The impact of strain on the GeV-color center in diamond
Authors:
Thijs G. I. van Wijk,
E. Aylin Melan,
Rani Mary Joy,
Emerick Y. Guillaume,
Paulius Pobedinskas,
Ken Haenen,
Danny E. P. Vanpoucke
Abstract:
Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate the impact of strain on the zero-phonon line (ZPL) position of GeV$^0$. Both hydrostatic and linear strain are modeled using density functional theory for GeV$^0$ concentrations of $1.61$ \% down to $0.10$ \%. We present qualitative and quantitative differences between th…
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Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate the impact of strain on the zero-phonon line (ZPL) position of GeV$^0$. Both hydrostatic and linear strain are modeled using density functional theory for GeV$^0$ concentrations of $1.61$ \% down to $0.10$ \%. We present qualitative and quantitative differences between the two strain types: for hydrostatic tensile and compressive strain, red-and blue-shifted ZPL positions are expected, respectively, with a linear relation between the ZPL shift and the experienced stress. By calculating the ZPL shift for varying GeV$^0$ concentrations, a shift of $0.15$ nm/GPa ($0.38$ meV/GPa) is obtained at experimentally relevant concentrations using a hybrid functional. In contrast, only red-shifted ZPL are found for tensile and compressive linear strain along the $\langle100\rangle$ direction. The calculated ZPL shift exceeds that of hydrostatic strain by at least one order of magnitude, with a significant difference between tensile and compressive strains: $3.2$ and $4.8$ nm/GPa ($8.1$ and $11.7$ meV/GPa), respectively. In addition, a peak broadening is expected due to the lifted degeneracy of the GeV$^0$ $e_g$ state, calculated to be about $6$ meV/GPa. These calculated results are placed in perspective with experimental observations, showing values of ZPL shifts and splittings of comparable magnitude.
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Submitted 16 January, 2025; v1 submitted 18 December, 2024;
originally announced December 2024.
Electrical excitation of color centers in phosphorus-doped diamond Schottky diodes
Authors:
Florian Sledz,
Igor A. Khramtsov,
Assegid M. Flatae,
Stefano Lagomarsino,
Silvio Sciortino,
Shannon S. Nicley,
Rozita Rouzbahani,
Paulius Pobedinskas,
Tianxiao Guo,
Xin Jiang,
Paul Kienitz,
Peter Haring Bolivar,
Ken Haenen,
Dmitry Yu. Fedyanin,
Mario Agio
Abstract:
A robust quantum light source operating upon electrical injection at ambient conditions is desirable for practical implementation of quantum technologies, such as quantum key distribution or metrology. Color centers in diamond are promising candidates as they are photostable emitters at room and elevated temperatures. The possibility of their electrical excitation has already been demonstrated wit…
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A robust quantum light source operating upon electrical injection at ambient conditions is desirable for practical implementation of quantum technologies, such as quantum key distribution or metrology. Color centers in diamond are promising candidates as they are photostable emitters at room and elevated temperatures. The possibility of their electrical excitation has already been demonstrated within p-i-n diodes. However, this requires the growth of complex diamond structures. In contrast to these conventional approaches, we demonstrate the emission of color centers under electrical pumping in a novel Schottky diode configuration based on hydrogen passivated n-type diamond, which holds promise for integrated single-photon emitting devices based on color centers in diamond.
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Submitted 10 October, 2024; v1 submitted 2 August, 2024;
originally announced August 2024.
