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Radiation-Induced Degradation Mechanism of X-ray SOI Pixel Sensors with Pinned Depleted Diode Structure
Authors:
Kouichi Hagino,
Masatoshi Kitajima,
Takayoshi Kohmura,
Ikuo Kurachi,
Takeshi G. Tsuru,
Masataka Yukumoto,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Takaaki Tanaka
Abstract:
The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good timing resolution of a few tens of $μ$s. However, it had a major issue with its radiation tolerance to the total ionizing dose (TID) effect because of its thic…
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The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good timing resolution of a few tens of $μ$s. However, it had a major issue with its radiation tolerance to the total ionizing dose (TID) effect because of its thick buried oxide layer due to the SOI structure. Although new device structures introducing pinned depleted diodes dramatically improved radiation tolerance, it remained unknown how radiation effects degrade the sensor performance. Thus, this paper reports the results of a study of the degradation mechanism of XRPIX due to radiation using device simulations. In particular, mechanisms of increases in dark current and readout noise are investigated by simulation, taking into account the positive charge accumulation in the oxide layer and the increase in the surface recombination velocity at the interface between the sensor layer and the oxide layer. As a result, it is found that the depletion of the buried p-well at the interface increases the dark current, and that the increase in the sense-node capacitance increases the readout noise.
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Submitted 14 June, 2023;
originally announced June 2023.
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Single Event Tolerance of X-ray SOI Pixel Sensors
Authors:
Kouichi Hagino,
Mitsuki Hayashida,
Takayoshi Kohmura,
Toshiki Doi,
Shun Tsunomachi,
Masatoshi Kitajima,
Takeshi G. Tsuru,
Hiroyuki Uchida,
Kazuho Kayama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Masataka Yukumoto,
Kira Mieda,
Syuto Yonemura,
Tatsunori Ishida,
Takaaki Tanaka,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cr…
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We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.
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Submitted 10 October, 2022;
originally announced October 2022.
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X-ray Radiation Damage Effects on Double-SOI Pixel Detectors for the Future Astronomical Satellite "FORCE"
Authors:
Masatoshi Kitajima,
Kouichi Hagino,
Takayoshi Kohmura,
Mitsuki Hayashida,
Kenji Oono,
Kousuke Negishi,
Keigo Yarita,
Toshiki Doi,
Shun Tsunomachi,
Takeshi G. Tsuru,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Takaaki Tanaka,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Masataka Yukumoto,
Kira Mieda,
Syuto Yonemura,
Tatsunori Ishida,
Yasuo Arai,
Ikuo Kurachi
Abstract:
We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as…
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We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as cosmic rays. From previous studies, positive charges trapped in the SiO2 insulator are known to cause the degradation of the detector performance. To improve the radiation hardness, we developed XRPIX equipped with Double-SOI (D-SOI) structure, introducing an additional silicon layer in the SiO2 insulator. This structure is aimed at compensating for the effect of the trapped positive charges. Although the radiation hardness to cosmic rays of the D-SOI detectors has been evaluated, the radiation effect due to the X-ray irradiation has not been evaluated. Then, we conduct an X-ray irradiation experiment using an X-ray generator with a total dose of 10 krad at the SiO2 insulator, equivalent to 7 years in orbit. As a result of this experiment, the energy resolution in full-width half maximum for the 5.9 keV X-ray degrades by 17.8 $\pm$ 2.8% and the dark current increases by 89 $\pm$ 13%. We also investigate the physical mechanism of the increase in the dark current due to X-ray irradiation using TCAD simulation. It is found that the increase in the dark current can be explained by the increase in the interface state density at the Si/SiO2 interface.
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Submitted 26 May, 2022;
originally announced May 2022.
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High-power laser experiment forming a supercritical collisionless shock in a magnetized uniform plasma at rest
Authors:
Ryo Yamazaki,
S. Matsukiyo,
T. Morita,
S. J. Tanaka,
T. Umeda,
K. Aihara,
M. Edamoto,
S. Egashira,
R. Hatsuyama,
T. Higuchi,
T. Hihara,
Y. Horie,
M. Hoshino,
A. Ishii,
N. Ishizaka,
Y. Itadani,
T. Izumi,
S. Kambayashi,
S. Kakuchi,
N. Katsuki,
R. Kawamura,
Y. Kawamura,
S. Kisaka,
T. Kojima,
A. Konuma
, et al. (29 additional authors not shown)
Abstract:
We present a new experimental method to generate quasi-perpendicular supercritical magnetized collisionless shocks. In our experiment, ambient nitrogen (N) plasma is at rest and well-magnetized, and it has uniform mass density. The plasma is pushed by laser-driven ablation aluminum (Al) plasma. Streaked optical pyrometry and spatially resolved laser collective Thomson scattering clarify structures…
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We present a new experimental method to generate quasi-perpendicular supercritical magnetized collisionless shocks. In our experiment, ambient nitrogen (N) plasma is at rest and well-magnetized, and it has uniform mass density. The plasma is pushed by laser-driven ablation aluminum (Al) plasma. Streaked optical pyrometry and spatially resolved laser collective Thomson scattering clarify structures of plasma density and temperatures, which are compared with one-dimensional particle-in-cell simulations. It is indicated that just after the laser irradiation, the Al plasma is magnetized by a self-generated Biermann battery field, and the plasma slaps the incident N plasma. The compressed external field in the N plasma reflects N ions, leading to counter-streaming magnetized N flows. Namely we identify the edge of the reflected N ions. Such interacting plasmas form a magnetized collisionless shock.
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Submitted 7 February, 2022; v1 submitted 19 January, 2022;
originally announced January 2022.
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Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure
Authors:
Mitsuki Hayashida,
Kouichi Hagino,
Takayoshi Kohmura,
Masatoshi Kitajima,
Keigo Yarita,
Kenji Oono,
Kousuke Negishi,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-…
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X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.
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Submitted 11 August, 2021;
originally announced August 2021.
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Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy
Authors:
Kouichi Hagino,
Keigo Yarita,
Kousuke Negishi,
Kenji Oono,
Mitsuki Hayashida,
Masatoshi Kitajima,
Takayoshi Kohmura,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Yuki Amano,
Ryota Kodama,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Masataka Yukumoto,
Takahiro Hida,
Yasuo Arai,
Ikuo Kurachi,
Tsuyoshi Hamano,
Hisashi Kitamura
Abstract:
The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the…
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The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.
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Submitted 16 July, 2020;
originally announced July 2020.
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Radiation hardness of a p-channel notch CCD developed for the X-ray CCD camera onboard the XRISM satellite
Authors:
Yoshiaki Kanemaru,
Jin Sato,
Koji Mori,
Hiroshi Nakajima,
Yusuke Nishioka,
Ayaki Takeda,
Kiyoshi Hayashida,
Hironori Matsumoto,
Junichi Iwagaki,
Koki Okazaki,
Kazunori Asakura,
Tomokage Yoneyama,
Hiroyuki Uchida,
Hiromichi Okon,
Takaaki Tanaka,
Takeshi G. Tsuru,
Hiroshi Tomida,
Takeo Shimoi,
Takayoshi Kohmura,
Kouichi Hagino,
Hiroshi Murakami,
Shogo B. Kobayashi,
Makoto Yamauchi,
Isamu Hatsukade,
Masayoshi Nobukawa
, et al. (8 additional authors not shown)
Abstract:
We report the radiation hardness of a p-channel CCD developed for the X-ray CCD camera onboard the XRISM satellite. This CCD has basically the same characteristics as the one used in the previous Hitomi satellite, but newly employs a notch structure of potential for signal charges by increasing the implant concentration in the channel. The new device was exposed up to approximately…
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We report the radiation hardness of a p-channel CCD developed for the X-ray CCD camera onboard the XRISM satellite. This CCD has basically the same characteristics as the one used in the previous Hitomi satellite, but newly employs a notch structure of potential for signal charges by increasing the implant concentration in the channel. The new device was exposed up to approximately $7.9 \times 10^{10} \mathrm{~protons~cm^{-2}}$ at 100 MeV. The charge transfer inefficiency was estimated as a function of proton fluence with an ${}^{55} \mathrm{Fe}$ source. A device without the notch structure was also examined for comparison. The result shows that the notch device has a significantly higher radiation hardness than those without the notch structure including the device adopted for Hitomi. This proves that the new CCD is radiation tolerant for space applications with a sufficient margin.
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Submitted 1 June, 2019;
originally announced June 2019.
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Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area
Authors:
Hideki Hayashi,
Takeshi Go Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Hideaki Matsumura,
Katsuhiro Tachibana,
Sodai Harada,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Ikuo Kurachi,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Takayoshi Kohmura,
Kouichi Hagino,
Kousuke Negishi,
Kenji Oono
, et al. (1 additional authors not shown)
Abstract:
We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processe…
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We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processed ``XRPIX5b'' with the largest imaging area of 21.9~mm $\times$ 13.8~mm in the XRPIX series. X-ray spectra are successfully obtained from all the pixels, and the readout noise is 46~e$^-$~(rms) in the frame readout mode. The gain variation was measured to be 1.2\%~(FWHM) among the pixels. We successfully obtain the X-ray image in the event-driven readout mode.
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Submitted 29 April, 2019;
originally announced April 2019.
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Performance of SOI Pixel Sensors Developed for X-ray Astronomy
Authors:
Takaaki Tanaka,
Takeshi Go Tsuru,
Hiroyuki Uchida,
Sodai Harada,
Tomoyuki Okuno,
Kazuho Kayama,
Yuki Amano,
Hideaki Matsumura,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Kohei Fukuda,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Takayoshi Kohmura,
Kouichi Hagino,
Kousuke Negishi
, et al. (2 additional authors not shown)
Abstract:
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithi…
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We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~μ{\rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $\sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{\rm mm} \times 13.8~{\rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 \times 384$ pixels with high uniformity.
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Submitted 14 December, 2018;
originally announced December 2018.
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X-ray response evaluation in subpixel level for X-ray SOI pixel detectors
Authors:
Kousuke Negishi,
Takayoshi Kohmura,
Kouichi Hagino,
Taku Kogiso,
Kenji Oono,
Keigo Yarita,
Akinori Sasaki,
Koki Tamasawa,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hideaki Matsumura,
Katsuhiro Tachibana,
Hideki Hayashi,
Sodai Harada,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Toshinobu Miyoshi,
Shunji Kishimoto,
Ikuo Kurachi
Abstract:
We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few $μ\rm s$ and has Correlated Double Sampling function to reduce e…
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We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few $μ\rm s$ and has Correlated Double Sampling function to reduce electric noises. The good time resolution enables the XRPIX to reduce Non X-ray Background in the high energy band above 10\,keV drastically by using anti-coincidence technique with active shield counters surrounding XRPIX. In order to increase the soft X-ray sensitivity, it is necessary to make the dead layer on the X-ray incident surface as thin as possible. Since XRPIX1b, which is a device at the initial stage of development, is a front-illuminated (FI) type of XRPIX, low energy X-ray photons are absorbed in the 8 $\rm μ$m thick circuit layer, lowering the sensitivity in the soft X-ray band. Therefore, we developed a back-illuminated (BI) device XRPIX2b, and confirmed high detection efficiency down to 2.6 keV, below which the efficiency is affected by the readout noise. In order to further improve the detection efficiency in the soft X-ray band, we developed a back-illuminated device XRPIX3b with lower readout noise. In this work, we irradiated 2--5 keV X-ray beam collimated to 4 $\rm μm φ$ to the sensor layer side of the XRPIX3b at 6 $\rm μm$ pitch. In this paper, we reported the uniformity of the relative detection efficiency, gain and energy resolution in the subpixel level for the first time. We also confirmed that the variation in the relative detection efficiency at the subpixel level reported by Matsumura et al. has improved.
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Submitted 25 October, 2018;
originally announced October 2018.
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Proton Radiation Damage Experiment for X-Ray SOI Pixel Detectors
Authors:
Keigo Yarita,
Takayoshi Kohmura,
Kouichi Hagino,
Taku Kogiso,
Kenji Oono,
Kousuke Negishi,
Koki Tamasawa,
Akinori Sasaki,
Satoshi Yoshiki,
Takeshi Go Tsuru,
Takaaki Tanaka,
Hideaki Matsumura,
Katsuhiro Tachibana,
Hideki Hayashi,
Sodai Harada,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Toshinobu Miyoshi,
Ikuo Kurachi,
Tsuyoshi Hamano
, et al. (1 additional authors not shown)
Abstract:
In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors…
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In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors called XRPIX based on silicon-on-insulator technology at HIMAC in National Institute of Radiological Sciences. We irradiated 6 MeV protons with a total dose of 0.5 krad, equivalent to 6 years irradiation in orbit. As a result, the gain increases by 0.2% and the energy resolution degrades by 0.5%. Finally we irradiated protons up to 20 krad and found that detector performance degraded significantly at 5 krad. With 5 krad irradiation corresponding to 60 years in orbit, the gain increases by 0.7% and the energy resolution worsens by 10%. By decomposing into noise components, we found that the increase of the circuit noise is dominant in the degradation of the energy resolution.
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Submitted 22 October, 2018;
originally announced October 2018.
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Kyoto's Event-Driven X-ray Astronomy SOI pixel sensor for the FORCE mission
Authors:
Takeshi G. Tsuru,
Hideki Hayashi,
Katsuhiro Tachibana,
Sodai Harada,
Hiroyuki Uchida,
Takaaki Tanaka,
Yasuo Arai,
Ikuo Kurachi,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Takayoshi Kohmura,
Kouichi Hagino,
Kenji Ohno,
Kohsuke Negishi,
Keigo Yarita,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Shunta Nakanishi,
Hiroki Kamehama
, et al. (1 additional authors not shown)
Abstract:
We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with…
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We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10~keV. Immediate readout of only those pixels hit by an X-ray is available by an event trigger output function implemented in each pixel with the time resolution higher than $10~{\rm μsec}$ (Event-Driven readout mode). It allows us to do fast timing observation and also reduces non-X-ray background dominating at a high X-ray energy band above 5--10~keV by adopting an anti-coincidence technique. In this paper, we introduce our latest results from the developments of the XRPIXs. (1) We successfully developed a 3-side buttable back-side illumination device with an imaging area size of 21.9~mm$\times$13.8~mm and an pixel size of $36~{\rm μm} \times 36~{\rm μm}$. The X-ray throughput with the device reaches higher than 0.57~kHz in the Event-Driven readout mode. (2) We developed a device using the double SOI structure and found that the structure improves the spectral performance in the Event-Driven readout mode by suppressing the capacitive coupling interference between the sensor and circuit layers. (3) We also developed a new device equipped with the Pinned Depleted Diode structure and confirmed that the structure reduces the dark current generated at the interface region between the sensor and the SiO$_2$ insulator layers. The device shows an energy resolution of 216~eV in FWHM at 6.4~keV in the Event-Driven readout mode.
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Submitted 29 July, 2018;
originally announced July 2018.
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Improving Charge-Collection Efficiency of Kyoto's SOI Pixel Sensors
Authors:
Hideaki Matsumura,
Takeshi Go Tsuru,
Takaaki Tanaka,
Ayaki Takeda,
Makoto Ito,
Syunichi Ohmura,
Yasuo Arai,
Koji Mori,
Yusuke Nishioka,
Ryota Takenaka,
Takayoshi Kohmura
Abstract:
We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~μ$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence systems. Their performance in imaging spectroscopy is comparable to that in the CCDs. A problem in our previous model was degradation of charge-collection efficiency (C…
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We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~μ$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence systems. Their performance in imaging spectroscopy is comparable to that in the CCDs. A problem in our previous model was degradation of charge-collection efficiency (CCE) at pixel borders. We measured the response in the sub-pixel scale, using finely collimated X-ray beams at $10~μ$mΦ$ at SPring-8, and investigated the non-uniformity of the CCE within a pixel. We found that the X-ray detection efficiency and CCE degrade in the sensor region under the pixel circuitry placed outside the buried p-wells (BPW). A 2D simulation of the electric fields shows that the isolated pixel-circuitry outside the BPW creates local minimums in the electric potentials at the interface between the sensor and buried oxide layers. Thus, a part of signal charge is trapped there and is not collected to the BPW. Based on this result, we modified the placement of the in-pixel circuitry so that the electric fields would converge toward the BPW. We confirmed that the CCE at pixel borders is successfully improved with the updated model.
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Submitted 1 September, 2015;
originally announced September 2015.
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Investigation of the Kyoto's X-ray Astronomical SOIPIXs with Double-SOI Wafer for Reduction of Cross-talks
Authors:
Shunichi Ohmura,
Takeshi Go Tsuru,
Takaaki Tanaka,
Ayaki Takeda,
Hideaki Matsumura,
Ito Makoto,
Shinya Nakashima,
Yasuo Arai,
Koji Mori,
Ryota Takenaka,
Yusuke Nishioka,
Takayoshi Kohmura,
Kouki Tamasawa
Abstract:
We have been developing X-ray SOIPIXs, "XRPIX", for future X-ray astronomy satellites. XRPIX is equipped with a function of "event-driven readout", which allows us to readout signal hit pixels only and realizes a high time resolution ($\sim10μ{\rm s}$). The current version of XRPIX suffers a problem that the readout noise in the event-driven readout mode is higher than that in the the frame readou…
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We have been developing X-ray SOIPIXs, "XRPIX", for future X-ray astronomy satellites. XRPIX is equipped with a function of "event-driven readout", which allows us to readout signal hit pixels only and realizes a high time resolution ($\sim10μ{\rm s}$). The current version of XRPIX suffers a problem that the readout noise in the event-driven readout mode is higher than that in the the frame readout mode, in which all the pixels are read out serially. Previous studies have clarified that the problem is caused by the cross-talks between buried P-wells (BPW) in the sensor layer and in-pixel circuits in the circuit layer. Thus, we developed new XRPIX having a Double SOI wafer (DSOI), which has an additional silicon layer (middle silicon) working as an electrical shield between the BPW and the in-pixel circuits. After adjusting the voltage applied to the middle silicon, we confirmed the reduction of the cross-talk by observing the analog waveform of the pixel circuit. We also successfully detected $^{241}$Am X-rays with XRPIX.
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Submitted 21 August, 2015;
originally announced August 2015.
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Study of the basic performance of the XRPIX for the future astronomical X-ray satellite
Authors:
Koki Tamasawa,
Takayoshi Kohmura,
Takahiro Konno,
Takeshi Go Tsuru,
Takaaki Tanaka,
Ayaki Takeda,
Hideaki Matsumura,
Koji Mori,
Yusuke Nishioka,
Ryota Takenaka
Abstract:
We have developed CMOS imaging sensor (XRPIX) using SOI (Silicon-On-Insulator) technology for the X-ray astronomical use. XRPIX(X-Ray soiPIXel) has advantage of a high time resolution, a high position resolution and an observation in a wide X-ray energy band with a thick depletion layer of over 200um.
However, the energy resolution of XRPIX is not as good as one of X-ray CCD. Therefore improveme…
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We have developed CMOS imaging sensor (XRPIX) using SOI (Silicon-On-Insulator) technology for the X-ray astronomical use. XRPIX(X-Ray soiPIXel) has advantage of a high time resolution, a high position resolution and an observation in a wide X-ray energy band with a thick depletion layer of over 200um.
However, the energy resolution of XRPIX is not as good as one of X-ray CCD. Therefore improvement of the the energy resolution is one of the most important development item of XRPIX. In order to evaluate the performance XRPIX more precisely, we have investigated on the temperature dependence of the basic performance, such as readout noise, leak current, gain and energy resolution, using two type of XRPIX, XRPIX1 and XRPIX2b_CZ.
In our study, we confirmed the readout noise, the leak current noise and the energy resolution clearly depended on the operating temperature of XRPIX. In addition, we divided the readout noise into the leak current noise and the circuit origin noise. As a result, we found that noise of the electronic circuitry origin was proportional to the square root of operating temperature.
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Submitted 24 July, 2015;
originally announced July 2015.
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Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor
Authors:
Takeshi G. Tsuru,
Hideaki Matsumura,
Ayaki Takeda,
Takaaki Tanaka,
Shinya Nakashima,
Yasuo Arai,
Koji Mori,
Ryota Takenaka,
Yusuke Nishioka,
Takayoshi Kohmura,
Takaki Hatsui,
Takashi Kameshima,
Kyosuke Ozaki,
Yoshiki Kohmura,
Tatsuya Wagai,
Dai Takei,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Hiroki Kamehama,
Sumeet Shrestha
Abstract:
We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A f…
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We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$α$ and K$β$. Moreover, we produced a fully depleted layer with a thickness of $500~{\rm μm}$. The event-driven readout mode has already been successfully demonstrated.
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Submitted 20 August, 2014;
originally announced August 2014.
