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Optical excitation of bulk plasmons in n-doped InAsSb thin films : investigating the second viscosity in electron gas
Authors:
Antoine Moreau,
Émilie Sakat,
Jean-Paul Hugonin,
Téo Mottin,
Aidan Costard,
Denis Langevin,
Patricia Loren,
Laurent Cerutti,
Fernando Gonzalez Posada Flores,
Thierry Taliercio
Abstract:
We demonstrate that including the second viscosity of an electron gas in the hydrodynamic model allows for highly accurate modeling of the optical response of heavily doped semiconductors. In our setup, which improves resonance visibility compared to previous approaches, plasmon resonances become more distinct, allowing for detailed analysis of the underlying physics. With advanced fitting techniq…
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We demonstrate that including the second viscosity of an electron gas in the hydrodynamic model allows for highly accurate modeling of the optical response of heavily doped semiconductors. In our setup, which improves resonance visibility compared to previous approaches, plasmon resonances become more distinct, allowing for detailed analysis of the underlying physics. With advanced fitting techniques based on a physics-informed cost function and a tailored optimization algorithm, we obtain close agreement between simulations and experimental data across different sample thicknesses. This enhanced resonance visibility, combined with our integrated approach, shows that key parameters such as doping level and effective electron mass can be retrieved from a single optical measurement. The spatial dispersion taken into account in the hydrodynamic framework is essential for accurately describing the optical response of plasmonic materials in this frequency range and is likely to become a standard modeling approach.
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Submitted 2 December, 2024;
originally announced December 2024.
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Generalized electromagnetic theorems for non-local plasmonics
Authors:
Emilie Sakat,
Antoine Moreau,
Jean-Paul Hugonin
Abstract:
The ultraconfined light of plasmonic modes put their effective wavelength close to the mean free path of electrons inside the metal electron gas. The Drude model, which can not take the repulsive interactions of electrons into account, then clearly begins to show its limits. In an intermediate length scale where a full quantum treatment is computationally prohibitive, the semiclassical hydrodynami…
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The ultraconfined light of plasmonic modes put their effective wavelength close to the mean free path of electrons inside the metal electron gas. The Drude model, which can not take the repulsive interactions of electrons into account, then clearly begins to show its limits. In an intermediate length scale where a full quantum treatment is computationally prohibitive, the semiclassical hydrodynamic model, instrinsically non-local, has proven successful. Here we generalize the expression for the absorption volume density and the reciprocity theorem in the framework of this hydrodynamic model. We validate numerically these generalized theorems and show that using classical expressions instead leads to large discrepancies.
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Submitted 3 June, 2021; v1 submitted 3 February, 2021;
originally announced February 2021.
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Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Authors:
Anas Elbaz,
Riazul Arefin,
Emilie Sakat,
Binbin Wang,
Etienne Herth,
Gilles Patriarche,
Antonino Foti,
Razvigor Ossikovski,
Sebastien Sauvage,
Xavier Checoury,
Konstantinos Pantzas,
Isabelle Sagnes,
Jérémie Chrétien,
Lara Casiez,
Mathieu Bertrand,
Vincent Calvo,
Nicolas Pauc,
Alexei Chelnokov,
Philippe Boucaud,
Frederic Boeuf,
Vincent Reboud,
Jean-Michel Hartmann,
Moustafa El Kurdi
Abstract:
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless su…
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GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
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Submitted 21 December, 2020;
originally announced December 2020.
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Upper bound for light absorption assisted by a nanoantenna
Authors:
Emilie Sakat,
Léo Wojszvzyk,
Jean-Jacques Greffet,
Jean-Paul Hugonin,
Christophe Sauvan
Abstract:
We study light absorption by a dipolar absorber in a given environment, which can be a nanoantenna or any complex inhomogeneous medium. From first-principle calculations, we derive an upper bound for the absorption, which decouples the impact of the environment from the one of the absorber. Since it is an intrinsic characteristic of the environment regardless of the absorber, it provides a good fi…
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We study light absorption by a dipolar absorber in a given environment, which can be a nanoantenna or any complex inhomogeneous medium. From first-principle calculations, we derive an upper bound for the absorption, which decouples the impact of the environment from the one of the absorber. Since it is an intrinsic characteristic of the environment regardless of the absorber, it provides a good figure of merit to compare the ability of different systems to enhance absorption. We show that, in the scalar approximation, the relevant parameter is not the field enhancement but the ratio between the field enhancement and the local density of states. Consequently, a plasmonic structure supporting hot spots is not necessarily the best choice to enhance absorption. We also show that our theoretical results can be applied beyond the scalar approximation and the plane-wave illumination.
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Submitted 10 April, 2020; v1 submitted 24 September, 2019;
originally announced September 2019.
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Optical Activation of Germanium Plasmonic Antennas in the Mid Infrared
Authors:
Marco P. Fischer,
Christian Schmidt,
Emilie Sakat,
Johannes Stock,
Antonio Samarelli,
Jacopo Frigerio,
Michele Ortolani,
Douglas J. Paul,
Giovanni Isella,
Alfred Leitenstorfer,
Paolo Biagioni,
Daniele Brida
Abstract:
Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recomb…
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Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination red-shifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.
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Submitted 10 June, 2016; v1 submitted 21 March, 2016;
originally announced March 2016.
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Generalized Kirchhoff law
Authors:
Jean-Jacques Greffet,
Patrick Bouchon,
Giovanni Brucoli,
Emilie Sakat,
François Marquier
Abstract:
Thermal emission can be conveniently described using Kirchhoff law which states that the emissivity is equal to the absorptivity for isothermal bodies. For a finite size system, absorptivity is replaced by an absorption cross section. Here, we study the link between thermal emission and absorption by a finite size object which is not isothermal. We define a local absorption rate for a given incide…
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Thermal emission can be conveniently described using Kirchhoff law which states that the emissivity is equal to the absorptivity for isothermal bodies. For a finite size system, absorptivity is replaced by an absorption cross section. Here, we study the link between thermal emission and absorption by a finite size object which is not isothermal. We define a local absorption rate for a given incident plane wave and we prove that it is equal to the local emissivity rate. Hence, Kirchhoff law can be extended to anisothermal media. A practical consequence is the possibility of analysing thermal radiation by a variety of non-equilibrium systems such as microwave radiation in geophysical remote sensing or X-UV radiation by plasmas. This result provides a theoretical framework to analyse thermal emission by hot electrons in quantum wells, tunnel junctions or graphene. It paves the way to the design of a new generation of incandescent emitters made of subwavelength hot emitters coupled to cold antennas. The antennas control the emission spectrum, direction and polarization of the emitted radiation.
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Submitted 3 January, 2016;
originally announced January 2016.
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Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers
Authors:
Leonetta Baldassarre,
Eugenio Calandrini,
Antonio Samarelli,
Kevin Gallacher,
Douglas J. Paul,
Jacopo Frigerio,
Giovanni Isella,
Emilie Sakat,
Marco Finazzi,
Paolo Biagioni,
Michele Ortolani
Abstract:
The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the differ…
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The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film.
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Submitted 20 February, 2015;
originally announced February 2015.
