-
Epitaxial high-K AlBN barrier GaN HEMTs
Authors:
Chandrashekhar Savant,
Thai-Son Nguyen,
Kazuki Nomoto,
Saurabh Vishwakarma,
Siyuan Ma,
Akshey Dhar,
Yu-Hsin Chen,
Joseph Casamento,
David J. Smith,
Huili Grace Xing,
Debdeep Jena
Abstract:
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities of more than 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of 0.14 S/mm.…
▽ More
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities of more than 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of 0.14 S/mm. Transistor performance in this preliminary realization is limited by the contact resistance. Capacitance-voltage measurements reveal that introducing 7 % B in the epitaxial AlBN barrier on GaN boosts the relative dielectric constant of AlBN to 16, higher than the AlN dielectric constant of 9. Epitaxial high-K barrier AlBN/GaN HEMTs can thus extend performance beyond the capabilities of current GaN transistors.
△ Less
Submitted 26 February, 2025;
originally announced February 2025.
-
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
Authors:
J. Casamento,
K. Nomoto,
T. S. Nguyen,
H. Lee,
C. Savant,
L. Li,
A. Hickman,
T. Maeda,
J. Encomendero,
V. Gund,
A. Lal,
J. C. M. Hwang,
H. G. Xing,
D. Jena
Abstract:
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high…
▽ More
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics.
△ Less
Submitted 27 February, 2023;
originally announced February 2023.
-
N-polar GaN p-n junction diodes with low ideality factors
Authors:
Kazuki Nomoto,
Huili Grace Xing,
Debdeep Jena,
YongJin Cho
Abstract:
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V and an ideality factor of 1.6. As the temperature increases to 200 C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley-…
▽ More
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V and an ideality factor of 1.6. As the temperature increases to 200 C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley-Read-Hall recombination times of 0.32-0.46 ns are estimated. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level and acceptor-related luminescence is greatly suppressed. A relatively high reverse breakdown field of 2.4 MV/cm without field-plates is achieved. This work indicates that the quality of N-polar GaN diodes is now approaching to that of their state-of-the-art Ga-polar counterparts.
△ Less
Submitted 4 May, 2022; v1 submitted 24 April, 2022;
originally announced April 2022.
-
Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric
Authors:
Joseph Casamento,
Hyunjea Lee,
Takuya Maeda,
Ved Gund,
Kazuki Nomoto,
Len van Deurzen,
Amit Lal,
Huili,
Xing,
Debdeep Jena
Abstract:
Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($ε_r$) values relative to AlN. $ε_r$ values of ~17 to 21 for Sc contents of 17 to 25% (x=0.17 to 0.25) measured electrically by capacitance-voltage (CV) measurements at 500 kHz frequency indicate Sc$_x$Al$_{1-x}$N has the largest relative dielectric…
▽ More
Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($ε_r$) values relative to AlN. $ε_r$ values of ~17 to 21 for Sc contents of 17 to 25% (x=0.17 to 0.25) measured electrically by capacitance-voltage (CV) measurements at 500 kHz frequency indicate Sc$_x$Al$_{1-x}$N has the largest relative dielectric permittivity of any existing nitride material. This points toward the usage of Sc$_x$Al$_{1-x}$N as potential epitaxial, single-crystalline dielectric material that can be deposited in situ on GaN and AlN electronic and photonic devices for enhanced performance.
△ Less
Submitted 27 October, 2021;
originally announced October 2021.
-
Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures
Authors:
Joseph Casamento,
Ved Gund,
Hyunjea Lee,
Kazuki Nomoto,
Takuya Maeda,
Benyamin Davaji,
Mohammad Javad Asadi,
John Wright,
Yu-Tsun Shao,
David A. Muller,
Amit Lal,
Huili,
Xing,
Debdeep Jena
Abstract:
Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity. Pulsed current-voltage measurements confirm stable and repeatable polarization switching in such ferroelectric/semiconductor structures at several measurement c…
▽ More
Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity. Pulsed current-voltage measurements confirm stable and repeatable polarization switching in such ferroelectric/semiconductor structures at several measurement conditions, and in multiple samples. The measured coercive field values are Ec~0.7 MV/cm at room temperature, with remnant polarization Pr~10 μC/cm2 for ~100 nm thick ScAlN layers. These values are substantially lower than comparable ScAlN control layers deposited by sputtering. Importantly, the coercive field of MBE ScAlN is smaller than the critical breakdown field of GaN, offering the potential for low voltage ferroelectric switching. The low coercive field ferroelectricity of ScAlN on GaN heralds the possibility of new forms of electronic and photonic devices with epitaxially integrated ferroelectric/semiconductor heterostructures that take advantage of the GaN electronic and photonic semiconductor platform, where the underlying semiconductors themselves exhibit spontaneous and piezoelectric polarization.
△ Less
Submitted 20 May, 2021;
originally announced May 2021.
-
Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current in $β$-Ga$_{2}$O$_{3}$
Authors:
Wenshen Li,
Kazuki Nomoto,
Debdeep Jena,
Huili Grace Xing
Abstract:
The reverse leakage current through a Schottky barrier transitions from a thermionic-emission dominated regime to a barrier-tunneling dominated regime as the surface electric field increases. In this study, we evaluate such transition electric field ($E_{\rm T}$) in $β$-Ga$_{2}$O$_{3}$ using a numerical reverse leakage model. $E_{\rm T}$ is found to have very weak dependence on the doping concentr…
▽ More
The reverse leakage current through a Schottky barrier transitions from a thermionic-emission dominated regime to a barrier-tunneling dominated regime as the surface electric field increases. In this study, we evaluate such transition electric field ($E_{\rm T}$) in $β$-Ga$_{2}$O$_{3}$ using a numerical reverse leakage model. $E_{\rm T}$ is found to have very weak dependence on the doping concentration and barrier height, thus a near-universal temperature dependence suffices and is given by a simple empirical expression in Ga$_{2}$O$_{3}$. With the help of a field-plate design, we observed experimentally in Ga$_{2}$O$_{3}$ Schottky barrier diodes a near-ideal bulk reverse leakage characteristics, which matches well with our numerical model and confirms the presence of the transition region. Near the transition electric field, both thermionic emission and barrier tunneling should be considered. The study provides important guidance toward accurate design and modeling of ideal reverse leakage characteristics in $β$-Ga$_{2}$O$_{3}$ Schottky barrier diodes.
△ Less
Submitted 17 August, 2020;
originally announced August 2020.
-
Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy
Authors:
YongJin Cho,
Shyam Bharadwaj,
Zongyang Hu,
Kazuki Nomoto,
Uwe Jahn,
Huili Grace Xing,
Debdeep Jena
Abstract:
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam epitaxy. The (In,Ga)N MQW active regions overgrown on the p+-GaN show chemically abrupt and sharp interfaces in a wide range of compositions and are seen to have hi…
▽ More
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam epitaxy. The (In,Ga)N MQW active regions overgrown on the p+-GaN show chemically abrupt and sharp interfaces in a wide range of compositions and are seen to have high structural and optical properties as verified by X-ray diffraction and spatially resolved cathodoluminescence measurements. The processed LEDs reveal clear rectifying behavior with a low contact and buried tunnel junction resistivity. By virtue of the top n+-GaN layer with a low resistance, excellent current spreading in the LEDs is observed at low currents in this device structure. A few of new device possibilities based on this unique design are discussed.
△ Less
Submitted 18 December, 2018;
originally announced December 2018.
-
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
Authors:
Samuel James Bader,
Reet Chaudhuri,
Kazuki Nomoto,
Austin Hickman,
Zhen Chen,
Han Wui Then,
David A. Muller,
Huili Grace Xing,
Debdeep Jena
Abstract:
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-…
▽ More
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-current (10 mA/mm) and on-off modulation (four orders) for the GaN/AlN wide-bandgap p-FET structure. A compact analytical pFET model is derived, and the results are benchmarked against the various alternatives in the literature, clarifying the heterostructure trade-offs to enable integrated wide-bandgap CMOS for next-generation compact high-power devices.
△ Less
Submitted 18 October, 2018; v1 submitted 7 September, 2018;
originally announced September 2018.
-
Astrophysical Particle Simulations on Heterogeneous CPU-GPU Systems
Authors:
Naohito Nakasato,
Go Ogiya,
Yohei Miki,
Masao Mori,
Ken'ichi Nomoto
Abstract:
A heterogeneous CPU-GPU node is getting popular in HPC clusters. We need to rethink algorithms and optimization techniques for such system depending on the relative performance of CPU vs. GPU. In this paper, we report a performance optimized particle simulation code "OTOO", that is based on the octree method, for heterogenous systems. Main applications of OTOO are astrophysical simulations such as…
▽ More
A heterogeneous CPU-GPU node is getting popular in HPC clusters. We need to rethink algorithms and optimization techniques for such system depending on the relative performance of CPU vs. GPU. In this paper, we report a performance optimized particle simulation code "OTOO", that is based on the octree method, for heterogenous systems. Main applications of OTOO are astrophysical simulations such as N-body models and the evolution of a violent merger of stars. We propose optimal task split between CPU and GPU where GPU is only used to compute the calculation of the particle force. Also, we describe optimization techniques such as control of the force accuracy, vectorized tree walk, and work partitioning among multiple GPUs. We used OTOO for modeling a merger of two white dwarf stars and found that OTOO is powerful and practical to simulate the fate of the process.
△ Less
Submitted 6 June, 2012;
originally announced June 2012.
