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Experimental evidence on photo-assisted O$^-$ ion production from Al$_2$O$_3$ cathode in cesium sputter negative ion source
Authors:
O. Tarvainen,
R. Kronholm,
M. Laitinen,
M. Reponen,
J. Julin,
V. Toivanen,
M. Napari,
M. Marttinen,
D. Faircloth,
H. Koivisto,
T. Sajavaara
Abstract:
The production of negative ions in cesium sputter ion sources is generally considered to be a pure surface process. It has been recently proposed that ion pair production could explain the higher-than-expected beam currents extracted from these ion sources, therefore opening the door for laser-assisted enhancement of the negative ion yield. We have tested this hypothesis by measuring the effect of…
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The production of negative ions in cesium sputter ion sources is generally considered to be a pure surface process. It has been recently proposed that ion pair production could explain the higher-than-expected beam currents extracted from these ion sources, therefore opening the door for laser-assisted enhancement of the negative ion yield. We have tested this hypothesis by measuring the effect of various pulsed diode lasers on the O$^-$ beam current produced from Al$_2$O$_3$ cathode of a cesium sputter ion source. It is expected that the ion pair production of O$^-$ requires populating the 5d electronic states of neutral cesium, thus implying that the process should be provoked only with specific wavelengths. Our experimental results provide evidence for the existence of a wavelength-dependent photo-assisted effect but cast doubt on its alleged resonant nature as the prompt enhancement of beam current can be observed with laser wavelengths exceeding a threshold photon energy. The beam current transients observed during the laser pulses suggest that the magnitude and longevity of the beam current enhancement depends on the cesium balance on the cathode surface. We conclude that the photo-assisted negative ion production could be of practical importance as it can more than double the extracted beam current under certain operational settings of the ion source.
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Submitted 1 July, 2020;
originally announced July 2020.
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Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering
Authors:
A. Barthel,
J. W. Roberts,
M. Napari,
T. N. Huq,
A. Kovács,
R. A. Oliver,
P. R. Chalker,
T. Sajavaara,
F. C-P. Massabuau
Abstract:
The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composit…
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The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composition for this alloy. The deposition of crystalline $α$-(Ti$_x$Ga$_{1-x}$)$_2$O$_3$ films with up to x~5.3%, was demonstrated. At greater Ti concentration, the films became amorphous. Modification of the band gap over a range of ~ 270 meV was achieved across the crystalline films and a maximum change in band gap from pure $α$-Ga$_2$O$_3$ of ~1.1 eV was observed for the films of greatest Ti fraction (61% Ti relative to Ga). The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a significant modification in band gap shows promise for band gap engineering and the enhancement in versatility of application of $α$-Ga$_2$O$_3$ in optoelectronic devices.
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Submitted 2 June, 2020;
originally announced June 2020.
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Characterization of $^{233}$U alpha recoil sources for $^{229(m)}$Th beam production
Authors:
I. Pohjalainen,
I. D. Moore,
T. Sajavaara
Abstract:
Radioactive $^{233}$U alpha recoil sources are being considered for the production of a thorium ion source to study the low-energy isomer in $^{229}$Th with high-resolution collinear laser spectroscopy at the IGISOL facility of the University of Jyväskylä. In this work two different $^{233}$U sources have been characterized via alpha and gamma spectroscopy of the decay radiation obtained directly…
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Radioactive $^{233}$U alpha recoil sources are being considered for the production of a thorium ion source to study the low-energy isomer in $^{229}$Th with high-resolution collinear laser spectroscopy at the IGISOL facility of the University of Jyväskylä. In this work two different $^{233}$U sources have been characterized via alpha and gamma spectroscopy of the decay radiation obtained directly from the sources and from alpha-recoils embedded in implantation foils. These measurements revealed rather low $^{229}$Th recoil efficiencies of only a few percent. Although the low efficiency of one of the two sources can be attributed to its inherent thickness, the low recoil efficiency of the second, thinner source, was unexpected. Rutherford backscattering spectrometry (RBS) was performed to investigate the elemental composition as a function of depth revealing a contamination layer on top of the thin source. The combination of spectroscopic methods proves to be a useful approach in the assessment of alpha recoil source performance in general.
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Submitted 25 March, 2019;
originally announced March 2019.
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Transition-Edge Sensors for Particle Induced X-ray Emission Measurements
Authors:
M. R. J. Palosaari,
K. M. Kinnunen,
J. Julin,
M. Laitinen,
M. Napari,
T. Sajavaara,
W. B. Doriese,
J. Fowler,
C. Reintsema,
D. Swetz,
D. Schmidt,
J. Ullom,
I. J. Maasilta
Abstract:
In this paper we present a new measurement setup, where a transitionedge sensor detector array is used to detect X-rays in particle induced X-ray emission measurements with a 2 MeV proton beam. Transition-edge sensors offer orders of magnitude improvement in energy resolution compared to conventional silicon or germanium detectors, making it possible to recognize spectral lines in materials analys…
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In this paper we present a new measurement setup, where a transitionedge sensor detector array is used to detect X-rays in particle induced X-ray emission measurements with a 2 MeV proton beam. Transition-edge sensors offer orders of magnitude improvement in energy resolution compared to conventional silicon or germanium detectors, making it possible to recognize spectral lines in materials analysis that have previously been impossible to resolve, and to get chemical information from the elements. Our sensors are cooled to the operation temperature (65 mK) with a cryogen-free adiabatic demagnetization refrigerator, which houses a specially designed X-ray snout that has a vacuum tight window to couple in the radiation. For the best pixel, the measured instrumental energy resolution was 3.06 eV full width at half maximum at 5.9 keV.We discuss the current status of the project, benefits of transition-edge sensors when used in particle induced X-ray emission spectroscopy, and the results from the first measurements.
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Submitted 7 October, 2013;
originally announced October 2013.
