Showing 1–2 of 2 results for author: Quinteros, C P

Ferroelastic domain walls in BiFeO$_3$ as memristive networks

Authors: Jan Rieck, Davide Cipollini, Mart Salverda, Cynthia P. Quinteros, Lambert R. B. Schomaker, Beatriz Noheda

Abstract: Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from w… ▽ More Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from wall to wall through the dense network of as-grown DWs in BFO thin films. Electric field cycling at different points of the network, performed locally by conducting atomic force microscope (cAFM), induces resistive switching selectively at the DWs, both for vertical (single wall) and lateral (wall-to-wall) conduction. These findings are the first step towards investigating DWs as memristive networks for information processing and in-materio computing. △ Less

Submitted 6 July, 2022; originally announced July 2022.

Spatio-temporal evolution of resistance state in simulated memristive networks

Authors: Fabrizio Di Francesco, Gabriel A. Sanca, Cynthia P. Quinteros

Abstract: Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high number of elements is thus mandatory. To surpass the limited achievable connectivity - due to the featuring size - exploiting self-assemblies has been proposed as an alternative, in turn posing more challenges. In an atte… ▽ More Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high number of elements is thus mandatory. To surpass the limited achievable connectivity - due to the featuring size - exploiting self-assemblies has been proposed as an alternative, in turn posing more challenges. In an attempt for offering insight on what to expect when characterizing the collective electrical response of switching assemblies, in this work, networks of memristive elements are simulated. Collective electrical behaviour and maps of resistance states are characterized upon different electrical stimuli. By comparing the response of homogeneous and heterogeneous networks, we delineate differences that might be experimentally observed when the number of memristive units is scaled up and disorder arises as an inevitable feature. △ Less

Submitted 29 November, 2021; v1 submitted 12 August, 2021; originally announced August 2021.

Comments: Supplementary information comprises animated sequences of resistive maps corresponding to the internal state of each unit within the array both for the cycling experiment (Fig. 2 of the main text) and the sensitization one (Fig. 3 of the main) and is available upon request

Journal ref: Appl. Phys. Lett. 119, 193502 (2021)