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Electrically-gated laser-induced spin dynamics in magneto-electric iron garnet at room temperature
Authors:
T. T. Gareev,
N. E. Khokhlov,
L. Körber,
A. P. Pyatakov,
A. V. Kimel
Abstract:
Ultrafast pump-probe imaging reveals that the efficiency of optical excitation of coherent spins waves in epitaxial iron garnet films can be effectively controlled by an external electric field at room temperature. Although a femtosecond laser pulse alone does not excite any pronounced coherent spin oscillations, an electrical gating with the field of 0.5 MV/m dramatically changes the outcome in a…
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Ultrafast pump-probe imaging reveals that the efficiency of optical excitation of coherent spins waves in epitaxial iron garnet films can be effectively controlled by an external electric field at room temperature. Although a femtosecond laser pulse alone does not excite any pronounced coherent spin oscillations, an electrical gating with the field of 0.5 MV/m dramatically changes the outcome in a laser-induced launching of spin waves. The effect, demonstrated under room-temperature conditions, is estimated to be orders of magnitude larger than in magnetic van der Waals semiconductors observed at 10 K. This electrical gating of laser-induced spin dynamics enriches opto-magnonics with a new tool and thus opens up a new avenue in fundamental and applied magnonics research.
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Submitted 25 June, 2025;
originally announced June 2025.
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The curvature-induced magnetization in CrI3 bilayer: flexomagnetic effect enhancement in van der Waals antiferromagnets
Authors:
Lei Qiao,
Jan Sladek,
Vladimir Sladek,
Alexey S. Kaminskiy,
Alexander P. Pyatakov,
Wei Ren
Abstract:
The bilayer of CrI3 is a prototypical van der Waals 2D antiferromagnetic material with magnetoelectric effect. It is not generally known, however, that for symmetry reasons the flexomagnetic effect, i.e., the strain gradient-induced magnetization, is also possible in this material. In the present paper, based on the first principle calculations, we estimate the flexomagnetic effect to be 200 μBÅ t…
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The bilayer of CrI3 is a prototypical van der Waals 2D antiferromagnetic material with magnetoelectric effect. It is not generally known, however, that for symmetry reasons the flexomagnetic effect, i.e., the strain gradient-induced magnetization, is also possible in this material. In the present paper, based on the first principle calculations, we estimate the flexomagnetic effect to be 200 μBÅ that is two orders of magnitude higher than it was predicted for the referent antiperovskite flexomagnetic material Mn3GaN. The two major factors of flexomagnetic effect enhancement related to the peculiarities of antiferromagnetic structure of van der Waals magnets is revealed: the strain-dependent ferromagnetic coupling in each layer and large interlayer distance separating antiferromagnetically coupled ions. Since 2D systems are naturally prone to mechanical deformation, the emerging field of flexomagnetism is of special interest for application in spintronics of van der Waals materials and straintronics in particular.
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Submitted 11 July, 2023;
originally announced July 2023.
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Predicting the Structural, Electronic and Magnetic Properties of Few Atomic-layer Polar Perovskite
Authors:
Shaowen Xu,
Fanhao Jia,
Shunbo Hu,
A. Sundaresan,
Nikita Ter-Oganessian,
A. P. Pyatakov,
Jinrong Cheng,
Jincang Zhang,
Shixun Cao,
Wei Ren
Abstract:
Density functional theory (DFT) calculations are performed to predict the structural, electronic and magnetic properties of electrically neutral or charged few-atomic-layer (AL) oxides whose parent systems are based on polar perovskite $KTaO_{3}$. Their properties vary greatly with the number of ALs ($n_{AL}$) and the stoichiometric ratio. In the few-AL limit ($n_{AL}\leqslant 14$), the even AL (E…
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Density functional theory (DFT) calculations are performed to predict the structural, electronic and magnetic properties of electrically neutral or charged few-atomic-layer (AL) oxides whose parent systems are based on polar perovskite $KTaO_{3}$. Their properties vary greatly with the number of ALs ($n_{AL}$) and the stoichiometric ratio. In the few-AL limit ($n_{AL}\leqslant 14$), the even AL (EL) systems with chemical formula $(KTaO_{3})_{n}$ are semiconductors, while the odd AL (OL) systems with formula ($K_{n+1}Ta_{n}O_{3n+1}$ or $K_{n}Ta_{n+1}O_{3n+2}$) are half-metal except for the unique $KTa_{2}O_{5}$ case which is a semiconductor due to the large Peierls distortions. After reaching certain critical thickness ($n_{AL}>14$), the EL systems show ferromagnetic surface states, while ferromagnetism disappears in the OL systems. These predictions from fundamental complexity of polar perovskite when approaching the two-dimensional (2D) limit may be helpful for interpreting experimental observations later.
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Submitted 26 October, 2020;
originally announced October 2020.
