A 3.5-THz, x6-Harmonic, Single-Ended Schottky Diode Mixer for Frequency Stabilization of Quantum-Cascade Lasers
Authors:
Divya Jayasankar,
Vladimir Drakinskiy,
Nick Rothbart,
Heiko Richter,
Xiang Lü,
Lutz Schrottke,
Holger T. Grahn,
Martin Wienold,
Heinz-Wilhelm Hübers,
Peter Sobis,
Jan Stake
Abstract:
Efficient and compact frequency converters are essential for frequency stabilization of terahertz sources. In this paper, we present a 3.5-THz, x6-harmonic, integrated Schottky diode mixer operating at room temperature. The designed frequency converter is based on a single-ended, planar Schottky diode with a sub-micron anode contact area defined on a suspended 2-$μ$m ultra-thin GaAs substrate. The…
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Efficient and compact frequency converters are essential for frequency stabilization of terahertz sources. In this paper, we present a 3.5-THz, x6-harmonic, integrated Schottky diode mixer operating at room temperature. The designed frequency converter is based on a single-ended, planar Schottky diode with a sub-micron anode contact area defined on a suspended 2-$μ$m ultra-thin GaAs substrate. The dc-grounded anode pad was combined with the radio frequency E-plane probe, which resulted in an electrically compact circuit. At 200 MHz intermediate frequency, a mixer conversion loss of about 59 dB is measured and resulting in a 40 dB signal-to-noise ratio for phase locking 3.5-THz quantum-cascade laser. Using a quasi-static diode model combined with electromagnetic simulations, good agreement with the measured results was obtained. Harmonic frequency converters without the need of cryogenic cooling will help in the realization of highly sensitive space and air-borne heterodyne receivers.
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Submitted 29 August, 2021; v1 submitted 17 June, 2021;
originally announced July 2021.
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Authors:
Jesús Herranz,
Pierre Corfdir,
Esperanza Luna,
Uwe Jahn,
Ryan B. Lewis,
Lutz Schrottke,
Jonas Lähnemann,
Abbes Tahraoui,
Achim Trampert,
Oliver Brandt,
Lutz Geelhaar
Abstract:
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonic…
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Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 $μ$m in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on scanning transmission electron microscopy. The spontaneous emission of these nanowire structures is investigated by cathodoluminescence and photoluminescence spectroscopy. Thermal redistribution of charge carriers to larger quantum dots explains the long wavelength emission achieved at room temperature. Finally, in order to demonstrate the feasibility of the presented nanowire heterostructures as electrically driven light emitters monolithically integrated on Si, a light emitting diode is fabricated exhibiting room-temperature electroluminescence at 1.26 $μ$m.
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Submitted 18 December, 2019; v1 submitted 27 August, 2019;
originally announced August 2019.
