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Time Resolution Characterization of 4H-SiC LGADs with a ${}^{90}$Sr Source
Authors:
Tao Yang,
Yashas Satapathy,
Ben J. Sekely,
Abraham Tishelman-Charny,
Greg Allion,
Gil Atar,
Philip Barletta,
Carl Haber,
Steve Holland,
John F. Muth,
Spyridon Pavlidis,
Stefania Stucci
Abstract:
This work presents timing measurements of 4H-SiC Low Gain Avalanche Detectors (4H-SiC LGADs) using beta particles from a ${}^{90}$Sr source. The 4H-SiC LGADs exhibit fast signal responses, and a time resolution of 61~ps was achieved, comparable to that of standard Si LGADs. The present limitation in the time resolution of 4H-SiC LGADs appears to stem from limited charge generation. Nevertheless, t…
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This work presents timing measurements of 4H-SiC Low Gain Avalanche Detectors (4H-SiC LGADs) using beta particles from a ${}^{90}$Sr source. The 4H-SiC LGADs exhibit fast signal responses, and a time resolution of 61~ps was achieved, comparable to that of standard Si LGADs. The present limitation in the time resolution of 4H-SiC LGADs appears to stem from limited charge generation. Nevertheless, their higher voltage tolerance and faster carrier drift suggest that, with increased charge collection, their timing performance could approach or even surpass that of Si LGADs. These results demonstrate the strong potential of 4H-SiC LGADs as a robust platform for precision timing in future 4D tracking detectors, while also highlighting that signal charge is the dominant factor currently limiting their performance, indicating that further optimization of gain and drift structures will be essential for future development.
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Submitted 4 September, 2025;
originally announced September 2025.
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Impact of Proton Irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)
Authors:
Yashas Satapathy,
Ben J. Sekely,
Abraham Tishelman-Charny,
Tao Yang,
Greg Allion,
Gil Atar,
Philip Barletta,
Carl Haber,
Steve E. Holland,
John F. Muth,
Spyridon Pavlidis,
Stefania Stucci
Abstract:
Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33$\times$10$^{14}$ p/cm$^2$. The electrostatic performance of both irradiated and…
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Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33$\times$10$^{14}$ p/cm$^2$. The electrostatic performance of both irradiated and non-irradiated devices was evaluated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. Moreover, charge collection measurements using $α$ particles were also conducted. SiC LGADs displayed a loss in rectification and gain with increasing proton fluence. Additionally, the reduction in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation induced defects also hinders carrier acceleration reducing impact ionization, leading to further gain reduction. However, despite the reduction in device performance, the demonstration of a measurable signal and gain after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.
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Submitted 30 July, 2025;
originally announced July 2025.
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Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)
Authors:
Tao Yang,
Ben Sekely,
Yashas Satapathy,
Greg Allion,
Philip Barletta,
Carl Haber,
Steve Holland,
John F. Muth,
Spyridon Pavlidis,
Stefania Stucci
Abstract:
4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with…
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4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with $α$ particles from a $^{210}_{84}\rm{Po}$ source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.
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Submitted 11 September, 2024; v1 submitted 22 August, 2024;
originally announced August 2024.
