Showing 1–2 of 2 results for author: Plenet, J
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Coherent emission from a disordered organic semiconductor induced by strong coupling with surface plasmons
Authors:
S. Aberra Guebrou,
C. Symonds,
E. Homeyer,
J. C. Plenet,
Yu. N. Gartstein,
V. M. Agranovich,
J. Bellessa
Abstract:
In this Letter we show that the strong coupling between a disordered set of molecular emitters and surface plasmons leads to the formation of spatially coherent hybrid states extended on acroscopic distances. Young type interferometric experiments performed on a system of J-aggregated dyes spread on a silver layer evidence the coherent emission from different molecular emitters separated by severa…
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In this Letter we show that the strong coupling between a disordered set of molecular emitters and surface plasmons leads to the formation of spatially coherent hybrid states extended on acroscopic distances. Young type interferometric experiments performed on a system of J-aggregated dyes spread on a silver layer evidence the coherent emission from different molecular emitters separated by several microns. The coherence is absent in systems in the weak coupling regime demonstrating the key role of the hybridization of the molecules with the plasmon.
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Submitted 24 November, 2011;
originally announced November 2011.
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Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer
Authors:
J. Bellessa,
C. Symonds,
C. Meynaud,
J. C. Plenet,
E. Cambril,
A. Miard,
L. Ferlazzo,
A. Lemaitre
Abstract:
We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the…
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We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the plasmon/light-hole exciton and 22 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling were also discussed and qualitatively related to the plasmon polarization.
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Submitted 24 September, 2008;
originally announced September 2008.