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High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Authors:
Seungheon Shin,
Hridibrata Pal,
Jon Pratt,
John Niroula,
Yinxuan Zhu,
Chandan Joishi,
Brianna A. Klein,
Andrew Armstrong,
Andrew A. Allerman,
Tomás Palacios,
Siddharth Rajan
Abstract:
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) w…
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We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cut-off frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications.
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Submitted 17 April, 2025; v1 submitted 17 April, 2025;
originally announced April 2025.
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Remote-contact catalysis for target-diameter semiconducting carbon nanotube array
Authors:
Jiangtao Wang,
Xudong Zheng,
Gregory Pitner,
Xiang Ji,
Tianyi Zhang,
Aijia Yao,
Jiadi Zhu,
Tomás Palacios,
Lain-Jong Li,
Han Wang,
Jing Kong
Abstract:
Electrostatic catalysis has been an exciting development in chemical synthesis (beyond enzymes catalysis) in recent years, boosting reaction rates and selectively producing certain reaction products. Most of the studies to date have been focused on using external electric field (EEF) to rearrange the charge distribution in small molecule reactions such as Diels-Alder addition, carbene reaction, et…
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Electrostatic catalysis has been an exciting development in chemical synthesis (beyond enzymes catalysis) in recent years, boosting reaction rates and selectively producing certain reaction products. Most of the studies to date have been focused on using external electric field (EEF) to rearrange the charge distribution in small molecule reactions such as Diels-Alder addition, carbene reaction, etc. However, in order for these EEFs to be effective, a field on the order of 1 V/nm (10 MV/cm) is required, and the direction of the EEF has to be aligned with the reaction axis. Such a large and oriented EEF will be challenging for large-scale implementation, or materials growth with multiple reaction axis or steps. Here, we demonstrate that the energy band at the tip of an individual single-walled carbon nanotube (SWCNT) can be spontaneously shifted in a high-permittivity growth environment, with its other end in contact with a low-work function electrode (e.g., hafnium carbide or titanium carbide). By adjusting the Fermi level at a point where there is a substantial disparity in the density of states (DOS) between semiconducting (s-) and metallic (m-) SWCNTs, we achieve effective electrostatic catalysis for s-SWCNT growth assisted by a weak EEF perturbation (200V/cm). This approach enables the production of high-purity (99.92%) s-SWCNT horizontal arrays with narrow diameter distribution (0.95+-0.04 nm), targeting the requirement of advanced SWCNT-based electronics for future computing. These findings highlight the potential of electrostatic catalysis in precise materials growth, especially for s-SWCNTs, and pave the way for the development of advanced SWCNT-based electronics.
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Submitted 3 April, 2024;
originally announced April 2024.
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Waveguide-Integrated Mid-Infrared Photodetection using Graphene on a Scalable Chalcogenide Glass Platform
Authors:
Jordan Goldstein,
Hongtao Lin,
Skylar Deckoff-Jones,
Marek Hempel,
Ang-Yu Lu,
Kathleen A. Richardson,
Tomas Palacios,
Jing Kong,
Juejun Hu,
Dirk Englund
Abstract:
The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black…
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The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black phosphorus and tellurene. However, material bandgaps and reliance on SiO$_2$ substrates limit operation to wavelengths $λ\lesssim4\,μ\textrm{m}$. Here we overcome these challenges with a chalcogenide glass-on-CaF$_2$ PIC architecture incorporating split-gate photothermoelectric graphene photodetectors. Our design extends operation to $λ=5.2\,μ\textrm{m}$ with a Johnson noise-limited noise-equivalent power of $1.1\,\mathrm{nW}/\mathrm{Hz}^{1/2}$, no fall-off in photoresponse up to $f = 1\,\mathrm{MHz}$, and a predicted 3-dB bandwidth of $f_{3\textrm{dB}}>1\,\mathrm{GHz}$. This mid-IR PIC platform readily extends to longer wavelengths and opens the door to applications from distributed gas sensing and portable dual comb spectroscopy to weather-resilient free space optical communications.
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Submitted 29 December, 2021;
originally announced December 2021.
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On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells
Authors:
Laura Barrutia,
IvÁn Lombardero1,
Mario Ochoa,
Mercedes GabÁs,
IvÁn GarcÍa,
TomÁs Palacios,
Andrew Johnson,
Ignacio Rey-Stolle,
Carlos Algora
Abstract:
Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below 16%. Therefore, the photovoltaic potential of graphene has not been already shown. In this work the use of graphene for concentration applications on III-V mul…
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Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below 16%. Therefore, the photovoltaic potential of graphene has not been already shown. In this work the use of graphene for concentration applications on III-V multijunction solar cells, which indeed are the solar cells with the highest efficiency, is demonstrated. Firstly, a wide optoelectronic characterization of graphene layers is carried out. Then, the graphene layer is incorporated onto triple-junction solar cells, which decreases their series resistance by 35% (relative), leading to an increase in Fill Factor of 4% (absolute) at concentrations of 1,000 suns. Simultaneously, the optical absorption of graphene produces a relative short circuit current density decrease in the range of 0-1.8%. As a result, an absolute efficiency improvement close to 1% at concentrations of 1,000 suns was achieved with respect to triple junction solar cells without graphene. The impact of incorporating one and two graphene monolayers is also evaluated.
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Submitted 13 July, 2020;
originally announced July 2020.
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Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells
Authors:
Elaine McVay,
Ahmad Zubair,
Yuxuan Lin,
Amirhasan Nourbakhsh,
Tomás Palacios
Abstract:
Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high absorption coefficient and ease of integration with both arbitrary substrates as well as conventional semiconductor technologies. However, reported TMD-based solar cells suffer from relatively low external quantum effici…
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Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high absorption coefficient and ease of integration with both arbitrary substrates as well as conventional semiconductor technologies. However, reported TMD-based solar cells suffer from relatively low external quantum efficiencies (EQE) and low open circuit voltage due to unoptimized design and device fabrication. This paper studies $Pt/WSe_2$ vertical Schottky junction solar cells with various $WSe_2$ thicknesses in order to find the optimum absorber thickness.Also, we show that the photovoltaic performance can be improved via $Al_2O_3$ passivation which increases the EQE by up to 29.5% at 410 nm wavelength incident light. The overall resulting short circuit current improves through antireflection coating, surface doping, and surface trap passivation effects. Thanks to the ${Al_2O_3}$ coating, this work demonstrates a device with open circuit voltage ($V_{OC}$) of 380 mV and short circuit current density ($J_{SC}$) of 10.7 $mA/cm^2$. Finally, the impact of Schottky barrier height inhomogeneity at the $Pt/WSe_2$ contact is investigated as a source of open circuit voltage lowering in these devices
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Submitted 30 June, 2020;
originally announced June 2020.
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Deep-Learning-Enabled Fast Optical Identification and Characterization of Two-Dimensional Materials
Authors:
Bingnan Han,
Yuxuan Lin,
Yafang Yang,
Nannan Mao,
Wenyue Li,
Haozhe Wang,
Kenji Yasuda,
Xirui Wang,
Valla Fatemi,
Lin Zhou,
Joel I-Jan Wang,
Qiong Ma,
Yuan Cao,
Daniel Rodan-Legrain,
Ya-Qing Bie,
Efrén Navarro-Moratalla,
Dahlia Klein,
David MacNeill,
Sanfeng Wu,
Hikari Kitadai,
Xi Ling,
Pablo Jarillo-Herrero,
Jing Kong,
Jihao Yin,
Tomás Palacios
Abstract:
Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the d…
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Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the deep graphical features obtained through these tools are often unused because of difficulties in processing the data and finding the correlations. Such challenges can be well addressed by deep learning. In this work, we use the optical characterization of two-dimensional (2D) materials as a case study, and demonstrate a neural-network-based algorithm for the material and thickness identification of exfoliated 2D materials with high prediction accuracy and real-time processing capability. Further analysis shows that the trained network can extract deep graphical features such as contrast, color, edges, shapes, segment sizes and their distributions, based on which we develop an ensemble approach topredict the most relevant physical properties of 2D materials. Finally, a transfer learning technique is applied to adapt the pretrained network to other applications such as identifying layer numbers of a new 2D material, or materials produced by a different synthetic approach. Our artificial-intelligence-based material characterization approach is a powerful tool that would speed up the preparation, initial characterization of 2D materials and other nanomaterials and potentially accelerate new material discoveries.
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Submitted 27 January, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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N-polar AlN buffer growth by MOVPE for transistor applications
Authors:
J. Lemettinen,
H. Okumura,
T. Palacios,
S. Suihkonen
Abstract:
We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing high buffer leak current. The silicon concentration reduces from 2x1…
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We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing high buffer leak current. The silicon concentration reduces from 2x10^18 /cm^3 to 9x10^15 /cm^3 with decreasing growth temperature, reducing the buffer leak current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6x10^4 due to the high-resistivity AlN buffer layers.
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Submitted 9 November, 2018;
originally announced November 2018.
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MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Authors:
J. Lemettinen,
H. Okumura,
I. Kim,
M. Rudzinski,
J. Grzonka,
T. Palacios,
S. Suihkonen
Abstract:
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high temperature of 1165 degC, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/…
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We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high temperature of 1165 degC, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-um-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (002), (102) and (201) reflections, respectively.
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Submitted 8 November, 2018;
originally announced November 2018.
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MOVPE growth of N-polar AlN on 4H-SiC: effect of substrate miscut on layer quality
Authors:
J. Lemettinen,
H. Okumura,
I. Kim,
C. Kauppinen,
T. Palacios,
S. Suihkonen
Abstract:
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <-1100> by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1 deg and 4 deg miscut substrates were found to be 20000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagona…
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We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <-1100> by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1 deg and 4 deg miscut substrates were found to be 20000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1 deg towards <-1100>. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (002) and (102) reflections, respectively. The root mean square roughness was 0.43 nm for a 2 um x 2 um atomic force microscope scan.
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Submitted 8 November, 2018;
originally announced November 2018.
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Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs under Mist Exposure
Authors:
M. Fátima Romero,
Alberto Boscá,
Jorge Pedrós,
Javier Martínez,
Rajveer Fandan,
Tomás Palacios,
Fernando Calle
Abstract:
The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I_D,max) and the maximum transconductance (g_m,max) decreased gradually as the…
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The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I_D,max) and the maximum transconductance (g_m,max) decreased gradually as the mist exposure time increased, up to 23% and 10%, respectively. Moreover, the gate lag ratio (GLR) increased around 10% during mist exposure. In contrast, devices with a GL showed a robust behavior and not significant changes in the electrical characteristics in both DC and pulsed conditions. The origin of these behaviors has been discussed and the results pointed to the GL as the key factor for improving the moisture resistance of the SiN passivation layer.
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Submitted 31 May, 2018;
originally announced May 2018.
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Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride
Authors:
Amanuel M. Berhane,
Kwang-Yong Jeong,
Zoltán Bodrog,
Saskia Fiedler,
Tim Schröder,
Noelia Vico Triviño,
Tomás Palacios,
Adam Gali,
Milos Toth,
Dirk Englund,
Igor Aharonovich
Abstract:
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature…
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Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature photonic integrated circuit technologies. Hence, there is great interest in identifying quantum emitters in technologically mature semiconductors that are compatible with suitable heteroepitaxies. Here, we demonstrate robust single photon emitters based on defects in gallium nitride (GaN), the most established and well understood semiconductor that can emit light over the entire visible spectrum. We show that the emitters have excellent photophysical properties including a brightness in excess of 500x10^3 counts/s. We further show that the emitters can be found in a variety of GaN wafers, thus offering reliable and scalable platform for further technological development. We propose a theoretical model to explain the origin of these emitters based on cubic inclusions in hexagonal gallium nitride. Our results constitute a feasible path to scalable, integrated on-chip quantum technologies based on GaN.
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Submitted 15 October, 2016;
originally announced October 2016.
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Use of THz Photoconductive Sources to Characterize Tunable Graphene RF Plasmonic Antennas
Authors:
Albert Cabellos,
Ignacio Llátser,
Eduard Alarcón,
Allen Hsu,
Tomas Palacios
Abstract:
Graphene, owing to its ability to support plasmon polariton waves in the terahertz frequency range, enables the miniaturization of antennas to allow wireless communications among nanosystems. One of the main challenges in the demonstration of graphene antennas is finding suitable terahertz sources to feed the antenna. This paper estimates the performance of a graphene RF plasmonic micro-antenna fe…
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Graphene, owing to its ability to support plasmon polariton waves in the terahertz frequency range, enables the miniaturization of antennas to allow wireless communications among nanosystems. One of the main challenges in the demonstration of graphene antennas is finding suitable terahertz sources to feed the antenna. This paper estimates the performance of a graphene RF plasmonic micro-antenna fed with a photoconductive source. The terahertz source is modeled and, by means of a full-wave EM solver, the radiated power of the device is estimated with respect to material, laser illumination and antenna geometry parameters. The results show that the proposed device radiates terahertz pulses with an average power up to 1$μ$W, proving the feasibility of feeding miniaturized graphene antennas with photoconductive materials.
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Submitted 17 February, 2014; v1 submitted 27 January, 2014;
originally announced January 2014.
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Integrated GaN photonic circuits on silicon (100) for second harmonic generation
Authors:
Chi Xiong,
Wolfram Pernice,
Kevin K. Ryu,
Carsten Schuck,
King Y. Fong,
Tomas Palacios,
Hong X. Tang
Abstract:
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to be as high as 16 plu…
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We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of \{chi}(2) enabled sum-/difference-frequency processes.
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Submitted 20 January, 2014;
originally announced January 2014.
