A Packaging Method for ALPIDE Integration Enabling Flexible and Low-Material-Budget Designs
Authors:
D. Novel,
A. Lega,
T. Facchinelli,
R. Iuppa,
S. Beolé,
P. Bellutti
Abstract:
This work presents a novel solution for the packaging of ALPIDE chips that facilitates non-planar assembly with a minimal material budget. This solution represents a technological advancement based on methodologies developed for the ALICE ITS1 and the STAR tracker two decades ago. The core of this approach involves the use of flexible cables composed of aluminum and polyimide, with thicknesses on…
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This work presents a novel solution for the packaging of ALPIDE chips that facilitates non-planar assembly with a minimal material budget. This solution represents a technological advancement based on methodologies developed for the ALICE ITS1 and the STAR tracker two decades ago. The core of this approach involves the use of flexible cables composed of aluminum and polyimide, with thicknesses on the order of tens of micrometers. These cables are connected to the sensors using single-point Tape Automated Bonding (spTAB), which replaces the traditional wire bonding technique that is suboptimal for curved integrations. The spTAB bonding is achieved by creating openings in the polyimide layer, allowing aluminum wires to remain free-standing, which are then connected to the sensor using pressure and ultrasonic energy. Extending this concept, we have applied this approach to entire printed circuit boards (PCBs), resulting in a fully flexible packaging solution maintaining an ultra-low material budget. This work introduces a prototype utilizing this method to bond an ALPIDE chip, proposing it as a viable option for future designs necessitating flexible packaging for both the chip and associated electronics. The overall workflow, comprising microfabrication and assembly, is carried out at the Fondazione Bruno Kessler and INFN TIFPA laboratories and will be detailed to elucidate our procedures and demonstrate the applicability of our solution in future experimental setups. The proposed packaging features a flexible PCB constructed from three stacked layers, each containing 20 $μ$m thick aluminum features and a 25 $μ$m thick polyimide substrate. These layers include a ground layer, a signal layer (encompassing both digital and analog signals), and a local bonding layer (which substitutes wire bonding).
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Submitted 14 March, 2025;
originally announced March 2025.
Plasma-Based Etching Approach for GEM Detector Microfabrication at FBK for X-ray polarimetry in space
Authors:
A. Lega,
D. Novel,
T. Facchinelli,
C. Sgro',
L. Baldini,
M. Minuti,
M. Boscardin,
G. Pepponi,
R. Iuppa,
R. Hall-Wilton,
L. Latronico
Abstract:
Gas Electron Multiplier (GEM) detectors are crucial for enabling high-resolution X-ray polarisation of astrophysical sources when coupled to custom pixel readout ASIC in Gas Pixel Detectors (GPD), as in the Imaging X-ray Polarimetry Explorer (IXPE), the Polarlight cubesat pathfinder and the PFA telescope onboard the future large enhanced X-ray Timing and Polarimetry (eXTP) Chinese mission. The R&D…
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Gas Electron Multiplier (GEM) detectors are crucial for enabling high-resolution X-ray polarisation of astrophysical sources when coupled to custom pixel readout ASIC in Gas Pixel Detectors (GPD), as in the Imaging X-ray Polarimetry Explorer (IXPE), the Polarlight cubesat pathfinder and the PFA telescope onboard the future large enhanced X-ray Timing and Polarimetry (eXTP) Chinese mission. The R&D efforts of the IXPE collaboration have resulted in mature GPD technology. However, limitations in the classical wet-etch or laser-drilled fabrication process of GEMs motivated our exploration of alternative methods. This work focuses on investigating a plasma-based etching approach for fabricating GEM patterns at Fondazione Bruno Kessler (FBK). The objective is to improve the aspect ratio of the GEM holes, to mitigate the charging of the GEM dielectric which generates rate-dependent gain changes. Unlike the traditional wet-etch process, Reactive Ion Etching (RIE) enables more vertical etching profiles and thus better aspect ratios. Moreover, the RIE process promises to overcome non-uniformities in the GEM hole patterns which are believed to cause systemic effects in the azimuthal response of GPDs equipped with either laser-drilled or wet-etch GEMs. We present a GEM geometry with 20 micrometers in diameter and 50 micrometers pitch, accompanied by extensive characterisation (SEM and PFIB) of the structural features and aspect ratios. The collaboration with INFN Pisa and Turin enabled us to compare the electrical properties of these detectors and test their performance in their use as electron multipliers in GPDs. Although this R&D work is in its initial stages, it holds promise for enhancing the sensitivity of the IXPE mission in X-ray polarimetry measurements through GEM pattern with more vertical hole profiles.
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Submitted 13 February, 2024; v1 submitted 12 December, 2023;
originally announced December 2023.
