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Neuromorphic information processing using ultrafast heat dynamics and quench switching of an antiferromagnet
Authors:
Jan Zubáč,
Miloslav Surýnek,
Kamil Olejník,
Andrej Farkaš,
Filip Krizek,
Lukáš Nádvorník,
Petr Kubaščík,
Zdeněk Kašpar,
František Trojánek,
Richard P. Campion,
Vít Novák,
Petr Němec,
Tomáš Jungwirth
Abstract:
Solving complex tasks in a modern information-driven society requires novel materials and concepts for energy-efficient hardware. Antiferromagnets offer a promising platform for seeking such approaches due to their exceptional features: low power consumption and possible high integration density are desirable for information storage and processing or applications in unconventional computing. Among…
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Solving complex tasks in a modern information-driven society requires novel materials and concepts for energy-efficient hardware. Antiferromagnets offer a promising platform for seeking such approaches due to their exceptional features: low power consumption and possible high integration density are desirable for information storage and processing or applications in unconventional computing. Among antiferromagnets, CuMnAs stands out for atomic-level scalable magnetic textures, analogue multilevel storage capability, and the magnetic state's control by a single electrical or femtosecond laser pulse. Using a pair of excitation laser pulses, this work examines synaptic and neuronal functionalities of CuMnAs for information processing, readily incorporating two principles of distinct characteristic timescales. Laser-induced transient heat dynamics at sub-nanosecond times represents the short-term memory and causes resistance switching due to quenching into a magnetically fragmented state. This quench switching, detectable electrically from ultrashort times to hours after writing, reminisces the long-term memory. The versatility of the principles' combination is demonstrated by operations commonly used in neural networks. Temporal latency coding, fundamental to spiking neural networks, is utilized to encode data from a grayscale image into sub-nanosecond pulse delays. Applying input laser pulses with distinct amplitudes then allows for pulse-pattern recognition. The results open pathways for designing novel computing architectures.
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Submitted 22 October, 2024;
originally announced October 2024.
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Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs
Authors:
J. J. F. Heitz,
L. Nádvorník,
V. Balos,
Y. Behovits,
A. L. Chekhov,
T. S. Seifert,
K. Olejník,
Z. Kašpar,
K. Geishendorf,
V. Novák,
R. P. Campion,
M. Wolf,
T. Jungwirth,
T. Kampfrath
Abstract:
We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines…
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We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller.
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Submitted 16 June, 2021;
originally announced June 2021.
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Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs
Authors:
Tomas Janda,
Joao Godinho,
Tomas Ostatnicky,
Emanuel Pfitzner,
Georg Ulrich,
Arne Hoehl,
Sonka Reimers,
Zbynek Soban,
Thomas Metzger,
Helena Reichlova,
Vít Novák,
Richard Campion,
Joachim Heberle,
Peter Wadley,
Kevin Edmonds,
Ollie Amin,
Jas Chauhan,
Sarnjeet Dhesi,
Francesco Maccherozzi,
Ruben Otxoa,
Pierre Roy,
Kamil Olejnik,
Petr Němec,
Tomas Jungwirth,
Bernd Kaestner
, et al. (1 additional authors not shown)
Abstract:
Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferroma…
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Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism.
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Submitted 11 April, 2020;
originally announced April 2020.
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Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses
Authors:
Zdeněk Kašpar,
Miloslav Surýnek,
Jan Zubáč,
Filip Krizek,
Vít Novák,
Richard P. Campion,
Martin S. Wörnle,
Pietro Gambardella,
Xavier Marti,
Petr Němec,
K. W. Edmonds,
S. Reimers,
O. J. Amin,
F. Maccherozzi,
S. S. Dhesi,
Peter Wadley,
Jörg Wunderlich,
Kamil Olejník,
Tomáš Jungwirth
Abstract:
Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets,…
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Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets, the readout magnetoresistivity signals in simple antiferromagnetic films have been weak and the extension of the electrical reorientation mechanism to optics has not been achieved. Here we report reversible and reproducible quenching of an antiferromagnetic CuMnAs film by either electrical or ultrashort optical pulses into nano-fragmented domain states. The resulting resistivity changes approach 20\% at room temperature, which is comparable to the giant magnetoresistance ratios in ferromagnetic multilayers. We also obtain a signal readout by optical reflectivity. The analog time-dependent switching and relaxation characteristics of our devices can mimic functionality of spiking neural network components.
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Submitted 24 June, 2021; v1 submitted 19 September, 2019;
originally announced September 2019.
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THz electrical writing speed in an antiferromagnetic memory
Authors:
K. Olejnik,
T. Seifert,
Z. Kaspar,
V. Novak,
P. Wadley,
R. P. Campion,
M. Baumgartner,
P. Gambardella,
P. Nemec,
J. Wunderlich,
J. Sinova,
M. Muller,
T. Kampfrath,
T. Jungwirth
Abstract:
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed…
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The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band.
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Submitted 24 October, 2017;
originally announced November 2017.
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Fast optical control of spin in semiconductor interfacial structures
Authors:
L. Nádvorník,
M. Surýnek,
K. Olejník,
V. Novák,
J. Wunderlich,
F. Trojánek,
T. Jungwirth,
P. Němec
Abstract:
We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations origi…
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We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system.
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Submitted 30 May, 2017;
originally announced May 2017.
