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Nanoscale ferroelectric programming of van der Waals heterostructures
Authors:
Dengyu Yang,
Qingrui Cao,
Erin Akyuz,
John Hayden,
Josh Nordlander,
Muqing Yu,
Ranjani Ramachandran,
Patrick Irvin,
Jon-Paul Maria,
Benjamin M. Hunt,
Jeremy Levy
Abstract:
The ability to create superlattices in van der Waals (vdW) heterostructures via moiré interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide ra…
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The ability to create superlattices in van der Waals (vdW) heterostructures via moiré interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide range of periodic structures. Here, we describe a top-down approach to engineering nanoscale potentials in vdW layers using a buried programmable ferroelectric layer. Ultra-low-voltage electron beam lithography (ULV-EBL) is used to program ferroelectric domains in a ferroelectric Al_{1-x}B_{x}N thin film through a graphene/hexagonal boron nitride (hBN) heterostructure that is transferred on top. We demonstrate ferroelectric field effects by creating a lateral p-n junction, and demonstrate spatial resolution down to 35 nm, limited by the resolution of our scanned probe characterization methods. This innovative, resist-free patterning method is predicted to achieve 10 nm resolution and enable arbitrary programming of vdW layers, opening a pathway to create new phases that are inaccessible by moiré techniques. The ability to "paint" different phases of matter on a single vdW "canvas" provides a wealth of new electronic and photonic functionalities.
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Submitted 17 July, 2024;
originally announced July 2024.
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Single-peak and narrow-band mid-infrared thermal emitters driven by mirror-coupled plasmonic quasi-BIC metasurfaces
Authors:
Sen Yang,
Mingze He,
Chuchuan Hong,
Josh Nordlander,
Jon-Paul Maria,
Joshua D. Caldwell,
Justus C. Ndukaife
Abstract:
Wavelength-selective thermal emitters (WS-EMs) hold considerable appeal due to the scarcity of cost-effective, narrow-band sources in the mid-to-long-wave infrared spectrum. WS-EMs achieved via dielectric materials typically exhibit thermal emission peaks with high quality factors (Q factors), but their optical responses are prone to temperature fluctuations. Metallic EMs, on the other hand, show…
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Wavelength-selective thermal emitters (WS-EMs) hold considerable appeal due to the scarcity of cost-effective, narrow-band sources in the mid-to-long-wave infrared spectrum. WS-EMs achieved via dielectric materials typically exhibit thermal emission peaks with high quality factors (Q factors), but their optical responses are prone to temperature fluctuations. Metallic EMs, on the other hand, show negligible drifts with temperature changes, but their Q factors usually hover around 10. In this study, we introduce and experimentally verify a novel EM grounded in plasmonic quasi-bound states in the continuum (BICs) within a mirror-coupled system. Our design numerically delivers an ultra-narrowband single peak with a Q factor of approximately 64, and near-unity absorptance that can be freely tuned within an expansive band of more than 10 μm. By introducing air slots symmetrically, the Q factor can be further augmented to around 100. Multipolar analysis and phase diagrams are presented to elucidate the operational principle. Importantly, our infrared spectral measurements affirm the remarkable resilience of our designs' resonance frequency in the face of temperature fluctuations over 300 degrees Celsius. Additionally, we develop an effective impedance model based on the optical nanoantenna theory to understand how further tuning of the emission properties is achieved through precise engineering of the slot. This research thus heralds the potential of applying plasmonic quasi-BICs in designing ultra-narrowband, temperature-stable thermal emitters in mid-infrared. Moreover, such a concept may be adaptable to other frequency ranges, such as near-infrared, Terahertz, and Gigahertz.
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Submitted 18 October, 2023;
originally announced October 2023.
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Nonlinear optical diode effect in a magnetic Weyl semimetal
Authors:
Christian Tzschaschel,
Jian-Xiang Qiu,
Xue-Jian Gao,
Hou-Chen Li,
Chunyu Guo,
Hung-Yu Yang,
Cheng-Ping Zhang,
Ying-Ming Xie,
Yu-Fei Liu,
Anyuan Gao,
Damien Bérubé,
Thao Dinh,
Sheng-Chin Ho,
Yuqiang Fang,
Fuqiang Huang,
Johanna Nordlander,
Qiong Ma,
Fazel Tafti,
Philip J. W. Moll,
Kam Tuen Law,
Su-Yang Xu
Abstract:
Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimeta…
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Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We show demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light.
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Submitted 8 April, 2024; v1 submitted 28 July, 2023;
originally announced July 2023.
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Long-lived modulation of plasmonic absorption by ballistic thermal injection
Authors:
John A. Tomko,
Evan L. Runnerstrom,
Yi-Siang Wang,
Joshua R. Nolen,
David H. Olson,
Kyle P. Kelley,
Angela Cleri,
Josh Nordlander,
Joshua D. Caldwell,
Oleg V. Prezhdo,
Jon-Paul Maria,
Patrick E. Hopkins
Abstract:
Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast pl…
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Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast plasmonic measurements that provide a direct measure of electronic distributions, both spatially and temporally, following optical excitation of a metal-semiconductor heterostructure. For the first time, we explicitly show that in cases of strong non-equilibrium, a novel energy transduction mechanism arises at the metal/semiconductor interface. We find that hot electrons in the metal contact transfer their energy to pre-existing electrons in the semiconductor, without transfer of charge. These experimental results findings are well-supported by both rigorous multilayer optical modeling and first-principle, ab initio calculations.
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Submitted 20 May, 2020;
originally announced May 2020.
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Inversion-symmetry engineering in sub-unit-cell-layered oxide thin films
Authors:
J. Nordlander,
M. D. Rossell,
M. Campanini,
M. Fiebig,
M. Trassin
Abstract:
Inversion symmetry breaking is a ubiquitous concept in condensed-matter science. On the one hand, it is a prerequisite for many technologically relevant effects such as piezoelectricity, photovoltaic and nonlinear optical properties and spin-transport phenomena. On the other hand, it may determine abstract properties such as the electronic topology in quantum materials. Therefore, the creation of…
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Inversion symmetry breaking is a ubiquitous concept in condensed-matter science. On the one hand, it is a prerequisite for many technologically relevant effects such as piezoelectricity, photovoltaic and nonlinear optical properties and spin-transport phenomena. On the other hand, it may determine abstract properties such as the electronic topology in quantum materials. Therefore, the creation of materials where inversion symmetry can be turned on or off by design may be the ultimate route towards controlling parity-related phenomena and functionalities. Here, we engineer the symmetry of ultrathin epitaxial oxide films by sub-unit-cell growth control. We reversibly activate and deactivate inversion symmetry in the layered hexagonal manganites, h-RMnO$_3$ with R = Y, Er, Tb. While an odd number of half-unit-cell layers exhibits a breaking of inversion symmetry through its arrangement of MnO$_5$ bipyramids, an even number of such half-unit-cell layers takes on a centrosymmetric structure. Here we control the resulting symmetry by tracking the growth in situ via optical second-harmonic generation. We furthermore demonstrate that our symmetry engineering works independent of the choice of R and even in heterostructures mixing constituents with different R in a two-dimensional growth mode. Symmetry engineering on the atomic level thus suggests a new platform for the controlled activation and deactivation of symmetry-governed functionalities in oxide-electronic epitaxial thin films.
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Submitted 18 May, 2020;
originally announced May 2020.
