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Defect detection in III-V multijunction solar cells using reverse-bias stress tests
Authors:
Aitana Cano,
Iván García,
Ignacio Rey-Stolle,
Pablo Martín,
Veronica Braza,
Daniel Fernandez
Abstract:
Reverse biasing triple-junction GaInP/Ga(In)As/Ge solar cells may affect their performance by the formation of permanent shunts even if the reverse breakdown voltage is not reached. In previous works, it was observed that, amid the three components, GaInP subcells are more prone to degrade when reverse biased suffering permanent damage, although they present an initial good performance. The aim of…
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Reverse biasing triple-junction GaInP/Ga(In)As/Ge solar cells may affect their performance by the formation of permanent shunts even if the reverse breakdown voltage is not reached. In previous works, it was observed that, amid the three components, GaInP subcells are more prone to degrade when reverse biased suffering permanent damage, although they present an initial good performance. The aim of this work is, firstly, to study the characteristics of the defects that cause the catastrophic failure of the devices. For this, GaInP isotype solar cells were analysed by visual inspection and electroluminescence maps and submitted to reverse bias stress test. We find that specific growth defects (i.e. hillocks), when covered with metal, cause the degradation in the cells. SEM cross-section imaging and EDX compositional analysis of these defects reveal their complex structures, which in essence consist of material abnormally grown on and around particles present on the wafer surface before growth. The reverse bias stress test is proposed as a screening method to spot defects hidden under the metal that may not be detected by conventional screening methods. By applying a quick reverse bias stress test, we can detect those defects that cause the degradation of devices at voltages below the breakdown voltage and that may also affect their long-term reliability.
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Submitted 2 April, 2025;
originally announced April 2025.
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Arsenic diffusion in MOVPE-Grown GaAs/Ge epitaxial structures
Authors:
V. Orejuela,
E. Garcia-Tabares,
I. Rey-Stolle,
I. Garcia
Abstract:
Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics and thermophotovoltaics. Its combination with III-V compound semiconductors through epitaxial growth by metal organic vapor phase epitaxy (MOVPE) is instrumental and thus, the comprehension of the sequential stages in such epitaxial processes is of great im…
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Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics and thermophotovoltaics. Its combination with III-V compound semiconductors through epitaxial growth by metal organic vapor phase epitaxy (MOVPE) is instrumental and thus, the comprehension of the sequential stages in such epitaxial processes is of great importance. During the deposition of GaAs on p-type Ge, the formation of n/p junctions occurs when As diffuses into Ge. It is found that this formation begins in the so-called AsH3 preexposure where Ge substrate is firstly exposed to AsH3. Also important is the fact that both free carrier profiles and As profiles indicate that prolonged AsH3 preexposure times lead to deeper diffusion depths for the same process time. This effect is concomitant with the degradation of the Ge surface morphology, characterized by higher roughness as the AsH3 preexposure duration is extended. Contrary to ion-implanted As in germanium, which shows quadratic dependent diffusivity, our MOVPE investigation using AsH3 indicates a linear relationship, consistent with Takenaka et al.'s MOVPE study using TBAs. Analyzing As profiles alongside simulations, with and without subsequent GaAs epitaxy, suggests the generation of Ge vacancies during the process, contributing to deeper As diffusion.
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Submitted 16 April, 2024;
originally announced April 2024.
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Evidence of enhanced Zn-diffusion observed during the growth of Inverted Metamorphic Solar Cells
Authors:
Manuel Hinojosa,
Ivan Garcia,
Ignacio Rey-Stolle,
Carlos Algora
Abstract:
Zinc-diffusion can induce multiple failures in the electrical performance of a multijunction solar cell. In this work, we show an important Zn-diffusion from the AlGaInP back-surface-field layer to the emitter of the GaInP top cell of an inverted multijunction solar cell. Through the analysis of different doping profiles, we provide strong evidence that the diffusion mechanism is (1) triggered by…
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Zinc-diffusion can induce multiple failures in the electrical performance of a multijunction solar cell. In this work, we show an important Zn-diffusion from the AlGaInP back-surface-field layer to the emitter of the GaInP top cell of an inverted multijunction solar cell. Through the analysis of different doping profiles, we provide strong evidence that the diffusion mechanism is (1) triggered by the growth of the tunnel junction cathode and (2) involves point defects. We analyze the implications of Zn-diffusion on the bandgap, the rear-passivation and the minority carrier quality of the GaInP solar subcell by relating the electrical performance of different samples to its corresponding doping profile.
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Submitted 3 May, 2022;
originally announced May 2022.
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Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates
Authors:
Ivan García,
Laura Barrutia,
Shabnam Dadgostar,
Manuel Hinojosa,
Andrew Johnson,
Ignacio Rey-Stolle
Abstract:
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical analysis performed using realistic device parameters indicates that the GaInAs middle cell can be drastically thinned to 1000 nm while increasing its In content to 8%…
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Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical analysis performed using realistic device parameters indicates that the GaInAs middle cell can be drastically thinned to 1000 nm while increasing its In content to 8% with an efficiency loss in the 3-junction cell below 3%. The experimental results show that the formation of macroscopic cracks is prevented in thinned GaInAs/Ge 2-junction and GaInP/GaInAs/Ge 3-junction cells. These prototype crack-free multijunction cells demonstrate the concept and were used to rule out any possible component integration issue. The performance metrics are limited by the high threading dislocation density over 2e7cm-2 in the virtual substrates used, but an almost current matched, crack-free, thinned 3-junction solar cell is demonstrated, and the pathway towards solar cells with higher voltages identified.
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Submitted 7 April, 2021;
originally announced April 2021.
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High-Low Refractive Index Stacks for Broadband Antireflection Coatings for Multijunction Solar Cells
Authors:
GuoJiao Hou,
Iván García,
Ignacio Rey-Stolle
Abstract:
Antireflection coatings are an interesting challenge for multijunction solar cells due to their broadband spectrum absorption and the requirement of current matching of each subcell. A new design for multijunction solar cell antireflection coatings is presented in this work in which alternative high and low index materials are used to minimize the reflection in a broadband (300nm-1800nm). We compa…
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Antireflection coatings are an interesting challenge for multijunction solar cells due to their broadband spectrum absorption and the requirement of current matching of each subcell. A new design for multijunction solar cell antireflection coatings is presented in this work in which alternative high and low index materials are used to minimize the reflection in a broadband (300nm-1800nm). We compared the short circuit current density of high-low refractive index stacks designs with optimum double-layer antireflection coatings by considering two optical materials combinations (MgF2/ZnS and Al2O3/TiO2) for the AM0 and AM1.5D spectra. The calculations demonstrate that for lattice-matched triple-junction solar cells and inverted metamorphic quadruple-junction solar cells, high-low refractive index stacks outperform the optimum double-layer antireflection coatings. The new design philosophy requires no new optical materials because only two materials are used and exhibits excellent performance in broadband spectra. The angle performance of these antireflection coatings is slightly better than classical double-layers whereas the analysis for thickness sensitivity shows that small deviations from deposition targets only slightly impact the performance of antireflection coatings. Finally, some technical solutions for depositing these high-low refractive index multilayers are discussed.
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Submitted 18 January, 2021;
originally announced January 2021.
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On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells
Authors:
Laura Barrutia,
IvÁn Lombardero1,
Mario Ochoa,
Mercedes GabÁs,
IvÁn GarcÍa,
TomÁs Palacios,
Andrew Johnson,
Ignacio Rey-Stolle,
Carlos Algora
Abstract:
Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below 16%. Therefore, the photovoltaic potential of graphene has not been already shown. In this work the use of graphene for concentration applications on III-V mul…
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Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below 16%. Therefore, the photovoltaic potential of graphene has not been already shown. In this work the use of graphene for concentration applications on III-V multijunction solar cells, which indeed are the solar cells with the highest efficiency, is demonstrated. Firstly, a wide optoelectronic characterization of graphene layers is carried out. Then, the graphene layer is incorporated onto triple-junction solar cells, which decreases their series resistance by 35% (relative), leading to an increase in Fill Factor of 4% (absolute) at concentrations of 1,000 suns. Simultaneously, the optical absorption of graphene produces a relative short circuit current density decrease in the range of 0-1.8%. As a result, an absolute efficiency improvement close to 1% at concentrations of 1,000 suns was achieved with respect to triple junction solar cells without graphene. The impact of incorporating one and two graphene monolayers is also evaluated.
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Submitted 13 July, 2020;
originally announced July 2020.
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Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells
Authors:
Laura Barrutia,
Ivan García,
Enrique Barrigon,
Mario Ochoa,
Carlos Algora,
Ignacio Rey-Stolle
Abstract:
This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar cells with these designs is significantly affected (up to 50 mV for the best optimization routine),…
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This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar cells with these designs is significantly affected (up to 50 mV for the best optimization routine), whereas minimal differences in short circuit current are observed. Electroluminescence measurements show that both the Ge bottom cell and the Ga(In)As middle cell present a VOC gain of 25 mV each. This result indicates that the first stages of the growth not only affect the Ge subcell itself but also to subsequent subcells. This study highlights the impact of the nucleation routine design in the performance of high efficiency multijunction solar cell based on Ge substrates.
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Submitted 2 July, 2020;
originally announced July 2020.
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Inverted rear-heterojunction GaInP solar cells using Te memory effect
Authors:
Manuel Hinojosa,
Iván García,
Ignacio Rey-Stolle,
Carlos Algora
Abstract:
Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of MOVPE-grown GaInP by reducing the group-III sublattice ordering and presents a strong memory effect which induces residual n-type doping in subsequent layers, potentially detrimental to the performance of the solar cell.…
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Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of MOVPE-grown GaInP by reducing the group-III sublattice ordering and presents a strong memory effect which induces residual n-type doping in subsequent layers, potentially detrimental to the performance of the solar cell. In this work, we present an inverted rear-heterojunction GaInP solar cell that employs a thick Te-doped GaInP layer as absorber, with a doping profile obtained exclusively by controlling the memory effect of Te coming from the preceding growth of a heavily doped GaAs contact layer. In this way, GaInP is partially disordered with the use of no additional surfactant, leading to an increase in the solar cell bandgap of around 35 meV as compared to traditional samples doped with silicon. In the proof-of-concept experimental devices developed so far, the use of a rear-heterojunction configuration and the bandgap increase results in a global open-circuit voltage enhancement of 109 mV. The photocurrent decreases by 1.32 mA/cm2, mostly due to the bandgap blue-shift, with about 0.35 mA/cm2 attributable to lower carrier collection efficiencies. These preliminary results are discussed by analyzing the I-V curve parameters and quantum efficiencies of a Te-doped rear-heterojunction, a Si-doped rear-heterojunction and a Si-doped front-junction solar cell. An additional advantage is that the emitter sheet resistance is reduced from 551 to 147 ohms/sq, which offers potential for higher efficiencies through lower front grid shadowing factors, as demonstrated with the concentrator measurements presented.
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Submitted 26 November, 2019;
originally announced November 2019.
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Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges
Authors:
Iván García,
Manuel Hinojosa,
Iván Lombardero,
Luis Cifuentes,
Ignacio Rey-Stolle,
Carlos Algora,
Huy Nguyen,
Stuart Edwards,
Aled Morgan,
Andrew Johnson
Abstract:
Virtual substrates based on thin Ge layers on Si by direct deposition have achieved high quality recently. Their application to high efficiency III-V solar cells is analyzed in this work. Replacing traditional Ge substrates with Ge/Si virtual substrates in standard lattice-matched and upright metamorphic GaInP/Ga(In)As/Ge solar cells is feasible according to our calculations using realistic parame…
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Virtual substrates based on thin Ge layers on Si by direct deposition have achieved high quality recently. Their application to high efficiency III-V solar cells is analyzed in this work. Replacing traditional Ge substrates with Ge/Si virtual substrates in standard lattice-matched and upright metamorphic GaInP/Ga(In)As/Ge solar cells is feasible according to our calculations using realistic parameters of state-of-the-art Ge solar cells but with thin bases (< 5um). The first experimental steps are tackled by implementing Ge single-junction and full GaInP/Ga(In)As/Ge triple-junction solar cells on medium quality Ge/Si virtual substrates with 5um thick Ge layers. The results show that the photocurrent in the Ge bottom cell is barely enough to achieve current matching with the upper subcells, but the overall performance is poor due to low voltages in the junctions. Moreover, observed cracks in the triple-junction structure point to the need to reduce the thickness of the Ge + III-V structure or using other advanced approaches to mitigate the thermal expansion coefficient mismatch effects, such as using embedded porous silicon. Next experimental work will pursue this objective and use more advanced Ge/Si virtual substrates available with lower threading dislocation densities and different Ge thicknesses.
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Submitted 19 September, 2019;
originally announced September 2019.
