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Optoelectronic Readout of single Er Adatom's Electronic States Adsorbed on the Si(100) Surface at Low Temperature (9K)
Authors:
Eric Duverger,
Damien Riedel
Abstract:
Integrating nanoscale opto-electronic functions is vital for applications such as optical emitters, detectors, and quantum information. Lanthanide atoms show great potential in this endeavor due to their intrinsic transitions. Here, we investigate Er adatoms on Si(100)-2x1 at 9K using a scanning tunneling microscope (STM) coupled to a tunable laser. Er adatoms display two main adsorption configura…
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Integrating nanoscale opto-electronic functions is vital for applications such as optical emitters, detectors, and quantum information. Lanthanide atoms show great potential in this endeavor due to their intrinsic transitions. Here, we investigate Er adatoms on Si(100)-2x1 at 9K using a scanning tunneling microscope (STM) coupled to a tunable laser. Er adatoms display two main adsorption configurations that are optically excited between 800 nm and 1200 nm while the STM reads the resulting photocurrents. Our spectroscopic method reveals that various photocurrent signals stem from the bare silicon surface or Er adatoms. Additional photocurrent peaks appear as the signature of the Er adatoms relaxation, triggering efficient dissociation of nearby trapped excitons. Calculations using the density functional theory with spin-orbit coupling correction highlight the origin of the observed photocurrent peaks as specific 4f->4f or 4f->5d transitions. This spectroscopic technique can pave the way to an optoelectronic analysis of atomic and molecular assemblies by offering unique insight into their intrinsic quantum properties.
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Submitted 29 December, 2023;
originally announced January 2024.
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Efficient Photonic Integration of Diamond Color Centers and Thin-Film Lithium Niobate
Authors:
Daniel Riedel,
Hope Lee,
Jason F. Herrmann,
Jakob Grzesik,
Vahid Ansari,
Jean-Michel Borit,
Hubert S. Stokowski,
Shahriar Aghaeimeibodi,
Haiyu Lu,
Patrick J. McQuade,
Nick A. Melosh,
Zhi-Xun Shen,
Amir H. Safavi-Naeini,
Jelena Vučković
Abstract:
On-chip photonic quantum circuits with integrated quantum memories have the potential to radically progress hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories, as they combine long storage times with excellent optical emission properties and an optically-addressable spin state. However, as a…
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On-chip photonic quantum circuits with integrated quantum memories have the potential to radically progress hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories, as they combine long storage times with excellent optical emission properties and an optically-addressable spin state. However, as a material, diamond lacks many functionalities needed to realize scalable quantum systems. Thin-film lithium niobate (TFLN), in contrast, offers a number of useful photonic nonlinearities, including the electro-optic effect, piezoelectricity, and capabilities for periodically-poled quasi-phase matching. Here, we present highly efficient heterogeneous integration of diamond nanobeams containing negatively charged silicon-vacancy (SiV) centers with TFLN waveguides. We observe greater than 90\% transmission efficiency between the diamond nanobeam and TFLN waveguide on average across multiple measurements. By comparing saturation signal levels between confocal and integrated collection, we determine a $10$-fold increase in photon counts channeled into TFLN waveguides versus that into out-of-plane collection channels. Our results constitute a key step for creating scalable integrated quantum photonic circuits that leverage the advantages of both diamond and TFLN materials.
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Submitted 27 June, 2023;
originally announced June 2023.
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Cryogenic packaging of nanophotonic devices with a low coupling loss < 1 dB
Authors:
Beibei Zeng,
Chawina De-Eknamkul,
Daniel Assumpcao,
Dylan Renaud,
Zhuoxian Wang,
Daniel Riedel,
Jeonghoon Ha,
Carsten Robens,
David Levonian,
Mikhail Lukin,
Ralf Riedinger,
Mihir Bhaskar,
Denis Sukachev,
Marko Loncar,
Bart Machielse
Abstract:
Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically-compatible coupling with s…
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Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically-compatible coupling with sub-dB losses from optical fibers to nanophotonic circuits. Here we report a technique for reproducibly generating a permanently packaged interface between a tapered optical fiber and nanophotonic devices with a record-low coupling loss < 1 dB per facet at near-infrared wavelengths (~730 nm) that remains stable from 300 K to 30 mK. We further demonstrate the compatibility of this technique with etched lithium niobate on insulator waveguides. The technique lifts performance limitations imposed by scattering as light transfers between photonic devices and optical fibers, paving the way for scalable integration of photonic technologies at both room and cryogenic temperatures.
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Submitted 10 August, 2023; v1 submitted 16 June, 2023;
originally announced June 2023.
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A hybrid quantum photonic interface for $^{171}$Yb solid-state qubits
Authors:
Chun-Ju Wu,
Daniel Riedel,
Andrei Ruskuc,
Ding Zhong,
Hyounghan Kwon,
Andrei Faraon
Abstract:
$^{171}$Yb$^{3+}$ in YVO$_4$ is a promising candidate for building quantum networks with good optical addressability, excellent spin properties and a secondary nuclear-spin quantum register. However, the associated long optical lifetime necessitates coupling to optical resonators for faster emission of single photons and to facilitate control of single $^{171}$Yb ions. Previously, single $^{171}…
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$^{171}$Yb$^{3+}$ in YVO$_4$ is a promising candidate for building quantum networks with good optical addressability, excellent spin properties and a secondary nuclear-spin quantum register. However, the associated long optical lifetime necessitates coupling to optical resonators for faster emission of single photons and to facilitate control of single $^{171}$Yb ions. Previously, single $^{171}$Yb ions were addressed by coupling them to monolithic photonic crystal cavities fabricated via lengthy focused ion beam milling. Here, we design and fabricate a hybrid platform based on ions coupled to the evanescently decaying field of a GaAs photonic crystal cavity. We experimentally detect and demonstrate coherent optical control of single $^{171}$Yb ions. For the most strongly coupled ions, we find a 64 fold reduction in lifetime. The results show a promising route towards a quantum network with $^{171}$Yb:YVO$_4$ using a highly scalable platform.
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Submitted 4 December, 2022;
originally announced December 2022.
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Widely-tunable, doubly-resonant Raman scattering on diamond in an open microcavity
Authors:
Sigurd Flågan,
Patrick Maletinsky,
Richard J. Warburton,
Daniel Riedel
Abstract:
Raman lasers based on bulk diamond are a valuable resource for generating coherent light in wavelength regimes where no common laser diodes are available. Nevertheless, the widespread use of such lasers is limited by their high threshold power requirements on the order of several Watts. Using on-chip microresonators, a significant reduction of the lasing threshold by more than two orders of magnit…
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Raman lasers based on bulk diamond are a valuable resource for generating coherent light in wavelength regimes where no common laser diodes are available. Nevertheless, the widespread use of such lasers is limited by their high threshold power requirements on the order of several Watts. Using on-chip microresonators, a significant reduction of the lasing threshold by more than two orders of magnitude has been shown. However, these resonators lack a continuous tuning mechanism and, mainly due to fabrication limitations, their implementation in the visible remains elusive. Here, we propose a platform for a diamond Raman laser in the visible. The device is based on a miniaturized, open-access Fabry-Perot cavity. Our microcavity provides widely-tunable doubly-resonant enhancement of Raman scattering from high quality single-crystalline diamond. We demonstrate a $>$THz continuous tuning range of doubly-resonant Raman scattering, a range limited only by the reflective stopband of the mirrors. Based on the experimentally determined quality factors exceeding $300\,000$, our theoretical analysis suggests that, with realistic improvements, a sub-mW threshold is readily within reach. Our findings pave the way to the creation of a universal low-power frequency shifter, a potentially valuable addition to the nonlinear optics toolbox.
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Submitted 12 October, 2021;
originally announced October 2021.
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Electrical tuning of tin-vacancy centers in diamond
Authors:
Shahriar Aghaeimeibodi,
Daniel Riedel,
Alison E. Rugar,
Constantin Dory,
Jelena Vuckovic
Abstract:
Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (SnV$^{\,\textrm{-}}$) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1$\,$K. However, color centers typically suffer fr…
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Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (SnV$^{\,\textrm{-}}$) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1$\,$K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study electrical tuning of SnV$^{\,\textrm{-}}$ centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7$\,$GHz. We observe both quadratic and linear dependence on the applied electric field. We also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.
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Submitted 2 March, 2021;
originally announced March 2021.
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A Quantum Photonic Interface for Tin-Vacancy Centers in Diamond
Authors:
Alison E. Rugar,
Shahriar Aghaeimeibodi,
Daniel Riedel,
Constantin Dory,
Haiyu Lu,
Patrick J. McQuade,
Zhi-Xun Shen,
Nicholas A. Melosh,
Jelena Vučković
Abstract:
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV$^{\,\textrm{-}}$) centers in diamond are of particular intere…
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The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV$^{\,\textrm{-}}$) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV$^{\,\textrm{-}}$ centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV$^{\,\textrm{-}}$ centers in diamond. We integrate SnV$^{\,\textrm{-}}$ centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons ($90\%$) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV$^{\,\textrm{-}}$ centers in diamond.
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Submitted 23 February, 2021;
originally announced February 2021.
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Suppression of surface-related loss in a gated semiconductor microcavity
Authors:
Daniel Najer,
Natasha Tomm,
Alisa Javadi,
Alexander R. Korsch,
Benjamin Petrak,
Daniel Riedel,
Vincent Dolique,
Sascha R. Valentin,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer…
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We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer of quantum dots in the intrinsic region. Free-carrier absorption in the highly doped n- and p-layers is minimized by positioning them close to a node of the vacuum electromagnetic-field. The surface, however, resides at an anti-node of the vacuum field and results in significant loss. These losses are much reduced by surface passivation. The strong dependence on wavelength implies that the main effect of the surface passivation is to eliminate the surface electric field, thereby quenching below-bandgap absorption via a Franz-Keldysh-like effect. An additional benefit is that the surface passivation reduces scattering at the GaAs surface. These results are important in other nano-photonic devices which rely on a GaAs-vacuum interface to confine the electromagnetic field.
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Submitted 17 February, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Cavity-enhanced Raman scattering for in situ alignment and characterization of solid-state microcavities
Authors:
Daniel Riedel,
Sigurd Flågan,
Patrick Maletinsky,
Richard J. Warburton
Abstract:
We report cavity-enhanced Raman scattering from a single-crystal diamond membrane embedded in a highly miniaturized fully-tunable Fabry-Pérot cavity. The Raman intensity is enhanced 58.8-fold compared to the corresponding confocal measurement. The strong signal amplification results from the Purcell effect. We show that the cavity-enhanced Raman scattering can be harnessed as a narrowband, high-in…
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We report cavity-enhanced Raman scattering from a single-crystal diamond membrane embedded in a highly miniaturized fully-tunable Fabry-Pérot cavity. The Raman intensity is enhanced 58.8-fold compared to the corresponding confocal measurement. The strong signal amplification results from the Purcell effect. We show that the cavity-enhanced Raman scattering can be harnessed as a narrowband, high-intensity, internal light-source. The Raman process can be triggered in a simple way by using an optical excitation frequency outside the cavity stopband and is independent of the lateral positioning of the cavity mode with respect to the diamond membrane. The strong Raman signal emerging from the cavity output facilitates in situ mode-matching of the cavity mode to single-mode collection optics; it also represents a simple way of measuring the dispersion and spatial intensity-profile of the cavity modes. The optimization of the cavity performance via the strong Raman process is extremely helpful in achieving efficient cavity-outcoupling of the relatively weak emission of single color-centers such as nitrogen-vacancy centers in diamond or rare-earth ions in crystalline hosts with low emitter density.
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Submitted 26 September, 2019;
originally announced September 2019.
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Probing Charge Transfer Dynamics in a Single Iron Tetraphenylporphyrin Dyad Adsorbed on an Insulating Surface
Authors:
Pablo Ramos,
Marc Mankarious,
Michele Pavanello,
Damien Riedel
Abstract:
Although the dynamics of charge transfer (CT) processes can be probed with ultimate lifetime resolution, the helplessness to control CT at the nanoscale constitutes one of the most important road-blocks to revealing some of its deep fundamental aspects. In this work, we present an investigation of CT dynamics in a single iron tetraphenylporphyrin (Fe-TPP) donor/acceptor dyad adsorbed on a CaF2/Si(…
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Although the dynamics of charge transfer (CT) processes can be probed with ultimate lifetime resolution, the helplessness to control CT at the nanoscale constitutes one of the most important road-blocks to revealing some of its deep fundamental aspects. In this work, we present an investigation of CT dynamics in a single iron tetraphenylporphyrin (Fe-TPP) donor/acceptor dyad adsorbed on a CaF2/Si(100) insulating surface. The tip of a scanning tunneling microscope (STM) is used to create local ionic states in one fragment of the dyad. The CT process is monitored by imaging subsequent changes in the neighbor acceptor molecule and its efficiency is mapped revealing the influence of the initial excited state in the donor molecule. In validation of the experiments, simulations based on density functional theory show that holes have a higher donor-acceptor CT rate compared to electrons and highlight a noticeable initial state dependence on the CT process. We leverage the unprecedented spatial resolution achieved in our experiments to show that the CT process in the dyad is governed via molecule-molecule coherent tunneling with negligible surface-mediated character.
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Submitted 5 July, 2018;
originally announced July 2018.
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Advanced Fabrication of Single-crystal Diamond Membranes for Quantum Technologies
Authors:
Michel Challier,
Selda Sonusen,
Arne Barfuss,
Dominik Rohner,
Daniel Riedel,
Johannes Koelbl,
Marc Ganzhorn,
Patrick Appel,
Patrick Maletinsky,
Elke Neu
Abstract:
Many promising applications of single crystal diamond and its color centers as sensor platform and in photonics require free-standing membranes with a thickness ranging from several micrometers to the few 100 nm range. In this work, we present an approach to conveniently fabricate such thin membranes with up to about one millimeter in size. We use commercially available diamond plates (thickness 5…
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Many promising applications of single crystal diamond and its color centers as sensor platform and in photonics require free-standing membranes with a thickness ranging from several micrometers to the few 100 nm range. In this work, we present an approach to conveniently fabricate such thin membranes with up to about one millimeter in size. We use commercially available diamond plates (thickness 50 $μ$m) in an inductively coupled reactive ion etching process which is based on argon, oxygen and SF$_6$. We thus avoid using toxic, corrosive feed gases and add an alternative to previously presented recipes involving chlorine-based etching steps. Our membranes are smooth (RMS roughness <1 nm) and show moderate thickness variation (central part: <1 $μ$m over $\approx \,$200x200 $μ$m$^2$). Due to an improved etch mask geometry, our membranes stay reliably attached to the diamond plate in our chlorine-based as well as SF$_6$-based processes. Our results thus open the route towards higher reliability in diamond device fabrication and up-scaling.
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Submitted 22 March, 2018; v1 submitted 25 February, 2018;
originally announced February 2018.
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Deterministic enhancement of coherent photon generation from a nitrogen-vacancy center in ultrapure diamond
Authors:
Daniel Riedel,
Immo Söllner,
Brendan J. Shields,
Sebastian Starosielec,
Patrick Appel,
Elke Neu,
Patrick Maletinsky,
Richard J. Warburton
Abstract:
The nitrogen-vacancy (NV) center in diamond has an optically addressable, highly coherent spin. However, an NV center even in high quality single-crystalline material is a very poor source of single photons: extraction out of the high-index diamond is inefficient, the emission of coherent photons represents just a few per cent of the total emission, and the decay time is large. In principle, all t…
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The nitrogen-vacancy (NV) center in diamond has an optically addressable, highly coherent spin. However, an NV center even in high quality single-crystalline material is a very poor source of single photons: extraction out of the high-index diamond is inefficient, the emission of coherent photons represents just a few per cent of the total emission, and the decay time is large. In principle, all three problems can be addressed with a resonant microcavity. In practice, it has proved difficult to implement this concept: photonic engineering hinges on nano-fabrication yet it is notoriously difficult to process diamond without degrading the NV centers. We present here a microcavity scheme which uses minimally processed diamond, thereby preserving the high quality of the starting material, and a tunable microcavity platform. We demonstrate a clear change in the lifetime for multiple individual NV centers on tuning both the cavity frequency and anti-node position, a Purcell effect. The overall Purcell factor $F_{\rm P}=2.0$ translates to a Purcell factor for the zero phonon line (ZPL) of $F_{\rm P}^{\rm ZPL}\sim30$ and an increase in the ZPL emission probability from $\sim 3 \%$ to $\sim 46 \%$. By making a step-change in the NV's optical properties in a deterministic way, these results pave the way for much enhanced spin-photon and spin-spin entanglement rates.
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Submitted 2 March, 2017;
originally announced March 2017.
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Fabrication of mirror templates in silica with micron-sized radii of curvature
Authors:
Daniel Najer,
Martina Renggli,
Daniel Riedel,
Sebastian Starosielec,
Richard J. Warburton
Abstract:
We present the fabrication of exceptionally small-radius concave microoptics on fused silica substrates using CO2 laser ablation and subsequent reactive ion etching. The protocol yields on-axis near-Gaussian depressions with radius of curvature $\lesssim5$ microns at shallow depth and low surface roughness of 2 angstroms. This geometry is appealing for cavity quantum electrodynamics where small mo…
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We present the fabrication of exceptionally small-radius concave microoptics on fused silica substrates using CO2 laser ablation and subsequent reactive ion etching. The protocol yields on-axis near-Gaussian depressions with radius of curvature $\lesssim5$ microns at shallow depth and low surface roughness of 2 angstroms. This geometry is appealing for cavity quantum electrodynamics where small mode volumes and low scattering losses are desired. We study the optical performance of the structure within a tunable Fabry-Perot type microcavity, demonstrate near-coating-limited loss rates (F = 25,000) and small focal lengths consistent with their geometrical dimensions.
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Submitted 10 December, 2016; v1 submitted 16 August, 2016;
originally announced August 2016.
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A low-loss, broadband antenna for efficient photon collection from a coherent spin in diamond
Authors:
D. Riedel,
D. Rohner,
M. Ganzhorn,
T. Kaldewey,
P. Appel,
E. Neu,
R. J. Warburton,
P. Maletinsky
Abstract:
We report the creation of a low-loss, broadband optical antenna giving highly directed output from a coherent single spin in the solid-state. The device, the first solid-state realization of a dielectric antenna, is engineered for individual nitrogen vacancy (NV) electronic spins in diamond. We demonstrate a directionality close to 10. The photonic structure preserves the high spin coherence of si…
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We report the creation of a low-loss, broadband optical antenna giving highly directed output from a coherent single spin in the solid-state. The device, the first solid-state realization of a dielectric antenna, is engineered for individual nitrogen vacancy (NV) electronic spins in diamond. We demonstrate a directionality close to 10. The photonic structure preserves the high spin coherence of single crystal diamond (T2>100us). The single photon count rate approaches a MHz facilitating efficient spin readout. We thus demonstrate a key enabling technology for quantum applications such as high-sensitivity magnetometry and long-distance spin entanglement.
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Submitted 18 August, 2014;
originally announced August 2014.
