Showing 1–8 of 8 results for author: Ramsteiner, M

Large-area synthesis of ferromagnetic Fe$_{5-x}$GeTe$_{2}$/graphene van der Waals heterostructures with Curie temperature above room temperature

Authors: H. Lv, A. da Silva, A. I. Figueroa, C. Guillemard, I. Fernández Aguirre, L. Camosi, L. Aballe, M. Valvidares, S. O. Valenzuela, J. Schubert, M. Schmidbauer, J. Herfort, M. Hanke, A. Trampert, R. Engel-Herbert, M. Ramsteiner, J. M. J. Lopes

Abstract: Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly… ▽ More Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly uniform heterostructures with well-defined interfaces between different 2D layered materials. It also requires that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, we demonstrate large-area growth of Fe$_{5-x}$GeTe$_{2}$/graphene heterostructures achieved by vdW epitaxy of Fe$_{5-x}$GeTe$_{2}$ on epitaxial graphene. Structural characterization confirmed the realization of a continuous vdW heterostructure film with a sharp interface between Fe$_{5-x}$GeTe$_{2}$ and graphene. Magnetic and transport studies revealed that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond non-scalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications. △ Less

Submitted 17 March, 2023; originally announced March 2023.

Journal ref: Small (2023), 2302387

Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3(110): Growth window, strain relaxation, and domain pattern

Authors: Georg Hoffmann, Martina Zupancic, Detlef Klimm, Robert Schewski, Martin Albrecht, Manfred Ramsteiner, Oliver Bierwagen

Abstract: We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In a thermodynamics of MBE (TOMBE) diagram, the experimental growth window was found to be significantly narrower than the predicted one. We found the critical th… ▽ More We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In a thermodynamics of MBE (TOMBE) diagram, the experimental growth window was found to be significantly narrower than the predicted one. We found the critical thickness for strain relaxation of the LaInO3 layer (lattice mismatch $\approx$ -4$\%$) to be of 1 nm using in-situ RHEED analysis. Substrate and film possess an orthorhombic crystal structure which can be approximated by a pseudo-cubic lattice. X-ray-diffraction (XRD) analysis revealed the pseudo-cube-on-pseudo-cube epitaxial relationship ofthe LaInO3 films to the DyScO3 substrates. This relation was confirmed by transmission electron microscopy (TEM), which further resolved the presence of rotational orthorhombic domains - the majority of which have coinciding c-axis with that of the substrate. Raman spectroscopy further confirmed the presence of a LaInO3 layer. Our findings open up the possibility for 2-dimensional electron gases at the MBE-grown heterointerface with BaSnO3. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Comments: 9 pages, 11 figures

Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency

Authors: Miriam Oliva, Timur Flissikowski, Michał Góra, Jonas Lähnemann, Jesús Herranz, Ryan B. Lewis, Oliver Marquardt, Manfred Ramsteiner, Lutz Geelhaar, Oliver Brandt

Abstract: GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is crucial to understand their interaction with light governing the absorption and extraction efficiency, as well as the carrier recombination dynamics determining the… ▽ More GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is crucial to understand their interaction with light governing the absorption and extraction efficiency, as well as the carrier recombination dynamics determining the radiative efficiency. Here, we study the spontaneous emission of zincblende GaAs/(Al,Ga)As core/shell nanowire arrays by $μ$-photoluminescence spectroscopy. These ordered arrays are synthesized on patterned Si(111) substrates using molecular beam epitaxy, and exhibit an exceptionally low degree of polytypism for interwire separations exceeding a critical value. We record emission spectra over more than five orders of excitation density for both steady-state and pulsed excitation to identify the nature of the recombination channels. An abrupt Mott transition from excitonic to electron-hole-plasma recombination is observed, and the corresponding Mott density is derived. Combining these experiments with simulations and additional direct measurements of the external quantum efficiency using a perfect diffuse reflector as reference, we are able to extract the internal quantum efficiency as a function of carrier density and temperature as well as the extraction efficiency of the nanowire array. The results vividly document the high potential of GaAs/(Al,Ga)As core/shell nanowires for efficient light emitters integrated on the Si platform. Furthermore, the methodology established in this work can be applied to nanowires of any other materials system of interest for optoelectronic applications. △ Less

Submitted 30 November, 2022; originally announced November 2022.

Journal ref: ACS Appl. Nano Mater. 6, 15278-15293 (2023)

Density control of GaN nanowires at the wafer scale using self-assembled SiN$_x$ patches on sputtered TiN(111)

Authors: Thomas Auzelle, Miriam Oliva, Philipp John, Manfred Ramsteiner, Lutz Geelhaar, Oliver Brandt

Abstract: The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh ($>10$ $μ$m$^{-2}$) or ultralow ($<1$ $μ$m$^{-2}$) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we e… ▽ More The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh ($>10$ $μ$m$^{-2}$) or ultralow ($<1$ $μ$m$^{-2}$) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we examine the self-assembly of SiN$_x$ patches on TiN(111) substrates which are eventually acting as seeds for the growth of GaN nanowires. We first found that if prepared by reactive sputtering, the TiN surface is characterized by \{100\} facets for which the GaN incubation time is extremely long. Fast GaN nucleation is only obtained after deposition of a sub-monolayer of SiN$_x$ atoms prior to the GaN growth. By varying the amount of pre-deposited SiN$_x$, the GaN nanowire density could be tuned by three orders of magnitude with excellent uniformity over the entire wafer, bridging the density regimes conventionally attainable by direct self-assembly with MBE or MOVPE. The analysis of the nanowire morphology agrees with a nucleation of the GaN nanowires on nanometric SiN$_x$ patches. The photoluminescence analysis of single freestanding GaN nanowires reveals a band edge luminescence dominated by excitonic transitions that are broad and blue shifted compared to bulk GaN, an effect that is related to the small nanowire diameter and to the presence of a thick native oxide. The approach developed here can be principally used for tuning the density of most III-V semiconductors nucleus grown on inert surfaces like 2D materials. △ Less

Submitted 8 August, 2023; v1 submitted 11 November, 2022; originally announced November 2022.

Journal ref: Nanotechnology, 34, 375602 (2023)

SnO/$β$-Ga2O3 vertical $pn$ heterojunction diodes

Authors: Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen

Abstract: Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $β$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without… ▽ More Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $β$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without in-plane expitaxial relation to the substrate. After subsequent contact processing and mesa etching (which drastically reduced the reverse current spreading in the SnO layer and associated high leakage) electrical characterization by current-voltage and capacitance-voltage measurement was performed. The results reveal a type-I band alignment and junction transport by thermionic emission in forward bias. A rectification of $2\times10^{8}$ at $\pm1$V, an ideality factor of 1.16, differential specific on-resistance of 3.9m$Ω\thinspace$cm$^{2}$, and built-in voltage of 0.96V were determined. The $pn$-junction isolation prevented parallel conduction in the highly-conductive Ga$_{2}$O$_{3}$ substrate (sheet resistance $R_{S}\approx3\thinspaceΩ$) during van-der-Pauw Hall measurements of the SnO layer on top ($R_{S}\approx150$k$Ω$, $p\approx2.5\times10^{18}$cm$^{-3}$, Hall mobility $\approx1$cm$^{2}$/Vs). The measured maximum reverse breakdown voltage of the diodes was 66V, corresponding to a peak breakdown field 2.2MV/cm in the Ga$_{2}$O$_{3}$-depletion region. Higher breakdown voltages that are required in high-voltage devices could be achieved by reducing the donor concentration in the $β$-Ga$_{2}$O$_{3}$ to increase the depletion width as well as improving the contact geometry to reduce field crowding. △ Less

Submitted 1 October, 2020; originally announced October 2020.

Journal ref: Appl. Phys. Lett. 117, 252106 (2020)

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields

Authors: T. Auzelle, M. Azadmand, T. Flissikowski, M. Ramsteiner, K. Morgenroth, C. Stemmler, S. Fernández-Garrido, S. Sanguinetti, H. T. Grahn, L. Geelhaar, O. Brandt

Abstract: GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times a… ▽ More GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times approaching those measured for state-of-the-art bulk GaN. However, the decay time is not correlated with the growth temperature, but rather with the nanowire diameter. The inverse dependence of the decay time on diameter suggests that the nonradiative process in GaN nanowires is not controlled by the defect density, but by the field ionization of excitons in the radial electric field caused by surface band bending. We propose a unified mechanism accounting for nonradiative recombination in GaN nanowires of arbitrary diameter. △ Less

Submitted 4 February, 2021; v1 submitted 17 January, 2020; originally announced January 2020.

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Authors: Melanie Budde, Carsten Tschammer, Philipp Franz, Johannes Feldl, Manfred Ramsteiner, Rüdiger Goldhahn, Martin Feneberg, Nicolae Barsan, Alexandru Oprea, Oliver Bierwagen

Abstract: NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by X-ray diffraction measurements for all used growth conditions and substrates except MgO(111). A detailed growth series on MgO(100) was prepared using substrate te… ▽ More NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by X-ray diffraction measurements for all used growth conditions and substrates except MgO(111). A detailed growth series on MgO(100) was prepared using substrate temperatures ranging from 20 °C to 900 °C to investigate the influence on the layer characteristics. Energy-dispersive X-ray spectroscopy indicated close-to-stoichiometric layers with an oxygen content of ~47 at. % and ~50 at. % grown under low and high O-flux, respectively. All NiO layers had a root-mean-square surface roughness below 1 nm, measured by atomic force microscopy, except for rougher layers grown at 900 °C or using molecular oxygen. Growth at 900 °C led to a significant diffusion of Mg from the substrate into the film. The relative intensity of the quasi-forbidden one-phonon Raman peak is introduced as a gauge of the crystal quality, indicating the highest layer quality for growth at low oxygen flux and high growth temperature, likely due to the resulting high adatom diffusion length during growth. The optical and electrical properties were investigated by spectroscopic ellipsometry and resistance measurements, respectively. All NiO layers were transparent with an optical bandgap around 3.6 eV and semi-insulating at room temperature. However, changes upon exposure to reducing or oxidizing gases of the resistance of a representative layer at elevated temperature were able to confirm p-type conductivity, highlighting their suitability as a model system for research on oxide-based gas sensing. △ Less

Submitted 6 January, 2020; originally announced January 2020.

Journal ref: Journal of Applied Physics 123, 195301 (2018)

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Authors: Melanie Budde, Thilo Remmele, Carsten Tschammer, Johannes Feldl, Philipp Franz, Jonas Lähnemann, Zongzhe Cheng, Michael Hanke, Manfred Ramsteiner, Martin Albrecht, Oliver Bierwagen

Abstract: The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two rotational domains, with epitaxial relation $\normalsize{}\mathrm{\mathrm{\mathrm{NiO}(1\bar{\mathrm{1}}0)}\:||\:\mathrm{\mathrm{GaN}(11.0)}}$ and… ▽ More The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two rotational domains, with epitaxial relation $\normalsize{}\mathrm{\mathrm{\mathrm{NiO}(1\bar{\mathrm{1}}0)}\:||\:\mathrm{\mathrm{GaN}(11.0)}}$ and $\mathrm{\mathrm{\mathrm{NiO}\mathrm{(10\bar{\mathrm{1}})}\:||\:\mathrm{GaN(11.0)}}}$, was observed by X-ray diffraction (XRD) and confirmed by in-situ reflection high-energy electron diffraction as well as transmission electron microscopy (TEM) and electron backscatter diffraction. With respect to the high lattice mismatch of 8.1 % and a measured low residual tensile layer strain, growth by lattice matching epitaxy or domain matching epitaxy is discussed. The morphology measured by atomic force microscopy showed a grainy surface, probably arising from the growth by the columnar rotational domains visible in TEM micrographs. The domain sizes measured by AFM and TEM increase with the growth temperature, indicating an increasing surface diffusion length. Growth at 850 $^{\circ}$C, however, involved local decomposition of the GaN substrate that lead to an interfacial $\mathrmβ$-Ga$\mathrm{_{2}}$O$\mathrm{_{3}}$($\bar{\mathrm{2}}$01) layer and a high NiO surface roughness. Raman mesurements of the quasi-forbidden one-phonon peak indicate increasing layer quality (decreasing defect density) with increasing growth temperature. The results above suggest optimum growth temperatures around 700 $^{\circ}$C for high layer and interface quality. △ Less

Submitted 7 January, 2020; v1 submitted 17 October, 2019; originally announced October 2019.

Comments: 10 pages (+2 Supplement), 12 figures (+2 Supplement). The following article has been submitted to Journal of Applied Physics (October 2019)

Journal ref: Journal of Applied Physics 127, 015306 (2020)