-
Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering
Authors:
Ugur D. Menda,
Guilherme Ribeiro,
Jonas Deuermeier,
Esther López,
Daniela Nunes,
Santanu Jana,
Irene Artacho,
Rodrigo Martins,
Iván Mora-Seró,
Manuel J. Mendes,
Iñigo Ramiro
Abstract:
By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can achieve efficiencies 50% higher than conventional single-junction solar cells. For this, additional requirements are imposed to the light-absorbing semiconductor, which must contain a collection of in-gap levels, called intermediate band (IB), optically coupled to but thermally decoupled from the valence a…
▽ More
By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can achieve efficiencies 50% higher than conventional single-junction solar cells. For this, additional requirements are imposed to the light-absorbing semiconductor, which must contain a collection of in-gap levels, called intermediate band (IB), optically coupled to but thermally decoupled from the valence and conduction bands (VB and CB). Quantum-dot-in-perovskite (QDiP) solids, where inorganic quantum dots (QDs) are embedded in a halide perovskite matrix, have been recently suggested as a promising material platform for developing IBSCs. In this work, QDiP solids with excellent morphological and structural quality and strong absorption and emission related to the presence of in-gap QD levels are synthesized. With them, QDiP-based IBSCs are fabricated and, by means of temperature-dependent photocurrent measurements, it is shown that the IB is strongly thermally decoupled from the valence and conduction bands. The activation energy of the IB$\rightarrow$CB thermal escape of electrons is measured to be 204 meV, resulting in the mitigation of this detrimental process even under room-temperature operation, thus fulfilling the first mandatory requisite to enable high-efficiency IBSCs.
△ Less
Submitted 26 February, 2023;
originally announced February 2023.
-
Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell
Authors:
Antonio Martí,
Elisa Antolín,
Iñigo Ramiro
Abstract:
The hot carrier solar cell (HCSC) has the potential for converting solar energy into electrochemical energy with an efficiency of 85.4%. For this, in addition to an idealized light absorber, the HCSC has to be connected to the external load by means of the so-called \emph{mono-energetic energy selective contacts} (ESCs). However, the thermodynamic properties that these types of contact have to exh…
▽ More
The hot carrier solar cell (HCSC) has the potential for converting solar energy into electrochemical energy with an efficiency of 85.4%. For this, in addition to an idealized light absorber, the HCSC has to be connected to the external load by means of the so-called \emph{mono-energetic energy selective contacts} (ESCs). However, the thermodynamic properties that these types of contact have to exhibit, such as their electric, thermal conductivity and Seebeck coefficient, have not been explored. This paper aims to fill this gap. In this respect, we model electron transport in non-ideal ESCs using the transport theory proposed by Datta and Landauer which has allowed us to calculate the value of these parameters as a function of the temperature and electrochemical potential of operation. Our findings also reveal that, to preserve the HCSC efficiency above 82%, the ESCs could require in the order of $3 \times 10^{19}$ cm$^{-3}$ electron states. As the ESCs depart from ideality, the temperature of the hot carriers at which optimum efficiency is obtained increases to above 2540 K. The mono-enenergetic selective contact characterized by the highest energy demands an electric, thermal conductivity and Seebeck coefficient that, when combined, are characterized by a high thermoelectric figure of merit $(ZT\approx 8)$. We are not aware of any material exhibiting this figure of merit which illustrates the difficulty in putting the HCSC concept into practice. Conversely, our work supports the idea that pursuing materials capable of transporting electrons ballistically through mono-energetic electron channels can provide the key for achieving materials characterized by high $ZT$
△ Less
Submitted 18 December, 2022;
originally announced December 2022.
-
Single-Exciton Gain and Stimulated Emission across the Infrared Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots
Authors:
Sotirios Christodoulou,
Iñigo Ramiro,
Andreas Othonos,
Alberto Figueroba,
Mariona Dalmases,
Onur Özdemir,
Santanu Pradhan,
Grigorios Itskos,
Gerasimos Konstantatos
Abstract:
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique o…
▽ More
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique opportunity as an optical gain medium in view of their tunable bandgap, solution processability and CMOS compatibility. The 8-fold degeneracy of infrared CQDs based on Pb-chalcogenides has hindered the demonstration of low-threshold optical gain and lasing, at room temperature. We demonstrate room-temperature, infrared, size-tunable, band-edge stimulated emission with linewidth of ~14 meV. Leveraging robust electronic doping and charge-exciton interactions in PbS CQD thin films, we reach gain threshold at the single exciton regime representing a four-fold reduction from the theoretical limit of an eight-fold degenerate system, with a net modal gain in excess of 100 cm-1.
△ Less
Submitted 21 September, 2021;
originally announced September 2021.
-
Contribution to the study of sub-bandgap photon absorption in quantum dot InAs/AlGaAs intermediate band solar cells
Authors:
Juan Villa,
Iñigo Ramiro,
José María Ripalda,
Ignacio Tobías,
Pablo García-Linares,
Elisa Antolín,
Antonio Martí
Abstract:
Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving the output voltage. Experimental IBSCs based on quantum dots have already demonstrated that both below-bandgap photon absorption and the output voltage preservation, are possible. However, the experimental work has also revealed that the below-bandgap absorption of lig…
▽ More
Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving the output voltage. Experimental IBSCs based on quantum dots have already demonstrated that both below-bandgap photon absorption and the output voltage preservation, are possible. However, the experimental work has also revealed that the below-bandgap absorption of light is weak and insufficient to boost the efficiency of the solar cells. The objective of this work is to contribute to the study of this absorption by manufacturing and characterizing a quantum dot intermediate band solar cell with a single quantum dot layer with and without light trapping elements. Using one-dimensional substrate texturing, our results show a three-fold increase in the absorption of below bandgap energy photons in the lowest energy region of the spectrum, a region not previously explored using this approach. Furthermore, we also measure, at 9K, a distinguished split of quasi-Fermi levels between the conduction and intermediate bands, which is a necessary condition to preserve the output voltage of the cell.
△ Less
Submitted 13 January, 2021;
originally announced January 2021.
-
Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications
Authors:
Antonio Martí,
Pablo García-Linares,
Marius Zehender,
Simon A. Svatek,
Irene Artacho,
Ana Belén Cristóbal,
José R. González,
Carsten Baur,
Iñigo Ramiro,
Federica Cappelluti,
Elisa Antolín
Abstract:
Multi-terminal multi-junction solar cells (MJSC) offer higher efficiency potential than series connected (two-terminal) ones. In addition, for terrestrial applications, the efficiency of multi-terminal solar cells is less sensitive to solar spectral variations than the two-terminal series-connected one. In space, generally, cells are always illuminated with AM0 spectrum and no impact is expected f…
▽ More
Multi-terminal multi-junction solar cells (MJSC) offer higher efficiency potential than series connected (two-terminal) ones. In addition, for terrestrial applications, the efficiency of multi-terminal solar cells is less sensitive to solar spectral variations than the two-terminal series-connected one. In space, generally, cells are always illuminated with AM0 spectrum and no impact is expected from spectral variations. Still, in space, the multi-terminal approach offers some advantages in comparison with the series-connected architecture approach derived from a higher end of life (EOL) efficiency. In this work we review the potential of multi-terminal solar cells for achieving extended EOL efficiencies with emphasis in the potential of the three-terminal heterojunction bipolar transistor solar cell, a novel multi-terminal MJSC architecture with a simplified structure not requiring, for example, tunnel junctions.
△ Less
Submitted 14 May, 2020;
originally announced June 2020.
-
High Sensitivity Hybrid PbS CQD-TMDC Photodetectors up to 2 $μ$m
Authors:
Onur Özdemir,
Iñigo Ramiro,
Shuchi Gupta,
Gerasimos Konstantatos
Abstract:
Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal dichalcogenides (TMDCs) and PbS colloidal quantum dots (CQDs). However, to date, such photodetectors have been reported with high sensitivity up to 1.5 $μ$m. Here we ext…
▽ More
Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal dichalcogenides (TMDCs) and PbS colloidal quantum dots (CQDs). However, to date, such photodetectors have been reported with high sensitivity up to 1.5 $μ$m. Here we extend the spectral coverage of this technology towards 2 $μ$m demonstrating for the first time compelling performance with responsivities 1400 A/W at 1.8 $μ$m with 1V bias and detectivities as high as $10^{12}$ Jones at room temperature. To do this we studied two TMDC materials as a carrier transport layer, tungsten disulfide (WS$_2$) and molybdenum disulfide (MoS$_2$) and demonstrate that WS$_2$ based hybrid photodetectors outperform those of MoS$_2$ due to a more adequate band alignment that favors carrier transfer from the CQDs.
△ Less
Submitted 25 March, 2020;
originally announced March 2020.
-
Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots
Authors:
Yu Bi,
Arnau Bertran,
Shuchi Gupta,
Iñigo Ramiro,
Santanu Pradhan,
Sotirios Christodoulou,
Shanmukh-Naidu Majji,
Mehmet Zafer Akgul,
Gerasimos Konstantatos
Abstract:
Harnessing low energy photons is of paramount importance for multi-junction high efficiency solar cells as well as for thermo-photovoltaic applications. However, semiconductor absorbers with bandgap lower than 0.8 eV have been limited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized by high manufacturing costs and complicated lattice matching requirements in their growth and inte…
▽ More
Harnessing low energy photons is of paramount importance for multi-junction high efficiency solar cells as well as for thermo-photovoltaic applications. However, semiconductor absorbers with bandgap lower than 0.8 eV have been limited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized by high manufacturing costs and complicated lattice matching requirements in their growth and integration with the higher bandgap cells. Here, we have developed solution processed low bandgap photovoltaic devices based on PbS colloidal quantum dots (CQDs) with a bandgap of 0.7 eV suited for both thermo-photovoltaic as well as low energy solar photon harvesting. By matching the spectral response of those cells to that of the infrared solar spectrum, we report a record high short circuit current (JSC) of 37 mA/cm2 under full solar spectrum and 5.5 mA/cm2 when placed at the back of a silicon wafer resulting in power conversion efficiencies (PCE) of 6.4 % and 0.7 % respectively. Moreover, the device reached an above bandgap PCE of ~6 % as a thermo-photovoltaic cell recorded under a 1000 °C blackbody radiator.
△ Less
Submitted 23 September, 2019;
originally announced September 2019.
-
Single-Exciton Gain and Stimulated Emission Across the Infrared Optical Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots
Authors:
Sotirios Christodoulou,
Iñigo Ramiro,
Andreas Othonos,
Alberto Figueroba,
Mariona Dalmases,
Onur Özdemir,
Santanu Pradhan,
Grigorios Itskos,
Gerasimos Konstantatos
Abstract:
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a uni…
▽ More
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique opportunity as an optical gain medium4 in view of their tunable bandgap, solution processability and CMOS compatibility. Their potential for narrower linewidths5 and the lower-than-bulk degeneracy6 has led to dramatic progress towards successful demonstration of optical gain4, stimulated emission7 and lasing8,9,10 in the visible part of spectrum utilizing CdSe-based CQDs. Infrared Pb-chalcogenide colloidal quantum dots however exhibit higher state degeneracy and as a result the demonstration of optical gain has imposed very high thresholds.11,12 Here we demonstrate room-temperature, infrared stimulated emission, tunable across the optical communication band, based on robust electronically doped PbS CQDs, that reach gain threshold at the single exciton regime, representing a four-fold reduction from the theoretical limit of an eight-fold degenerate system and two orders of magnitude lower than prior reports.
△ Less
Submitted 10 August, 2019;
originally announced August 2019.
-
High-Efficiency Light-Emitting Diodes based on Formamidinium lead bromide nanocrystals and solution processed transport layers
Authors:
Francesco Di Stasio,
Inigo Ramiro,
Yu Bi,
Sotirios Christodoulou,
Alexandros Stavrinadis,
Gerasimos Konstantatos
Abstract:
Perovskite nanocrystal light-emitting diodes (LEDs) employing architecture comprising a ZnO nanoparticles electron-transport layer and a conjugated polymer hole-transport layer have been fabricated. The obtained LEDs demonstrate a maximum external-quantum-efficiency of 6.04%, luminance of 12998 Cd/m2 and stable electroluminescence at 519 nm. Importantly, such high efficiency and brightness have be…
▽ More
Perovskite nanocrystal light-emitting diodes (LEDs) employing architecture comprising a ZnO nanoparticles electron-transport layer and a conjugated polymer hole-transport layer have been fabricated. The obtained LEDs demonstrate a maximum external-quantum-efficiency of 6.04%, luminance of 12998 Cd/m2 and stable electroluminescence at 519 nm. Importantly, such high efficiency and brightness have been achieved by employing solution processed transport layers, formamidinium lead bromide nanocrystals (CH(NH2)2PbBr3 NCs) synthesized at room-temperature and in air without the use of a Schlenk line, and a procedure based on atomic layer deposition to insolubilize the NC film. The obtained NCs show a photoluminescence quantum yield of 90% that is retained upon film fabrica-tion. The results show that perovskite NC LEDs can achieve high-performance without the use of transport layers deposited through evapo-ration in ultra-high-vacuum.
△ Less
Submitted 29 January, 2019;
originally announced January 2019.
