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Broad Band Single Germanium Nanowire Photodetectors with Surface Oxide Controlled High Optical Gain
Authors:
Shaili Sett,
Ankita Ghatak,
Deepak Sharma,
G. V. Pavan Kumar,
A. K. Raychaudhuri
Abstract:
We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by Vapor Liquid Solid method using Au nanoparticle as catalyst. In this report we discuss the likely origin of the ultra large responsivity that may arise from a com…
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We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by Vapor Liquid Solid method using Au nanoparticle as catalyst. In this report we discuss the likely origin of the ultra large responsivity that may arise from a combination of various physical effects which are a): Ge and GeO_{x} interface states which act as scavengers of electrons from the photo-generated pairs,leaving the holes free to reach the electrodes,b) Schottky barrier at the metal and NW interface which gets lowered substantially due to carrier diffusion in contact region and (c) photodetector length being small (approximately few μm), negligible loss of photogenerated carriers due to recombination at defect sites. We have observed from power dependence of the optical gain that the gain is controlled by trap states. We find that the surface of the nanowire has presence of a thin layer of GeO_{x} (as evidenced from HRTEM study) which provide interface states. It is observed that these state play a crucial role to provide a radial field for separation of photogenerated electron and hole pair which in turn leads to very high effective photoconductive gain that reaches a very high at low illumination density.
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Submitted 24 July, 2020;
originally announced July 2020.
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Enhanced broad band photoresponse of a partially suspended horizontal array of Silicon microlines fabricated on Silicon-On-Insulator wafers
Authors:
Shaili Sett,
Vishal Kumar Aggarwal,
Achintya Singha,
Sandip Bysakh,
A. K. Raychaudhuri
Abstract:
We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The a…
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We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The array detector under full illumination of the device shows a peak Responsivity of 18 A/W at 800 nm, at a bias of 1V which is more than an order of magnitude of the Responsivity in a commercial Si detector. In a broad band of 400 nm to 1000 nm the Responsivity of the detector is in excess of 10A/W. We found that the suspension of the microlines in the array is necessary to obtain such high Responsivity. The suspension isolates the microlines from the bulk of the wafer and inhibits carrier recombination by the underlying oxide layer leading to enhanced photo-response. This has been validated through simulation. By using focused illumination of selected parts of a single microline of the array, we could isolate the contributions of the different parts of the microline to the photo-current.
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Submitted 11 July, 2020;
originally announced July 2020.
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Temperature-dependent thermal conductivity of a single Germanium nanowire measured by Optothermal Raman Spectroscopy
Authors:
S. Sett,
V. K. Aggarwal,
A. Singha,
A. K. Raychaudhuri
Abstract:
We investigate temperature dependent thermal conductivity k(T) in a single Ge nanowire (NW) using Optothermal Raman Spectroscopy which utilizes the temperature dependence of Raman lines as a local probe for temperature. The experiment was done from 300 K to above 700 K, a temperature range in which thermal conductivity of single NWs has been explored rarely. The thermal conductivity of Ge NWs (gro…
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We investigate temperature dependent thermal conductivity k(T) in a single Ge nanowire (NW) using Optothermal Raman Spectroscopy which utilizes the temperature dependence of Raman lines as a local probe for temperature. The experiment was done from 300 K to above 700 K, a temperature range in which thermal conductivity of single NWs has been explored rarely. The thermal conductivity of Ge NWs (grown by vapor liquid solid mechanism), at around room temperature were observed to lie in the range 1.8 to 4.2 W/m.K for diameters between 50 to 110 nm. The thermal conductivity at a given temperature was found to follow a linear dependence on NW diameter, suggesting that the low magnitude of k(T) is determined by diffused scattering of phonons from the surface of NWs that reduces it severely from its bulk value. k(T) shows approximately 1/T behavior which arises from the Umklapp processes. The quantitative estimation of errors arising from the Optothermal measurement and methods to mitigate them has been discussed. We also suggest a quick way to estimate approximately the thermal conductivity of Ge and Si NWs using the above observations.
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Submitted 20 May, 2020;
originally announced May 2020.
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Physics Potential of the ICAL detector at the India-based Neutrino Observatory (INO)
Authors:
The ICAL Collaboration,
Shakeel Ahmed,
M. Sajjad Athar,
Rashid Hasan,
Mohammad Salim,
S. K. Singh,
S. S. R. Inbanathan,
Venktesh Singh,
V. S. Subrahmanyam,
Shiba Prasad Behera,
Vinay B. Chandratre,
Nitali Dash,
Vivek M. Datar,
V. K. S. Kashyap,
Ajit K. Mohanty,
Lalit M. Pant,
Animesh Chatterjee,
Sandhya Choubey,
Raj Gandhi,
Anushree Ghosh,
Deepak Tiwari,
Ali Ajmi,
S. Uma Sankar,
Prafulla Behera,
Aleena Chacko
, et al. (67 additional authors not shown)
Abstract:
The upcoming 50 kt magnetized iron calorimeter (ICAL) detector at the India-based Neutrino Observatory (INO) is designed to study the atmospheric neutrinos and antineutrinos separately over a wide range of energies and path lengths. The primary focus of this experiment is to explore the Earth matter effects by observing the energy and zenith angle dependence of the atmospheric neutrinos in the mul…
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The upcoming 50 kt magnetized iron calorimeter (ICAL) detector at the India-based Neutrino Observatory (INO) is designed to study the atmospheric neutrinos and antineutrinos separately over a wide range of energies and path lengths. The primary focus of this experiment is to explore the Earth matter effects by observing the energy and zenith angle dependence of the atmospheric neutrinos in the multi-GeV range. This study will be crucial to address some of the outstanding issues in neutrino oscillation physics, including the fundamental issue of neutrino mass hierarchy. In this document, we present the physics potential of the detector as obtained from realistic detector simulations. We describe the simulation framework, the neutrino interactions in the detector, and the expected response of the detector to particles traversing it. The ICAL detector can determine the energy and direction of the muons to a high precision, and in addition, its sensitivity to multi-GeV hadrons increases its physics reach substantially. Its charge identification capability, and hence its ability to distinguish neutrinos from antineutrinos, makes it an efficient detector for determining the neutrino mass hierarchy. In this report, we outline the analyses carried out for the determination of neutrino mass hierarchy and precision measurements of atmospheric neutrino mixing parameters at ICAL, and give the expected physics reach of the detector with 10 years of runtime. We also explore the potential of ICAL for probing new physics scenarios like CPT violation and the presence of magnetic monopoles.
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Submitted 9 May, 2017; v1 submitted 27 May, 2015;
originally announced May 2015.
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Structural and Optical properties of Zn(1-x)MgxO nanocrystals obtained by low temperature method
Authors:
Manoranjan Ghosh,
A. K. Raychaudhuri
Abstract:
In this paper we report structural and optical properties of Magnesium substituted Zinc Oxide (Zn1-xMgxO) nanocrystals (~10-12nm) synthesized by low temperature route. In the low temperature synthesis route it was possible to reach x = 0.17 without segregation of Mg rich phase. The exact chemical composition has been established by quantitative analysis. Rietveld analysis of the XRD data confirms…
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In this paper we report structural and optical properties of Magnesium substituted Zinc Oxide (Zn1-xMgxO) nanocrystals (~10-12nm) synthesized by low temperature route. In the low temperature synthesis route it was possible to reach x = 0.17 without segregation of Mg rich phase. The exact chemical composition has been established by quantitative analysis. Rietveld analysis of the XRD data confirms the Wurzite structure and a continuous compaction of the lattice (in particular the c-axis parameter) as x increases. There is an enhancement of the strain in the lattice as the Mg is substituted. The bandgap also gets enhanced as x is increased and reaches a value of 4eV for x = 0.17. From the TEM and the XRD data it has been concluded that when there is a phase segregation for x > 0.17, there is a shell of Mg(OH)2 on the ZnO. The absorption also shows persistence of the excitoinc absorption on Mg substitution. The nanocrystals show near band edge photo luminescence (PL) at room temperature which shows blue shift on Mg incorporation. In addition to the near band edge emission the ZnO and Zn1-xMg xO alloy nanocrystals show considerable emission in the blue-green region at wavelength of ~550 nm. We find that the relative intensity of the green emission increases with the Mg concentration for very low x (upto x = 0.05) and on further increase of the Mg concentration there is a sharp decrease of relative intensity of the green emission eventually leading to a complete quenching of blue emission. It is concluded that due to phase segregation (for x \geq 0.20), the formation of the shell of Mg(OH)2 on the ZnO leads to quenching of the green emission .However, this shell formation does not have much effect on the near band edge PL.
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Submitted 10 September, 2011;
originally announced September 2011.
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Direct observation of large temperature fluctuations during DNA thermal denaturation
Authors:
K. S. Nagapriya,
A. K. Raychaudhuri,
Dipankar Chatterji
Abstract:
In this paper we report direct measurement of large low frequency temperature fluctuations in double stranded (ds) DNA when it undergoes thermal denaturation transition. The fluctuation, which occurs only in the temperature range where the denaturation occurs, is several orders more than the expected equilibrium fluctuation. It is absent in single stranded (ss) DNA of the same sequence. The fluc…
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In this paper we report direct measurement of large low frequency temperature fluctuations in double stranded (ds) DNA when it undergoes thermal denaturation transition. The fluctuation, which occurs only in the temperature range where the denaturation occurs, is several orders more than the expected equilibrium fluctuation. It is absent in single stranded (ss) DNA of the same sequence. The fluctuation at a given temperature also depends on the wait time and vanishes in a scale of few hours. It is suggested that the large fluctuation occurs due to coexisting denaturated and closed base pairs that are in dynamic equilibrium due to transition through a potential barrier in the scale of 25-30k_{B}T_{0}(T_{0}=300K).
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Submitted 10 February, 2006; v1 submitted 6 January, 2005;
originally announced January 2005.
