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Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-incidence Response in the Long-wavelength Infrared
Authors:
Mohammad Karimi,
Magnus Heurlin,
Steven Limpert,
Vishal Jain,
Xulu Zeng,
Irene Geijselaers,
Ali Nowzari,
Ying Fu,
Lars Samuelson,
Heiner Linke,
Magnus T. Borgstrom,
Hakan Pettersson
Abstract:
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavele…
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Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavelength infrared. In particular, the infrared response from 3-20 um is enabled by normal incidence excitation of intersubband transitions in low-bandgap InAsP quantum discs synthesized axially within InP nanowires. The optical characteristics are explained by the excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors, combined with a non-symmetric potential profile of the discs resulting from synthesis. Our results provide a generalizable insight into how broadband nanowire photodetectors may be designed, and how engineered nanowire heterostructures open up new fascinating opportunities for optoelectronics.
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Submitted 10 September, 2017;
originally announced September 2017.
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InP/InAsP Nanowire-based Spatially Separate Absorption and Multiplication Avalanche Photodetectors
Authors:
Vishal Jain,
Magnus Heurlin,
Enrique Barrigon,
Lorenzo Bosco,
Ali Nowzari,
Shishir Shroff,
Virginia Boix,
Mohammad Karimi,
Reza J. Jam,
Alexander Berg,
Lars Samuelson,
Magnus T. Borgström,
Federico Capasso,
Håkan Pettersson
Abstract:
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials…
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Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials required for absorption at 1.3/1.55 um. Self-assembled III-V semiconductor nanowires offer key advantages such as enhanced absorption due to optical resonance effects, strain-relaxed heterostructures and compatibility with main-stream silicon technology. Here, we present electrical and optical characteristics of single InP and InP/InAsP nanowire APD structures. Temperature-dependent breakdown characteristics of p+-n-n+ InP nanowire devices were investigated first. A clear trap-induced shift in breakdown voltage was inferred from I-V measurements. An improved contact formation to the p+-InP segment was observed upon annealing, and its effect on breakdown characteristics was investigated. The bandgap in the absorption region was subsequently varied from pure InP to InAsP to realize spatially separate absorption and multiplication APDs in heterostructure nanowires. In contrast to the homojunction APDs, no trap-induced shifts were observed for the heterostructure APDs. A gain of 12 was demonstrated for selective optical excitation of the InAsP segment. Additional electron beam-induced current measurements were carried out to investigate the effect of local excitation along the nanowire on the I-V characteristics. Our results provide important insight for optimization of avalanche photodetector devices based on III-V nanowires.
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Submitted 3 June, 2017;
originally announced June 2017.
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Comparing a 41-year model hindcast with decades of wave measurements from the Baltic Sea
Authors:
Jan-Victor Björkqvist,
Ingvar Lukas,
Victor Alari,
Gerbrant Ph. van Vledder,
Sander Hulst,
Heidi Pettersson,
Arno Behrens,
Aarne Männik
Abstract:
We present ice-free and ice-included statistics for the Baltic Sea using a wave hindcast validated against data from 13 wave measurement sites. In the hindcast 84% of wave events with a significant wave height over 7 m occurred between November and January. The effect of the ice cover is largest in the Bay of Bothnia, where the mean significant wave height is reduced by 30% when the ice time is in…
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We present ice-free and ice-included statistics for the Baltic Sea using a wave hindcast validated against data from 13 wave measurement sites. In the hindcast 84% of wave events with a significant wave height over 7 m occurred between November and January. The effect of the ice cover is largest in the Bay of Bothnia, where the mean significant wave height is reduced by 30% when the ice time is included in the statistics. The difference between these two statistics are less than 0.05 m below a latitude of 59.5 degrees. The seasonal ice cover also causes measurement gaps by forcing an early recovery of the instruments. Including the time not captured by the wave buoy can affect the estimates for the significant wave height by roughly 20%. The impact below the 99th percentiles are still under 5%. The significant wave height is modelled accurately even close to the shore, but the highest peak periods are underestimated in a narrow bay. Sensitivity test show that this underestimation is most likely caused by an excessive refraction towards the shore. Reconsidering the role of the spatial resolution and the physical processes affecting the low-frequency waves is suggested as a possible solution.
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Submitted 9 February, 2018; v1 submitted 1 May, 2017;
originally announced May 2017.
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Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions
Authors:
R. S. Liu,
L. Michalak,
C. M. Canali,
L. Samuelson,
H. Pettersson
Abstract:
We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-or…
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We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.
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Submitted 13 January, 2008;
originally announced January 2008.
