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Study of Mach reflection in inviscid flows
Authors:
S R Siva Prasad Kochi,
M Ramakrishna
Abstract:
In this paper, we study the Mach reflection phenomenon in inviscid flows using a higher order discontinuous Galerkin method and overset grids. We use the shock capturing procedure proposed in Siva Prasad Kochi et al. using overset grids to capture the discontinuities occurring in the supersonic flow over a wedge accurately. In this procedure, we obtain a coarse grid solution first and using the tr…
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In this paper, we study the Mach reflection phenomenon in inviscid flows using a higher order discontinuous Galerkin method and overset grids. We use the shock capturing procedure proposed in Siva Prasad Kochi et al. using overset grids to capture the discontinuities occurring in the supersonic flow over a wedge accurately. In this procedure, we obtain a coarse grid solution first and using the troubled cell data, we construct an overset grid which is approximately aligned to all the discontinuities. We rerun the solver with the coarse grid solution as the initial condition while using the troubled cell indicator and the limiter only on the overset grid. This allows us to capture the discontinuities accurately. Using this procedure, we have obtained the solution for Mach $3.0$ and $4.0$ flow over a wedge for various wedge angles and determined the detachment criterion and the Von Neumann condition accurately. We have also determined the Mach stem height for various wedge angles for these Mach numbers. We have also demonstrated the hysteresis that occurs in the transition from regular reflection to Mach reflection.
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Submitted 24 January, 2023; v1 submitted 10 January, 2023;
originally announced January 2023.
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Addressing the issue of mass conservation error and the connected problem of Carbuncle formation
Authors:
Vinnakota Mythreya,
K. S. R. Siva Prasad.,
M. Ramakrishna
Abstract:
We study mass conservation errors (momentum density spike) and the related phenomenon of post shock oscillations in numerical solutions of compressible Euler equations. These phenomena and their causes have been reported in literature [34, 1]. In this paper, first, we compare the mass conservation and post shock oscillation errors obtained using combinations of different numerical methods (Finite…
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We study mass conservation errors (momentum density spike) and the related phenomenon of post shock oscillations in numerical solutions of compressible Euler equations. These phenomena and their causes have been reported in literature [34, 1]. In this paper, first, we compare the mass conservation and post shock oscillation errors obtained using combinations of different numerical methods (Finite Volume, Finite Difference with WENO and DG with simple WENO limiter) and upwind flux functions (ROE, AUSM+-up, and others) for moving shocks, modelled using one-dimensional Euler equations. Next, the mass conservation error is quantified for stationary shocks modelled using one-dimensional, quasi-one-dimensional and two-dimensional Euler equations. It is shown that using a fine mesh or refining mesh near shocks using multiple over set meshes lead to mitigation of the mass conservation error. This is demonstrated using the problem of flow through a variable area duct modelled using quasi-one-dimensional Euler equations. The link between mass conservation error and carbuncle formation is shown and preliminary results indicating that the carbuncle can be cured using multiple overset meshes are also shown.
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Submitted 13 May, 2020;
originally announced May 2020.
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Modified symmetry technique for mitigation of flow leak near corners for compressible inviscid fluid flow
Authors:
Vinnakota Mythreya,
M. Ramakrishna
Abstract:
Using the standard symmetry technique for applying boundary conditions for free slip and flat walls with corners will lead to flow leak through the wall near corners (violation of no penetration condition) and a corresponding error in prediction of pressure. Also, prescribing a state at the corner as a boundary condition is not possible. In this paper, a method for tackling the `corner point state…
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Using the standard symmetry technique for applying boundary conditions for free slip and flat walls with corners will lead to flow leak through the wall near corners (violation of no penetration condition) and a corresponding error in prediction of pressure. Also, prescribing a state at the corner as a boundary condition is not possible. In this paper, a method for tackling the `corner point state' problem is given and modifications to the standard symmetry technique are proposed to mitigate flow leak near the corner. Using this modified symmetry technique, numerical solutions to the Euler equations for flows over forward facing and backward facing step are computed employing the Shu-Osher conservative finite difference scheme with WENO-NP3 reconstruction (with a formal order of accuracy in space of 3), Lax-Freidrichs flux splitting, and TVD-RK3 time discretisation. It is shown that using this modified symmetry technique leads to mitigation of flow leak near the corner and a better prediction of shock structure even on coarse meshes.
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Submitted 8 June, 2019;
originally announced June 2019.
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Multi-scale turbulence modeling and maximum information principle. Part 2
Authors:
L. Tao,
M. Ramakrishna
Abstract:
We consider two-dimensional homogeneous shear turbulence within the context of optimal control, a multi-scale turbulence model containing the fluctuation velocity and pressure correlations up to the fourth order; The model is formulated on the basis of the Navier-Stokes equations, Reynolds average, the constraints of inequality from both physical and mathematical considerations, the turbulent ener…
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We consider two-dimensional homogeneous shear turbulence within the context of optimal control, a multi-scale turbulence model containing the fluctuation velocity and pressure correlations up to the fourth order; The model is formulated on the basis of the Navier-Stokes equations, Reynolds average, the constraints of inequality from both physical and mathematical considerations, the turbulent energy density as the objective to be maximized, and the fourth order correlations as the control variables. Without imposing the maximization and the constraints, the resultant equations of motion in the Fourier wave number space are formally solved to obtain the transient state solutions, the asymptotic state solutions and the evolution of a transient toward an asymptotic under certain conditions. The asymptotic state solutions are characterized by the dimensionless exponential time rate of growth $2σ$ which has an upper bound of $2σ_{\max}$ = 0; The asymptotic solutions can be obtained from a linear objective convex programming. For the asymptotic state solutions of the reduced model containing the correlations up to the third order, the optimal control problem reduces to linear programming with the primary component of the third order correlations or a related integral quantity as the control variable; the supports of the second and third order correlations are estimated for the sake of numerical simulation; the existence of feasible solutions is demonstrated when the related quantity is the control variable. The relevance of the formulation to flow stability analysis is suggested.
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Submitted 7 January, 2014; v1 submitted 18 July, 2013;
originally announced July 2013.
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Multi-scale turbulence modeling and maximum information principle. Part 1
Authors:
L. Tao,
M. Ramakrishna
Abstract:
We discuss averaged turbulence modeling of multi-scales of length for an incompressible Newtonian fluid, with the help of the maximum information principle. We suppose that there exists a function basis to decompose the turbulent fluctuations in a flow of our concern into the components associated with various spatial scales and that there is a probability density function $\pdf$ of these fluctuat…
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We discuss averaged turbulence modeling of multi-scales of length for an incompressible Newtonian fluid, with the help of the maximum information principle. We suppose that there exists a function basis to decompose the turbulent fluctuations in a flow of our concern into the components associated with various spatial scales and that there is a probability density function $\pdf$ of these fluctuation components. The unbiased form for $\pdf$ is determined and the turbulence model is closed, with the multi-scale correlations up to the fourth order, through maximizing the information under the constraints of equality and inequality for that flow. Due to the computational difficulty to maximize the information, a closely related but simple alternative objective is sought, like the determinant or the trace of the second order correlations of the turbulent flow. Some preliminary results and implications from the application to homogeneous turbulence are presented. Some issues yet to be resolved are indicated.
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Submitted 9 September, 2010;
originally announced September 2010.
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Growth Pattern of Silicon Clusters
Authors:
Atul Bahel,
Jun Pan,
Mushti V. Ramakrishna
Abstract:
Tight-binding molecular dynamics simulated annealing technique is employed to search for the ground state geometries of silicon clusters containing 11-17 atoms. These studies revealed that layer formation is the dominant growth pattern in all these clusters. Fullerene-like precursor structures consisting of fused pentagon rings are also observed. The atoms in all these clusters exhibit pronounce…
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Tight-binding molecular dynamics simulated annealing technique is employed to search for the ground state geometries of silicon clusters containing 11-17 atoms. These studies revealed that layer formation is the dominant growth pattern in all these clusters. Fullerene-like precursor structures consisting of fused pentagon rings are also observed. The atoms in all these clusters exhibit pronounced preference for residing on the surface.
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Submitted 3 June, 1995;
originally announced June 1995.
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Chemistry of Nanoscale Semiconductor Clusters
Authors:
Jun Pan,
Atul Bahel,
Mushti V. Ramakrishna
Abstract:
The ground state structures of small silicon clusters are determined through exhaustive tight-binding molecular dynamics simulation studies. These simulations revealed that \Si{11} is an icosahedron with one missing cap, \Si{12} is a complete icosahedron, \Si{13} is a surface capped icosahedron, \Si{14} is a 4-4-4 layer structure with two caps, \Si{15} is a 1-5-3-5-1 layer structure, and \Si{16}…
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The ground state structures of small silicon clusters are determined through exhaustive tight-binding molecular dynamics simulation studies. These simulations revealed that \Si{11} is an icosahedron with one missing cap, \Si{12} is a complete icosahedron, \Si{13} is a surface capped icosahedron, \Si{14} is a 4-4-4 layer structure with two caps, \Si{15} is a 1-5-3-5-1 layer structure, and \Si{16} is a partially closed cage consisting of five-membered rings. The characteristic feature of these clusters is that they are all surface.
Smalley and co-workers discovered that chemisorption reactivities of silicon clusters vary over three orders of magnitude as a function of cluster size. In particular, they found that \Si{33}, \Si{39}, and \Si{45} clusters are least reactive towards various reagents compared to their immediate neighbors in size. We provide insights into this observed reactivity pattern through our stuffed fullerene model. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry gives rise to four-fold coordinated crown atoms and $π$-bonded dimer pairs. This model yields unique structures for \Si{33}, \Si{39}, and \Si{45} clusters without any dangling bonds and thus explains their lowest reactivity towards chemisorption of closed shell reagents. We also explain why a) these clusters are substantially unreactive compared to bulk surfaces and b) dissociative chemisorption occurs on bulk surfaces while molecular chemisorption occurs on cluster surfaces. Finally, experiments on Si$_x$X$_y$ (X = B, Al, Ga, P, As, AlP, GaAs) are suggested as a means of verifying the proposed model.
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Submitted 3 June, 1995;
originally announced June 1995.
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Quantum Confinement Effects in Semiconductor Clusters II
Authors:
Antonietta Tomasulo,
Mushti V. Ramakrishna
Abstract:
The band gaps and spectral shifts of CdS, CdSe, CdTe, AlP, GaP, GaAs, and InP semiconductor clusters are calculated from band structure calculations using accurate local and non-local empirical pseudopotentials. The effect of spin-orbit coupling on the band structures is included in the calculations when they are important. The complete set of pseudopotential parameters and full computational de…
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The band gaps and spectral shifts of CdS, CdSe, CdTe, AlP, GaP, GaAs, and InP semiconductor clusters are calculated from band structure calculations using accurate local and non-local empirical pseudopotentials. The effect of spin-orbit coupling on the band structures is included in the calculations when they are important. The complete set of pseudopotential parameters and full computational details are reported for all these semiconductors. The calculated spectral shifts of zinc-blende and wurtzite CdS, wurtzite CdSe, and zinc-blende InP clusters are in good agreement with experiments over a range of cluster sizes. The effect of crystal structure on the band gaps is small in large clusters but becomes important in small clusters. In the absence of experimental data, our calculations provide reasonable estimates of expected spectral shifts for the other clusters. These results demonstrate that the empirical pseudopotential method yields unique insights into the quantum confinement effects and is a powerful tool for calculating the spectral shifts of semiconductor clusters.
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Submitted 3 June, 1995;
originally announced June 1995.
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Structure of Silicon Clusters
Authors:
Jun Pan,
Atul Bahel,
Mushti V. Ramakrishna
Abstract:
We determined the structures of silicon clusters in the 11-14 atom size range using the tight-binding molecular dynamics method. These calculations reveal that \Si{11} is an icosahedron with one missing cap, \Si{12} is a complete icosahedron, \Si{13} is a surface capped icosahedron, and \Si{14} is a 4-4-4 layer structure with two caps. The characteristic feature of these clusters is that they are…
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We determined the structures of silicon clusters in the 11-14 atom size range using the tight-binding molecular dynamics method. These calculations reveal that \Si{11} is an icosahedron with one missing cap, \Si{12} is a complete icosahedron, \Si{13} is a surface capped icosahedron, and \Si{14} is a 4-4-4 layer structure with two caps. The characteristic feature of these clusters is that they are all surface.
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Submitted 7 February, 1995;
originally announced February 1995.
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Structure of Si12 Cluster
Authors:
Atul Bahel,
Mushti V. Ramakrishna
Abstract:
Tight-binding molecular dynamic simulations have revealed that Si$_{12}$ is an icosahedron with all atoms on the surface of an approximately 5 Å~ diameter sphere. This is the most spherical cage structure for silicon clusters in the 2-13 atom size range.
Tight-binding molecular dynamic simulations have revealed that Si$_{12}$ is an icosahedron with all atoms on the surface of an approximately 5 Å~ diameter sphere. This is the most spherical cage structure for silicon clusters in the 2-13 atom size range.
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Submitted 7 February, 1995;
originally announced February 1995.
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Chemical Reactions of Silicon Clusters
Authors:
Mushti V. Ramakrishna,
Jun Pan
Abstract:
Smalley and co-workers discovered that chemisorption reactivities of silicon clusters vary over three orders of magnitude as a function of cluster size. In particular, they found that \Si{33}, \Si{39}, and \Si{45} clusters are least reactive towards various reagents compared to their immediate neighbors in size. We explain these observations based on our stuffed fullerene model. This structural…
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Smalley and co-workers discovered that chemisorption reactivities of silicon clusters vary over three orders of magnitude as a function of cluster size. In particular, they found that \Si{33}, \Si{39}, and \Si{45} clusters are least reactive towards various reagents compared to their immediate neighbors in size. We explain these observations based on our stuffed fullerene model. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry gives rise to four-fold coordinated crown atoms and $π$-bonded dimer pairs. This model yields unique structures for \Si{33}, \Si{39}, and \Si{45} clusters without any dangling bonds and thus explains their lowest reactivity towards chemisorption of closed shell reagents. This model is also consistent with the experimental finding of Jarrold and Constant that silicon clusters undergo a transition from prolate to spherical shapes at \Si{27}. We justify our model based on an in depth analysis of the differences between carbon and silicon chemistry and bonding characteristics. Using our model, we further explain why dissociative chemisorption occurs on bulk surfaces while molecular chemisorption occurs on cluster surfaces. We also explain reagent specific chemisorption reactivities observed experimentally based on the electronic structures of the reagents. Finally, experiments on \Si{x}X$_y$ (X = B, Al, Ga, P, As, AlP, GaAs) are suggested as a means of verifying the proposed model. We predict that \Si{x}(AlP)$_y$ and \Si{x}(GaAs)$_y$ $(x = 25, 31, 37; y = 4)$ clusters will be highly inert and it may be possible to prepare macroscopic samples of these alloy clusters through high temperature reactions.
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Submitted 16 May, 1994;
originally announced May 1994.
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Magic Numbers of Silicon Clusters
Authors:
Jun Pan,
Mushti V. Ramakrishna
Abstract:
A structural model for intermediate sized silicon clusters is proposed that is able to generate unique structures without any dangling bonds. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry results in the formation of crown atoms surrounded by $π$-bonded dimer pairs. This model yields unique struc…
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A structural model for intermediate sized silicon clusters is proposed that is able to generate unique structures without any dangling bonds. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry results in the formation of crown atoms surrounded by $π$-bonded dimer pairs. This model yields unique structures for \Si{33}, \Si{39}, and \Si{45} clusters without any dangling bonds and hence explains why these clusters are least reactive towards chemisorption of ammonia, methanol, ethylene, and water. This model is also consistent with the experimental finding that silicon clusters undergo a transition from prolate to spherical shapes at \Si{27}. Finally, reagent specific chemisorption reactivities observed experimentally is explained based on the electronic structures of the reagents.
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Submitted 15 March, 1994;
originally announced March 1994.
