $^7F_0$ and $^5D_0$ states in three Eu$^{3+}$ sites: the C$_{4v}$ and C$_{3v}$ sites in CaF$_2$ and the C$_2$ site in EuCl$_3$.6H$_2$O. Close fits are obtained for all three sites which are used to resolve ambiguities in previously published parameters, including quantifying the anomalously large crystal-field-induced state mixing in the C$_{3v}$ site and determining the signs of Zeeman-hyperfine parameters in all three sites. We show that this model allows accurate prediction of properties for Eu$^{3+}$ important for quantum information applications of these ions, such as relative transition strengths. The model could be used to improve crystal field calculations for other non-Kramers singlet states. We also present a spin Hamiltonian formalism without the normal assumption of no $J$ mixing, suitable for other rare earth ion energy levels where this effect is important.
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Submitted 27 October, 2021; v1 submitted 8 October, 2021;
originally announced October 2021.
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Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection
Authors:
Ian R. Berkman,
Alexey Lyasota,
Gabriele G. de Boo,
John G. Bartholomew,
Brett C. Johnson,
Jeffrey C. McCallum,
Bin-Bin Xu,
Shouyi Xie,
Rose L. Ahlefeldt,
Matthew J. Sellars,
Chunming Yin,
Sven Rogge
Abstract:
We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonanc…
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We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonances have been extracted, showing that 5% of the resonances are within 1 GHz of our electrically detected resonances and that the optical lifetimes range from 0.5 ms up to 1.5 ms. We observed inhomogeneous broadening of less than 400 MHz and an upper bound on the homogeneous linewidth of 1.4 MHz and 0.75 MHz for two separate resonances, which is a reduction of more than an order of magnitude observed to date. These narrow optical transition properties show that Er in Si is an excellent candidate for future quantum information and communication applications.
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Submitted 16 August, 2021;
originally announced August 2021.
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Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators
Authors:
Bin-Bin Xu,
Gabriele G. de Boo,
Brett C. Johnson,
Miloš Rančić,
Alvaro Casas Bedoya,
Blair Morrison,
Jeffrey C. McCallum,
Benjamin J. Eggleton,
Matthew J. Sellars,
Chunming Yin,
Sven Rogge
Abstract:
Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function…
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Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to 10$^5$. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform.
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Submitted 11 October, 2020;
originally announced November 2020.
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Echo-Based Quantum Memory
Authors:
G. T. Campbell,
K. R. Ferguson,
M. J. Sellars,
B. C. Buchler,
P. K. Lam
Abstract:
In this book chapter we review photon echo based schemes for optical quantum memory. We outline the basic principles of the Atomic Frequency Comb (AFC), Gradient Echo Memory (GEM) and Rephased Amplified Spontaneous Emission (RASE) protocols. We describe the properties of the rare-earth ion and gaseous vapours ensembles that have been used to carry out experimental demonstrations. These experiments…
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In this book chapter we review photon echo based schemes for optical quantum memory. We outline the basic principles of the Atomic Frequency Comb (AFC), Gradient Echo Memory (GEM) and Rephased Amplified Spontaneous Emission (RASE) protocols. We describe the properties of the rare-earth ion and gaseous vapours ensembles that have been used to carry out experimental demonstrations. These experiments are then discussed with reference to relevant classical and quantum performance criteria.
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Submitted 12 February, 2019;
originally announced February 2019.
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Single rare-earth ions as atomic-scale probes in ultra-scaled transistors
Authors:
Qi Zhang,
Guangchong Hu,
Gabriele G. de Boo,
Milos Rancic,
Brett C. Johnson,
Jeffrey C. McCallum,
Jiangfeng Du,
Matthew J. Sellars,
Chunming Yin,
Sven Rogge
Abstract:
Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local…
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Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local electric field and strain. Here we study the spectral response of single erbium ions to applied electric field and strain in a silicon ultra-scaled transistor. Stark shifts induced by both the overall electric field and the local charge environment are observed. Further, changes in strain smaller than $3\times 10^{-6}$ are detected, which is around two orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for non-destructive 3D mapping of the local strain and electric field in the channel of ultra-scaled transistors, using the single erbium ions as ultra-sensitive atomic probes.
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Submitted 5 March, 2018;
originally announced March 2018.
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Ultra-narrow optical inhomogeneous linewidth in a stoichiometric rare earth crystal
Authors:
R. L. Ahlefeldt,
M. R. Hush,
M. J. Sellars
Abstract:
We have obtained a low optical inhomogeneous linewidth of 25 MHz in the stoichiometric rare earth crystal EuCl3 .6H2 O by isotopically purifying the crystal in 35 Cl. With this linewidth, an important limit for stoichiometric rare earth crystals is surpassed: the hyperfine structure of 153Eu is spectrally resolved, allowing the whole population of 153Eu3+ ions to be prepared in the same hyperfine…
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We have obtained a low optical inhomogeneous linewidth of 25 MHz in the stoichiometric rare earth crystal EuCl3 .6H2 O by isotopically purifying the crystal in 35 Cl. With this linewidth, an important limit for stoichiometric rare earth crystals is surpassed: the hyperfine structure of 153Eu is spectrally resolved, allowing the whole population of 153Eu3+ ions to be prepared in the same hyperfine state using hole burning techniques. This material also has a very high optical density and can have long coherence times when deuterated. This combination of properties offers new prospects for quantum information applications. We consider two of these, quantum memories and quantum many body studies. We detail the improvements in the performance of current memory protocols possible in these high optical depth crystals, and how certain memory protocols, such as off-resonant Raman memories, can be implemented for the first time in a solid state system. We explain how the strong excitation-induced interactions observed in this material resemble those seen in Rydberg systems, and describe how these interactions can lead to quantum many-body states that could be observed using standard optical spectroscopy techniques.
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Submitted 25 July, 2016; v1 submitted 19 January, 2016;
originally announced January 2016.
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Reducing decoherence in optical and spin transitions in rare-earth-ion doped materials
Authors:
D. L. McAuslan,
J. G. Bartholomew,
M. J. Sellars,
J. J. Longdell
Abstract:
In many important situations the dominant dephasing mechanism in cryogenic rare-earth-ion doped systems is due to magnetic field fluctuations from spins in the host crystal. Operating at a magnetic field where a transition has a zero first-order-Zeeman (ZEFOZ) shift can greatly reduce this dephasing. Here we identify the location of transitions with zero first-order Zeeman shift for optical transi…
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In many important situations the dominant dephasing mechanism in cryogenic rare-earth-ion doped systems is due to magnetic field fluctuations from spins in the host crystal. Operating at a magnetic field where a transition has a zero first-order-Zeeman (ZEFOZ) shift can greatly reduce this dephasing. Here we identify the location of transitions with zero first-order Zeeman shift for optical transitions in Pr3+:YAG and for spin transitions in Er3+:Y2SiO5. The long coherence times that ZEFOZ would enable would make Pr3+:YAG a strong candidate for achieving the strong coupling regime of cavity QED, and would be an important step forward in creating long-lived telecommunications wavelength quantum memories in Er3+:Y2SiO5. This work relies mostly on published spin Hamiltonian parameters but Raman heterodyne spectroscopy was performed on Pr3+:YAG to measure the parameters for the excited state.
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Submitted 21 March, 2012; v1 submitted 22 January, 2012;
originally announced January 2012.
