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New insights into crystallographic relation and lattice dynamics effects in {CdO/MgO} superlattices grown by plasma-assisted molecular beam epitaxy
Authors:
Aleksandra Wierzbicka,
Ewa Przezdziecka,
Igor Perlikowski,
Eunika Zielony,
Abinash Adhikari,
Anastasiia Lysak
Abstract:
This article explores the structural properties of molecular beam epitaxy grown {CdO/MgO} superlattices on sapphire substrates of different crystallographic orientations (a-, c-, r-, and m-plane). The investigations involve a comprehensive analysis using X-ray diffraction and Raman spectroscopy. High-resolution X-ray diffraction studies unveil a significant influence of surface symmetry on both th…
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This article explores the structural properties of molecular beam epitaxy grown {CdO/MgO} superlattices on sapphire substrates of different crystallographic orientations (a-, c-, r-, and m-plane). The investigations involve a comprehensive analysis using X-ray diffraction and Raman spectroscopy. High-resolution X-ray diffraction studies unveil a significant influence of surface symmetry on both the substrates and the epitaxial layers, particularly with respect to the occurrence of twins in the superlattices. Remarkably, no twins are observed on r-oriented sapphire substrates, resulting in improved interface and crystallographic quality. The results of studies demonstrated in this work show that the growth rate of CdO sublayers within {CdO/MgO} superlattices is intricately dependent on the substrate orientation. Notably, the c-plane and m-plane sapphire substrates yielded thicker CdO sublayers, indicating comparable growth rates for these crystallographic orientations. Conversely, the a-plane and r-plane orientations seemed to favor a slower growth rate of CdO sublayers.
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Submitted 17 February, 2025;
originally announced February 2025.
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Influence of the growth temperature and annealing on the optical properties of {CdO/ZnO}30 superlattices
Authors:
E. Przeździecka,
A. Lysak,
A. Adhikari,
M. Stachowicz,
A. Wierzbicka,
R. Jakiela,
K. Zeinab,
P. Sybilski,
A. Kozanecki
Abstract:
Optical properties of the short period {CdO/ZnO} superlattices grown by plasma assisted MBE were analyzed. The superlattice (SLs) structures were successfully obtained at different growth temperatures from 360 to 550 °C. Interestingly, the growth temperature of the SLs influences quality of multilayers and also optical properties of these structures. After annealing at 900°C by rapid thermal metho…
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Optical properties of the short period {CdO/ZnO} superlattices grown by plasma assisted MBE were analyzed. The superlattice (SLs) structures were successfully obtained at different growth temperatures from 360 to 550 °C. Interestingly, the growth temperature of the SLs influences quality of multilayers and also optical properties of these structures. After annealing at 900°C by rapid thermal method various defect luminescence located at different energetic positions , were detected, and intensity of luminescence strongly depends on applied growth temperature.
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Submitted 4 February, 2025;
originally announced February 2025.
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Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates
Authors:
Dawid Jarosz,
Ewa Bobko,
Marcin Stachowicz,
Ewa Przeździecka,
Piotr Krzemiński,
Marta Ruszała,
Anna Juś,
Małgorzata Trzyna-Sowa,
Kinga Maś,
Renata Wojnarowska-Nowak,
Oskar Nowak,
Daria Gudyka,
Brajan Tabor,
Michał Marchewka
Abstract:
This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix, and a method based on a Polish patent application number P.443805. The first two methods are commonly used, while the third differs in the sequence of successive…
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This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix, and a method based on a Polish patent application number P.443805. The first two methods are commonly used, while the third differs in the sequence of successive steps and the presence of Be doping at the initial growth stage. By comparing GaSb layers made by these methods for the same growth parameters, the most favorable procedure for forming a GaSb buffer layer is selected. Using GaAs substrates with a GaSb buffer layer is a cheaper alternative to using GaSb substrates in infrared detector structures based on II-type superlattices T2SL, such as InAs/GaSb. The quality of the GaSb buffer layer determines the quality of the subsequent layers that form the entire T2SL and affects factors such as dark current in terms of application
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Submitted 25 September, 2024;
originally announced September 2024.
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Temperature dependence of the bandgap of Eu doped {ZnCdO/ZnO}30 multilayer structures
Authors:
A. Lysak,
E. Przeździecka,
A. Wierzbicka,
R. Jakiela,
Z. Khosravizadeh,
M. Szot,
A. Adhikari,
A. Kozanecki
Abstract:
In situ Eu-doped {ZnCdO/ZnO}30 multilayer systems were grown on p-type Si-substrates and on quartz substrates by plasma-assisted molecular beam epitaxy. Various Eu concentrations in the samples were achieved by controlling temperature of the europium effusion cell. The properties of as-grown and annealed {ZnCdO/ZnO}30:Eu multilayers were investigated using secondary ion mass spectrometry (SIMS) an…
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In situ Eu-doped {ZnCdO/ZnO}30 multilayer systems were grown on p-type Si-substrates and on quartz substrates by plasma-assisted molecular beam epitaxy. Various Eu concentrations in the samples were achieved by controlling temperature of the europium effusion cell. The properties of as-grown and annealed {ZnCdO/ZnO}30:Eu multilayers were investigated using secondary ion mass spectrometry (SIMS) and X-ray diffraction methods. SIMS measurements showed that annealing at 700°C and 900°C practically did not change the Eu concentration and the rare earth depth profiles are uniform. It was found that the band gap depends on the concentration of Eu and it was changed by rapid thermal annealing. Varshni and Bose-Einstein equations were used to describe the temperature dependence of the band gap of {ZnCdO/ZnO}30:Eu multilayer structures and Debye and Einstein temperatures were obtained.
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Submitted 16 February, 2024;
originally announced February 2024.
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Pressure-dependent bandgap study of MBE grown {CdO/MgO} short period SLs using diamond anvil cell
Authors:
Abinash Adhikari,
Pawel Strak,
Piotr Dluzewski,
Agata Kaminska,
Ewa Przezdziecka
Abstract:
Semiconductor superlattices have found widespread applications in electronic industries. In this work, short-period superlattice structure (SLs) composed of CdO and MgO layers was grown using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. The optical property of the SLs was investigated by absorption measurement at room temperature. The ambient-pressure direct bandgap was found to…
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Semiconductor superlattices have found widespread applications in electronic industries. In this work, short-period superlattice structure (SLs) composed of CdO and MgO layers was grown using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. The optical property of the SLs was investigated by absorption measurement at room temperature. The ambient-pressure direct bandgap was found to be 2.76 eV. The pressure dependence of fundamental bandgap has been studied using a diamond anvil cell (DAC) technique. It has been found that the band-to-band transition shifts toward higher energy with applied pressure. The bandgap of SLs was varied from 2.76 eV to 2.87 eV with applied pressure varied from 0 to 5.9 GPa. The pressure coefficient for the direct bandgap of SLs was found to be 26 meV/GPa. The obtained experimental result was supported by theoretical results obtained using DFT calculations. The volume deformation potential was estimated using the empirical rule. We believe our findings may provide valuable insight for a better understanding of {CdO/MgO} SLs towards their future applications in optoelectronics.
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Submitted 13 February, 2024;
originally announced February 2024.
