Showing 1–7 of 7 results for author: Ramakrishna, M V

Growth Pattern of Silicon Clusters

Authors: Atul Bahel, Jun Pan, Mushti V. Ramakrishna

Abstract: Tight-binding molecular dynamics simulated annealing technique is employed to search for the ground state geometries of silicon clusters containing 11-17 atoms. These studies revealed that layer formation is the dominant growth pattern in all these clusters. Fullerene-like precursor structures consisting of fused pentagon rings are also observed. The atoms in all these clusters exhibit pronounce… ▽ More Tight-binding molecular dynamics simulated annealing technique is employed to search for the ground state geometries of silicon clusters containing 11-17 atoms. These studies revealed that layer formation is the dominant growth pattern in all these clusters. Fullerene-like precursor structures consisting of fused pentagon rings are also observed. The atoms in all these clusters exhibit pronounced preference for residing on the surface. △ Less

Submitted 3 June, 1995; originally announced June 1995.

Comments: Modern Physics Letters B in press, 9 pages + 2 figures. PostScript version available at ftp://ramanujan.chem.nyu.edu/pub/mplb1.ps

Chemistry of Nanoscale Semiconductor Clusters

Authors: Jun Pan, Atul Bahel, Mushti V. Ramakrishna

Abstract: The ground state structures of small silicon clusters are determined through exhaustive tight-binding molecular dynamics simulation studies. These simulations revealed that \Si{11} is an icosahedron with one missing cap, \Si{12} is a complete icosahedron, \Si{13} is a surface capped icosahedron, \Si{14} is a 4-4-4 layer structure with two caps, \Si{15} is a 1-5-3-5-1 layer structure, and \Si{16}… ▽ More The ground state structures of small silicon clusters are determined through exhaustive tight-binding molecular dynamics simulation studies. These simulations revealed that \Si{11} is an icosahedron with one missing cap, \Si{12} is a complete icosahedron, \Si{13} is a surface capped icosahedron, \Si{14} is a 4-4-4 layer structure with two caps, \Si{15} is a 1-5-3-5-1 layer structure, and \Si{16} is a partially closed cage consisting of five-membered rings. The characteristic feature of these clusters is that they are all surface. Smalley and co-workers discovered that chemisorption reactivities of silicon clusters vary over three orders of magnitude as a function of cluster size. In particular, they found that \Si{33}, \Si{39}, and \Si{45} clusters are least reactive towards various reagents compared to their immediate neighbors in size. We provide insights into this observed reactivity pattern through our stuffed fullerene model. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry gives rise to four-fold coordinated crown atoms and $π$-bonded dimer pairs. This model yields unique structures for \Si{33}, \Si{39}, and \Si{45} clusters without any dangling bonds and thus explains their lowest reactivity towards chemisorption of closed shell reagents. We also explain why a) these clusters are substantially unreactive compared to bulk surfaces and b) dissociative chemisorption occurs on bulk surfaces while molecular chemisorption occurs on cluster surfaces. Finally, experiments on Si$_x$X$_y$ (X = B, Al, Ga, P, As, AlP, GaAs) are suggested as a means of verifying the proposed model. △ Less

Submitted 3 June, 1995; originally announced June 1995.

Comments: Physics, Chemistry, and Applications of Nanostructures (in press), 7 pages + 2 figures. PostScript version available at ftp://ramanujan.chem.nyu.edu/pub/nano1.ps

Quantum Confinement Effects in Semiconductor Clusters II

Authors: Antonietta Tomasulo, Mushti V. Ramakrishna

Abstract: The band gaps and spectral shifts of CdS, CdSe, CdTe, AlP, GaP, GaAs, and InP semiconductor clusters are calculated from band structure calculations using accurate local and non-local empirical pseudopotentials. The effect of spin-orbit coupling on the band structures is included in the calculations when they are important. The complete set of pseudopotential parameters and full computational de… ▽ More The band gaps and spectral shifts of CdS, CdSe, CdTe, AlP, GaP, GaAs, and InP semiconductor clusters are calculated from band structure calculations using accurate local and non-local empirical pseudopotentials. The effect of spin-orbit coupling on the band structures is included in the calculations when they are important. The complete set of pseudopotential parameters and full computational details are reported for all these semiconductors. The calculated spectral shifts of zinc-blende and wurtzite CdS, wurtzite CdSe, and zinc-blende InP clusters are in good agreement with experiments over a range of cluster sizes. The effect of crystal structure on the band gaps is small in large clusters but becomes important in small clusters. In the absence of experimental data, our calculations provide reasonable estimates of expected spectral shifts for the other clusters. These results demonstrate that the empirical pseudopotential method yields unique insights into the quantum confinement effects and is a powerful tool for calculating the spectral shifts of semiconductor clusters. △ Less

Submitted 3 June, 1995; originally announced June 1995.

Comments: J. Chem. Phys. submitted (1995); 48 pages + 9 figures. PostScript version available via anonymous ftp at ftp://ramanujan.chem.nyu.edu/pub/qc3.ps

Structure of Silicon Clusters

Authors: Jun Pan, Atul Bahel, Mushti V. Ramakrishna

Abstract: We determined the structures of silicon clusters in the 11-14 atom size range using the tight-binding molecular dynamics method. These calculations reveal that \Si{11} is an icosahedron with one missing cap, \Si{12} is a complete icosahedron, \Si{13} is a surface capped icosahedron, and \Si{14} is a 4-4-4 layer structure with two caps. The characteristic feature of these clusters is that they are… ▽ More We determined the structures of silicon clusters in the 11-14 atom size range using the tight-binding molecular dynamics method. These calculations reveal that \Si{11} is an icosahedron with one missing cap, \Si{12} is a complete icosahedron, \Si{13} is a surface capped icosahedron, and \Si{14} is a 4-4-4 layer structure with two caps. The characteristic feature of these clusters is that they are all surface. △ Less

Submitted 7 February, 1995; originally announced February 1995.

Comments: Surface Review and Letters (in press), 7 pages + 4 figures. ftp://ramanujan.chem.nyu.edu/pub/ab2.ps

Structure of Si12 Cluster

Authors: Atul Bahel, Mushti V. Ramakrishna

Abstract: Tight-binding molecular dynamic simulations have revealed that Si$_{12}$ is an icosahedron with all atoms on the surface of an approximately 5 Å~ diameter sphere. This is the most spherical cage structure for silicon clusters in the 2-13 atom size range. Tight-binding molecular dynamic simulations have revealed that Si$_{12}$ is an icosahedron with all atoms on the surface of an approximately 5 Å~ diameter sphere. This is the most spherical cage structure for silicon clusters in the 2-13 atom size range. △ Less

Submitted 7 February, 1995; originally announced February 1995.

Comments: Phys. Rev. B in press (1995); 6 pages + 1 figure; PostScript file is available by anonymous ftp at ftp://ramanujan.chem.nyu.edu/pub/atul4.ps

Chemical Reactions of Silicon Clusters

Authors: Mushti V. Ramakrishna, Jun Pan

Abstract: Smalley and co-workers discovered that chemisorption reactivities of silicon clusters vary over three orders of magnitude as a function of cluster size. In particular, they found that \Si{33}, \Si{39}, and \Si{45} clusters are least reactive towards various reagents compared to their immediate neighbors in size. We explain these observations based on our stuffed fullerene model. This structural… ▽ More Smalley and co-workers discovered that chemisorption reactivities of silicon clusters vary over three orders of magnitude as a function of cluster size. In particular, they found that \Si{33}, \Si{39}, and \Si{45} clusters are least reactive towards various reagents compared to their immediate neighbors in size. We explain these observations based on our stuffed fullerene model. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry gives rise to four-fold coordinated crown atoms and $π$-bonded dimer pairs. This model yields unique structures for \Si{33}, \Si{39}, and \Si{45} clusters without any dangling bonds and thus explains their lowest reactivity towards chemisorption of closed shell reagents. This model is also consistent with the experimental finding of Jarrold and Constant that silicon clusters undergo a transition from prolate to spherical shapes at \Si{27}. We justify our model based on an in depth analysis of the differences between carbon and silicon chemistry and bonding characteristics. Using our model, we further explain why dissociative chemisorption occurs on bulk surfaces while molecular chemisorption occurs on cluster surfaces. We also explain reagent specific chemisorption reactivities observed experimentally based on the electronic structures of the reagents. Finally, experiments on \Si{x}X$_y$ (X = B, Al, Ga, P, As, AlP, GaAs) are suggested as a means of verifying the proposed model. We predict that \Si{x}(AlP)$_y$ and \Si{x}(GaAs)$_y$ $(x = 25, 31, 37; y = 4)$ clusters will be highly inert and it may be possible to prepare macroscopic samples of these alloy clusters through high temperature reactions. △ Less

Submitted 16 May, 1994; originally announced May 1994.

Comments: 20 pages + 6 figures, Complete PostScript file is available through anonymous ftp from ramanujan.chem.nyu.edu. The file name is jcp2.ps in directory pub

Magic Numbers of Silicon Clusters

Authors: Jun Pan, Mushti V. Ramakrishna

Abstract: A structural model for intermediate sized silicon clusters is proposed that is able to generate unique structures without any dangling bonds. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry results in the formation of crown atoms surrounded by $π$-bonded dimer pairs. This model yields unique struc… ▽ More A structural model for intermediate sized silicon clusters is proposed that is able to generate unique structures without any dangling bonds. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry results in the formation of crown atoms surrounded by $π$-bonded dimer pairs. This model yields unique structures for \Si{33}, \Si{39}, and \Si{45} clusters without any dangling bonds and hence explains why these clusters are least reactive towards chemisorption of ammonia, methanol, ethylene, and water. This model is also consistent with the experimental finding that silicon clusters undergo a transition from prolate to spherical shapes at \Si{27}. Finally, reagent specific chemisorption reactivities observed experimentally is explained based on the electronic structures of the reagents. △ Less

Submitted 15 March, 1994; originally announced March 1994.

Comments: 4 pages + 3 figures (postscript files after \end{document})