Showing 1–2 of 2 results for author: Rencz, M

Vibration Combined High Temperature Cycle Tests for Capacitive MEMS Accelerometers

Authors: Z. Szucs, G. Nagy, S. Hodossy, M. Rencz, A. Poppe

Abstract: In this paper vibration combined high temperature cycle tests for packaged capacitive SOI-MEMS accelerometers are presented. The aim of these tests is to provide useful Design for Reliability information for MEMS designers. A high temperature test chamber and a chopper-stabilized read-out circuitry were designed and realized at BME - DED. Twenty thermal cycles of combined Temperature Cycle Test… ▽ More In this paper vibration combined high temperature cycle tests for packaged capacitive SOI-MEMS accelerometers are presented. The aim of these tests is to provide useful Design for Reliability information for MEMS designers. A high temperature test chamber and a chopper-stabilized read-out circuitry were designed and realized at BME - DED. Twenty thermal cycles of combined Temperature Cycle Test and Fatigue Vibration Test has been carried out on 5 samples. Statistical evaluation of the test results showed that degradation has started in 3 out of the 5 samples. △ Less

Submitted 7 January, 2008; originally announced January 2008.

Comments: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Journal ref: Dans 13th International Worshop on THERMal INvestigations of ICs and Systems - THERMINIC 2007, Budapest : Hongrie (2007)

Short time die attach characterisation of semiconductor devices

Authors: P. Szabo, M. Rencz

Abstract: Thermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this layer may cause higher temperature elevation and thus damage or shorter lifetime. Thermal test of each device in the manufacturing process would be the best… ▽ More Thermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this layer may cause higher temperature elevation and thus damage or shorter lifetime. Thermal test of each device in the manufacturing process would be the best solution for eliminating the devices with wrong die attach layer. In this paper we will present the short time thermal transient measurement method and the structure function evaluation through simulations and measurements for die attach characterization. We will also present a method for eliminating the very time consuming calibration process. Using the proposed methods even the in-line testing of LEDs can be accomplished. △ Less

Submitted 7 January, 2008; originally announced January 2008.

Comments: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Journal ref: Dans 13th International Worshop on THERMal INvestigations of ICs and Systems - THERMINIC 2007, Budapest : Hongrie (2007)