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Electrical excitation of color centers in phosphorus-doped diamond Schottky diodes
Authors:
Florian Sledz,
Igor A. Khramtsov,
Assegid M. Flatae,
Stefano Lagomarsino,
Silvio Sciortino,
Shannon S. Nicley,
Rozita Rouzbahani,
Paulius Pobedinskas,
Tianxiao Guo,
Xin Jiang,
Paul Kienitz,
Peter Haring Bolivar,
Ken Haenen,
Dmitry Yu. Fedyanin,
Mario Agio
Abstract:
A robust quantum light source operating upon electrical injection at ambient conditions is desirable for practical implementation of quantum technologies, such as quantum key distribution or metrology. Color centers in diamond are promising candidates as they are photostable emitters at room and elevated temperatures. The possibility of their electrical excitation has already been demonstrated wit…
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A robust quantum light source operating upon electrical injection at ambient conditions is desirable for practical implementation of quantum technologies, such as quantum key distribution or metrology. Color centers in diamond are promising candidates as they are photostable emitters at room and elevated temperatures. The possibility of their electrical excitation has already been demonstrated within p-i-n diodes. However, this requires the growth of complex diamond structures. In contrast to these conventional approaches, we demonstrate the emission of color centers under electrical pumping in a novel Schottky diode configuration based on hydrogen passivated n-type diamond, which holds promise for integrated single-photon emitting devices based on color centers in diamond.
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Submitted 10 October, 2024; v1 submitted 2 August, 2024;
originally announced August 2024.
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Scalable creation of silicon-vacancy color centers in diamond by ion implantation through a 1-$μ$m pinhole
Authors:
L. Hunold,
S. Lagomarsino,
A. M. Flatae,
H. Kambalathmana,
F. Sledz,
S. Sciortino,
N. Gelli,
L. Giuntini,
M. Agio
Abstract:
The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, we present the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond by ion implantation. The lateral position of the SiV is spatially controlled by a 1-$μ$m pinhole placed in front of the sample, which can be moved nanometer pr…
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The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, we present the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond by ion implantation. The lateral position of the SiV is spatially controlled by a 1-$μ$m pinhole placed in front of the sample, which can be moved nanometer precise using a piezo stage. The initial implantation position is controlled by monitoring the ion beam position with a camera. Hereby, silicon ions are implanted at the desired spots in an area comparable to the diffraction limit. We discuss the role of ions scattered by the pinhole and the activation yield of the SiV color centers for the creation of single quantum emitters.
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Submitted 29 January, 2021;
originally announced February 2021.
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Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures
Authors:
F. Sledz,
S. Piccolomo,
A. M. Flatae,
S. Lagomarsino,
R. Rechenberg,
M. F. Becker,
S. Sciortino,
N. Gelli,
I. A. Khramtsov,
D. Yu. Fedyanin,
G. Speranza,
L. Giuntini,
M. Agio
Abstract:
Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion of phosphorus. Here, we investigate the photoluminescence signal of the nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond as a func…
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Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion of phosphorus. Here, we investigate the photoluminescence signal of the nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond as a function of temperature starting from ambient conditions up to about 100$^\circ$ Celsius, focusing on the zero-phonon line (ZPL). We find that the wavelength and width of the ZPL of the two color centers exhibit a comparable dependence on temperature, despite the strong difference in the photoluminescence spectra. Moreover, the temperature sensitivity of the ZPL of the silicon-vacancy center is not significantly affected by phosphorus-doping, as we infer by comparison with silicon-vacancy centers in electronic-grade single-crystal diamond.
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Submitted 14 January, 2021;
originally announced January 2021.
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Optical properties of silicon-implanted polycrystalline diamond membranes
Authors:
H. Kambalathmana,
A. M. Flatae,
L. Hunold,
F. Sledz,
J. Müller,
M. Hepp,
P. Schmuki,
M. S. Killian,
S. Lagomarsino,
N. Gelli,
S. Sciortino,
L. Giuntini,
E. Wörner,
C. Wild,
B. Butz,
M. Agio
Abstract:
We investigate the optical properties of polycrystalline diamond membranes containing silicon-vacancy (SiV) color centers in combination with other nano-analytical techniques. We analyze the correlation between the Raman signal, the SiV emission, and the background luminescence in the crystalline grains and in the grain boundaries, identifying conditions for the addressability of single SiV center…
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We investigate the optical properties of polycrystalline diamond membranes containing silicon-vacancy (SiV) color centers in combination with other nano-analytical techniques. We analyze the correlation between the Raman signal, the SiV emission, and the background luminescence in the crystalline grains and in the grain boundaries, identifying conditions for the addressability of single SiV centers. Moreover, we perform a scanning transmission electron microscopy (STEM) analysis, which associates the microscopic structure of the membranes and the evolution of the diamond crystal along the growth direction with the photoluminescence properties, as well as a time-of-flight secondary ion mass spectrometry (ToF-SIMS) to address the distribution of silicon in implanted and un-implanted membranes. The results of the STEM and ToF-SIMS studies are consistent with the outcome of the optical measurements and provide useful insight into the preparation of polycrystalline samples for quantum nano-optics.
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Submitted 10 November, 2020;
originally announced November 2020.
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Silicon-vacancy color centers in phosphorus-doped diamond
Authors:
Assegid Mengistu Flatae,
Stefano Lagomarsino,
Florian Sledz,
Navid Soltani,
Shannon S. Nicley,
Ken Haenen,
Robert Rechenberg,
Michael F. Becker,
Silvio Sciortino,
Nicla Gelli,
Lorenzo Giuntini,
Francesco Taccetti,
Mario Agio
Abstract:
The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this stu…
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The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at the low Si-ion implantation fluences.
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Submitted 19 December, 2019;
originally announced December 2019.
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Recent Results from Polycrystalline CVD Diamond Detectors
Authors:
RD42 Collaboration,
L. Bäni,
A. Alexopoulos,
M. Artuso,
F. Bachmair,
M. Bartosik,
H. Beck,
V. Bellini,
V. Belyaev,
B. Bentele,
A. Bes,
J. -M. Brom,
M. Bruzzi,
G. Chiodini,
D. Chren,
V. Cindro,
G. Claus,
J. Collot,
J. Cumalat,
A. Dabrowski,
R. D'Alessandro,
D. Dauvergne,
W. de Boer,
C. Dorfer,
M. Dünser
, et al. (87 additional authors not shown)
Abstract:
Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse hei…
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Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$.
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Submitted 16 October, 2019;
originally announced October 2019.
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Highly efficient light extraction and directional emission from diamond color centers using planar Yagi-Uda antennas
Authors:
Hossam Galal,
Assegid M. Flatae,
Stefano Lagomarsino,
Gregor Schulte,
Christoph Wild,
Eckhard Wörner,
Nicla Gelli,
Silvio Sciortino,
Holger Schönherr,
Lorenzo Giuntini,
Mario Agio
Abstract:
Color centers in diamond represent a promising platform for developing solid-state single-photon sources and spin-photon interfaces as building blocks for photonics-based quantum technologies. However, although they exhibit a combination of features that make them so attractive, they also suffer from limited control in their emission properties, such as brightness, directionality, and polarization…
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Color centers in diamond represent a promising platform for developing solid-state single-photon sources and spin-photon interfaces as building blocks for photonics-based quantum technologies. However, although they exhibit a combination of features that make them so attractive, they also suffer from limited control in their emission properties, such as brightness, directionality, and polarization to cite a few. In this paper we present implementations and the experimental investigation of planar Yagi-Uda antennas in diamond, demonstrating highly efficient light extraction and directional emission from silicon-vacancy color centers created in thin diamond membranes.
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Submitted 8 May, 2019;
originally announced May 2019.
