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Measurements of Beam Backgrounds in SuperKEKB Phase 2
Authors:
Zachary J. Liptak,
Antonio Paladino,
Luka Santelj,
Jeffery Schueler,
Slavomira Stefkova,
Hikaru Tanigawa,
Noritsugu Tsuzuki,
Alberto Aloisio,
Patrick Ahlburg,
Philip Bambade,
Giovanni Bassi,
Matthew Barrett,
Jerome Baudot,
Thomas Browder,
Giulia Casarosa,
Giuseppe Cautero,
David Cinabro,
Gilles Claus,
Daniel Cuesta,
Francesco Di Capua,
Salvatore Di Carlo,
John Flanagan,
Ariane Frey,
Bryan Fulsom,
Yoshihiro Funakoshi
, et al. (44 additional authors not shown)
Abstract:
The high design luminosity of the SuperKEKB electron-positron collider will result in challenging levels of beam-induced backgro\ unds in the interaction region. Understanding and mitigating these backgrounds is critical to the success of the Belle~II experi\ ment. We report on the first background measurements performed after roll-in of the Belle II detector, a period known as SuperKE\ KB Phase 2…
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The high design luminosity of the SuperKEKB electron-positron collider will result in challenging levels of beam-induced backgro\ unds in the interaction region. Understanding and mitigating these backgrounds is critical to the success of the Belle~II experi\ ment. We report on the first background measurements performed after roll-in of the Belle II detector, a period known as SuperKE\ KB Phase 2, utilizing both the BEAST II system of dedicated background detectors and the Belle II detector itself. We also repor\ t on first revisions to the background simulation made in response to our findings. Backgrounds measured include contributions f\ rom synchrotron radiation, beam-gas, Touschek, and injection backgrounds. At the end of Phase 2, single-beam backgrounds origina\ ting from the 4 GeV positron Low Energy Ring (LER) agree reasonably well with simulation, while backgrounds from the 7 GeV elect\ ron High Energy Ring (HER) are approximately one order of magnitude higher than simulation. We extrapolate these backgrounds for\ ward and conclude it is safe to install the Belle II vertex detector.
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Submitted 29 December, 2021;
originally announced December 2021.
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Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment
Authors:
Harrison Schreeck,
Benjamin Schwenker,
Philipp Wieduwilt,
Ariane Frey,
Botho Paschen,
Florian Lütticke,
Patrick Ahlburg,
Jochen Dingfelder,
Carlos Marinas,
Ladislav Andricek,
Rainer Richter
Abstract:
For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiat…
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For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiation from the accelerator. An irradiation campaign was performed to verify that the PXD can cope with the expected amount of radiation. We present the results of this measurement campaign in which an X-ray machine was used to irradiate a single PXD half-ladder to a total dose of 266 kGy. The half-ladder is from the same batch as the half-ladders used for Belle II. According to simulations, the total accumulated dose corresponds to 7-10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. We discuss the effects on the DEPFET sensors, as well as the performance of the front-end electronics. In addition, we present efficiency studies of the half-ladder from beam tests performed before and after the irradiation.
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Submitted 22 September, 2021;
originally announced September 2021.
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Performance of production modules of the Belle II pixel detector in a high-energy particle beam
Authors:
P. Wieduwilt,
B. Paschen,
H. Schreeck,
B. Schwenker,
J. Soltau,
P. Ahlburg,
J. Dingfelder,
A. Frey,
P. Gomis,
F. Lütticke,
C. Marinas
Abstract:
The Belle II experiment at the Super B factory SuperKEKB, an asymmetric $e^+e^-$ collider located in Tsukuba, Japan, is tailored to perform precision B physics measurements. The centre of mass energy of the collisions is equal to the rest mass of the $Υ(4S)$ resonance of $m_{Υ(4S)} = 10.58\,\rm GeV$. A high vertex resolution is essential for measuring the decay vertices of B mesons. Typical moment…
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The Belle II experiment at the Super B factory SuperKEKB, an asymmetric $e^+e^-$ collider located in Tsukuba, Japan, is tailored to perform precision B physics measurements. The centre of mass energy of the collisions is equal to the rest mass of the $Υ(4S)$ resonance of $m_{Υ(4S)} = 10.58\,\rm GeV$. A high vertex resolution is essential for measuring the decay vertices of B mesons. Typical momenta of the decay products are ranging from a few tens of MeV to a few GeV and multiple scattering has a significant impact on the vertex resolution. The VerteX Detector (VXD) for Belle II is therefore designed to have as little material as possible inside the acceptance region. Especially the innermost two layers, populated by the PiXel Detector (PXD), have to be ultra-thin. The PXD is based on DEpleted P-channel Field Effect Transistors (DEPFETs) with a thickness of only $75\,\rmμm$. Spatial resolution and hit efficiency of production detector modules were studied in beam tests performed at the DESY test beam facility. The spatial resolution was investigated as a function of the incidence angle and improvements due to charge sharing are demonstrated. The measured module performance is compatible with the requirements for Belle II.
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Submitted 22 January, 2021;
originally announced January 2021.
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EUDAQ $-$ A Data Acquisition Software Framework for Common Beam Telescopes
Authors:
P. Ahlburg,
S. Arfaoui,
J. -H. Arling,
H. Augustin,
D. Barney,
M. Benoit,
T. Bisanz,
E. Corrin,
D. Cussans,
D. Dannheim,
J. Dreyling-Eschweiler,
T. Eichhorn,
A. Fiergolski,
I. -M. Gregor,
J. Grosse-Knetter,
D. Haas,
L. Huth,
A. Irles,
H. Jansen,
J. Janssen,
M. Keil,
J. S. Keller,
M. Kiehn,
H. J. Kim,
J. Kroll
, et al. (32 additional authors not shown)
Abstract:
EUDAQ is a generic data acquisition software developed for use in conjunction with common beam telescopes at charged particle beam lines. Providing high-precision reference tracks for performance studies of new sensors, beam telescopes are essential for the research and development towards future detectors for high-energy physics. As beam time is a highly limited resource, EUDAQ has been designed…
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EUDAQ is a generic data acquisition software developed for use in conjunction with common beam telescopes at charged particle beam lines. Providing high-precision reference tracks for performance studies of new sensors, beam telescopes are essential for the research and development towards future detectors for high-energy physics. As beam time is a highly limited resource, EUDAQ has been designed with reliability and ease-of-use in mind. It enables flexible integration of different independent devices under test via their specific data acquisition systems into a top-level framework. EUDAQ controls all components globally, handles the data flow centrally and synchronises and records the data streams. Over the past decade, EUDAQ has been deployed as part of a wide range of successful test beam campaigns and detector development applications.
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Submitted 18 November, 2019; v1 submitted 30 September, 2019;
originally announced September 2019.
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Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC
Authors:
S. Terzo,
A. Macchiolo,
R. Nisius,
B. Paschen
Abstract:
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $μ$m, produced at CiS, and 100-200 $μ$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active…
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Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $μ$m, produced at CiS, and 100-200 $μ$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of $1.4\times10^{16}n_{eq}/cm^{2}$.
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Submitted 20 November, 2014; v1 submitted 30 September, 2014;
originally announced September 2014.