In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices
Authors:
Di Zhang,
Rohan Dhall,
Matthew M. Schneider,
Chengyu Song,
Hongyi Dou,
Sundar Kunwar,
Natanii R. Yazzie,
Jim Ciston,
Nicholas G. Cucciniello,
Pinku Roy,
Michael T. Pettes,
John Watt,
Winson Kuo,
Haiyan Wang,
Rodney J. McCabe,
Aiping Chen
Abstract:
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the working mechanism of such interface-type RS devices are much less studied compared to that of the filament-type devices, which hinders the design and application of t…
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Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the working mechanism of such interface-type RS devices are much less studied compared to that of the filament-type devices, which hinders the design and application of the novel interface-type devices. In this work, we fabricate a metal/TiOx/TiN/Si (001) thin film memristor by using a one-step pulsed laser deposition. In situ transmission electron microscopy (TEM) imaging and current-voltage (I-V) characteristic demonstrate that the device is switched between high resistive state (HRS) and low resistive state (LRS) in a bipolar fashion with sweeping the applied positive and negative voltages. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charged defects (such as oxygen vacancies) can migrate along the intrinsic grain boundaries of TiOx insulating phase under electric field without forming obvious conductive filaments, resulting in the modulation of Schottky barriers at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a novel perspective on RS processes and opens up new technological opportunities for fabricating ultra-low-energy nitride-based memristive devices.
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Submitted 30 October, 2024;
originally announced October 2024.
A New Methodology for Radiation Effects Studies in Solids using the Plasma Focused Ion Beam
Authors:
M. A. Tunes,
M. M. Schneider,
C. A. Taylor,
T. A. Saleh
Abstract:
A new methodology for fundamental studies of radiation effects in solids is herein introduced by using a plasma Focused Ion Beam (PFIB). The classical example of ion-induced amorphization of single-crystalline pure Si is used as a proof-of-concept experiment that delineates the advantages and limitations of this new technique. We demonstrate both the feasibility and invention of a new ion irradiat…
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A new methodology for fundamental studies of radiation effects in solids is herein introduced by using a plasma Focused Ion Beam (PFIB). The classical example of ion-induced amorphization of single-crystalline pure Si is used as a proof-of-concept experiment that delineates the advantages and limitations of this new technique. We demonstrate both the feasibility and invention of a new ion irradiation mode consisting of irradiating a single-specimen in multiple areas, at multiple doses, in specific sites. This present methodology suggests a very precise control of the ion beam over the specimen, with an error in the flux on the order of only 1%. In addition, the proposed methodology allows the irradiation of specimens with higher dose rates when compared with conventional ion accelerators and implanters. This methodology is expected to open new research frontiers beyond the scope of materials at extremes such as in nanopatterning and nanodevices fabrication.
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Submitted 28 June, 2022;
originally announced June 2022.
py4DSTEM: a software package for multimodal analysis of four-dimensional scanning transmission electron microscopy datasets
Authors:
Benjamin H Savitzky,
Lauren A Hughes,
Steven E Zeltmann,
Hamish G Brown,
Shiteng Zhao,
Philipp M Pelz,
Edward S Barnard,
Jennifer Donohue,
Luis Rangel DaCosta,
Thomas C. Pekin,
Ellis Kennedy,
Matthew T Janish,
Matthew M Schneider,
Patrick Herring,
Chirranjeevi Gopal,
Abraham Anapolsky,
Peter Ercius,
Mary Scott,
Jim Ciston,
Andrew M Minor,
Colin Ophus
Abstract:
Scanning transmission electron microscopy (STEM) allows for imaging, diffraction, and spectroscopy of materials on length scales ranging from microns to atoms. By using a high-speed, direct electron detector, it is now possible to record a full 2D image of the diffracted electron beam at each probe position, typically a 2D grid of probe positions. These 4D-STEM datasets are rich in information, in…
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Scanning transmission electron microscopy (STEM) allows for imaging, diffraction, and spectroscopy of materials on length scales ranging from microns to atoms. By using a high-speed, direct electron detector, it is now possible to record a full 2D image of the diffracted electron beam at each probe position, typically a 2D grid of probe positions. These 4D-STEM datasets are rich in information, including signatures of the local structure, orientation, deformation, electromagnetic fields and other sample-dependent properties. However, extracting this information requires complex analysis pipelines, from data wrangling to calibration to analysis to visualization, all while maintaining robustness against imaging distortions and artifacts. In this paper, we present py4DSTEM, an analysis toolkit for measuring material properties from 4D-STEM datasets, written in the Python language and released with an open source license. We describe the algorithmic steps for dataset calibration and various 4D-STEM property measurements in detail, and present results from several experimental datasets. We have also implemented a simple and universal file format appropriate for electron microscopy data in py4DSTEM, which uses the open source HDF5 standard. We hope this tool will benefit the research community, helps to move the developing standards for data and computational methods in electron microscopy, and invite the community to contribute to this ongoing, fully open-source project.
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Submitted 20 March, 2020;
originally announced March 2020.
