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Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO$_{2}$-based devices
Authors:
C. Ferreyra,
M. Badillo,
M. J. Sánchez,
M. Acuautla,
B. Noheda,
D. Rubi
Abstract:
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at ferroelectric/metal interfaces -- that control the device resistance. Here, we unveil the coexistence of multiple memristive mechanisms in Pt/Ca:HfO…
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Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at ferroelectric/metal interfaces -- that control the device resistance. Here, we unveil the coexistence of multiple memristive mechanisms in Pt/Ca:HfO$_2$/Pt devices fabricated on silicon by a simple and effective low-toxicity chemical solution method. Depending on the fabrication conditions, either dielectric or ferroelectric devices are obtained, each one presenting a distinct memristive response. The devices are forming-free and can sustain ferroelectric switching and memristive behavior simultaneously. Aided by numerical simulations, we describe this behavior as a competition of different mechanisms, including the effect of the ferroelectric polarization on Schottky interfaces and oxygen vacancy electromigration. Finally, we propose a simple learning algorithm for time-series recognition, designed to take advantage of the resistance relaxations present in the case of the ferroelectric devices.
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Submitted 17 May, 2024;
originally announced May 2024.
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Multi-mem behavior at reduced voltages in La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ perovskite modified with Sm:CeO$_2$
Authors:
Wilson Román Acevedo,
Myriam H. Aguirre,
Beatriz Noheda,
Diego Rubi
Abstract:
Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices (which can change their capacitance between different non-volatile states upon the application of electrical stimulation) can significantly reduce…
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Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices (which can change their capacitance between different non-volatile states upon the application of electrical stimulation) can significantly reduce the energy consumption of bioinspired circuitry. In the present work, we study the multimem (memristive and memcapacitive) behavior of devices based on thin films of the topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) perovskite modified with Sm:Ce$O_2$ (SCO), grown on Nb:SrTiO$_{3}$ with (001) and (110) out of plane orientations. Either the self assembling at the nanoscale of both LSMCO and SCO phases or the doping with Ce(Sm) of the LSMCO perovskite were observed for different fabrication conditions and out of plane orientations. The impact of these changes on the device electrical behavior was determined. The optimum devices resulted those with (110) orientation and Ce(Sm) doping the perovskite. These devices displayed a multimem behavior with robust memcapacitance and significantly lower operation voltages (especially the RESET voltage) in comparison with devices based on pristine LSMCO. In addition, they were able to endure electrical cycling (and the concomitant perovskite topotactic redox transition between oxidized and reduced phases) without suffering nanostructural or chemical changes. We link these properties to an enhanced perovskite reducibility upon Ce(Sm) doping. Our work contributes to increase the reliability of LSMCO based multimem systems and to reduce their operating voltages closer to the 1 V threshold, which are key issues for the development of nanodevices for neuromorphic or in memory computing.
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Submitted 22 April, 2024;
originally announced April 2024.
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Dynamics of Voltage Driven Self-Sustained Oscillations in NdNiO$_3$ Neuristors
Authors:
Upanya Khandelwal,
Qikai Guo,
Beatriz Noheda,
Pavan Nukala,
Saurabh Chandorkar
Abstract:
Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that show conduction mechanisms that depend superlinearly with temperature can lead to negative differential resistance (NDR) regimes, which may further be engineered a…
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Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that show conduction mechanisms that depend superlinearly with temperature can lead to negative differential resistance (NDR) regimes, which may further be engineered as self-oscillators. Thermal runaway, insulator to metal phase transitions (IMT) can lead to such superlinearity and are being extensively studied in systems such as TaO$_x$, NbO$_x$ and VO$_2$. However, ReNiO$_3$ systems that offer large tunability in metal-insulator transition temperatures are less explored so far. Here we demonstrate all-or-nothing neuron-like self-oscillations at MHz frequency and low temperatures on thin films of NdNiO$_3$, a model charge transfer insulator, and their frequency coding behavior. We study the temperature dependence of NDR and show that it vanishes even at temperatures below the IMT temperature. We also show that the threshold voltages scale with device size and that a simple electrothermal device model captures all these salient features. In contrast to existing models, our model correctly predicts the independence of oscillation amplitude with the applied voltage, offering crucial insights about the nature of fixed points in the NDR region, and the dynamics of non-linear oscillations about them. KEYWORDS: NDR, oscillations, thermal model.
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Submitted 15 March, 2023;
originally announced March 2023.
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Ferroelastic domain walls in BiFeO$_3$ as memristive networks
Authors:
Jan Rieck,
Davide Cipollini,
Mart Salverda,
Cynthia P. Quinteros,
Lambert R. B. Schomaker,
Beatriz Noheda
Abstract:
Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from w…
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Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from wall to wall through the dense network of as-grown DWs in BFO thin films. Electric field cycling at different points of the network, performed locally by conducting atomic force microscope (cAFM), induces resistive switching selectively at the DWs, both for vertical (single wall) and lateral (wall-to-wall) conduction. These findings are the first step towards investigating DWs as memristive networks for information processing and in-materio computing.
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Submitted 6 July, 2022;
originally announced July 2022.
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Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$
Authors:
W. Román Acevedo,
M. H. Aguirre,
C. Ferreyra,
M. J. Sánchez,
M. Rengifo,
C. A. M. van den Bosch,
A. Aguadero,
B. Noheda,
D. Rubi
Abstract:
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. Ho…
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Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices
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Submitted 7 October, 2021;
originally announced October 2021.
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Ferroelectric PbZr$_{1-x}$Ti$_x$O$_3$ by ethylene glycol-based chemical solution synthesis
Authors:
Ewout van der Veer,
Mónica Acuautla,
Beatriz Noheda
Abstract:
We have investigated a water-stable sol-gel method based on ethylene glycol as a solvent and bridging ligand for the synthesis of ferroelectric lead zirconate titanate in bulk and thin film forms. This method offers lower toxicity of the solvent, higher stability towards atmospheric moisture and a simplified synthetic procedure compared to traditional sol-gel methods. Ceramic pellets of Nb-doped l…
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We have investigated a water-stable sol-gel method based on ethylene glycol as a solvent and bridging ligand for the synthesis of ferroelectric lead zirconate titanate in bulk and thin film forms. This method offers lower toxicity of the solvent, higher stability towards atmospheric moisture and a simplified synthetic procedure compared to traditional sol-gel methods. Ceramic pellets of Nb-doped lead zirconate titanate (PNZT) in the rhombohedral phase were produced with high density and good piezoelectric properties, comparable to those reported in the literature and those found in commercial piezoelectric elements. In addition, a nine-layer thin film stack was fabricated from the same sol by spin coating onto platinized silicon substrates. The films were crack-free and showed a dense perovskite grain structure with a weak (111) orientation. Piezoelectric measurements of the film showed a piezoelectric coefficient comparable to literature values and good stability towards fatigue.
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Submitted 22 July, 2020;
originally announced July 2020.
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On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
Authors:
C. Ferreyra,
M. Rengifo,
M. J. Sánchez,
A. S. Everhard,
B. Noheda,
D. Rubi
Abstract:
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen v…
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Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen vacancies, with the depolarizing field playing a fundamental role in the latter. We simulate our experimental results with a phenomenological model that includes both effects and we reproduce several non-trivial features of the electrical response, including resistance relaxations observed after external poling. Besides providing insight into the underlying physics of these complex devices, our work suggests that it is possible to combine non-volatile and volatile resistive changes in single ferroelectric memristors, an issue that could be useful for the development of neuromorphic devices.
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Submitted 18 June, 2020;
originally announced June 2020.
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Electrical and acoustic self-oscillations in an epitaxial oxide for neuromorphic applications
Authors:
M. Salverda,
B. Noheda
Abstract:
Developing materials that can lead to compact versions of artificial neurons (neuristors) and synapses (memristors) is the main aspiration of the nascent neuromorphic materials research field. Oscillating circuits are interesting as neuristors, emulating the firing of action potentials. We present room-temperature self-oscillating devices fabricated from epitaxial thin films of semiconducting TbMn…
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Developing materials that can lead to compact versions of artificial neurons (neuristors) and synapses (memristors) is the main aspiration of the nascent neuromorphic materials research field. Oscillating circuits are interesting as neuristors, emulating the firing of action potentials. We present room-temperature self-oscillating devices fabricated from epitaxial thin films of semiconducting TbMnO3. We show that these electrical oscillations induce concomitant mechanical oscillations that produce audible sound waves, offering an additional degree of freedom to interface with other devices. The intrinsic nature of the mechanism governing the oscillations gives rise to a high degree of control and repeatability. Obtaining such properties in an epitaxial perovskite oxide, opens the way towards combining self-oscillating properties with those of other piezoelectric, ferroelectric, or magnetic perovskite oxides to achieve hybrid neuristor-memristor functionality in compact heterostuctures.
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Submitted 7 May, 2020; v1 submitted 21 April, 2020;
originally announced April 2020.
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Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers
Authors:
Jordi Antoja-Lleonart,
Silang Zhou,
Kit de Hond,
Gertjan Koster,
Guus Rijnders,
Beatriz Noheda
Abstract:
Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-l…
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Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers.
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Submitted 6 April, 2020;
originally announced April 2020.
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Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers
Authors:
Yingfen Wei,
Sylvia Matzen,
Guillaume Agnus,
Mart Salverda,
Pavan Nukala,
Thomas Maroutian,
Qihong Chen,
Jianting Ye,
Philippe Lecoeur,
Beatriz Noheda
Abstract:
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing great potential for device miniaturization down to the nanoscale. Here we utilize ferroelectric Hf0.5Zr0.5O2 (HZO) with thickness of only 2 nm, epitaxially grown on…
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A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing great potential for device miniaturization down to the nanoscale. Here we utilize ferroelectric Hf0.5Zr0.5O2 (HZO) with thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a large band-gap insulating barrier integrated in MFTJs with cobalt top electrodes. As previously reported for other MFTJs with similar electrodes, the tunneling magnetoresistance (TMR) can be tuned and its sign can even be reversed by the bias voltage across the junction. We demonstrate four non-volatile resistance states generated by magnetic and electric field switching with high reproducibility in this system.
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Submitted 8 February, 2019;
originally announced February 2019.
