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Colloidal quantum dot infrared lasers featuring sub-single-exciton threshold and very high gain
Authors:
Nima Taghipour,
Mariona Dalmases,
Guy L. Whitworth,
Andreas Othonos,
Sotirios Christodoulou,
Gerasimos Konstantatos
Abstract:
The use of colloidal quantum dots (CQDs) as a gain medium in infrared laser devices has been underpinned by the need for high pumping intensities, very short gain lifetimes and low gain coefficients.
The use of colloidal quantum dots (CQDs) as a gain medium in infrared laser devices has been underpinned by the need for high pumping intensities, very short gain lifetimes and low gain coefficients.
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Submitted 26 September, 2023;
originally announced September 2023.
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Low-threshold, highly stable colloidal quantum dot short-wave infrared laser enabled by suppression of trap-assisted Auger recombination
Authors:
Nima Taghipour,
Guy L. Whitworth,
Andreas Othonos,
Mariona Dalmases,
Santanu Pradhan,
Yongjie Wang,
Gaurav Kumar,
Gerasimos Konstantatos
Abstract:
Pb-chalcogenide colloidal quantum dots (CQDs) are attractive materials to be used as tuneable laser media across the infrared spectrum. However, excessive nonradiative Auger recombination due to the presence of trap states outcompetes light amplification by rapidly annihilating the exciton population, leading to high gain thresholds. Here, we employ a binary blend of CQDs and ZnO nanocrystals in o…
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Pb-chalcogenide colloidal quantum dots (CQDs) are attractive materials to be used as tuneable laser media across the infrared spectrum. However, excessive nonradiative Auger recombination due to the presence of trap states outcompetes light amplification by rapidly annihilating the exciton population, leading to high gain thresholds. Here, we employ a binary blend of CQDs and ZnO nanocrystals in order to passivate the in-gap trap states of PbS-CQD gain medium. Using transient absorption, we measure a five-fold increase in Auger lifetime demonstrating the suppression of trap-assisted Auger recombination. By doing so, we achieve a two-fold reduction in amplified spontaneous emission (ASE) threshold. Finally, by integrating our proposed binary blend to a DFB resonator, we demonstrate single-mode lasing emission at 1650 nm with a linewidth of 1.23 nm (0.62 meV), operating at a low lasing threshold of ~385 μJ.cm-2. The Auger suppression in this system has allowed to achieve unprecedented lasing emission stability for a CQD laser with recorded continuous operation of 5 hours at room temperature and ambient conditions.
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Submitted 25 March, 2022;
originally announced March 2022.
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Single-Exciton Gain and Stimulated Emission across the Infrared Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots
Authors:
Sotirios Christodoulou,
Iñigo Ramiro,
Andreas Othonos,
Alberto Figueroba,
Mariona Dalmases,
Onur Özdemir,
Santanu Pradhan,
Grigorios Itskos,
Gerasimos Konstantatos
Abstract:
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique o…
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Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique opportunity as an optical gain medium in view of their tunable bandgap, solution processability and CMOS compatibility. The 8-fold degeneracy of infrared CQDs based on Pb-chalcogenides has hindered the demonstration of low-threshold optical gain and lasing, at room temperature. We demonstrate room-temperature, infrared, size-tunable, band-edge stimulated emission with linewidth of ~14 meV. Leveraging robust electronic doping and charge-exciton interactions in PbS CQD thin films, we reach gain threshold at the single exciton regime representing a four-fold reduction from the theoretical limit of an eight-fold degenerate system, with a net modal gain in excess of 100 cm-1.
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Submitted 21 September, 2021;
originally announced September 2021.
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Single-Exciton Gain and Stimulated Emission Across the Infrared Optical Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots
Authors:
Sotirios Christodoulou,
Iñigo Ramiro,
Andreas Othonos,
Alberto Figueroba,
Mariona Dalmases,
Onur Özdemir,
Santanu Pradhan,
Grigorios Itskos,
Gerasimos Konstantatos
Abstract:
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a uni…
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Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique opportunity as an optical gain medium4 in view of their tunable bandgap, solution processability and CMOS compatibility. Their potential for narrower linewidths5 and the lower-than-bulk degeneracy6 has led to dramatic progress towards successful demonstration of optical gain4, stimulated emission7 and lasing8,9,10 in the visible part of spectrum utilizing CdSe-based CQDs. Infrared Pb-chalcogenide colloidal quantum dots however exhibit higher state degeneracy and as a result the demonstration of optical gain has imposed very high thresholds.11,12 Here we demonstrate room-temperature, infrared stimulated emission, tunable across the optical communication band, based on robust electronically doped PbS CQDs, that reach gain threshold at the single exciton regime, representing a four-fold reduction from the theoretical limit of an eight-fold degenerate system and two orders of magnitude lower than prior reports.
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Submitted 10 August, 2019;
originally announced August 2019.
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The influence of additives in the stoichiometry of hybrid lead halide perovskites
Authors:
Ignasi Burgués-Ceballos,
Achilleas Savva,
Efthymios Georgiou,
Konstantinos Kapnisis,
Paris Papagiorgis,
Androniki Mousikou,
Grigorios Itskos,
Andreas Othonos,
Stelios A Choulis
Abstract:
We investigate the employment of carefully selected solvent additives in the processing of a commercial perovskite precursor ink and analyze their impact on the performance of organometal trihalide perovskite photovoltaic devices. We provide evidence that the use of benzaldehyde can be used as an effective method to preserve the stoichiometry of the perovskite precursors in solution. Benzaldehyde…
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We investigate the employment of carefully selected solvent additives in the processing of a commercial perovskite precursor ink and analyze their impact on the performance of organometal trihalide perovskite photovoltaic devices. We provide evidence that the use of benzaldehyde can be used as an effective method to preserve the stoichiometry of the perovskite precursors in solution. Benzaldehyde based additive engineering shows to improve perovskite solid state film morphology and device performance of trihalide perovskite based solar cells.
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Submitted 19 July, 2018;
originally announced July 2018.
