Showing 1–8 of 8 results for author: Priyadarshi, S

In-situ electro-optic sampling of microwave signals under cryogenic conditions and for superconducting applications

Authors: Shekhar Priyadarshi, Oliver Kieler, Alexander Fernandez Scarioni, Judith Felgner, Abdulrahman Widaa, Johannes Kohlmann, Thomas Fordell, Jaani Nissilä, Antti Kemppinen, Mark Bieler

Abstract: We demonstrate a cryogenic electro-optic sampling (EOS) setup that allows for the measurement of microwave signals at arbitrary positions on a cryogenic chip-scale device. We use a Josephson Arbitrary Waveform Synthesizer (JAWS) to generate quantum-accurate voltage signals and measure them with the EOS setup, allowing for the calibration of its response, yielding traceability of the microwave meas… ▽ More We demonstrate a cryogenic electro-optic sampling (EOS) setup that allows for the measurement of microwave signals at arbitrary positions on a cryogenic chip-scale device. We use a Josephson Arbitrary Waveform Synthesizer (JAWS) to generate quantum-accurate voltage signals and measure them with the EOS setup, allowing for the calibration of its response, yielding traceability of the microwave measurements to a quantum standard. We use the EOS setup to determine the time-domain response of ultrafast cryogenic photodiodes and the electrical reflection coefficient, i.e., the S11 scattering parameter, in a superconducting transmission line. Finally, we introduce an optical femtosecond pulse source which can be used to study the fidelity of superconducting transmission lines and terminations, as well as reflections from elements like Josephson junction arrays imbedded in them. △ Less

Submitted 31 October, 2024; originally announced November 2024.

Comments: 16 pages

Cryogenic fiber-coupled electro-optic characterization platform for high-speed photodiodes

Authors: Shekhar Priyadarshi, Hao Tian, Alexander Fernandez Scarioni, Silke Wolter, Oliver Kieler, Johannes Kohlmann, Jaani Nissilä, Mark Bieler

Abstract: We have developed a cryogenic characterization platform for ultrafast photodiodes, whose time domain responses are extracted by electro-optic sampling using femtosecond laser pulses in a pump-probe configuration. The excitation of the photodiodes with the pump beam and the electro-optic sampling crystals with the probe beam are realized in a fully fiber-coupled manner. This allows us to place the… ▽ More We have developed a cryogenic characterization platform for ultrafast photodiodes, whose time domain responses are extracted by electro-optic sampling using femtosecond laser pulses in a pump-probe configuration. The excitation of the photodiodes with the pump beam and the electro-optic sampling crystals with the probe beam are realized in a fully fiber-coupled manner. This allows us to place the characterization platform in almost any temperature environment. As application example, we characterize the time-domain response of commercial p-i-n photodiodes with a nominal bandwidth of 20 GHz and 60 GHz at temperatures of 4 K and 300 K and in a large parameter range of photocurrent and reverse bias. For these photodiodes, we detect frequency components up to approximately 250 GHz, while the theoretical bandwidth of our sampling method exceeds 1 THz. Our measurements demonstrate a significant excitation power and temperature dependence of the photodiodes' ultrafast time responses, reflecting, most likely, changes in carrier mobilities and electric field screening. Since our system is an ideal tool to characterize and optimize the response of fast photodiodes at cryogenic temperatures, it has direct impact on applications in superconducting quantum technology such as the enhancement of optical links to superconducting qubits and quantum-accurate waveform generators. △ Less

Submitted 12 September, 2023; originally announced September 2023.

Comments: 17 pages, 4 figures

Ultrafast shift and rectification photocurrents in GaAs quantum wells: Excitation intensity dependence and the importance of bandmixing

Authors: H. T. Duc, R. Podzimski, S. Priyadarshi, M. Bieler, T. Meier

Abstract: A microscopic approach that is based on the multisubband semiconductor Bloch equations formulated in the basis of a 14-band ${\mathbf k} \cdot {\mathbf p}$ model is employed to compute the temporal dynamics of photocurrents in GaAs quantum wells following the excitation with femtosecond laser pulses. This approach provides a transparent description of the interband, intersubband, and intraband exc… ▽ More A microscopic approach that is based on the multisubband semiconductor Bloch equations formulated in the basis of a 14-band ${\mathbf k} \cdot {\mathbf p}$ model is employed to compute the temporal dynamics of photocurrents in GaAs quantum wells following the excitation with femtosecond laser pulses. This approach provides a transparent description of the interband, intersubband, and intraband excitations, fully includes all resonant as well as off-resonant excitations, and treats the light-matter interaction non-perturbatively. For linearly polarized excitations the photocurrents contain contributions from shift and rectification currents. We numerically compute and analyze these currents generated by the excitation with femtosecond laser pulses for [110]- and [111]-oriented GaAs quantum wells. It is shown that the often employed perturbative $χ^{(2)}$-approach breaks down for peak fields larger than about 10~kV/cm and that non-perturbative effects lead to a reduction of the peak values of the shift and rectification currents and to temporal oscillations which originate from Rabi flopping. In particular, we find a complex oscillatory photon energy dependence of the magnitudes of the shift and rectification currents. Our simulations demonstrate that this dependence is the result of mixing between the heavy- and light-hole valence bands. This is a surprising finding since the bandmixing has an even larger influence on the strength of the photocurrents than the absorption coefficient. For [110]-oriented GaAs quantum wells the calculated photon energy dependence is compared to experimental results and a good agreement is obtained which validates our theoretical approach. △ Less

Submitted 22 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 94, 085305 (2016)

Ultrafast magneto-photocurrents as probe of anisotropy relaxation in GaAs

Authors: Christian B. Schmidt, Shekhar Priyadarshi, Klaus Pierz, Mark Bieler

Abstract: We induce ultrafast photocurrents in a GaAs crystal exposed to a magnetic field by optical femtosecond excitation. The magneto-photocurrents are studied by time-resolved detection of the simultaneously emitted THz radiation. We find that their dynamics differ considerably from the dynamics of other photocurrents which are expected to follow the temporal shape of the optical intensity. We attribute… ▽ More We induce ultrafast photocurrents in a GaAs crystal exposed to a magnetic field by optical femtosecond excitation. The magneto-photocurrents are studied by time-resolved detection of the simultaneously emitted THz radiation. We find that their dynamics differ considerably from the dynamics of other photocurrents which are expected to follow the temporal shape of the optical intensity. We attribute this difference to the influence of carrier-anisotropy relaxation on the magneto-photocurrents. Our measurements show that the anisotropy relaxation for carrier densities ranging between $10^{16}$ cm$^{-3}$ and $5 \times 10^{17}$ cm$^{-3}$ occurs on two different time scales. While the slow time constant is approximately 100 fs long and most likely governed by electron-phonon scattering, the fast time constant is on the order of 10 fs and presumably linked to the valence band. Our studies not only help to better understand the microscopic origins of optically induced currents but - being even more important - show that magneto-photocurrents can be employed as novel probe of anisotropy relaxation in GaAs. This technique is applicable to all non-centrosymmetric bulk semiconductors. △ Less

Submitted 12 January, 2016; originally announced January 2016.

Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions

Authors: Christian B. Schmidt, Shekhar Priyadarshi, Sergey A. Tarasenko, Mark Bieler

Abstract: We induce ultrafast magneto-photocurrents in a GaAs crystal employing interband excitation with femtosecond laser pulses at room temperature and non-invasively separate surface and bulk contributions to the overall current response. The separation between the different symmetry contributions is achieved by measuring the simultaneously emitted terahertz radiation for different sample orientations.… ▽ More We induce ultrafast magneto-photocurrents in a GaAs crystal employing interband excitation with femtosecond laser pulses at room temperature and non-invasively separate surface and bulk contributions to the overall current response. The separation between the different symmetry contributions is achieved by measuring the simultaneously emitted terahertz radiation for different sample orientations. Excitation intensity and photon energy dependences of the magneto-photocurrents for linearly and circularly polarized excitations reveal an involvement of different microscopic origins, one of which we believe is the inverse Spin-Hall effect. Our experiments are important for a better understanding of the complex momentum-space carrier dynamics in magnetic fields. △ Less

Submitted 16 February, 2015; originally announced February 2015.

All-optically induced currents resulting from frequency modulated coherent polarization

Authors: Shekhar Priyadarshi, Klaus Pierz, Mark Bieler

Abstract: We employ polarization-shaped ultrafast optical pulses to generate photocurrents which only arise if the optically induced coherent polarization is frequency modulated. This frequency modulation is obtained via detuned excitation of light-hole excitons in (110)-oriented GaAs quantum wells. The observed photocurrents vanish for resonant excitation of excitons and reverse their direction with a chan… ▽ More We employ polarization-shaped ultrafast optical pulses to generate photocurrents which only arise if the optically induced coherent polarization is frequency modulated. This frequency modulation is obtained via detuned excitation of light-hole excitons in (110)-oriented GaAs quantum wells. The observed photocurrents vanish for resonant excitation of excitons and reverse their direction with a change of the sign of detuning. Moreover, the currents do not exist for continuous-wave excitation. Our work reveals the existence of a new class of photocurrents and visualizes the complexity of current response tensors. This is helpful for the better understanding of optically induced microscopic transport in semiconductors. △ Less

Submitted 19 February, 2013; originally announced February 2013.

Journal ref: Appl. Phys. Lett. 102, 112102 (2013)

All-optically induced ultrafast photocurrents: Beyond the instantaneous coherent response

Authors: Shekhar Priyadarshi, Klaus Pierz, Mark Bieler

Abstract: It is demonstrated that the non-instantaneous response of the optically induced coherent polarization tremendously influences the real-space shift of electronic charges in semiconductors. The possibility to coherently control this real-space shift with temporally non-overlapping excitation pulses allows for the observation of a new type of shift current, which only exists for certain polarization-… ▽ More It is demonstrated that the non-instantaneous response of the optically induced coherent polarization tremendously influences the real-space shift of electronic charges in semiconductors. The possibility to coherently control this real-space shift with temporally non-overlapping excitation pulses allows for the observation of a new type of shift current, which only exists for certain polarization-shaped excitation pulses and vanishes in the continuous-wave limit. In contrast to previously studied shift currents, the new current requires a phase mismatch between two orthogonal transition dipole moments and leads, within a nonlinear second-order description, to a tensor which is antisymmetric with respect to the order of the two exciting electric field amplitudes. These observations, which can even be made at room temperature and are expected to occur in a variety of semiconductor crystal classes, contribute to a better understanding of light-matter interaction involving degenerate bands. Thus, they are expected to prove important for future studies of coherent and nonlinear optical effects in semiconductors. △ Less

Submitted 7 September, 2012; originally announced September 2012.

Journal ref: Phys. Rev. Lett. 109, 216601 (2012)

Statistics of Night time Ionospheric Scintillation Using GPS data at low latitude ground station Varanasi

Authors: S. Priyadarshi, A. K. Singh

Abstract: Ionospheric scintillation is the rapid change in the phase and/or the amplitude of a radio signal as it passes through small scale plasma density irregularities in the ionosphere. These scintillations not only can reduce the accuracy of GPS/Satellite Based Augmentation System (SBAS) receiver pseudo-range and carrier phase measurement but also can result in a complete loss of lock on a satellite. S… ▽ More Ionospheric scintillation is the rapid change in the phase and/or the amplitude of a radio signal as it passes through small scale plasma density irregularities in the ionosphere. These scintillations not only can reduce the accuracy of GPS/Satellite Based Augmentation System (SBAS) receiver pseudo-range and carrier phase measurement but also can result in a complete loss of lock on a satellite. Scintillation in the ionosphere varies as the sun spot number (SSN), Geomagnetic index (o < Kp < 9), time of year, time of day, geographical position. Most scintillation occurs for a few hours after sunset during the peak years of the solar cycle. Typically delay locked loop/phase locked loop designs of GPS/SBAS receivers enable them to handle moderate amount if scintillations. Consequently, any attempt to determine the effects of scintillations on GPS/SBAS must consider both predictions of scintillation activity in the ionosphere and residual effect of this activity after processing by a receiver. In this work dual frequency (f1 = 1.5 GHz, f2 = 1.2 GHz) GPS data recorded at low latitude station Varanasi (Geographic latitude 250 18/ N, longitude 820 59/ E) have been analyzed to monitor the amplitude scintillation index (S4) from January 2009 to December 2009. These analyzed data is used to study the monthly and seasonal variability of ionospheric plasma bubbles at low latitude. We have studied the power spectral density of the signal and using it we have calculated the estimated scintillation pattern velocity. △ Less

Submitted 9 August, 2012; originally announced August 2012.