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Nonlinear Optical Microscopy of Semiconductor Metal-Nanocavities
Authors:
Riya Varghese,
Shambhavee Annurakshita,
Yaraslau Tamashevich,
Abhiroop Chellu,
Subhajit Bej,
Heikki Rekola,
Jari Lyytikainen,
Hanna Wahl,
Matias Schildt,
Ali Panahpour,
Tapio Niemi,
Marco Ornigotti,
Petri Karvinen,
Mircea Guina,
Teemu Hakkarainen,
Mikko J. Huttunen
Abstract:
We use second and third harmonic generation microscopy to investigate the nonlinear optical response of GaAs nanocavities embedded in a gold film and compare them to bare GaAs nanocavities. Our results reveal that the surrounding metallic environment significantly modifies both the intensity and spatial distribution of the nonlinear signals. When the harmonic wavelength is spectrally detuned from…
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We use second and third harmonic generation microscopy to investigate the nonlinear optical response of GaAs nanocavities embedded in a gold film and compare them to bare GaAs nanocavities. Our results reveal that the surrounding metallic environment significantly modifies both the intensity and spatial distribution of the nonlinear signals. When the harmonic wavelength is spectrally detuned from the nanocavity resonance, the effects due to the metallic environment start suppressing the SHG contrast. Numerical simulations confirm that at a 1060 nm pump wavelength, the SHG produced at 530 nm is suppressed due to the dominant plasmonic response of gold. Meanwhile, the THG produced at 353 nm, which coincides with the nanocavity resonance, enables high contrast imaging. Furthermore, by shifting the pump to 710 nm, aligning SHG at 356 nm with the nanocavity resonance, we recover strong SHG contrast, demonstrating a pathway to enhanced imaging of metal-semiconductor heterostructures.
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Submitted 4 April, 2025;
originally announced April 2025.
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Ultrafast modulation of guided-mode resonance in a nonlinear silicon nitride grating
Authors:
Subhajit Bej,
Nikolai Tkachenko,
Robert Fickler,
Tapio Niemi
Abstract:
Nonlinear optical interactions in nanostructures are subjects of both fundamental research and practical applications. The optical Kerr effect, a third-order nonlinear optical phenomenon, induces anisotropic changes in the refractive index of a material under intense laser illumination. This effect is inherently weak, limiting its practical use in free-space nanophotonics. In this work, we demonst…
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Nonlinear optical interactions in nanostructures are subjects of both fundamental research and practical applications. The optical Kerr effect, a third-order nonlinear optical phenomenon, induces anisotropic changes in the refractive index of a material under intense laser illumination. This effect is inherently weak, limiting its practical use in free-space nanophotonics. In this work, we demonstrate an enhancement of the optical Kerr effect by more than three orders of magnitude using guided-mode resonance in a dielectric diffraction grating with an overall thickness of less than 300 nm. Our study involves the design, fabrication, and measurement of the transmittance of a resonant silicon nitride crossed grating illuminated with short light pulses. We observe spectral resonance shifts with varying pulse power, leading to more than fifty percent modulation of the resonance magnitude and enabling transitions between `Off' and `On' states of transmission. We also demonstrate the capability of the grating for dynamic pulse shaping. The results presented here reveal promising directions for developing advanced all-optical devices based on free-space nanophotonics.
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Submitted 2 September, 2024; v1 submitted 20 August, 2024;
originally announced August 2024.
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Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities
Authors:
Abhiroop Chellu,
Subhajit Bej,
Hanna Wahl,
Hermann Kahle,
Topi Uusitalo,
Roosa Hytönen,
Heikki Rekola,
Jouko Lang,
Eva Schöll,
Lukas Hanschke,
Patricia Kallert,
Tobias Kipp,
Christian Strelow,
Marjukka Tuominen,
Klaus D. Jöns,
Petri Karvinen,
Tapio Niemi,
Mircea Guina,
Teemu Hakkarainen
Abstract:
On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light on demand, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the P…
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On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light on demand, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the emission rate of InAs QDs by coupling them to metal-clad GaAs nanopillars. These cavities, featuring a sub-wavelength mode volume of 4.5x10-4 (λ/n)3 and low quality factor of 62, enable Purcell-enhanced single-photon emission across a large bandwidth of 15 nm. The broadband nature of the cavity eliminates the need for implementing tuning mechanisms typically required to achieve QD-cavity resonance, thus relaxing fabrication constraints. Ultimately, this QD-cavity architecture represents a significant stride towards developing solid-state quantum emitters generating near-ideal single-photon states at GHz-level repetition rates.
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Submitted 27 April, 2025; v1 submitted 16 July, 2024;
originally announced July 2024.
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High-Q guided-mode resonance of a crossed grating with near-flat dispersion
Authors:
Reuben Amedalor,
Petri Karvinen,
Henri Pesonen,
Jari Turunen,
Tapio Niemi,
Subhajit Bej
Abstract:
Guided-mode resonances in diffraction gratings are manifested as peaks (dips) in reflection (transmission) spectra. Smaller resonance line widths (higher Q-factors) ensure stronger light-matter interactions and are beneficial for field-dependent physical processes. However, strong angular and spectral dispersion are inherent to such high-Q resonances. We demonstrate that a class of high-Q resonant…
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Guided-mode resonances in diffraction gratings are manifested as peaks (dips) in reflection (transmission) spectra. Smaller resonance line widths (higher Q-factors) ensure stronger light-matter interactions and are beneficial for field-dependent physical processes. However, strong angular and spectral dispersion are inherent to such high-Q resonances. We demonstrate that a class of high-Q resonant modes (Q-factor >1000) exhibiting extraordinarily weak dispersion can be excited in crossed gratings simultaneously with the modes with well-known nearly linear dispersion. Furthermore, we show that the polarization of the incoming light can be adjusted to engineer the dispersion of these modes, and strong to near-flat dispersion or vice-versa can be achieved by switching between two mutually orthogonal linear polarization states. We introduce a semi-analytical model to explain the underlying physics behind these observations and perform full-wave numerical simulations and experiments to support our theoretical conjecture. The results presented here will benefit all applications that rely on resonances in free-space-coupled geometries.
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Submitted 22 December, 2022;
originally announced December 2022.
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Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off
Authors:
F Cappelluti,
D Kim,
M van Eerden,
AP Cédola,
T Aho,
G Bissels,
F Elsehrawy,
J Wu,
H Liu,
P Mulder,
G Bauhuis,
J Schermer,
T Niemi,
M Guina
Abstract:
We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate twofold enhancement of the QD photocurrent in the ELO QD cell compared to the wafer-based QD cell. In the GaAs wavelength range, the ELO QD cell perfectly prese…
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We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate twofold enhancement of the QD photocurrent in the ELO QD cell compared to the wafer-based QD cell. In the GaAs wavelength range, the ELO QD cell perfectly preserves the current collection efficiency of the baseline single-junction ELO cell. We demonstrate by full-wave optical simulations that integrating a micro-patterned diffraction grating in the ELO cell rearside provides more than tenfold enhancement of the near-infrared light harvesting by QDs. Experimental results are thoroughly discussed with the help of physics-based simulations to single out the impact of QD dynamics and defects on the cell photovoltaic behavior. It is demonstrated that non radiative recombination in the QD stack is the bottleneck for the open circuit voltage ($V_{oc}$) of the reported devices. More important, our theoretical calculations demonstrate that the $V_{oc}$ offest of 0.3 V from the QD ground state identified by \emph{Tanabe et al., 2012}, from a collection of experimental data of high quality III-V QD solar cells is a reliable - albeit conservative - metric to gauge the attainable $V_{oc}$ and to quantify the scope for improvement by reducing non radiative recombination. Provided that material quality issues are solved, we demonstrate - by transport and rigorous electromagnetic simulations - that light-trapping enhanced thin-film cells with twenty InAs/GaAs QD layers reach efficiency higher than 28\% under unconcentrated light, ambient temperature. If photon recycling can be fully exploited, 30\% efficiency is deemed to be feasible.
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Submitted 25 May, 2018;
originally announced May 2018.
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Enhancement of bulk second-harmonic generation from silicon nitride films by material composition
Authors:
K. Koskinen,
R. Czaplicki,
A. Slablab,
T. Ning,
A. Hermans,
B. Kuyken,
V. Mittal,
G. S. Murugan,
T. Niemi,
R. Baets,
M. Kaurenen
Abstract:
We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying composition. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the h…
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We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying composition. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5 pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6 dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of silicon content, highlighting the controllability of the fabrication process.
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Submitted 3 October, 2017; v1 submitted 9 August, 2017;
originally announced August 2017.
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Techniques and tools for measuring energy efficiency of scientific software applications
Authors:
David Abdurachmanov,
Peter Elmer,
Giulio Eulisse,
Robert Knight,
Tapio Niemi,
Jukka K. Nurminen,
Filip Nyback,
Goncalo Pestana,
Zhonghong Ou,
Kashif Khan
Abstract:
The scale of scientific High Performance Computing (HPC) and High Throughput Computing (HTC) has increased significantly in recent years, and is becoming sensitive to total energy use and cost. Energy-efficiency has thus become an important concern in scientific fields such as High Energy Physics (HEP). There has been a growing interest in utilizing alternate architectures, such as low power ARM p…
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The scale of scientific High Performance Computing (HPC) and High Throughput Computing (HTC) has increased significantly in recent years, and is becoming sensitive to total energy use and cost. Energy-efficiency has thus become an important concern in scientific fields such as High Energy Physics (HEP). There has been a growing interest in utilizing alternate architectures, such as low power ARM processors, to replace traditional Intel x86 architectures. Nevertheless, even though such solutions have been successfully used in mobile applications with low I/O and memory demands, it is unclear if they are suitable and more energy-efficient in the scientific computing environment. Furthermore, there is a lack of tools and experience to derive and compare power consumption between the architectures for various workloads, and eventually to support software optimizations for energy efficiency. To that end, we have performed several physical and software-based measurements of workloads from HEP applications running on ARM and Intel architectures, and compare their power consumption and performance. We leverage several profiling tools (both in hardware and software) to extract different characteristics of the power use. We report the results of these measurements and the experience gained in developing a set of measurement techniques and profiling tools to accurately assess the power consumption for scientific workloads.
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Submitted 10 October, 2014;
originally announced October 2014.
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GPU in Physics Computation: Case Geant4 Navigation
Authors:
Otto Seiskari,
Jukka Kommeri,
Tapio Niemi
Abstract:
General purpose computing on graphic processing units (GPU) is a potential method of speeding up scientific computation with low cost and high energy efficiency. We experimented with the particle physics simulation toolkit Geant4 used at CERN to benchmark its geometry navigation functionality on a GPU. The goal was to find out whether Geant4 physics simulations could benefit from GPU acceleration…
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General purpose computing on graphic processing units (GPU) is a potential method of speeding up scientific computation with low cost and high energy efficiency. We experimented with the particle physics simulation toolkit Geant4 used at CERN to benchmark its geometry navigation functionality on a GPU. The goal was to find out whether Geant4 physics simulations could benefit from GPU acceleration and how difficult it is to modify Geant4 code to run in a GPU.
We ported selected parts of Geant4 code to C99 & CUDA and implemented a simple gamma physics simulation utilizing this code to measure efficiency. The performance of the program was tested by running it on two different platforms: NVIDIA GeForce 470 GTX GPU and a 12-core AMD CPU system. Our conclusion was that GPUs can be a competitive alternate for multi-core computers but porting existing software in an efficient way is challenging.
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Submitted 24 September, 2012;
originally announced September 2012.
