Showing 1–4 of 4 results for author: Rampazzo, F

Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors

Authors: D. Favero, C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, B. Bakeroot, S. Decoutere, F. Rampazzo, G. Meneghesso, E. Zanoni, M. Meneghini

Abstract: For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk doping (6E18 Si/cc, 6E17 Si/c… ▽ More For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk doping (6E18 Si/cc, 6E17 Si/cc and 2.5E18 Mg/cc, p-type), different structures (planar, trench-like) and different geometries (area, perimeter and shape). We demonstrate that (i) capacitors on p-GaN have better breakdown performance; (ii) the presence of a trench structure significantly reduces breakdown capabilities; (iii) breakdown voltage is dependent on area, with a decreasing robustness for increasing dimensions; (iv) breakdown voltage is independent of shape (rectangular, circular). TCAD simulations, in agreement with the measurements, illustrate the electric field distribution near breakdown and clarify the results obtained experimentally. △ Less

Submitted 20 October, 2022; v1 submitted 19 October, 2022; originally announced October 2022.

Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap][UltimateGaN][826392]

Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons

Authors: Z. Gao, F. Rampazzo, M. Meneghini, C. De Santi, F. Chiocchetta, D. Marcon, G. Meneghesso, E. Zanoni

Abstract: The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the… ▽ More The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed. △ Less

Submitted 21 July, 2021; v1 submitted 18 July, 2021; originally announced July 2021.

Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]

Journal ref: Microelectronics Reliability, Volume 114, 2020, 113905

Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration

Authors: Z. Gao, M. Meneghini, F. Rampazzo, M. Rzin, C. De Santi, G. Meneghesso, E. Zanoni

Abstract: The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and pulsed I-V characterization at room temperature are discussed, then drain step stress tests at different gate voltages are compared, afterwards, the constant stress at different bias points are discussed. Results show tha… ▽ More The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and pulsed I-V characterization at room temperature are discussed, then drain step stress tests at different gate voltages are compared, afterwards, the constant stress at different bias points are discussed. Results show that the high C HEMTs showed reduced DIBL, smaller leakage current, as well as decreased electric field, leading to an improved robustness during on-state stress testing, with respect to the reference ones. Failure modes during constant voltage stress consists in a decrease of drain current and transconductance, accelerated by temperature and electric field. △ Less

Submitted 21 July, 2021; v1 submitted 18 July, 2021; originally announced July 2021.

Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]

Journal ref: Microelectronics Reliability, Volumes 100-101, 2019, 113489

Short Term Reliability and Robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

Authors: Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, Daniele Marcon, Etienne Okada, Fabiana Rampazzo, Carlo De Santi, Farid Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

Abstract: Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied… ▽ More Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may act as preferential paths for electron trapping. Degradation does not depend on dissipated power and is preliminary attributed to hot-electron trapping, enhanced by electric fields. △ Less

Submitted 30 July, 2021; v1 submitted 18 July, 2021; originally announced July 2021.

Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]

Journal ref: Microelectronics Reliability, Volume 123, 2021, 114199