Characterisation of SiC radiation detector technologies with synchrotron X-rays
Authors:
Ivan Lopez Paz,
Celeste Fleta,
Joan Marc Rafí,
Gemma Rius,
Philippe Godignon,
Giulio Pellegrini,
Silvia Mena,
Marcio Jimenez,
Angela Henao,
Javier Bravo,
Roeland Boer,
Bernat Molas,
Consuelo Guardiola
Abstract:
To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation.
4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean Room, for which different strategies to define the electrical contact of the implants had been implemented, in an attempt to optimise the technology for, e.g.,…
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To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation.
4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean Room, for which different strategies to define the electrical contact of the implants had been implemented, in an attempt to optimise the technology for, e.g., medical applications or low energy radiation detection, as the material choice can affect the sensitivity of the device. Among these technologies, it is included an epitaxially-grown graphene layer as part of the electrical contact.
In this paper, a selection of four configurations of the IMB-CNM SiC diodes are characterised in terms of radiation detector response. Photodiode performance under 20 keV X-rays irradiation in the XALOC beam line at ALBA Synchrotron is presented. Over-responses in the range of 12-19% linked to the interaction of the radiation with the metallic layers are observed. A good uniformity response as well as a good linearity at 0~V bias is reported, even in the under-depleted devices. This work exemplifies the good performance of SiC detectors fabricated at IMB-CNM specifically for low-energy X ray characterization at high X-ray intensities.
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Submitted 19 November, 2024;
originally announced November 2024.
Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation
Authors:
Philipp Gaggl,
Andreas Gsponer,
Richard Thalmeier,
Simon Waid,
Giulio Pellegrini,
Philippe Godignon,
Joan Marc Rafí,
Thomas Bergauer
Abstract:
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up effects. Additionally, as radiation hardness requirem…
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The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up effects. Additionally, as radiation hardness requirements grow more demanding, wide-bandgap materials such as 4H-SiC could offer better performance. In this work, the detector performance of 50 micron thick 4H-SiC p-in-n planar pad sensors was investigated at room temperature, using an 241Am alpha source at reverse biases of up to 1100 V. Samples subjected to neutron irradiation with fluences of up to 1e16/cm^2 were included in the study in order to quantify the radiation hardness properties of 4H-SiC. The obtained results are compared to previously performed UV-TCT studies. Samples exhibit a drop in charge collection efficiency (CCE) with increasing irradiation fluence, partially compensated at high reverse bias voltages far above full depletion voltage. A plateau of the collected charges is observed in accordance with the depletion of the volume the alpha particles penetrate for an unirradiated reference detector. For the neutron-irradiated samples, such a plateau only becomes apparent at higher reverse bias. For the highest investigated fluence, CCE behaves almost linearly with increasing reverse bias. Compared to UV-TCT measurements, the reverse bias required to deplete a sensitive volume covering full energy deposition is lower, due to the small penetration depth of the alpha particles. At the highest reverse bias, the measured CCE values agree well with earlier UV-TCT studies, with discrepancies between 1% and 5%.
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Submitted 9 December, 2022; v1 submitted 16 October, 2022;
originally announced October 2022.
