Showing 1–4 of 4 results for author: Palermo, S

Mixed Precision Photonic Computing with 3D Electronic-Photonic Integrated Circuits

Authors: Georgios Charalampous, Rui Chen, Mehmet Berkay On, Aslan Nasirov, Chun-Yi Cheng, Mahmoud AbdelGhany, Arka Majumdar, Ji Wang, Jennifer A. Black, Rajkumar Chinnakonda Kubendran, Caglar Oskay, Zhaojun Bai, Sam Palermo, Scott B. Papp, S. J. Ben Yoo

Abstract: We propose advancing photonic in-memory computing through three-dimensional photonic-electronic integrated circuits using phase-change materials (PCM) and AlGaAs-CMOS technology. These circuits offer high precision (greater than 12 bits), scalability (greater than 1024 by 1024), and massive parallelism (greater than 1 million operations) across the wavelength, spatial, and temporal domains at ultr… ▽ More We propose advancing photonic in-memory computing through three-dimensional photonic-electronic integrated circuits using phase-change materials (PCM) and AlGaAs-CMOS technology. These circuits offer high precision (greater than 12 bits), scalability (greater than 1024 by 1024), and massive parallelism (greater than 1 million operations) across the wavelength, spatial, and temporal domains at ultra-low power (less than 1 watt per PetaOPS). Monolithically integrated hybrid PCM-AlGaAs memory resonators handle coarse-precision iterations (greater than 5-bit most significant bit precision) through reversible PCM phase transitions. Electro-optic memristive tuning enables fine-precision updates (greater than 8-bit least significant bit precision), resulting in over 12-bit precision for in-memory computing. The use of low-loss PCM (less than 0.01 dB per cm) and electro-optical tuning yields memristive optical resonators with high Q-factors (greater than 1 million), low insertion loss, and low tuning power. A W by W photonic tensor core composed of PCM-AlGaAs memresonators performs general matrix multiplication (GEMM) across W wavelengths from optical frequency combs, with minimal crosstalk and loss. Hierarchical scaling in the wavelength domain (K) and spatial domain (L) enables this system to address high-dimensional (N) scientific partial differential equation (PDE) problems in a single constant-time operation, compared to the conventional quadratic-time (N squared) computational complexity. △ Less

Submitted 5 August, 2025; originally announced August 2025.

Gigahertz directional light modulation with electro-optic metasurfaces

Authors: Sam Lin, Yixin Chen, Taeseung Hwang, Anant Upadhyay, Ramy Rady, David Dolt, Samuel Palermo, Kamran Entesari, Christi Madsen, Zi Jing Wong, Shoufeng Lan

Abstract: Active metasurfaces promise spatiotemporal control over optical wavefronts, but achieving high-speed modulation with pixel-level control has remained an unmet challenge. While local phase control can be achieved with nanoscale optical confinement, such as in plasmonic nanoparticles, the resulting electrode spacings lead to large capacitance, limiting speed. Here, we demonstrate the operation of a… ▽ More Active metasurfaces promise spatiotemporal control over optical wavefronts, but achieving high-speed modulation with pixel-level control has remained an unmet challenge. While local phase control can be achieved with nanoscale optical confinement, such as in plasmonic nanoparticles, the resulting electrode spacings lead to large capacitance, limiting speed. Here, we demonstrate the operation of a gigahertz-tunable metasurface for beam steering through local control of metasurface elements in a plasmonic-organic hybrid architecture. Our device comprises a corrugated metallic slot array engineered to support plasmonic quasi-bound states in the continuum (quasi-BICs). These plasmonic quasi-BICs provide ideal optical confinement and electrical characteristics for integrating organic electro-optic (OEO) materials like JRD1 and have not been previously utilized in optical metasurfaces. We obtain a quasi-static resonance tunability of 0.4 nm/V, which we leverage to steer light between three diffraction orders and achieve an electro-optic bandwidth of ~4 GHz, with the potential for further speed improvements through scaling rules. This work showcases on-chip spatiotemporal control of light at the sub-micrometer and gigahertz level, opening new possibilities for applications in 3D sensing and high-speed spatial light modulation. △ Less

Submitted 10 January, 2025; originally announced January 2025.

Comments: 17 pages, 5 figures

A 40Gb/s Linear Redriver with Multi-Band Equalization in 130nm SiGe BiCMOS

Authors: Tong Liu, Yuanming Zhu, Anil Korkmaz, Siamak Delshadpour, Samuel Palermo

Abstract: A linear redriver circuit implements multi-band equalization techniques to efficiently compensate for high-frequency channel loss and extend high-speed wireline link reach. Input and output stage emitter-follower buffers with dual AC and DC paths provide programmable low-frequency peaking for channel skin effect, while a continuous-time linear equalizer (CTLE) utilizes RC degeneration in the input… ▽ More A linear redriver circuit implements multi-band equalization techniques to efficiently compensate for high-frequency channel loss and extend high-speed wireline link reach. Input and output stage emitter-follower buffers with dual AC and DC paths provide programmable low-frequency peaking for channel skin effect, while a continuous-time linear equalizer (CTLE) utilizes RC degeneration in the input stage for mid-band peaking and a subsequent feedback structure contributes to additional high-frequency peaking to compensate for the additional dielectric loss effects. A variable-gain amplifier (VGA) stage provides up to 7.1dB tunable gain and utilizes negative capacitive loads for bandwidth extension. Input and output return loss of -11.0dB and -12.2dB is respectively achieved at 20GHz with input and output T-coil stages that distribute the ESD circuitry capacitance. Fabricated in a 130nm SiGe BiCMOS process, the redriver achieves 23.5dB max peaking at 20GHz and supports a 1Vppd linear output swing. Per-channel power consumption is 115.2mW from a 1.8V supply. △ Less

Submitted 20 August, 2022; originally announced August 2022.

Comments: It's an accepted paper from BCICTS 2021

A 1.5GS/s 8b Pipelined-SAR ADC with Output Level Shifting Settling Technique in 14nm CMOS

Authors: Yuanming Zhu, Shengchang Cai, Shiva Kiran, Yang-Hang Fan, Po-Hsuan Chang, Sebastian Hoyos, Samuel Palermo

Abstract: A single channel 1.5GS/s 8-bit pipelined-SAR ADC utilizes a novel output level shifting (OLS) settling technique to reduce the power and enable low-voltage operation of the dynamic residue amplifier. The ADC consists of a 4-bit first stage and a 5-bit second stage, with 1-bit redundancy to relax the offset, gain, and settling requirements of the first stage. Employing the OLS technique allows for… ▽ More A single channel 1.5GS/s 8-bit pipelined-SAR ADC utilizes a novel output level shifting (OLS) settling technique to reduce the power and enable low-voltage operation of the dynamic residue amplifier. The ADC consists of a 4-bit first stage and a 5-bit second stage, with 1-bit redundancy to relax the offset, gain, and settling requirements of the first stage. Employing the OLS technique allows for an inter-stage gain of ~4 from the dynamic residue amplifier with a settling time that is only 28% of a conventional CML amplifier. The ADC's conversion speed is further improved with the use of parallel comparators in the two asynchronous stages. Fabricated in a 14nm FinFET technology, the ADC occupies 0.0013mm2 core area and operates with a 0.8V supply. 6.6-bit ENOB is achieved at Nyquist while consuming 2.4mW, resulting in an FOM of 16.7fJ/conv.-step. △ Less

Submitted 20 August, 2022; v1 submitted 8 January, 2022; originally announced January 2022.

Comments: it is a 4 page and 9 figure IEEE Custom Integrated Circuit Conference paper

Journal ref: IEEE Custom Integrated Circuit Conference 2020