Showing 1–6 of 6 results for author: Reboud, V

One Million Quality Factor Integrated Ring Resonators in the Mid-Infrared

Authors: Marko Perestjuk, Rémi Armand, Miguel Gerardo Sandoval Campos, Lamine Ferhat, Vincent Reboud, Nicolas Bresson, Jean-Michel Hartmann, Vincent Mathieu, Guanghui Ren, Andreas Boes, Arnan Mitchell, Christelle Monat, Christian Grillet

Abstract: We report ring resonators on a silicon germanium on silicon platform operating in the mid-infrared wavelength range around 3.5 - 4.6 μm with quality factors reaching up to one million. Advances in fabrication technology enable us to demonstrate such high Q-factors, which put silicon germanium at the forefront of mid-infrared integrated photonic platforms. The achievement of high Q is attested by t… ▽ More We report ring resonators on a silicon germanium on silicon platform operating in the mid-infrared wavelength range around 3.5 - 4.6 μm with quality factors reaching up to one million. Advances in fabrication technology enable us to demonstrate such high Q-factors, which put silicon germanium at the forefront of mid-infrared integrated photonic platforms. The achievement of high Q is attested by the observation of degeneracy lifting between clockwise (CW) and counter-clockwise (CCW) resonances, as well as optical bistability due to an efficient power buildup in the rings. △ Less

Submitted 13 December, 2024; originally announced December 2024.

Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap

Authors: Francesco Armand Pilon, Yann-Michel Niquet, Jeremie Chretien, Nicolas Pauc, Vincent Reboud, Vincent Calvo, Julie Widiez, Jean Michel Hartmann, Alexei Chelnokov, Jerome Faist, Hans Sigg

Abstract: Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeS… ▽ More Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeSn, for example - could be an alternative, provided their performance can be improved. Such progresses will come with better materials but also with the development of a profounder understanding of their optical properties. In this work, we demonstrate, using Ge microbridges with strain up to 6.6%, a powerful method for determining the population inversion gain and the material and optical losses of group IV lasers. This is made by deriving the values for the injection carrier densities and the cavity losses from the measurement of the change of the refractive index and the mode linewidth, respectively. We observe a laser threshold consistent with optical gain and material loss values obtained from a tight binding calculation. Lasing in Ge - at steady-state - is found to be limited to low temperatures in a narrow regime of tensile strain at the crossover to the direct band gap bandstructure. We explain this observation by parasitic intervalence band absorption that increases rapidly with higher injection densities and temperature. N-doping seems to reduce the material loss at low excitation but does not extend the lasing regime. We also discuss the impact of the optically inactive carriers in the L-valley on the linewidth of group IV lasers. △ Less

Submitted 17 June, 2022; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: 29 pages, 70 references, 15 figures

Journal ref: Physical Review Research 4, 033050 (2022)

Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

Authors: Anas Elbaz, Riazul Arefin, Emilie Sakat, Binbin Wang, Etienne Herth, Gilles Patriarche, Antonino Foti, Razvigor Ossikovski, Sebastien Sauvage, Xavier Checoury, Konstantinos Pantzas, Isabelle Sagnes, Jérémie Chrétien, Lara Casiez, Mathieu Bertrand, Vincent Calvo, Nicolas Pauc, Alexei Chelnokov, Philippe Boucaud, Frederic Boeuf, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi

Abstract: GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless su… ▽ More GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources. △ Less

Submitted 21 December, 2020; originally announced December 2020.

Comments: 30 pages, 9 figures

Journal ref: ACS Photonics 2020, 7, 10, 2713-2722

Lasing in Group-IV materials

Authors: V. Reboud, D. Buca, H. Sigg, J. M. Hartmann, Z. Ikonic, N. Pauc, V. Calvo, P. Rodriguez, A. Chelnokov

Abstract: Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with large-volume fabrication. However, silicon photonics does not yet cover a l… ▽ More Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with large-volume fabrication. However, silicon photonics does not yet cover a large portion of applications in the mid-IR. In the 2 to 5 um wavelength range, environmental sensing, life sensing, and security all rely on optical signatures of molecular vibrations to identify complex individual chemical species. The markets for such analysis are huge and constantly growing, with a push for sensitivity, specificity, compactness, low-power operation and low cost. An all-group-IV, CMOS-compatible mid-IR integrated photonic platform would be a key enabler in this wavelength range. As for other wavelengths, such a platform should be complete with low-loss guided interconnects, detectors, modulators, eventually, and most importantly efficient and integrated light sources. This chapter reviews recent developments in the fields of mid-IR silicon-compatible optically and electrically pumped lasers, light emitting diodes and photodetectors based on Ge, GeSn and SiGeSn alloys. It contains insights into the fundamentals of these developments, including band structure modelling, material growth and processing techniques. △ Less

Submitted 18 December, 2020; originally announced December 2020.

Comments: Silicon Photonics IV: Innovative Frontiers, edited by David J. Lockwood and Lorenzo Pavesi, Springer series Topics in Applied Physics (2021)

Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K

Authors: V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, V. Calvo

Abstract: Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resu… ▽ More Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K. △ Less

Submitted 21 April, 2017; originally announced April 2017.

Comments: 15 pages with supplementary information. 6 figures and 2 tables in total

Uniaxially stressed germanium with fundamental direct band gap

Authors: R. Geiger, T. Zabel, E. Marin, A. Gassenq, J. -M. Hartmann, J. Widiez, J. Escalante, K. Guilloy, N. Pauc, D. Rouchon, G. Osvaldo Diaz, S. Tardif, F. Rieutord, I. Duchemin, Y. -M. Niquet, V. Reboud, V. Calvo, A. Chelnokov, J. Faist, H. Sigg

Abstract: We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a… ▽ More We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain. △ Less

Submitted 10 December, 2015; originally announced March 2016.

Comments: 9 pages, 8 figures