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Timing performance of a digital SiPM prototype measured with a picosecond injection laser
Authors:
Daniil Rastorguev,
Inge Diehl,
Karsten Hansen,
Finn King,
Stephan Lachnit,
Simon Spannagel,
Tomas Vanat,
Gianpiero Vignola
Abstract:
The DESY digital silicon photomultiplier (dSiPM) is a monolithic detector based on complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diodes (SPADs) and features a fully digital readout. The dSiPM prototype was characterized using a picosecond injection laser. Different contributions to the time resolution from both SPADs and digitization electronics are quantified. The dSiPM a…
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The DESY digital silicon photomultiplier (dSiPM) is a monolithic detector based on complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diodes (SPADs) and features a fully digital readout. The dSiPM prototype was characterized using a picosecond injection laser. Different contributions to the time resolution from both SPADs and digitization electronics are quantified. The dSiPM achieves a temporal resolution of approximately 50 ps under optimal conditions, while localized charge deposition with the laser revealed in-pixel variations of the time resolution linked to the SPAD layout. Combining fast timing with a pixelated readout, the device is a promising candidate for 4D-tracking detectors and other precision timing applications.
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Submitted 5 May, 2025;
originally announced May 2025.
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Transient studies using a TCAD and Allpix Squared combination approach
Authors:
Manuel A. Del Rio Viera,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Judith Schlaadt,
Paul Schütze,
Adriana Simancas,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the s…
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The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the sensing element and thus the overall performance of the pixel detector. The response of the sensors can then be tested in laboratory and test beam facilities and compared to simulation results. Transient simulations allow for studying the response of the sensor as a function of time, such as the signal produced after a charged particle passes through the sensor. The study of these signals is important to understand the magnitude and timing of the response from the sensors and improve upon them. While TCAD simulations are accurate, the time required to produce a single pulse is large compared to a combination of MC and TCAD simulations. In this work, a validation of the transient simulation approach and studies on charge collection are presented.
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Submitted 10 February, 2025;
originally announced February 2025.
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Test Beam Characterization of a Digital Silicon Photomultiplier
Authors:
Finn King,
Inge Diehl,
Ono Feyens,
Ingrid-Maria Gregor,
Karsten Hansen,
Stephan Lachnit,
Frauke Poblotzki,
Daniil Rastorguev,
Simon Spannagel,
Tomas Vanat,
Gianpiero Vignola
Abstract:
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single photon avalanche diodes (SPADs) in commercial CMOS processes creates the opportunity to combine a matrix of SPADs and an application-specific integrated circuit…
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Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single photon avalanche diodes (SPADs) in commercial CMOS processes creates the opportunity to combine a matrix of SPADs and an application-specific integrated circuit in the same die. The potential of such digital SiPMs (dSiPMs) is still being explored, while it already is an established technology in certain applications, like light detection and ranging (LiDAR).
A prototype dSiPM, produced in the LFoundry 150-nm CMOS technology, was designed and tested at DESY. The dSiPM central part is a matrix of 32 by 32 pixels. Each pixel contains four SPADs, a digital front-end, and has an area of 69.6 $\times$ 76 um$^2$. The chip has four time-to-digital converters and includes further circuitry for data serialization and data links.
This work focuses on the characterization of the prototype in an electron beam at the DESY II Test Beam facility, to study its capability as a tracking and timing detector for minimum ionizing particles (MIPs). The MIP detection efficiency is found to be dominated by the fill factor and on the order of 31 %. The position of the impinging MIPs can be measured with a precision of about 20 um, and the time of the interaction can be measured with a precision better than 50 ps for about 85 % of the detected events. In addition, laboratory studies on the breakdown voltage, dark count rate, and crosstalk probability, as well as the experimental methods required for the characterization of such a sensor type in a particle beam are presented.
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Submitted 9 December, 2024;
originally announced December 2024.
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4D-Tracking with Digital SiPMs
Authors:
Inge Diehl,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Stephan Lachnit,
Daniil Rastorguev,
Simon Spannagel,
Tomas Vanat,
Gianpiero Vignola
Abstract:
Silicon Photomultipliers (SiPMs) are the state-of-the-art technology in single-photon detection with solid-state detectors. Single Photon Avalanche Diodes (SPADs), the key element of SiPMs, can now be manufactured in CMOS processes, facilitating the integration of a SPAD array into custom monolithic ASICs. This allows implementing features such as signal digitization, masking, full hit-map readout…
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Silicon Photomultipliers (SiPMs) are the state-of-the-art technology in single-photon detection with solid-state detectors. Single Photon Avalanche Diodes (SPADs), the key element of SiPMs, can now be manufactured in CMOS processes, facilitating the integration of a SPAD array into custom monolithic ASICs. This allows implementing features such as signal digitization, masking, full hit-map readout, noise suppression, and photon counting in a monolithic CMOS chip. The complexity of the off-chip readout chain is thereby reduced.
These new features allow new applications for digital SiPMs, such as 4D-tracking of charged particles, where spatial resolutions of the order of $10 μm$ and timestamping with time resolutions of a few tens of ps are required.
A prototype of a digital SiPM was designed at DESY using the LFoundry $150 nm$ CMOS technology. Various studies were carried out in the laboratory and at the DESY II test-beam facility to evaluate the sensor performance in Minimum Ionizing Particles (MIPs) detection. The direct detection of charged particles was investigated for bare prototypes and assemblies coupling dSiPMs and thin LYSO crystals. Spatial resolution $\sim20 μm$ and a full-system time resolution of $\sim50 ps$ are measured using bare dSiPMs in direct MIP detection. Efficiency $>99.5 \%$, low noise rate and time resolution $<1 ns$ can be reached with the thin radiator coupling.
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Submitted 7 September, 2024;
originally announced September 2024.
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Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
Authors:
Håkan Wennlöf,
Dominik Dannheim,
Manuel Del Rio Viera,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Lennart Huth,
Stephan Lachnit,
Larissa Mendes,
Daniil Rastorguev,
Sara Ruiz Daza,
Paul Schütze,
Adriana Simancas,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Alessandra Tomal,
Anastasiia Velyka,
Gianpiero Vignola
Abstract:
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an e…
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The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an example. The full simulation workflow is described, along with possible pitfalls and how to avoid them. For commercial CMOS processes, detailed doping profiles are confidential, but the presented method provides an optimisation tool that is sufficiently accurate to investigate sensor behaviour and trade-offs of different sensor designs without knowledge of proprietary information.
The workflow starts with detailed electric field finite element method simulations in TCAD, using generic doping profiles. Examples of the effect of varying different parameters of the simulated sensor are shown, as well as the creation of weighting fields, and transient pulse simulations. The fields resulting from TCAD simulations can be imported into the Allpix Squared Monte Carlo simulation framework, which enables high-statistics simulations, including modelling of stochastic fluctuations from the underlying physics processes of particle interaction. Example Monte Carlo simulation setups are presented and the different parts of a simulation chain are described.
Simulation studies from small collection electrode CMOS sensors are presented, and example results are shown for both single sensors and multiple sensors in a test beam telescope configuration. The studies shown are those typically performed on sensor prototypes in test beam campaigns, and a comparison is made to test beam data, showing a maximum deviation of 4% and demonstrating that the approach is viable for generating realistic results.
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Submitted 31 July, 2024;
originally announced August 2024.
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Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology
Authors:
Adriana Simancas,
Justus Braach,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Manuel Del Rio Viera,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Judith Schlaadt,
Paul Schütze,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improv…
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Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach.
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Submitted 22 February, 2024;
originally announced February 2024.
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The DESY Digital Silicon Photomultiplier: Device Characteristics and First Test-Beam Results
Authors:
Finn Feindt,
Inge Diehl,
Karsten Hansen,
Stephan Lachnit,
Frauke Poblotzki,
Daniil Rastorguev,
Simon Spannagel,
Tomas Vanat,
Gianpiero Vignola
Abstract:
Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few tens of picoseconds, which makes them interesting candidates for timing detectors in tracking systems for particle physics experiments. The Geiger discharges trig…
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Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few tens of picoseconds, which makes them interesting candidates for timing detectors in tracking systems for particle physics experiments. The Geiger discharges triggered in the sensitive elements of a SiPM, Single-Photon Avalanche Diodes (SPADs), yield signal amplitudes independent of the energy deposited by a photon or ionizing particle. This intrinsically digital nature of the signal motivates its digitization already on SPAD level.
A digital SiPM (dSiPM) was designed at Deutsches Elektronen Synchrotron (DESY), combining a SPAD array with embedded CMOS circuitry for on-chip signal processing. A key feature of the DESY dSiPM is its capability to provide hit-position information on pixel level, and one hit time stamp per quadrant at a 3 MHz readout-frame rate. The pixels comprise four SPADs and have a pitch of about 70 um. The four time stamps are provided by 12 bit Time-to-Digital Converters (TDCs) with a resolution better than 100 ps.
The chip was characterized in the laboratory to determine dark count rate, breakdown voltage, and TDC characteristics. Test-beam measurements are analyzed to assess the DESY dSiPMs performance in the context of a 4D-tracking applications. The results demonstrate a spatial hit resolution on a pixel level, a minimum-ionizing particle detection efficiency of about 30 % and a time resolution in the order of 50 ps.
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Submitted 31 January, 2025; v1 submitted 19 February, 2024;
originally announced February 2024.
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Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~μ$m pixel pitch
Authors:
I. Diehl,
K. Hansen,
T. Vanat,
G. Vignola,
F. Feindt,
D. Rastorguev,
S. Spannagel
Abstract:
This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32$~\times~$32 pixel matrix at 70$~μ$m pitch. The IC provides per-quadrant time stamping and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sha…
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This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32$~\times~$32 pixel matrix at 70$~μ$m pitch. The IC provides per-quadrant time stamping and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sharing a quenching and subsequent processing circuitry and has a fill factor of 30$~\%$. A sub-100$~$ps precision, 12-bit time-to-digital converter (TDC) provides timestamps per quadrant with an acquisition rate of 3$~$MHz. Together with the hit map, the total sustained data throughput of the IC amounts to 4$~$Gbps. Measurements obtained in a dark, temperature-stable environment as well as by using a pulsed laser environment show the full dSiPM-IC functionality. The dark-count rate (DCR) as function of the overvoltage and temperature, the TDC resolution, differential and integral nonlinearity (DNL/INL) as well as the propagation-delay variations across the matrix are presented. With aid of additional peripheral test structures, the main building blocks are characterized and key parameters are presented.
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Submitted 22 November, 2023;
originally announced November 2023.
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Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors
Authors:
Adriana Simancas,
Justus Braach,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Manuel Del Rio Viera,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Paul Schütze,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scatterin…
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Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. The Tangerine Project WP1 at DESY participates in the Strategic R&D Programme and is focused on the development of a monolithic active pixel sensor with a time and spatial resolution compatible with the requirements for a future lepton collider vertex detector. By fulfilling these requirements, the Tangerine detector is suitable as well to be used as telescope planes for the DESY-II Test Beam facility. The project comprises all aspects of sensor development, from the electronics engineering and the sensor design using simulations, to laboratory and test beam investigations of prototypes. Generic TCAD Device and Monte-Carlo simulations are used to establish an understanding of the technology and provide important insight into performance parameters of the sensor. Testing prototypes in laboratory and test beam facilities allows for the characterization of their response to different conditions. By combining results from all these studies it is possible to optimize the sensor layout. This contribution presents results from generic TCAD and Monte-Carlo simulations, and measurements performed with test chips of the first sensor submission.
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Submitted 31 March, 2023;
originally announced March 2023.
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Towards a New Generation of Monolithic Active Pixel Sensors
Authors:
Ankur Chauhan,
Manuel Del Rio Viera,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Paul Schütze,
Adriana Simancas,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. In addition, they allow for significant red…
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A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. In addition, they allow for significant reductions of the material budget of detector systems, due to the smaller physical thicknesses of the active sensor and the absence of a separate readout chip. The TANGERINE project develops a sensor suitable for future Higgs factories as well as for a beam telescope to be used at beam-test facilities. The sensors will have small collection electrodes (order of $μ$m) to maximize the signal-to-noise ratio, which makes it possible to minimize power dissipation in the circuitry. The first batch of test chips, featuring full front-end amplifiers with Krummenacher feedback, was produced and tested at the Mainzer Mikrotron (MAMI) at the end of 2021. MAMI provides an electron beam with currents up to 100 $μ$A and an energy of 855 MeV. The analog output signal of the test chips was recorded with a high bandwidth oscilloscope and used to study the charge-sensitive amplifier of the chips in terms of waveform analysis. A beam telescope was used as a reference system to allow for track-based analysis of the recorded data.
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Submitted 18 October, 2022;
originally announced October 2022.
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The Tangerine project: Development of high-resolution 65 nm silicon MAPS
Authors:
Håkan Wennlöf,
Ankur Chauhan,
Manuel Del Rio Viera,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Paul Schütze,
Adriana Simancas,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola
Abstract:
The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection electrode. This is the first application of this process in particle physics, and it is of great interest as it allows for an increased logic density and reduced…
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The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection electrode. This is the first application of this process in particle physics, and it is of great interest as it allows for an increased logic density and reduced power consumption and material budget compared to other processes. The process is envisioned to be used in for example the next ALICE inner tracker upgrade, and in experiments at the electron-ion collider.
The initial goal of the three-year Tangerine project is to develop and test a sensor in a 65 nm CMOS imaging process that can be used in test beam telescopes at DESY, providing excellent spatial resolution and high time resolution, and thus demonstrating the capabilities of the process. The project covers all aspects of sensor R&D, from electronics and sensor design using simulations, to prototype test chip characterisation in labs and at test beams. The sensor design simulations are performed by using a powerful combination of detailed electric field simulations using technology computer-aided design and high-statistics Monte Carlo simulations using the Allpix Squared framework. A first prototype test chip in the process has been designed and produced, and successfully operated and tested both in labs and at test beams.
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Submitted 11 June, 2022;
originally announced June 2022.
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Visualization of radiotracers for SPECT imaging using a Timepix detector with a coded aperture
Authors:
V. Rozhkov,
G. Chelkov,
I. Hernández,
O. Ivanov,
D. Kozhevniko,
A. Leyva,
A. Perera,
D. Rastorguev,
P. Smolyanskiy,
L. Torres,
A. Zhemchugov
Abstract:
The work shows the ability to visualize radiotracers used in SPECT with a system based on a coded aperture mask and a hybrid pixel Timepix detector with the CdTe sensor. Characterization of the system using X-rays and radioactive sources confirms that the spatial resolution of less than 1 mm with a field of view 3 cm x 3 cm can be achieved. The results of a simulation study to determine the expect…
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The work shows the ability to visualize radiotracers used in SPECT with a system based on a coded aperture mask and a hybrid pixel Timepix detector with the CdTe sensor. Characterization of the system using X-rays and radioactive sources confirms that the spatial resolution of less than 1 mm with a field of view 3 cm x 3 cm can be achieved. The results of a simulation study to determine the expected spatial resolution of the system in the focal plane for the various radionuclides is presented. The possibility of using this system with a thin (1.5 mm) coded aperture mask for reconstructing images of gamma emitters with the energy up to 180 keV is demonstrated.
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Submitted 28 May, 2020; v1 submitted 20 April, 2020;
originally announced April 2020.
